公开(公告)号：US11646715B2

公开(公告)日：2023-05-09

申请号：US17016677

申请日：2020-09-10

Applicant: SHENZHEN SUNWAY COMMUNICATION CO., LTD.

Inventor： Chengcheng Yu ,  Yanjie Cao ,  Wei Wang

IPC: H03H9/54 ,  H03H9/02 ,  H03H9/05 ,  H03H9/13 ,  H03H9/17 ,  H03H9/56 ,  H03H9/70 ,  H03H9/145 ,  H03H9/25 ,  H03H9/64 ,  H03H9/72 ,  H03F3/24 ,  H04B1/38 ,  H04L25/03

CPC classification number: H03H9/542 ,  H03F3/245 ,  H03H9/02031 ,  H03H9/02102 ,  H03H9/02118 ,  H03H9/02543 ,  H03H9/02559 ,  H03H9/02834 ,  H03H9/02866 ,  H03H9/058 ,  H03H9/059 ,  H03H9/0514 ,  H03H9/0533 ,  H03H9/132 ,  H03H9/145 ,  H03H9/173 ,  H03H9/175 ,  H03H9/176 ,  H03H9/25 ,  H03H9/562 ,  H03H9/564 ,  H03H9/6489 ,  H03H9/703 ,  H03H9/72 ,  H04B1/38 ,  H04L25/03 ,  H03F2200/294 ,  H03F2200/451

Abstract: The invention provides a filter device, an RF front-end device and a wireless communication device. The filter device comprises a substrate, at least one resonance device, a passive device and a connector, wherein the at least one resonance device has a first side and a second side opposite to the first side, the substrate is located on the first side, and the passive device is located on the second side. The at least one resonance device is connected to the passive device through the connector. The RF filter device formed by integrating the resonance device (such as an SAW resonance device or a BAW resonance device) and the passive device (such as an IPD) in one die can broaden the passband width, has a high out-of-band rejection, and occupies less space in an RF front-end chip.

公开(公告)号：US11646714B2

公开(公告)日：2023-05-09

申请号：US16505669

申请日：2019-07-08

Applicant: Texas Instruments Incorporated

Inventor： Jeronimo Segovia Fernandez ,  Peter Smeys ,  Ting-Ta Yen

IPC: H03H9/17 ,  H03H9/64 ,  H03H9/02 ,  H03H9/15 ,  H03H9/05

CPC classification number: H03H9/175 ,  H03H9/02275 ,  H03H9/0542 ,  H03H9/64 ,  H03H2009/02299 ,  H03H2009/155

Abstract: A laterally vibrating bulk acoustic wave (LVBAW) resonator includes a piezoelectric plate sandwiched between first and second metal layers. The second metal layer is patterned into an interdigital transducer (IDT) with comb-shaped electrodes having interlocking fingers. The width and pitch of the fingers of the electrodes determine the resonant frequency. A combined thickness of the first and second metal layers and the piezoelectric layer is less than the pitch of the interlocking fingers.

公开(公告)号：US20190245510A1

公开(公告)日：2019-08-08

申请号：US16240836

申请日：2019-01-07

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Masakazu MIMURA

IPC: H03H9/17 ,  H03H9/02 ,  H03H9/145 ,  H03H3/08 ,  H01L41/312 ,  H01L41/29

CPC classification number: H03H9/175 ,  H01L41/29 ,  H01L41/312 ,  H03H3/08 ,  H03H9/02559 ,  H03H9/02929 ,  H03H9/058 ,  H03H9/14538

Abstract: An elastic wave device using the S0 mode of plate waves includes a support substrate, an acoustic reflective layer laminated on the support substrate, a piezoelectric body laminated on the acoustic reflective layer, and an IDT electrode disposed on the piezoelectric body. In the acoustic reflective layer, T1+T2 is between about 0.40 and about 0.60 inclusive in a portion in which low and high acoustic impedance layers are adjacent in the laminating direction. T1 is the thickness of the low acoustic impedance layers. T2 is the thickness of the high acoustic impedance layers. T1/(T1+T2) is between about 0.35 and about 0.65 inclusive.

公开(公告)号：US20190234907A1

公开(公告)日：2019-08-01

申请号：US16319410

申请日：2017-07-26

Applicant: QORVO US, INC.

