公开(公告)号：US09941425B2

公开(公告)日：2018-04-10

申请号：US14885721

申请日：2015-10-16

Applicant: ASM IP HOLDING B.V.

Inventor： Tom E. Blomberg ,  Hannu Huotari

IPC: H01L31/0232 ,  H01L31/18 ,  H01L33/00 ,  H01L33/58 ,  C23C16/22 ,  H01L31/032 ,  H01L31/062 ,  H01L31/072

CPC classification number: H01L31/02322 ,  C23C14/06 ,  C23C14/0694 ,  C23C16/22 ,  C23C16/30 ,  C23C16/45525 ,  H01L31/032 ,  H01L31/062 ,  H01L31/072 ,  H01L31/18 ,  H01L33/005 ,  H01L33/58 ,  H01L2933/0016 ,  H01L2933/0025 ,  Y02E10/50

Abstract: Deposition processes are disclosed herein for depositing thin films comprising a dielectric transition metal compound phase and a conductive or semiconducting transition metal compound phase on a substrate in a reaction space. Deposition processes can include a plurality of super-cycles. Each super-cycle may include a dielectric transition metal compound sub-cycle and a reducing sub-cycle. The dielectric transition metal compound sub-cycle may include contacting the substrate with a dielectric transition metal compound. The reducing sub-cycle may include alternately and sequentially contacting the substrate with a reducing agent and a nitrogen reactant. The thin film may comprise a dielectric transition metal compound phase embedded in a conductive or semiconducting transition metal compound phase.

公开(公告)号：US08946830B2

公开(公告)日：2015-02-03

申请号：US13439528

申请日：2012-04-04

Applicant: Sung-Hoon Jung

Inventor： Sung-Hoon Jung

IPC: H01L21/316 ,  H01L29/78

CPC classification number: H01L21/28229 ,  C23C16/405 ,  C23C16/409 ,  C23C16/45527 ,  H01L21/02186 ,  H01L21/02197 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/02362 ,  H01L21/28194 ,  H01L29/513 ,  H01L29/517

Abstract: Embodiments related to metal oxide protective layers formed on a surface of a halogen-sensitive metal-including layer present on a substrate processed in a semiconductor processing reactor are provided. In one example, a method for forming a metal oxide protective layer is provided. The example method includes forming a metal-including active species on the halogen-sensitive metal-including layer, the metal-including active species being derived from a non-halogenated metal oxide precursor. The example method also includes reacting an oxygen-containing reactant with the metal-including active species to form the metal oxide protective layer.

Abstract translation: 提供与在半导体处理反应器中处理的基板上存在的含卤敏感性金属包覆层的表面上形成的金属氧化物保护层有关的实施方式。 在一个实例中，提供了形成金属氧化物保护层的方法。 示例性方法包括在含卤素敏感的含金属层上形成含金属的活性物质，所述含金属的活性物质衍生自非卤化金属氧化物前体。 该示例性方法还包括使含氧反应物与含金属的活性物质反应以形成金属氧化物保护层。

公开(公告)号：US20130292807A1

公开(公告)日：2013-11-07

申请号：US13465340

申请日：2012-05-07

Applicant: Petri Raisanen ,  Michael Givens ,  Mohith Verghese

Inventor： Petri Raisanen ,  Michael Givens ,  Mohith Verghese

IPC: H01L29/51 ,  H01L21/66 ,  H01L21/316

CPC classification number: H01L21/02233 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02172 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/02197 ,  H01L21/022 ,  H01L21/0223 ,  H01L21/02236 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02249 ,  H01L21/02252 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02315 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L22/12 ,  H01L22/20 ,  H01L29/511 ,  H01L29/512 ,  H01L29/513 ,  H01L29/517

Abstract: Embodiments related to methods for forming a film stack on a substrate are provided. One example method comprises exposing the substrate to an activated oxygen species and converting an exposed surface of the substrate into a continuous monolayer of a first dielectric material. The example method also includes forming a second dielectric material on the continuous monolayer of the first dielectric material without exposing the substrate to an air break.

Abstract translation: 提供了与在衬底上形成膜堆叠的方法相关的实施例。 一个示例性方法包括将基底暴露于活化氧物质并将基底的暴露表面转化为第一介电材料的连续单层。 该示例性方法还包括在第一介电材料的连续单层上形成第二介电材料，而不将基板暴露于空气断裂。

公开(公告)号：USD903477S1

公开(公告)日：2020-12-01

申请号：US29634768

申请日：2018-01-24

Applicant: ASM IP Holding B.V.

Designer： Ankit Atul Goratela ,  Christopher Daniel Wuester

公开(公告)号：US10770286B2

公开(公告)日：2020-09-08

申请号：US15589849

申请日：2017-05-08

Applicant: ASM IP Holding B.V.

Inventor： Jacob Huffman Woodruff ,  Bed Sharma

IPC: H01L21/02 ,  H01L21/768 ,  C23C16/34 ,  C23C16/455 ,  C23C16/56 ,  C23C16/04

Abstract: A method for selectively forming a silicon nitride film on a substrate comprising a first metallic surface and a second dielectric surface by a cyclical deposition process is disclosed. The method may comprise contacting the substrate with a first reactant comprising a silicon halide source and contacting the substrate with a second reactant comprising a nitrogen source, wherein the incubation period for the first metallic surface is less than the incubation period for the second dielectric surface. Semiconductor device structures comprising a selective silicon nitride film are also disclosed.

