公开(公告)号：US09030405B2

公开(公告)日：2015-05-12

申请号：US13164747

申请日：2011-06-20

Applicant: Steve Nasiri ,  Joseph Jiang ,  Shang-Hung Lin ,  Yuan Zheng

Inventor： Steve Nasiri ,  Joseph Jiang ,  Shang-Hung Lin ,  Yuan Zheng

IPC: G09G5/00 ,  G06F3/0346 ,  G06F3/01 ,  G06F3/038

CPC classification number: G06F3/0346 ,  G06F3/017 ,  G06F3/0383

Abstract: Described herein is an intelligent remote controlling device. The device can include a six-axis motion sensor to accurately track three dimensional hand motions. For example, the sensors can include a three-axis accelerometer and a three-axis gyroscope. The remote control device can also include a processing unit integrated with the motion sensors in a single module. The processing unit can convert data regarding the hand motion to data regarding a cursor motion for a cursor that will be displayed on a screen of an electronic device. The processing unit can be integrated with the motion sensors in a single module. The processing unit can include at least two modes of functionality corresponding to different types of hand motion: a one to one mode where the cursor directly tracks the hand motion and a non-linear mode that filters data from the motion sensors to eliminate hand jitter.

Abstract translation: 这里描述的是智能遥控装置。 该装置可以包括六轴运动传感器以精确地跟踪三维手运动。 例如，传感器可以包括三轴加速度计和三轴陀螺仪。 遥控装置还可以包括在单个模块中与运动传感器集成的处理单元。 处理单元可以将关于手动的数据转换为关于将在电子设备的屏幕上显示的光标的光标运动的数据。 处理单元可以与单个模块中的运动传感器集成。 处理单元可以包括对应于不同类型的手动的功能的至少两种模式：光标直接跟踪手动的一对一模式，以及过滤来自运动传感器的数据以消除手抖动的非线性模式。

公开(公告)号：US20150096956A1

公开(公告)日：2015-04-09

申请号：US14493303

申请日：2014-09-22

Applicant: Chia-Hung LIN ,  Chan-Wei KUAN

Inventor： Chia-Hung LIN ,  Chan-Wei KUAN

IPC: A61J9/06 ,  A61J9/08

CPC classification number: A61J9/08 ,  A61J9/0615 ,  A61J9/0623 ,  A61J9/0669

Abstract: A baby bottle cover with tactile stimulation design is used to cover a baby bottle, the baby bottle includes a silicone case with an inner surface and an outer surface, and the inner surface defines an inner surface which conforms with the shape of the baby bottle. A plurality of the conical portions is integrally formed on the outer surface of the silicone case. When the baby holds the bottle, the soft conical portions formed on the outer surface of the baby bottle cover come into contact with the baby's hands to promote the development of baby's tactile sense.

Abstract translation: 使用具有触觉刺激设计的婴儿奶瓶盖来覆盖婴儿奶瓶，婴儿奶瓶包括具有内表面和外表面的硅壳，并且内表面限定符合婴儿奶瓶形状的内表面。 多个锥形部分一体地形成在硅树脂外壳的外表面上。 当婴儿握住瓶子时，形成在婴儿奶瓶盖的外表面上的软锥形部分与婴儿的手接触以促进婴儿触感的发展。

公开(公告)号：US08987897B2

公开(公告)日：2015-03-24

申请号：US13109740

申请日：2011-05-17

Applicant: Kuei-Ti Chan ,  Tzu-Hung Lin ,  Ching-Liou Huang

Inventor： Kuei-Ti Chan ,  Tzu-Hung Lin ,  Ching-Liou Huang

IPC: H01L23/48 ,  H01L23/522 ,  H01L23/00 ,  H01Q23/00 ,  H01L23/525

CPC classification number: H01L23/528 ,  H01L23/3171 ,  H01L23/5227 ,  H01L23/525 ,  H01L23/645 ,  H01L23/66 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2223/6677 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05082 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05572 ,  H01L2224/05655 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11912 ,  H01L2224/13023 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/73204 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/014 ,  H01L2924/12 ,  H01L2924/1206 ,  H01Q23/00 ,  H01L2224/05552

Abstract: The invention provides a semiconductor package. The semiconductor package includes a substrate. A first passivation layer is disposed on the substrate. An under bump metallurgy layer is disposed on the first passivation layer. A passive device is disposed on the under bump metallurgy layer.