Inventor： Thayne L. Edwards ,  Florian Bell ,  Matthew Ryder ,  Bruce Murdock

IPC: G01N29/02 ,  G01N29/22 ,  G01N29/24 ,  G01N29/32 ,  G01N29/036 ,  B01L3/00

CPC classification number: G01N29/022 ,  B01L3/502715 ,  B01L3/50273 ,  B01L3/502738 ,  B01L2300/0636 ,  B01L2300/0816 ,  B01L2300/0867 ,  B01L2300/165 ,  B01L2400/0688 ,  B01L2400/088 ,  G01N29/02 ,  G01N29/036 ,  G01N29/22 ,  G01N29/222 ,  G01N29/2437 ,  G01N29/32 ,  G01N2291/014 ,  G01N2291/022 ,  G01N2291/0255 ,  G01N2291/0256 ,  G01N2291/0426 ,  G01N2291/106 ,  H03H9/175

Abstract: A cartridge for sample handling and sensing includes a sample port connected to a sample reservoir having a proximal end, a proximal region adjacent the proximal end, and a distal end opposite of the proximal end. The cartridge also includes a first fluid port connected to the sample reservoir in the distal region via a first fluid channel; and a second fluid port connected to the sample reservoir in the proximal region via a second fluid channel. In addition, the cartridge includes a sensor platform comprising a bulk acoustic wave (BAW) resonator and a fluid flow path comprising a sensing region extending across a sensing surface of the BAW resonator. The cartridge further includes a fluid valve between the distal end of the sample reservoir and the sensing region. A sample may be applied to the sample port; first volume of fluid may be injected through the first fluid port; and then a second volume of fluid may be injected through the second fluid port to drive the sample into the sensing region of the fluid flow path.

公开(公告)号：US20190058451A1

公开(公告)日：2019-02-21

申请号：US16039952

申请日：2018-07-19

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung LEE ,  Ran Hee SHIN ,  Je Hong KYOUNG ,  Hwa Sun LEE ,  Jin Suk SON ,  Sung Sun KIM

IPC: H03H9/02

CPC classification number: H03H9/131 ,  H03H9/02015 ,  H03H9/173 ,  H03H9/175

Abstract: A bulk acoustic wave resonator includes: a substrate; a lower electrode disposed on the substrate; a piezoelectric layer at least partially disposed on the lower electrode; and an upper electrode disposed on the piezoelectric layer, wherein either one or both of the lower electrode and the upper electrode includes a layer of aluminum alloy including scandium (Sc).

公开(公告)号：US20190007021A1

公开(公告)日：2019-01-03

申请号：US16008845

申请日：2018-06-14

Applicant: TAIYO YUDEN CO., LTD.

Inventor： Shinji TANIGUCHI ,  Hiroomi KANEKO ,  Hiroshi KAWAKAMI ,  Tokihiro NISHIHARA

IPC: H03H9/02 ,  H03H3/02 ,  H03H9/13 ,  H03H9/17 ,  H03H9/56 ,  H03H9/70

CPC classification number: H03H9/02102 ,  H03H3/02 ,  H03H9/02015 ,  H03H9/02031 ,  H03H9/02118 ,  H03H9/131 ,  H03H9/173 ,  H03H9/175 ,  H03H9/178 ,  H03H9/562 ,  H03H9/564 ,  H03H9/568 ,  H03H9/706 ,  H03H2003/021 ,  H03H2003/025

Abstract: A piezoelectric thin film resonator includes: a substrate; lower and upper electrodes located on the substrate; a piezoelectric film that has a lower piezoelectric film mainly composed of aluminum nitride and an upper piezoelectric film mainly composed of aluminum nitride, the lower piezoelectric film and the upper piezoelectric film being in contact with each other in at least a part of a resonance region where the lower electrode and the upper electrode face each other across at least a part of the piezoelectric film, and a fluorine concentration at a boundary face with which the lower piezoelectric film and the upper piezoelectric film are in contact being 0.03 atomic % or less; and an insulating film that is located between the lower piezoelectric film and the upper piezoelectric film in a region other than the at least a part of the resonance region and contains silicon oxide.

公开(公告)号：US20180309425A1

公开(公告)日：2018-10-25

申请号：US16020635

申请日：2018-06-27

Applicant: Akoustis, Inc.

