METHOD FOR FORMING GRAPHENE USING LASER BEAM, GRAPHENE SEMICONDUCTOR MANUFACTURED BY THE SAME, AND GRAPHENE TRANSISTOR HAVING GRAPHENE SEMICONDUCTOR
    31.
    发明申请
    METHOD FOR FORMING GRAPHENE USING LASER BEAM, GRAPHENE SEMICONDUCTOR MANUFACTURED BY THE SAME, AND GRAPHENE TRANSISTOR HAVING GRAPHENE SEMICONDUCTOR 审中-公开
    使用激光束形成石墨的方法,由其制造的石墨半导体和具有石墨半导体的石墨晶体管

    公开(公告)号:US20120068161A1

    公开(公告)日:2012-03-22

    申请号:US13233553

    申请日:2011-09-15

    CPC classification number: B82Y30/00 B82Y40/00 C01B32/184 C01B32/188 H01L21/268

    Abstract: A method for forming graphene includes introducing a substrate and a carbon-containing reactant source into a chamber, and radiating a laser beam onto the substrate to decompose the carbon-containing reactant source and form graphene over the substrate using carbon atoms generated by decomposition of the carbon-containing reactant source. A carbon-containing gas (methane) decomposes upon radiation of a laser beam. The carbon-containing gas has a decomposition rate on the order of femtoseconds and the laser beam has a pulse on the order of nanoseconds or more. The graphene is grown in a single layer along the surface of the substrate. Then, the graphene is selectively patterned using a laser beam to form a desired pattern.

    Abstract translation: 用于形成石墨烯的方法包括将基底和含碳反应物源引入室中,并且将激光束辐射到基底上以分解含碳反应物源,并使用由分解产生的碳原子在基底上形成石墨烯 含碳反应物源。 含碳气体(甲烷)在激光束的辐射下分解。 含碳气体具有飞秒级的分解率,激光束具有大约数毫安以上的脉冲。 石墨烯沿着衬底的表面生长在单层中。 然后,使用激光束选择性地图案化石墨烯以形成期望的图案。

    LIGHT EMITTING DIODE DISPLAY AND METHOD OF MANUFACTURING THE SAME
    34.
    发明申请
    LIGHT EMITTING DIODE DISPLAY AND METHOD OF MANUFACTURING THE SAME 有权
    发光二极管显示器及其制造方法

    公开(公告)号:US20110057211A1

    公开(公告)日:2011-03-10

    申请号:US12852463

    申请日:2010-08-07

    CPC classification number: H01L21/00 H01L27/153 H01L33/0079

    Abstract: A method of manufacturing LED display is provided. The method provides a sacrificial substrate on which RGB LED device layers are formed, respectively. The method etches and patterns the LED device layer to manufacture RGB LED devices, respectively. The method removes the sacrificial substrate in a lower side of the LED device. The method contacts a stamping processor to the RGB LED devices to separate the RGB LED devices from the sacrificial substrate. The method transfers the LED device, which is attached to the stamping processor, to a receiving substrate.

    Abstract translation: 提供了一种制造LED显示器的方法。 该方法分别提供形成RGB LED器件层的牺牲基板。 该方法分别对LED器件层进行蚀刻和图案分别制造RGB LED器件。 该方法移除LED器件下侧的牺牲衬底。 该方法将冲压处理器与RGB LED器件接触,以将RGB LED器件与牺牲衬底分离。 该方法将附接到冲压处理器的LED装置传送到接收基板。

    FLEXIBLE PIEZOELECTRIC DEVICE AND FLEXIBLE CAPACITOR MANUFACTURED BY THE SAME, AND MANUFACTURING METHOD FOR FLEXIBLE SENSORS
    35.
    发明申请
    FLEXIBLE PIEZOELECTRIC DEVICE AND FLEXIBLE CAPACITOR MANUFACTURED BY THE SAME, AND MANUFACTURING METHOD FOR FLEXIBLE SENSORS 有权
    柔性压电器件及其制造的柔性电容器,以及柔性传感器的制造方法

    公开(公告)号:US20110000060A1

    公开(公告)日:2011-01-06

    申请号:US12730907

    申请日:2010-03-24

    Abstract: Provided are a method for manufacturing a flexible device, a flexible device, a flexible piezoelectric device and a flexible capacitor manufactured by the same, and a method for manufacturing a flexible sensor. A method for manufacturing a flexible device includes: laminating a first metal layer on a silicon oxide layer on a silicon substrate; laminating a device on the first metal layer; annealing the first metal layer to oxidize the first metal into a first metal oxide; etching the first metal oxide so as to separate the device from the silicon oxide layer; and transferring the separated device to a flexible substrate using a transfer layer. According to the disclosed method for manufacturing a flexible device, differently from the prior art where the silicon substrate itself is etched, the metal oxide layer laminated on the silicon substrate is etched to separate the device from the substrate. As a result, physical damage of the silicon substrate may be prevented and the cost of using the expensive single-crystal silicon substrate may be reduced.

    Abstract translation: 提供一种柔性器件的制造方法,柔性器件,柔性压电器件和由其制造的柔性电容器以及柔性传感器的制造方法。 柔性器件的制造方法包括:在硅衬底上的氧化硅层上层叠第一金属层; 在第一金属层上层压器件; 退火所述第一金属层以将所述第一金属氧化成第一金属氧化物; 蚀刻第一金属氧化物以将器件与氧化硅层分离; 以及使用转移层将分离的装置转移到柔性基板。 根据所公开的用于制造柔性器件的方法,不同于蚀刻硅衬底本身的现有技术,蚀刻层叠在硅衬底上的金属氧化物层以将器件与衬底分离。 结果,可以防止硅衬底的物理损坏,并且可能降低使用昂贵的单晶硅衬底的成本。

    Decal transfer lithography
    37.
    发明授权
    Decal transfer lithography 有权
    贴片转印光刻

    公开(公告)号:US07662545B2

    公开(公告)日:2010-02-16

    申请号:US10965279

    申请日:2004-10-14

    Abstract: A method of making a microstructure includes selectively activating a portion of a surface of a silicon-containing elastomer, contacting the activated portion with a substance, and bonding the activated portion and the substance, such that the activated portion of the surface and the substance in contact with the activated portion are irreversibly attached. The selective activation may be accomplished by positioning a mask on the surface of the silicon-containing elastomer, and irradiating the exposed portion with UV radiation.

    Abstract translation: 制造微结构的方法包括选择性地激活含硅弹性体的表面的一部分,使活化部分与物质接触,并且将活化部分和物质接合,使得表面的活化部分和物质在 与活化部分的接触不可逆地附着。 选择性激活可以通过将掩模定位在含硅弹性体的表面上,并用UV辐射照射暴露部分来实现。

Patent Agency Ranking