Abstract:
There is here disclosed charged particle beam apparatus in which reactant floating in vacuum can efficiently be removed by simple structure. The charged particle beam apparatus of the present invention comprises a pulse tube refrigerator, a refrigerator controller for controlling the refrigerator, a compressor, a high-pressure rotary valve, a low-pressure rotary valve, and an active damper for removing vibration generated in the refrigerator. Since a cold section is disposed between an objective lens and a specimen in a vacuum container, and adsorbs the reactant in the vacuum container, the amount of reactant in the vacuum container can be reduced, the errors of the critical dimension value of a critical dimension SEM are reduced, and measurement precision is improved. Moreover, since a pulse tube is used as the refrigerator for cooling the cold section, the structure of the apparatus can be simplified and miniaturized. Accordingly, the vibration can be suppressed, and the measurement precision can be enhanced, maintenance can be facilitated, and a running cost can be reduced.
Abstract:
A shield assembly for reducing electron fogging effects in electron beam lithography. This shield, located between an electron beam column final aperture and the beam target, is of multiple vanes with sharp edges pointing towards the electron beam incident point on the target; the vanes are conically shaped and concentric around the electron beam path, which travels through the center of the assembly. Additionally, the sharp edges are such that they present oblique surfaces at the ends of the vanes angled between 10° and 20° relative to the outer vane surface and these oblique surfaces face towards the electron beam path. Furthermore, the shield assembly may also have the vanes angled towards the beam incident point such that the vertex of the conical vane assembly is coincident with the beam incident point.
Abstract:
Disclosed herein is a charged particle beam apparatus (10) includes: a sample chamber (11); a sample stage (31); an electron beam column (13) irradiating a sample S with an electron beam; and a focused ion beam column (14) irradiating the sample S with a focused ion beam. The apparatus (10) includes a displacement member (45) having: an open/close portion provided to be displaceable between an insertion position between a beam emitting end portion of the electron beam column (13) and the sample stage (31), and a withdrawal position away from the insertion position; and a contact portion provided at a contact position capable of contacting the sample S before the beam emitting end portion during operation of the sample stage (31). The apparatus (10) includes: a driving unit 42 displacing the displacement member (45); and a conduction sensor (24) detecting whether the sample is in contact with the contact portion.
Abstract:
Substrate processing systems, such as ion implantation systems, deposition systems and etch systems, having textured silicon liners are disclosed. The silicon liners are textured using a chemical treatment that produces small features, referred to as micropyramids, which may be less than 20 micrometers in height. Despite the fact that these micropyramids are much smaller than the textured features commonly found in graphite liners, the textured silicon is able to hold deposited coatings and resist flaking. Methods for performing preventative maintenance on these substrate processing systems are also disclosed.
Abstract:
A chicane blanker assembly for a charged particle beam system includes an entrance and an exit, at least one neutrals blocking structure, a plurality of chicane deflectors, a beam blanking deflector, and a beam blocking structure. The entrance is configured to accept a beam of charged particles propagating along an axis. The at least one neutrals blocking structure intersects the axis. The plurality of chicane deflectors includes a first chicane deflector, a second chicane deflector, a third chicane deflector, and a fourth chicane deflector sequentially arranged in series between the entrance and the exit and configured to deflect the beam along a path that bypasses the neutrals blocking structure and exits the chicane blanker assembly through the exit. In embodiments, the chicane blanker assembly includes a two neutrals blocking structures. In embodiments, the beam blocking structure is arranged between the third chicane deflector and the fourth chicane deflector.
Abstract:
Disclosed herein a light source apparatus that is capable of suppressing a light transmission rate of a debris trap to be lowered and a reflection rate in a light condenser mirror to be lowered. In the light source apparatus, a shielding member is provided having an aperture is provided in front of a stationary type foil trap to limit a solid angle of light emitted from a high temperature plasma. Furthermore, the stationary type foil trap is provided with a driving mechanism to allow the foil trap to be revolved such that an adhesion part of the debris of the foil trap is deviated from a position of the foil trap facing the aperture.
Abstract:
Provided herein are approaches for controlling particle trajectory from a beam-line electrostatic element. In an exemplary approach, a beam-line electrostatic element is disposed along a beam-line of an electrostatic filter (EF), and a voltage is supplied to the beam-line electrostatic element to generate an electrostatic field surrounding the beam-line electrostatic element, agitating a layer of contamination particles formed on the beam-line electrostatic element. A trajectory of a set of particles from the layer of contamination particles is then modified to direct the set of particles to a desired location within the EF. In one approach, the trajectory is controlled by providing an additional electrode adjacent the beam-line electrostatic element, and supplying a voltage to the additional electrode to control a local electrostatic field in proximity to the beam-line electrostatic element. In another approach, the trajectory is influenced by one or more geometric features of the beam-line electrostatic element.
Abstract:
A chicane blanker assembly for a charged particle beam system includes an entrance and an exit, at least one neutrals blocking structure, a plurality of chicane deflectors, a beam blanking deflector, and a beam blocking structure. The entrance is configured to accept a beam of charged particles propagating along an axis. The at least one neutrals blocking structure intersects the axis. The plurality of chicane deflectors includes a first chicane deflector, a second chicane deflector, a third chicane deflector, and a fourth chicane deflector sequentially arranged in series between the entrance and the exit and configured to deflect the beam along a path that bypasses the neutrals blocking structure and exits the chicane blanker assembly through the exit. In embodiments, the chicane blanker assembly includes a two neutrals blocking structures. In embodiments, the beam blocking structure is arranged between the third chicane deflector and the fourth chicane deflector.
Abstract:
One embodiment relates to an electron beam apparatus. The apparatus includes a source for generating an incident electron beam, an electron lens for focusing the incident electron beam so that the beam impinges upon a substrate surface and interacts with surface material so as to cause secondary emission of scattered electrons, and a detector configured to detect the scattered electrons. The apparatus further includes an advantageous device configured to trap the scattered electrons which are emitted at sharp angles relative to the sample surface plane of the substrate surface. Other embodiments are also disclosed.
Abstract:
This disclosure provides systems, methods, and apparatus related to blocking macroparticles in deposition processes utilizing plasmas. In one aspect, an apparatus includes a cathode, a substrate holder, a first magnet, a second magnet, and a structure. The cathode is configured to generate a plasma. The substrate holder is configured to hold a substrate. The first magnet is disposed proximate a first side of the cathode. The second magnet is disposed proximate a second side of the substrate holder. A magnetic field exists between the first magnet and the second magnet and a flow of the plasma substantially follows the magnetic field. The structure is disposed between the second side of the cathode and the first side of the substrate holder and is positioned proximate a region where the magnetic field between the first magnet and the second magnet is weak.