公开(公告)号：US20090017363A1

公开(公告)日：2009-01-15

申请号：US12234104

申请日：2008-09-19

Applicant: Chunming Niu ,  Calvin Y.H. Chow ,  Stephen A. Empedocles ,  J. Wallace Parce

Inventor： Chunming Niu ,  Calvin Y.H. Chow ,  Stephen A. Empedocles ,  J. Wallace Parce

IPC: H01M4/86

CPC classification number: H01M4/8605 ,  B82Y30/00 ,  H01M4/881 ,  H01M4/8846 ,  H01M4/8853 ,  H01M4/8867 ,  H01M4/90 ,  H01M4/9075 ,  H01M4/921 ,  H01M4/925 ,  H01M4/926 ,  H01M8/023 ,  H01M8/0232 ,  H01M8/0234 ,  H01M8/0236 ,  H01M8/0241 ,  H01M8/1004 ,  H01M8/1007 ,  H01M8/1011 ,  H01M8/1086 ,  Y02E60/523 ,  Y02P70/56 ,  Y10S977/762 ,  Y10S977/948

Abstract: The present invention discloses nanowires for use in a fuel cell comprising a metal catalyst deposited on a surface of the nanowires. A membrane electrode assembly for a fuel cell is disclosed which generally comprises a proton exchange membrane, an anode electrode, and a cathode electrode, wherein at least one or more of the anode electrode and cathode electrode comprise an interconnected network of the catalyst supported nanowires. Methods are also disclosed for preparing a membrane electrode assembly and fuel cell based upon an interconnected network of nanowires.

Abstract translation: 本发明公开了一种用于燃料电池的纳米线，其包括沉积在纳米线表面上的金属催化剂。 公开了一种用于燃料电池的膜电极组件，其通常包括质子交换膜，阳极电极和阴极电极，其中阳极电极和阴极电极中的至少一个或多个包括催化剂负载的纳米线的互连网络。 还公开了基于互连的纳米线网络来制备膜电极组件和燃料电池的方法。

公开(公告)号：US07468315B2

公开(公告)日：2008-12-23

申请号：US11225951

申请日：2005-09-14

Applicant: Mihai A. Buretea ,  Jian Chen ,  Calvin Y. H. Chow ,  Chunming Niu ,  Yaoling Pan ,  J. Wallace Parce ,  Linda T. Romano ,  David P. Stumbo

Inventor： Mihai A. Buretea ,  Jian Chen ,  Calvin Y. H. Chow ,  Chunming Niu ,  Yaoling Pan ,  J. Wallace Parce ,  Linda T. Romano ,  David P. Stumbo

IPC: H01L21/28 ,  H01L21/3205

CPC classification number: H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/78681 ,  H01L29/78696 ,  H01L33/06 ,  H01L33/24 ,  H01L51/0048 ,  H01L51/0545 ,  H01L2924/0002 ,  Y10T428/2913 ,  H01L2924/00

Abstract: The present invention relates to a system and process for producing a nanowire-material composite. A substrate having nanowires attached to a portion of at least one surface is provided. A material is deposited over the portion to form the nanowire-material composite. The process further optionally includes separating the nanowire-material composite from the substrate to form a freestanding nanowire-material composite. The freestanding nanowire material composite is optionally further processed into an electronic substrate. A variety of electronic substrates can be produced using the methods described herein. For example, a multi-color light-emitting diode can be produced from multiple, stacked layers of nanowire-material composites, each composite layer emitting light at a different wavelength.

Abstract translation: 本发明涉及纳米线材料复合体的制造方法和制造方法。 提供了具有连接到至少一个表面的一部分的纳米线的衬底。 在该部分上沉积材料以形成纳米线材料复合材料。 该方法进一步可选地包括从衬底分离纳米线材料复合物以形成独立的纳米线材料复合材料。 独立的纳米线材料复合材料任选进一步加工成电子基片。 可以使用本文所述的方法来生产各种电子基板。 例如，多个发光二极管可以由多个层叠的纳米线材料复合体制成，每个复合层发射不同波长的光。