Abstract translation: 本发明提供一种半导体封装。 半导体封装包括衬底。 第一钝化层设置在基板上。 凸块下金属层设置在第一钝化层上。 无源器件设置在凸块下金属层上。

公开(公告)号：US08890145B2

公开(公告)日：2014-11-18

申请号：US13288579

申请日：2011-11-03

Applicant: Hsin-Hung Lin ,  Jung-Fang Chang ,  Ker-Yih Kao

Inventor： Hsin-Hung Lin ,  Jung-Fang Chang ,  Ker-Yih Kao

IPC: H01L21/00 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L27/1225 ,  H01L21/441 ,  H01L21/47 ,  H01L21/471 ,  H01L21/47573 ,  H01L23/3171 ,  H01L23/481 ,  H01L27/1259 ,  H01L29/41733 ,  H01L29/41775 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed is a thin film transistor including a gate electrode on a substrate. A gate dielectric layer is disposed on the gate electrode and the substrate, and source/drain electrodes are disposed on the gate dielectric layer overlying two edge parts of the gate electrode. A channel layer is disposed on the gate dielectric layer overlying a center part of the gate electrode, and the channel region contacts the source/drain electrodes. An insulating capping layer overlies the channel layer, wherein the channel layer includes an oxide semiconductor.

Abstract translation: 公开了一种在基板上包括栅电极的薄膜晶体管。 栅极电介质层设置在栅电极和衬底上，源极/漏电极设置在覆盖栅电极的两个边缘部分的栅极电介质层上。 沟道层设置在覆盖栅极电极的中心部分的栅极电介质层上，沟道区域与源极/漏极接触。 绝缘覆盖层覆盖在沟道层上，其中沟道层包括氧化物半导体。

公开(公告)号：US20140264117A1

公开(公告)日：2014-09-18

申请号：US13846468

申请日：2013-03-18

Applicant: Hung-Lin Lai

Inventor： Hung-Lin Lai

IPC: F16L15/04

CPC classification number: F16L15/04 ,  F16K5/061 ,  F16L19/065 ,  F16L25/10 ,  F16L29/002 ,  F16L37/02

Abstract: A valve structure may include a valve body having a plurality of connecting tubes; a resilient cover, one end of which forming a ring portion and the other of which having a tapered cone portion, and the resilient cover plugs into the connecting tube through the cone portion to form a restricting position; a connecting unit that is tubular, having a tubular connecting section and a plugging section, and the plugging section plugs into the through hole of the resilient cover, so the second stopping surface is against the ring portion of the resilient cover; and a locking cover covering the tubular connecting section of the connecting unit to secure the connecting unit and the resilient cover at the connecting tube of the valve body.

Abstract translation: 阀结构可以包括具有多个连接管的阀体; 弹性盖，其一端形成环形部分，另一端具有锥形锥形部分，弹性盖通过锥形部分插入连接管中以形成限制位置; 连接单元，其是管状的，具有管状连接部分和堵塞部分，并且所述堵塞部分插入到所述弹性盖的通孔中，使得所述第二止动表面抵靠所述弹性盖的环部; 以及覆盖连接单元的管状连接部分的锁定盖，以将连接单元和弹性盖固定在阀体的连接管处。