公开(公告)号：US10566223B2

公开(公告)日：2020-02-18

申请号：US15598169

申请日：2017-05-17

Applicant: ASM IP Holding B.V.

Inventor： Keith R. Lawson ,  Michael E. Givens

IPC: G06F19/00 ,  H01L21/67 ,  G05B19/418

Abstract: Embodiments of the present disclosure can help increase throughput and reduce resource conflicts and delays in semiconductor processing tools. An exemplary method according to various aspects of the present disclosure includes analyzing, by a computer program operating on a computer system, a plurality of expected times to complete each of a respective plurality of actions to be performed by a semiconductor processing tool, the semiconductor processing too including a first process module and a second process module.

公开(公告)号：US20170040204A1

公开(公告)日：2017-02-09

申请号：US15211538

申请日：2016-07-15

Applicant: ASM IP Holding B.V.

Inventor： Soo Hyun KIM ,  Dae Youn KIM ,  Izumi ARAI

IPC: H01L21/687 ,  H01L21/67

CPC classification number: H01L21/67201 ,  H01L21/67167 ,  H01L21/67184 ,  H01L21/67742 ,  H01L21/67754 ,  H01L21/68742

Abstract: Provided is a substrate processing apparatus including a load-lock chamber; a transfer chamber connected to the load-lock chamber; and one or more processing chambers connected to the transfer chamber. The transfer chamber includes a transfer arm that transfers a substrate between the load-lock chamber and the one or more processing chambers, the load-lock chamber includes a plurality of load-lock stations for accommodating a plurality of substrates as a matrix of m×n. According to the substrate processing apparatus, a time taken to transfer substrates may be reduced greatly, and productivity may be improved.

Abstract translation: 提供了一种基板处理装置，其包括装载锁定室; 连接到所述装载锁定室的传送室; 以及连接到传送室的一个或多个处理室。 传送室包括传送臂，其在负载锁定室和一个或多个处理室之间传送衬底，负载锁定室包括多个负载锁定站，用于容纳多个衬底作为矩阵m× n。 根据基板处理装置，可以大大降低转印基板所花费的时间，可以提高生产率。

公开(公告)号：US08742668B2

公开(公告)日：2014-06-03

申请号：US13604498

申请日：2012-09-05

Applicant: Ryu Nakano ,  Tsutomu Makino ,  Hisashi Takamizawa

Inventor： Ryu Nakano ,  Tsutomu Makino ,  Hisashi Takamizawa

IPC: H05H1/46

CPC classification number: H01J37/32091 ,  H01J37/32137

Abstract: A method for stabilizing plasma ignition in a continuous process conducted on a substrate, includes: applying a spike of RF power between an upper electrode and a lower electrode on which the substrate is placed, wherein the spike starts from zero power, jumps to a spike power, and then drops to a base power which is so low as to cause plasma ignition failure; and continuously applying RF power at the base power between the upper and lower electrode for a duration substantially longer than a duration of the spike to process the substrate. The spike is such that ignition failure is reduced.

Abstract translation: 一种用于在衬底上进行的连续工艺中稳定等离子体点火的方法包括：在上电极和放置衬底的下电极之间施加RF功率尖峰，其中尖峰从零功率开始，跳到尖峰 功率，然后下降到基本功率如此低以致引起等离子体点火故障; 并在上下电极之间连续地施加基本功率的RF功率，持续时间大大长于尖峰的持续时间以处理衬底。 尖峰使得点火失效降低。

公开(公告)号：US08728832B2

公开(公告)日：2014-05-20

申请号：US13465340

申请日：2012-05-07

Applicant: Petri Raisanen ,  Michael Givens ,  Mohith Verghese

Inventor： Petri Raisanen ,  Michael Givens ,  Mohith Verghese

IPC: H01L29/51 ,  H01L21/314 ,  H01L21/66

CPC classification number: H01L21/02233 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02172 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/02197 ,  H01L21/022 ,  H01L21/0223 ,  H01L21/02236 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02249 ,  H01L21/02252 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02315 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L22/12 ,  H01L22/20 ,  H01L29/511 ,  H01L29/512 ,  H01L29/513 ,  H01L29/517

Abstract: Embodiments related to methods for forming a film stack on a substrate are provided. One example method comprises exposing the substrate to an activated oxygen species and converting an exposed surface of the substrate into a continuous monolayer of a first dielectric material. The example method also includes forming a second dielectric material on the continuous monolayer of the first dielectric material without exposing the substrate to an air break.

Abstract translation: 提供了与在衬底上形成膜堆叠的方法相关的实施例。 一个示例性方法包括将基底暴露于活化氧物质并将基底的暴露表面转化为第一介电材料的连续单层。 该示例性方法还包括在第一介电材料的连续单层上形成第二介电材料，而不将基板暴露于空气断裂。

公开(公告)号：US10734219B2

公开(公告)日：2020-08-04

申请号：US16142793

申请日：2018-09-26

Applicant: ASM IP Holding B.V.

Inventor： Fumitaka Shoji

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/455 ,  C23C16/40

Abstract: Examples of a plasma film forming method include repeating feeding material gas onto a substrate placed on a susceptor via a shower head provided to oppose the susceptor, performing plasma film formation on the substrate by applying high frequency power to the shower head while providing reactant gas onto the substrate, and performing post-purge of discharging the gas used in the plasma film formation while heating the shower head, for a time longer than 0.1 seconds, a plurality of times in this order.