公开(公告)号：US12072631B2

公开(公告)日：2024-08-27

申请号：US17281362

申请日：2019-10-01

申请人： NISSAN CHEMICAL CORPORATION

发明人： Shou Shimizu ,  Ryuta Mizuochi ,  Hiroyuki Wakayama ,  Yasunobu Someya

IPC分类号： G03F7/004 ,  C08G59/22 ,  C08G59/26 ,  G03F7/11 ,  H01L21/027

CPC分类号： G03F7/11 ,  C08G59/223 ,  C08G59/26 ,  H01L21/0274

摘要： A composition for forming a resist underlayer film enables the formation of a desired resist pattern; and a method for forming a resist pattern using this resist underlayer film forming composition. A resist underlayer film forming composition contains an organic solvent and a polymer that has a structure represented by formula (1) or (2) at an end of the polymer chain. (In formula (1) and formula (2), X represents a divalent organic group; A represents an aryl group having 6-40 carbon atoms; R1 represents a halogen atom, an alkyl group having 1-40 carbon atoms or an alkoxy group having 1-40 carbon atoms; each of R2 and R3 independently represents a hydrogen atom, an optionally substituted alkyl group having 1-10 carbon atoms, an aryl group having 6-40 carbon atoms or a halogen atom; each of n1 and n3 independently represents an integer of 1-12; and n2 represents an integer of 0-11.)

公开(公告)号：US12072630B2

公开(公告)日：2024-08-27

申请号：US17055433

申请日：2019-05-21

申请人： NISSAN CHEMICAL CORPORATION

发明人： Hikaru Tokunaga ,  Hiroto Ogata ,  Keisuke Hashimoto ,  Makoto Nakajima

IPC分类号： G03F7/11 ,  C08G8/26 ,  C08G10/00 ,  C09D161/12 ,  C09D161/18 ,  H01L21/027 ,  H01L21/311

CPC分类号： G03F7/11 ,  C08G8/26 ,  C08G10/00 ,  C09D161/12 ,  C09D161/18 ,  H01L21/0274 ,  H01L21/31144

摘要： A resist underlayer film-forming composition formed into a flat film which can exhibit high etching resistance, a good dry etching velocity ratio and a good optical constant, has a good covering property even against a so-called step-structure substrate, and has a small film thickness difference after being embedded. Also, a method for producing a polymer suitable for the resist underlayer film-forming composition; a resist underlayer film using the resist underlayer film-forming composition; and a method for manufacturing a semiconductor device. A resist underlayer film-forming composition containing a reaction product of an aromatic compound having 6 to 60 carbon atoms with a carbonyl group in a cyclic carbonyl compound having 3 to 60 carbon atoms and a solvent, wherein the reaction product has such a structure that one of the carbon atoms in the cyclic carbonyl compound links two molecules of the aromatic compound to each other.

公开(公告)号：US20240282577A1

公开(公告)日：2024-08-22

申请号：US18649086

申请日：2024-04-29

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yen-Yu CHEN ,  Chih-Cheng LIU ,  Yi-Chen KUO ,  Jr-Hung LI ,  Tze-Liang LEE ,  Ming-Hui WENG ,  Yahru CHENG

IPC分类号： H01L21/027 ,  H01L21/308 ,  H01L21/311

CPC分类号： H01L21/0274 ,  H01L21/3086 ,  H01L21/31144

摘要： A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate and forming a dehydrated film over the photoresist layer. The photoresist layer is selectively exposed to actinic radiation to form an exposed portion and an unexposed portion of the photoresist layer. The photoresist layer is developed to remove the unexposed portion of the photoresist layer and a first portion of the dehydrated film over the unexposed portion of the photoresist layer. In an embodiment, the method includes etching the substrate by using the exposed portion of the photoresist layer as a mask.

公开(公告)号：US20240280895A1

公开(公告)日：2024-08-22

申请号：US18381773

申请日：2023-10-19

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jinnam YEEM ,  Hoin LEE ,  Dongkyun LEE ,  Sangchul YANG ,  Byung-Hyun LEE

IPC分类号： G03F1/70 ,  H01L21/027

CPC分类号： G03F1/70 ,  H01L21/027 ,  H10B12/315

摘要： A method of fabricating a semiconductor device may include forming a target pattern on a first wafer by performing a first exposure process, measuring a misalignment value of the target pattern, calculating a block misalignment value and a pattern misalignment value based on the misalignment value, calculating a block correction value based on the block misalignment value and calculating a pattern correction value based on the pattern misalignment value, and performing a second exposure process on a second wafer, based on the block correction value and the pattern correction value.

公开(公告)号：US12068387B2

公开(公告)日：2024-08-20

申请号：US17505583

申请日：2021-10-19

申请人： International Business Machines Corporation

发明人： Ruqiang Bao

IPC分类号： H01L21/027 ,  H01L29/49 ,  H01L29/78

CPC分类号： H01L29/4966 ,  H01L21/0274 ,  H01L29/4908 ,  H01L29/785

摘要： A semiconductor structure includes a common semiconductor substrate; a first field effect transistor (FET) gate formed on the substrate, which has a first threshold voltage and comprises a first work function metal and a first barrier layer, and a second FET gate formed on the substrate, which has a second threshold voltage and comprises the first work function metal, the first barrier layer, and a second work function metal.