公开(公告)号：US07413723B2

公开(公告)日：2008-08-19

申请号：US11271422

申请日：2005-11-09

Applicant: Chunming Niu ,  David Moy ,  Asif Chishti ,  Robert Hoch

Inventor： Chunming Niu ,  David Moy ,  Asif Chishti ,  Robert Hoch

IPC: B82B3/00

CPC classification number: H01G11/36 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/158 ,  C01B32/162 ,  C01B32/168 ,  C01B32/174 ,  C01B2202/06 ,  C01B2202/10 ,  C01B2202/28 ,  C01B2202/34 ,  C01B2202/36 ,  C04B35/6265 ,  C04B35/83 ,  C04B2235/5252 ,  C04B2235/5264 ,  C04B2235/5288 ,  D01F11/12 ,  D01F11/122 ,  D01F11/123 ,  H01M4/583 ,  H01M4/96 ,  Y02E60/13 ,  Y02P20/544 ,  Y10S977/847 ,  Y10T428/292 ,  Y10T428/30

Abstract: Methods of oxidizing multiwalled carbon nanotubes are provided. The multiwalled carbon nanotubes are oxidized by contacting the carbon nanotubes with gas-phase oxidizing agents such as CO2, O2, steam, N2O, NO, NO2, O3, and ClO2. Near critical and supercritical water can also be used as oxidizing agents. The multiwalled carbon nanotubes oxidized according to methods of the invention can be used to prepare rigid porous structures which can be utilized to form electrodes for fabrication of improved electrochemical capacitors.

Abstract translation: 提供氧化多壁碳纳米管的方法。 多壁碳纳米管通过使碳纳米管与气相氧化剂如CO 2，O 2，O 2，N 2，N 2， O，NO，NO 2，O 3和ClO 2。 近临界和超临界水也可用作氧化剂。 根据本发明的方法氧化的多壁碳纳米管可用于制备可用于形成用于制造改进的电化学电容器的电极的刚性多孔结构。

公开(公告)号：US20080105855A1

公开(公告)日：2008-05-08

申请号：US11696088

申请日：2007-04-03

Applicant: Mihai Buretea ,  Stephen Empedocles ,  Chunming Niu ,  Erik C. Scher

Inventor： Mihai Buretea ,  Stephen Empedocles ,  Chunming Niu ,  Erik C. Scher

IPC: G02F1/21

CPC classification number: G02B1/045 ,  B82Y20/00 ,  B82Y30/00 ,  C03C14/006 ,  C03C2214/16 ,  C08L83/04 ,  F24S23/12 ,  G02F2202/36 ,  H01L31/0547 ,  H01L31/055 ,  H01S3/0632 ,  H01S3/169 ,  H01S5/10 ,  Y02E10/40 ,  Y02E10/52 ,  Y10T428/29 ,  C08L83/00

Abstract: This invention provides composite materials comprising nanostructures (e.g., nanowires, branched nanowires, nanotetrapods, nanocrystals, and nanoparticles). Methods and compositions for making such nanocomposites are also provided, as are articles comprising such composites. Waveguides and light concentrators comprising nanostructures (not necessarily as part of a nanocomposite) are additional features of the invention.

Abstract translation: 本发明提供了包含纳米结构（例如纳米线，支链纳米线，纳米四极体，纳米晶体和纳米颗粒）的复合材料。 还提供了制备这种纳米复合材料的方法和组合物，以及包含这种复合材料的制品。 包含纳米结构（不一定作为纳米复合材料的一部分）的波导和聚光器是本发明的附加特征。

公开(公告)号：US20080102020A1

公开(公告)日：2008-05-01

申请号：US11841449

申请日：2007-08-20

Applicant: Chunming Niu ,  David Moy ,  Asif Chishti ,  Robert Hoch

Inventor： Chunming Niu ,  David Moy ,  Asif Chishti ,  Robert Hoch

IPC: D01F9/12

CPC classification number: H01G11/36 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/158 ,  C01B32/162 ,  C01B32/168 ,  C01B32/174 ,  C01B2202/06 ,  C01B2202/10 ,  C01B2202/28 ,  C01B2202/34 ,  C01B2202/36 ,  C04B35/6265 ,  C04B35/83 ,  C04B2235/5252 ,  C04B2235/5264 ,  C04B2235/5288 ,  D01F11/12 ,  D01F11/122 ,  D01F11/123 ,  H01M4/583 ,  H01M4/96 ,  Y02E60/13 ,  Y02P20/544 ,  Y10S977/847 ,  Y10T428/292 ,  Y10T428/30

Abstract: Methods of oxidizing multiwalled carbon nanotubes are provided. The multiwalled carbon nanotubes are oxidized by contacting the carbon nanotubes with gas-phase oxidizing agents such as CO2, O2, steam, N2O, NO, NO2, O3, and ClO2. Near critical and supercritical water can also be used as oxidizing agents. The multiwalled carbon nanotubes oxidized according to methods of the invention can be used to prepare rigid porous structures which can be utilized to form electrodes for fabrication of improved electrochemical capacitors.

