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219 条记录 (耗时 0.036 秒)

    Via gouged interconnect structure and method of fabricating same
    22.
    发明授权
    Via gouged interconnect structure and method of fabricating same 有权
    通过沟槽互连结构及其制造方法

    公开(公告)号：US07964966B2

    公开(公告)日：2011-06-21

    申请号：US12494564

    申请日：2009-06-30

    申请人： Chih-Chao Yang ,  Daniel C. Edelstein ,  Theodorus E. Standaert

    发明人： Chih-Chao Yang ,  Daniel C. Edelstein ,  Theodorus E. Standaert

    IPC分类号： H01L23/48 ,  H01L21/4763 ,  H01L21/44

    CPC分类号： H01L21/76808 ,  H01L21/76805 ,  H01L21/76844 ,  H01L21/76846 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An interconnect structure including a gouging feature at the bottom of a via opening and a method of forming the same are provided. The method of the present invention does not disrupt the coverage of the deposited trench diffusion barrier in a line opening that is located atop the via opening, and/or does not introduce damages caused by creating a gouging feature at the bottom of the via opening by sputtering into the interconnect dielectric material that includes the via and line openings. Such an interconnect structure is achieved by providing a gouging feature in the bottom of the via opening by first forming the line opening within the interconnect dielectric, followed by forming the via opening and then the gouging feature.

    摘要翻译： 提供一种包括通孔开口底部的气刨结构的互连结构及其形成方法。 本发明的方法不会破坏位于通孔开口顶部的线路开口中的沉积的沟槽扩散阻挡层的覆盖和/或不引起由于在通孔开口的底部产生气流特征而造成的损害 溅射到包括通孔和线路开口的互连电介质材料中。 通过首先在互连电介质中形成线路开口，然后形成通孔开口，然后形成沟槽特征，在通孔开口的底部提供气泡特征来实现这种互连结构。

    Large grain size conductive structure for narrow interconnect openings
    23.
    发明授权
    Large grain size conductive structure for narrow interconnect openings 有权
    用于窄互连开口的大粒度导电结构

    公开(公告)号：US07956463B2

    公开(公告)日：2011-06-07

    申请号：US12560878

    申请日：2009-09-16

    申请人： Chih-Chao Yang ,  Daniel C. Edelstein ,  Takeshi Nogami ,  Stephen M. Rossnagel

    发明人： Chih-Chao Yang ,  Daniel C. Edelstein ,  Takeshi Nogami ,  Stephen M. Rossnagel

    IPC分类号： H01L23/48

    CPC分类号： H01L21/76871 ,  H01L21/76846 ,  H01L21/76868 ,  H01L21/76883

    摘要： An interconnect structure having reduced electrical resistance and a method of forming such an interconnect structure are provided. The interconnect structure includes a dielectric material including at least one opening therein. The at least one opening is filled with an optional barrier diffusion layer, a grain growth promotion layer, an agglomerated plating seed layer, an optional second plating seed layer a conductive structure. The conductive structure which includes a metal-containing conductive material, typically Cu, has a bamboo microstructure and an average grain size of larger than 0.05 microns. In some embodiments, the conductive structure includes conductive grains that have a (111) crystal orientation.

    摘要翻译： 提供具有降低的电阻的互连结构和形成这种互连结构的方法。 互连结构包括其中包括至少一个开口的电介质材料。 至少一个开口填充有可选的阻挡扩散层，晶粒生长促进层，聚集的电镀种子层，任选的第二电镀种子层，导电结构。 包含含金属的导电材料（通常为Cu）的导电结构具有竹结构，平均晶粒尺寸大于0.05微米。 在一些实施例中，导电结构包括具有（111）晶体取向的导电晶粒。

    LARGE GRAIN SIZE CONDUCTIVE STRUCTURE FOR NARROW INTERCONNECT OPENINGS
    24.
    发明申请
    LARGE GRAIN SIZE CONDUCTIVE STRUCTURE FOR NARROW INTERCONNECT OPENINGS 有权
    用于窄幅互连开口的大粒度导电结构

    公开(公告)号：US20110062587A1

    公开(公告)日：2011-03-17

    申请号：US12560878

    申请日：2009-09-16

    申请人： Chih-Chao Yang ,  Daniel C. Edelstein ,  Takeshi Nogami ,  Stephen M. Rossnagel

    发明人： Chih-Chao Yang ,  Daniel C. Edelstein ,  Takeshi Nogami ,  Stephen M. Rossnagel

    IPC分类号： H01L23/522 ,  H01L21/768

    CPC分类号： H01L21/76871 ,  H01L21/76846 ,  H01L21/76868 ,  H01L21/76883

    摘要： An interconnect structure having reduced electrical resistance and a method of forming such an interconnect structure are provided. The interconnect structure includes a dielectric material including at least one opening therein. The at least one opening is filled with an optional barrier diffusion layer, a grain growth promotion layer, an agglomerated plating seed layer, an optional second plating seed layer a conductive structure. The conductive structure which includes a metal-containing conductive material, typically Cu, has a bamboo microstructure and an average grain size of larger than 0.05 microns. In some embodiments, the conductive structure includes conductive grains that have a (111) crystal orientation.