公开(公告)号：US08828850B2

公开(公告)日：2014-09-09

申请号：US13030850

申请日：2011-02-18

Applicant: Yu-Hung Cheng ,  Chii-Horng Li ,  Tze-Liang Lee ,  Yi-Hung Lin

Inventor： Yu-Hung Cheng ,  Chii-Horng Li ,  Tze-Liang Lee ,  Yi-Hung Lin

IPC: H01L21/20 ,  H01L21/36

CPC classification number: H01L29/66636 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/02639 ,  H01L29/0847 ,  H01L29/7848

Abstract: A method for forming a semiconductor structure includes forming a gate stack over a semiconductor substrate in a wafer; forming a recess in the semiconductor substrate and adjacent the gate stack; and performing a selective epitaxial growth to grow a semiconductor material in the recess to form an epitaxy region. The step of performing the selective epitaxial growth includes performing a first growth stage with a first growth-to-etching (E/G) ratio of process gases used in the first growth stage; and performing a second growth stage with a second E/G ratio of process gases used in the second growth stage different from the first E/G ratio.

Abstract translation: 一种用于形成半导体结构的方法包括在晶片上的半导体衬底上形成栅叠层; 在所述半导体衬底中形成凹槽并邻近所述栅叠层; 以及进行选择性外延生长以在所述凹部中生长半导体材料以形成外延区域。 执行选择性外延生长的步骤包括以第一生长阶段中使用的工艺气体的第一生长蚀刻（E / G）比率进行第一生长阶段; 以及在与第一E / G比不同的第二生长阶段中使用的处理气体的第二E / G比进行第二生长阶段。

公开(公告)号：US08815735B2

公开(公告)日：2014-08-26

申请号：US13463004

申请日：2012-05-03

Applicant: Yi Jung Chen ,  Kuo Hui Su ,  Chiang Hung Lin

Inventor： Yi Jung Chen ,  Kuo Hui Su ,  Chiang Hung Lin

IPC: H01L21/44

CPC classification number: H01L27/10855 ,  H01L27/10814 ,  H01L27/10876 ,  H01L27/10885 ,  H01L27/10894

Abstract: A semiconductor device comprises a substrate, a dielectric layer, an undoped silicon layer, and a silicon material. The substrate comprises a doped region. The dielectric layer is formed on the substrate and comprises a contact hole, and the contact hole corresponds to the doped region. The undoped silicon layer is formed on the doped region. The silicon material fills the contact hole from the undoped silicon layer.

Abstract translation: 半导体器件包括衬底，电介质层，未掺杂的硅层和硅材料。 衬底包括掺杂区域。 电介质层形成在基片上并包括接触孔，接触孔对应于掺杂区域。 在掺杂区域上形成未掺杂的硅层。 硅材料从未掺杂的硅层填充接触孔。

公开(公告)号：US08809117B2

公开(公告)日：2014-08-19

申请号：US13270890

申请日：2011-10-11

Applicant: Wen-Hsiung Lu ,  Ming-Da Cheng ,  Wei-Hung Lin ,  Kuei-Wei Huang ,  Chih-Wei Lin ,  Chun-Cheng Lin ,  Chung-Shi Liu

Inventor： Wen-Hsiung Lu ,  Ming-Da Cheng ,  Wei-Hung Lin ,  Kuei-Wei Huang ,  Chih-Wei Lin ,  Chun-Cheng Lin ,  Chung-Shi Liu

IPC: H01L21/00

CPC classification number: H01L21/6835 ,  H01L21/561 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/562 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/75 ,  H01L24/81 ,  H01L24/83 ,  H01L24/97 ,  H01L2221/68372 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05554 ,  H01L2224/05572 ,  H01L2224/05599 ,  H01L2224/11444 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13169 ,  H01L2224/14135 ,  H01L2224/16225 ,  H01L2224/16238 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/75754 ,  H01L2224/7698 ,  H01L2224/81001 ,  H01L2224/81136 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2224/81907 ,  H01L2224/83102 ,  H01L2224/9205 ,  H01L2224/92125 ,  H01L2224/95001 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/3511 ,  H01L2924/3512 ,  H01L2924/3841 ,  Y10T29/41 ,  H01L2924/00 ,  H01L2224/81 ,  H01L2924/00012 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2224/05552 ,  H01L2924/013

Abstract: Packaging process tools and packaging methods for semiconductor devices are disclosed. In one embodiment, a packaging process tool for semiconductor devices includes a mechanical structure including a frame. The frame includes a plurality of apertures adapted to retain a plurality of integrated circuit dies therein. The frame includes at least one hollow region.