公开(公告)号：US20240274438A1

公开(公告)日：2024-08-15

申请号：US18644661

申请日：2024-04-24

申请人： TOKYO ELECTRON LIMITED

发明人： Takashi YAMAUCHI ,  Shinichiro KAWAKAMI ,  Masashi ENOMOTO

IPC分类号： H01L21/033 ,  H01L21/027 ,  H01L21/311 ,  H01L21/67

CPC分类号： H01L21/0337 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/31144 ,  H01L21/6715

摘要： A technique for suppressing a metal component from remaining at a bottom of a mask pattern when the mask pattern is formed using a metal-containing resist film. A developable anti reflection film 103 is previously formed below a resist film 104. Further, after exposing and developing the wafer W, TMAH is supplied to the wafer W to remove a surface of the anti-reflection film 103 facing a bottom of the recess pattern 110 of the resist film 104. Therefore, the metal component 105 can be suppressed from remaining at the bottom of the recess pattern 110. Therefore, when the SiO2 film 102 is subsequently etched using the pattern of the resist film 104, the etching is not hindered, so that defects such as bridges can be suppressed.

公开(公告)号：US20240264526A1

公开(公告)日：2024-08-08

申请号：US18631832

申请日：2024-04-10

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： An-Ren ZI ,  Chin-Hsiang LIN ,  Ching-Yu CHANG ,  Yahru CHENG

IPC分类号： G03F7/004 ,  G03F7/038 ,  G03F7/32 ,  H01L21/027 ,  H01L21/47

CPC分类号： G03F7/0048 ,  G03F7/038 ,  G03F7/0382 ,  G03F7/32 ,  G03F7/322 ,  G03F7/325 ,  H01L21/0273 ,  H01L21/47

摘要： A photoresist developer includes a solvent having Hansen solubility parameters of 15 pKa>9.5; and a chelate.

公开(公告)号：US20240255849A1

公开(公告)日：2024-08-01

申请号：US18463646

申请日：2023-09-08

申请人： Inha University Research and Business Foundation

发明人： Jinkyun LEE ,  Gayoung KIM ,  Yejin KU

IPC分类号： G03F7/004 ,  C07C41/09 ,  C07F7/18 ,  H01L21/027

CPC分类号： G03F7/0045 ,  C07C41/09 ,  C07F7/1804 ,  C07F7/1888 ,  H01L21/0274

摘要： Provided are a resist compound for photolithography, a method for forming the same, and a method for manufacturing a semiconductor device using the same. The resist compound is represented by Formula 1.

公开(公告)号：US12051590B2

公开(公告)日：2024-07-30

申请号：US17697019

申请日：2022-03-17

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Yongchul Jeong ,  Sangjin Kim ,  Yigwon Kim ,  Jinhee Jang ,  Taemin Choi

IPC分类号： H01L21/033 ,  G03F7/20 ,  H01L21/02 ,  H01L21/027

CPC分类号： H01L21/0337 ,  G03F7/2002 ,  H01L21/0206 ,  H01L21/0274

摘要： A method of forming a pattern includes forming an etching object layer on a substrate. A photoresist layer including a metal, oxygen and an organic material is formed on the etching object layer. An exposure process is performed on the photoresist layer. A developing process is performed on the photoresist layer to form a photoresist pattern including a metal oxide. Ozone is provided onto the substrate to remove a residue of the photoresist layer that includes the organic material. The etching object layer is etched using the photoresist pattern as an etching mask.

公开(公告)号：US12051589B2

公开(公告)日：2024-07-30

申请号：US17448284

申请日：2021-09-21

申请人： Lam Research Corporation

发明人： David Charles Smith ,  Richard Wise ,  Arpan Pravin Mahorowala ,  Patrick A van Cleemput ,  Bart J. van Schravendijk

IPC分类号： H01L21/033 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56 ,  H01J37/32 ,  H01L21/02 ,  H01L21/027 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/67

CPC分类号： H01L21/0332 ,  C23C16/407 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/56 ,  H01J37/32091 ,  H01L21/02175 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0271 ,  H01L21/0337 ,  H01L21/31111 ,  H01L21/31122 ,  H01L21/31144 ,  H01L21/32137 ,  H01L21/32139 ,  H01L21/67069 ,  H01J37/32862 ,  H01J2237/3321 ,  H01J2237/3341 ,  H01J2237/3342

摘要： Thin tin oxide films are used as spacers in semiconductor device manufacturing. In one implementation, formation of spacers involves deposition of a tin oxide layer on a semiconductor substrate having multiple protruding features. The deposition is performed in a deposition apparatus having a controller with program instructions configured to cause sequential contacting of the semiconductor substrate with a tin-containing precursor and an oxygen-containing precursor such as to coat the semiconductor substrate having the protruding features with a tin oxide layer. Next, tin oxide film is removed from horizontal surfaces, without being completely removed from the sidewalls of the protruding features. Next, the material of protruding features is etched away, leaving tin oxide spacers on the semiconductor substrate.