    摘要翻译： 提供具有降低的电阻的互连结构和形成这种互连结构的方法。 互连结构包括其中包括至少一个开口的电介质材料。 至少一个开口填充有可选的阻挡扩散层，晶粒生长促进层，聚集的电镀种子层，任选的第二电镀种子层，导电结构。 包含含金属的导电材料（通常为Cu）的导电结构具有竹结构，平均晶粒尺寸大于0.05微米。 在一些实施例中，导电结构包括具有（111）晶体取向的导电晶粒。

    STRUCTURE FOR METAL CAP APPLICATIONS
    25.
    发明申请
    STRUCTURE FOR METAL CAP APPLICATIONS 有权
    金属盖应用结构

    公开(公告)号：US20110003473A1

    公开(公告)日：2011-01-06

    申请号：US12881806

    申请日：2010-09-14

    申请人： Chih-Chao Yang ,  Daniel C. Edelstein ,  Keith Kwong Hon Wong ,  Haining Yang

    发明人： Chih-Chao Yang ,  Daniel C. Edelstein ,  Keith Kwong Hon Wong ,  Haining Yang

    IPC分类号： H01L21/768

    CPC分类号： H01L21/76885 ,  H01L21/76826 ,  H01L21/76834 ,  H01L21/7684 ,  H01L21/76849

    摘要： An interconnect structure is provided in which the conductive features embedded within a dielectric material are capped with a metallic capping layer, yet no metallic residue is present on the surface of the dielectric material in the final structure. The inventive interconnect structure has improved dielectric breakdown strength as compared to prior art interconnect structures. Moreover, the inventive interconnect structure has better reliability and technology extendibility for the semiconductor industry. The inventive interconnect structure includes a dielectric material having at least one metallic capped conductive feature embedded therein, wherein a top portion of said at least one metallic capped conductive feature extends above an upper surface of the dielectric material. A dielectric capping layer is located on the dielectric material and it encapsulates the top portion of said at least one metallic capped conductive feature that extends above the upper surface of dielectric material.

    摘要翻译： 提供了一种互连结构，其中嵌入电介质材料内的导电特征被金属覆盖层封盖，但在最终结构中绝缘材料表面上没有金属残留物。 与现有技术的互连结构相比，本发明的互连结构具有改善的介电击穿强度。 此外，本发明的互连结构对于半导体工业具有更好的可靠性和技术可扩展性。 本发明的互连结构包括具有嵌入其中的至少一个金属封盖的导电特征的电介质材料，其中所述至少一个金属封端的导电特征的顶部在电介质材料的上表面上方延伸。 电介质覆盖层位于电介质材料上，并且封装在电介质材料的上表面上方延伸的所述至少一个金属封盖导电特征的顶部。

    VIA GOUGED INTERCONNECT STRUCTURE AND METHOD OF FABRICATING SAME
    26.
    发明申请
    VIA GOUGED INTERCONNECT STRUCTURE AND METHOD OF FABRICATING SAME 有权
    通过GOGGED INTERCONNECT结构及其制作方法

    公开(公告)号：US20100327446A1

    公开(公告)日：2010-12-30

    申请号：US12494564

    申请日：2009-06-30

    申请人： Chih-Chao Yang ,  Daniel C. Edelstein ,  Theodorus E. Standaert

    发明人： Chih-Chao Yang ,  Daniel C. Edelstein ,  Theodorus E. Standaert

    IPC分类号： H01L23/522 ,  H01L21/768

    CPC分类号： H01L21/76808 ,  H01L21/76805 ,  H01L21/76844 ,  H01L21/76846 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An interconnect structure including a gouging feature at the bottom of a via opening and a method of forming the same are provided. The method of the present invention does not disrupt the coverage of the deposited trench diffusion barrier in a line opening that is located atop the via opening, and/or does not introduce damages caused by creating a gouging feature at the bottom of the via opening by sputtering into the interconnect dielectric material that includes the via and line openings. Such an interconnect structure is achieved by providing a gouging feature in the bottom of the via opening by first forming the line opening within the interconnect dielectric, followed by forming the via opening and then the gouging feature.

    摘要翻译： 提供一种包括通孔开口底部的气刨结构的互连结构及其形成方法。 本发明的方法不会破坏位于通孔开口顶部的线路开口中沉积的沟槽扩散阻挡层的覆盖和/或不引起由通孔开口底部产生气流特征而导致的损伤 溅射到包括通孔和线路开口的互连电介质材料中。 通过首先在互连电介质中形成线路开口，然后形成通孔开口，然后形成沟槽特征，在通孔开口的底部提供气泡特征来实现这种互连结构。