Abstract translation: 公开了用于半导体器件的封装处理工具和封装方法。 在一个实施例中，用于半导体器件的封装处理工具包括包括框架的机械结构。 框架包括适于将多个集成电路管芯保持在其中的多个孔。 框架包括至少一个中空区域。

公开(公告)号：US08786815B2

公开(公告)日：2014-07-22

申请号：US13330627

申请日：2011-12-19

Applicant: Chih-Hung Lin ,  Wu-Liu Tsai ,  Chuan-Sheng Wei ,  Che-Chia Chang ,  Sheng-Chao Liu ,  Yu-Cheng Chen ,  Yi-Hui Li ,  Maw-Song Chen

Inventor： Chih-Hung Lin ,  Wu-Liu Tsai ,  Chuan-Sheng Wei ,  Che-Chia Chang ,  Sheng-Chao Liu ,  Yu-Cheng Chen ,  Yi-Hui Li ,  Maw-Song Chen

IPC: G02F1/133 ,  G02F1/1368

CPC classification number: G02F1/133707 ,  G02F1/136213 ,  G02F2201/40

Abstract: A display panel having a display region and a non-display region is provided. The display panel includes a plurality of pixel structures in the display region, and each pixel structure includes a scan line, a data line, a first active device, a pixel electrode, a first insulating layer, a capacitor electrode, and a second insulating layer. The first active device includes a first gate, a first channel, a first source, and a first drain. The second insulating layer covers the first insulating layer and the capacitor electrode and is located between the capacitor electrode and the first drain. At least one driving circuit is disposed in the non-display region and includes at least one second active device. Hence, a relatively thin insulating layer can be disposed between the capacitor electrode and the drain to reduce the area of the capacitor region and to achieve a desired aperture ratio.

Abstract translation: 提供具有显示区域和非显示区域的显示面板。 显示面板包括显示区域中的多个像素结构，并且每个像素结构包括扫描线，数据线，第一有源器件，像素电极，第一绝缘层，电容器电极和第二绝缘层 。 第一有源器件包括第一栅极，第一沟道，第一源极和第一漏极。 第二绝缘层覆盖第一绝缘层和电容器电极，并且位于电容器电极和第一漏极之间。 至少一个驱动电路设置在非显示区域中并且包括至少一个第二有源器件。 因此，可以在电容器电极和漏极之间设置相对薄的绝缘层，以减小电容器区域的面积并实现所需的孔径比。

公开(公告)号：US08737832B1

公开(公告)日：2014-05-27

申请号：US11704507

申请日：2007-02-09

Applicant: Shang-Hung Lin ,  Hu He ,  Ignatius B. Tjandrasuwita

Inventor： Shang-Hung Lin ,  Hu He ,  Ignatius B. Tjandrasuwita

IPC: G03B7/093

CPC classification number: H04N5/235 ,  H04N5/2357

Abstract: A flicker band automated detection system and method are presented. In one embodiment an incidental motion mitigation exposure setting method includes receiving image input information; performing a motion mitigating flicker band automatic detection process; and implementing exposure settings based upon results of the motion mitigating flicker band automatic detection process. The auto flicker band detection process includes performing a motion mitigating process on an illumination intensity indication. Content impacts on an the motion mitigated illumination intensity indication are minimized. The motion mitigated illumination intensity indication is binarized. A correlation of the motion mitigated illumination intensity and a reference illumination intensity frequency is established.