Abstract translation: 提供氧化多壁碳纳米管的方法。 多壁碳纳米管通过使碳纳米管与气相氧化剂如CO 2，O 2，O 2，N 2，N 2， O，NO，NO 2，O 3和ClO 2。 近临界和超临界水也可用作氧化剂。 根据本发明的方法氧化的多壁碳纳米管可用于制备可用于形成用于制造改进的电化学电容器的电极的刚性多孔结构。

公开(公告)号：US20080038520A1

公开(公告)日：2008-02-14

申请号：US11641939

申请日：2006-12-20

Applicant: Yaoling Pan ,  Xiangfeng Duan ,  Robert Dubrow ,  Jay Goldman ,  Shahriar Mostarshed ,  Chunming Niu ,  Linda Romano ,  David Stumbo ,  Alice Fischer-Colbrie ,  Vijendra Sahi ,  Virginia Robbins

Inventor： Yaoling Pan ,  Xiangfeng Duan ,  Robert Dubrow ,  Jay Goldman ,  Shahriar Mostarshed ,  Chunming Niu ,  Linda Romano ,  David Stumbo ,  Alice Fischer-Colbrie ,  Vijendra Sahi ,  Virginia Robbins

IPC: B32B15/02 ,  B05D5/12

CPC classification number: C30B29/605 ,  B82Y30/00 ,  C30B11/12 ,  C30B29/06 ,  Y10T428/24917

Abstract: The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors, as well as us of patterned substrates to grow oriented nanowires. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.

公开(公告)号：US20070238314A1

公开(公告)日：2007-10-11

申请号：US11225951

申请日：2005-09-14

Applicant: Mihai Buretea ,  Jian Chen ,  Calvin Chow ,  Chunming Niu ,  Yaoling Pan ,  J. Parce ,  Linda Romano ,  David Stumbo

Inventor： Mihai Buretea ,  Jian Chen ,  Calvin Chow ,  Chunming Niu ,  Yaoling Pan ,  J. Parce ,  Linda Romano ,  David Stumbo

IPC: H01L21/31

CPC classification number: H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/78681 ,  H01L29/78696 ,  H01L33/06 ,  H01L33/24 ,  H01L51/0048 ,  H01L51/0545 ,  H01L2924/0002 ,  Y10T428/2913 ,  H01L2924/00

Abstract: The present invention relates to a system and process for producing a nanowire-material composite. A substrate having nanowires attached to a portion of at least one surface is provided. A material is deposited over the portion to form the nanowire-material composite. The process further optionally comprises separating the nanowire-material composite from the substrate to form a freestanding nanowire-material composite. The freestanding nanowire material composite is optionally further processed into a electronic substrate. A variety of electronic substrates can be produced using the methods described herein. For example, a multi-color light-emitting diode can be produced from multiple, stacked layers of nanowire-material composites, each composite layer emitting light at a different wavelength.

Abstract translation: 本发明涉及纳米线材料复合体的制造方法和制造方法。 提供了具有连接到至少一个表面的一部分的纳米线的衬底。 在该部分上沉积材料以形成纳米线材料复合材料。 该方法进一步任选地包括从衬底分离纳米线材料复合物以形成独立的纳米线材料复合材料。 独立的纳米线材料复合材料任选进一步加工成电子基片。 可以使用本文所述的方法来生产各种电子基板。 例如，多个发光二极管可以由多个层叠的纳米线材料复合体制成，每个复合层发射不同波长的光。

公开(公告)号：US07273732B2

公开(公告)日：2007-09-25

申请号：US11490636

申请日：2006-07-21

Applicant: Yaoling Pan ,  Xiangfeng Duan ,  Robert S. Dubrow ,  Jay L. Goldman ,  Shahriar Mostarshed ,  Chunming Niu ,  Linda T. Romano ,  Dave Stumbo

Inventor： Yaoling Pan ,  Xiangfeng Duan ,  Robert S. Dubrow ,  Jay L. Goldman ,  Shahriar Mostarshed ,  Chunming Niu ,  Linda T. Romano ,  Dave Stumbo

IPC: H01L51/40

CPC classification number: H01L29/0673 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B32/18 ,  C30B11/12 ,  C30B25/00 ,  C30B29/06 ,  C30B29/60 ,  C30B29/605 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02521 ,  H01L21/02573 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0665 ,  H01L29/66477 ,  H01L29/78 ,  H01L29/7854 ,  H01L2924/0002 ,  Y10S438/962 ,  Y10S977/742 ,  Y10S977/743 ,  Y10S977/843 ,  Y10S977/891 ,  H01L2924/00

Abstract: The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.

