Abstract:
A flip chip package includes a carrier coupled to a die. The carrier includes: at least a via, for coupling the surface of the carrier to electrical traces in the carrier; and at least a capture pad electrically coupled to the via, wherein the capture pad is plated over the via. The die includes: at least a bond pad formed on the surface of the die; and at least a copper column, formed on the bond pad for coupling the die to the capture pad on the carrier, wherein the copper column is disposed on one side of the capture pad about the via opening only.
Abstract:
The invention provides a semiconductor package. The semiconductor package includes a semiconductor die having a central area and a peripheral area surrounding the central area. A first conductive bump is disposed on the semiconductor die in the central area. A second conductive bump is disposed on the semiconductor die in the peripheral area. An area ratio of the first conductive bump to the second conductive bump from a top view is larger than 1, and less than or equal to 3.
Abstract:
An integrated circuit (IC) package structure is provided, including: a first integrated circuit (IC) package, including: a first package substrate, having opposite first and second surfaces, wherein a first semiconductor chip is disposed over a first portion of the first surface of the first package substrate. In addition, a second integrated circuit (IC) package is disposed on a second portion different from the first portion of the first surface of the first package substrate, including: a second package substrate, having opposite third and fourth surfaces, wherein a second semiconductor chip is disposed over a portion of the third surface of the second package substrate, and the second semiconductor chip has a function different from that of the first semiconductor chip.
Abstract:
The invention provides a semiconductor package. The semiconductor package includes a substrate. A first passivation layer is disposed on the substrate. An under bump metallurgy layer is disposed on the first passivation layer. A passive device is disposed on the under bump metallurgy layer.
Abstract:
A package substrate including a conductive pattern disposed on a die attach surface of the package substrate; at least one bumping trace inlaid into the conductive pattern; and at least one gap disposed along with the bumping trace in the conductive pattern to separate the bumping trace from a bulk portion of the conductive pattern. The bumping trace may have a lathy shape from a plan view and a width substantially between 10 μm and 40 μm and a length substantially between 70 μm and 130 μm, for example.
Abstract:
The present invention is related to an interactive and multimedia medical report system and method thereof. The system comprises a test unit, a marking unit, a database, and an electronic device. The test unit enables generation of an image file, wherein a predefined tag is established in the first position and a special tag is established in the second position. The database is connected to the marking unit and stores the medical report comprising the predefined and special tags, and at least one of the tags established in the image file. The electronic device comprises a processing unit, which makes connections with the database through the communication unit for retrieval of the medical report. The electronic device further comprises a display unit, which is configured to show the predefined tag and the special tag, and at least one of the tags of the image file. The present disclosure further provides an interactive multimedia method for medical report.
Abstract:
A flip chip package includes a carrier coupled to a die. The carrier includes: at least a via, for coupling the surface of the carrier to electrical traces in the carrier; and at least a capture pad electrically coupled to the via, wherein the capture pad is plated over the via. The die includes: at least a bond pad formed on the surface of the die; and at least a copper column, formed on the bond pad for coupling the die to the capture pad on the carrier, wherein the copper column is disposed on one side of the capture pad about the via opening only.
Abstract:
The invention provides a molded interposer package and a method for fabricating the same. The molded interposer package includes a plurality of metal studs. A molding material encapsulates the metal studs leaving the bottom surfaces of the metal studs exposed. A first chip is disposed on the molding material, connecting to the top surfaces of the metal studs. A plurality of solder balls connects and contacts to the bottom surfaces of the metal studs.
Abstract:
The invention provides a semiconductor package. The semiconductor package includes a substrate. A first conductive trace is disposed on the substrate. A solder resistance layer is disposed on the substrate, having an extending portion covering a portion of the first conductive trace, wherein a width of the extending portion of the solder resistance layer is larger than that of the portion of the first conductive trace. A semiconductor die is disposed over the first conductive trace.
Abstract:
A package substrate including a conductive pattern disposed on a die attach surface of the package substrate; at least one bumping trace inlaid into the conductive pattern; and at least one gap disposed along with the bumping trace in the conductive pattern to separate the bumping trace from a bulk portion of the conductive pattern. The bumping trace may have a lathy shape from a plan view and a width substantially between 10 μm and 40 μm and a length substantially between 70 μm and 130 μm, for example.