Inventor： Jeffrey B. SHEALY ,  Rohan W. HOULDEN ,  Shawn R. GIBB ,  Mary WINTERS ,  Ramakrishna VETURY

IPC: H03H9/02 ,  H03H9/54

CPC classification number: H03H3/02 ,  H03H9/02015 ,  H03H9/02118 ,  H03H9/0523 ,  H03H9/105 ,  H03H9/173 ,  H03H9/175 ,  H03H9/54 ,  H03H2003/021 ,  H03H2003/025

Abstract: An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

公开(公告)号：US20180159503A1

公开(公告)日：2018-06-07

申请号：US15828637

申请日：2017-12-01

Applicant: SKYWORKS SOLUTIONS, INC.

Inventor： Atsushi Takano

IPC: H03H9/10 ,  H03H3/02 ,  H03H9/17 ,  H03H9/05 ,  H01L41/313 ,  H01L41/337 ,  H01L41/338 ,  H01L23/00

CPC classification number: H03H9/1035 ,  B23K1/0016 ,  B23K20/16 ,  B23K26/382 ,  B23K26/402 ,  B23K2101/36 ,  B23K2101/42 ,  B23K2103/172 ,  H01L21/187 ,  H01L24/83 ,  H01L24/94 ,  H01L25/0657 ,  H01L41/313 ,  H01L41/337 ,  H01L41/338 ,  H01L2224/83096 ,  H01L2224/8312 ,  H01L2224/83825 ,  H01L2924/01029 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01079 ,  H03H3/02 ,  H03H9/0523 ,  H03H9/17 ,  H03H9/171 ,  H03H9/173 ,  H03H9/175 ,  H03H9/706 ,  H03H2003/021

Abstract: An electronic device, such as a filter, includes a first substrate having a bottom surface and a top surface, a first side wall of a certain height being formed along a periphery of the bottom surface to surround an electronic circuit disposed on the bottom surface, an external electrode formed on the top surface, the external electrode being connected to the electronic circuit by a via communicating with the bottom surface and a second substrate. The second substrate has a second side wall of a certain height formed along a periphery of a top surface, the second side wall being aligned and bonded with the first side wall to internally form a cavity defined between the bottom surface of the first substrate, the top surface of the second substrate, the first side wall, and the second side wall.

公开(公告)号：US09991871B2

公开(公告)日：2018-06-05

申请号：US14526466

申请日：2014-10-28

Applicant: Avago Technologies General IP (Singapore) Pte. Ltd.

Inventor： Qiang Zou ,  Dariusz Burak

IPC: H03H9/13 ,  H03H9/15 ,  H01L41/047 ,  H01L41/053 ,  H03H3/04 ,  H03H9/17 ,  H03H9/02

CPC classification number: H01L41/047 ,  H01L41/0533 ,  H03H3/04 ,  H03H9/02118 ,  H03H9/132 ,  H03H9/15 ,  H03H9/173 ,  H03H9/175

Abstract: An acoustic resonator includes a first electrode disposed over a substrate; a piezoelectric layer disposed over the first electrode; and a second electrode disposed over the piezoelectric layer; a passivation layer disposed over the second electrode; and a ring disposed between the substrate and the passivation layer.

公开(公告)号：US09948272B2

公开(公告)日：2018-04-17

申请号：US15059789

申请日：2016-03-03

Applicant: TriQuint Semiconductor, Inc.

Inventor： Paul Stokes ,  Gernot Fattinger

IPC: H01L41/047 ,  H03H9/02 ,  H03H9/13 ,  H03H9/17

CPC classification number: H03H9/02086 ,  H01L41/047 ,  H03H9/131 ,  H03H9/175

Abstract: Embodiments of a Bulk Acoustic Wave (BAW) device including a high conductivity electrode are disclosed. In some embodiments, a BAW device includes a piezoelectric layer, a first electrode on a first surface of the piezoelectric layer, and a second electrode on a second surface of the piezoelectric layer opposite the first electrode. The second electrode includes a first metal layer and a second metal layer. The second metal layer is on the second surface of the piezoelectric layer, and the first metal layer is over a surface of the second metal layer opposite the piezoelectric layer, where the first metal layer is separated from the second metal layer by an air gap. By including the air gap, the thickness of the first metal layer (e.g., a high conductivity layer) can be increased to thereby increase the electrical conductivity of the second electrode while maintaining the performance of the BAW device.