Abstract translation: 本发明涉及用于纳米线生长和收获的系统和方法。 在一个实施方案中，提供了纳米线生长和掺杂的方法，包括使用硅前体的组合的用于外延取向的纳米线生长的方法。 在本发明的另一方面，提供了通过使用牺牲生长层来提高纳米线质量的方法。 在本发明的另一方面，提供了将纳米线从一个衬底转移到另一个衬底的方法。

公开(公告)号：US20060273328A1

公开(公告)日：2006-12-07

申请号：US11440227

申请日：2006-05-24

Applicant: Chunming Niu ,  Stephen Empedocles ,  David Zaziski

Inventor： Chunming Niu ,  Stephen Empedocles ,  David Zaziski

IPC: H01L33/00

CPC classification number: H01L33/20 ,  H01L33/24 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Systems and methods to fabricate macroelectronic light emitting devices using densely oriented nanowires are disclosed. In one embodiment, core nanowires are synthesized and an insulating shell is fabricated around the nanowires. The nanowire core-shell structures are then deposited on a substrate to create a densely oriented nanowire thin film. Once the densely oriented nanowire thin film is created, a metal-insulator nanowire structure is fabricated by layering a metal on the nanowire thin film. Ohmic contacts are then created on the metal-insulator nanowire structure for operation. Application of electrical signals to the ohmic contacts causes light emission from the metal-insulator nanowire structure. Light emitting devices having densely oriented nanowire thin films are also disclosed. In an embodiment the light emitting device is, for example, a LED. The nanowires can include, for example, GaN, InP, CdS nanowires or a combination of these and other nanowires. Different colors of light can be produced based on the type of nanowire, the combination of nanowire types and the physical characteristics of the nanowires.

Abstract translation: 公开了使用密集定向的纳米线制造宏观电子发光器件的系统和方法。 在一个实施例中，合成核心纳米线，并在纳米线周围制造绝缘壳。 然后将纳米线核 - 壳结构沉积在基底上以产生致密定向的纳米线薄膜。 一旦产生致密取向的纳米线薄膜，就通过在纳米线薄膜上分层金属来制造金属 - 绝缘体纳米线结构。 然后在金属 - 绝缘体纳米线结构上形成欧姆接触用于操作。 将电信号施加到欧姆接触引起来自金属 - 绝缘体纳米线结构的光发射。 还公开了具有致密取向的纳米线薄膜的发光器件。 在一个实施例中，发光器件例如是LED。 纳米线可以包括例如GaN，InP，CdS纳米线或这些和其它纳米线的组合。 可以基于纳米线的类型，纳米线类型和纳米线的物理特性的组合来产生不同颜色的光。

公开(公告)号：US07135728B2

公开(公告)日：2006-11-14

申请号：US11106340

申请日：2005-04-13

Applicant: Xiangfeng Duan ,  Chunming Niu ,  Stephen A. Empedocles ,  Linda T. Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence A. Bock ,  David P. Stumbo ,  Parce J. Wallace ,  Jay L. Goldman

Inventor： Xiangfeng Duan ,  Chunming Niu ,  Stephen A. Empedocles ,  Linda T. Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence A. Bock ,  David P. Stumbo ,  Parce J. Wallace ,  Jay L. Goldman

IPC: H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC classification number: H01L29/0665 ,  B82Y10/00 ,  H01F1/405 ,  H01L27/092 ,  H01L27/12 ,  H01L27/1292 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78696 ,  H01L31/035281 ,  H01L33/18 ,  H01L33/20 ,  H01L33/24 ,  H01L51/0048 ,  H01L51/0504 ,  H01L51/0545 ,  H01L51/0595 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/781 ,  Y10S977/789 ,  Y10S977/938

Abstract: A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.