公开(公告)号：US10269633B2

公开(公告)日：2019-04-23

申请号：US15811647

申请日：2017-11-13

Applicant: Applied Materials, Inc.

Inventor： Bhushan N. Zope ,  Avgerinos V. Gelatos ,  Bo Zheng ,  Yu Lei ,  Xinyu Fu ,  Srinivas Gandikota ,  Sang-Ho Yu ,  Mathew Abraham

IPC: H01L21/44 ,  H01L21/768 ,  H01L21/48 ,  H01L21/02 ,  H01L21/285 ,  H01L23/532 ,  H01L29/66

Abstract: Methods for depositing a contact metal layer in contact structures of a semiconductor device are provided. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a contact metal layer on a substrate and annealing the contact metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the contact metal layer on the substrate, exposing the portion of the contact metal layer to a plasma treatment process, and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the contact metal layer to a plasma treatment process until a predetermined thickness of the contact metal layer is achieved.

公开(公告)号：US20180350606A1

公开(公告)日：2018-12-06

申请号：US16000431

申请日：2018-06-05

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Yong Wu ,  Chia Cheng Chin ,  Xinliang Lu ,  Srinivas Gandikota ,  Ziqing Duan ,  Abhijit Basu Mallick

IPC: H01L21/28 ,  H01L21/763 ,  H01L21/768

Abstract: Methods for forming 3D-NAND devices comprising recessing a poly-Si layer to a depth below a spaced oxide layer. A liner is formed on the spaced oxide layer and not on the recessed poly-Si layer. A metal layer is deposited in the gaps on the liner to form wordlines.

公开(公告)号：US20180247821A1

公开(公告)日：2018-08-30

申请号：US15961363

申请日：2018-04-24

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Yong Wu ,  Chia Cheng Chin ,  Srinivas Gandikota

IPC: H01L21/285 ,  H01L21/02

CPC classification number: H01L21/28568 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

Abstract: Methods for depositing a metal film without the use of a barrier layer are disclosed. Some embodiments comprise forming an amorphous nucleation layer comprising one or more of silicon or boron and forming a metal layer on the nucleation layer.

公开(公告)号：US20180130671A1

公开(公告)日：2018-05-10

申请号：US15805764

申请日：2017-11-07

Applicant: Applied Materials, Inc.

Inventor： Ziqing Duan ,  Yihong Chen ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/321 ,  H01L21/311 ,  H01L21/285 ,  H01L21/02 ,  H01L21/3205

CPC classification number: H01L21/32115 ,  H01L21/02175 ,  H01L21/02244 ,  H01L21/28568 ,  H01L21/31111 ,  H01L21/32051 ,  H01L21/32136

Abstract: Processing methods comprising depositing a film on a substrate surface and in a surface feature with chemical planarization to remove the film from the substrate surface, leaving the film in the feature. A pillar is grown from the film so that the pillar grows orthogonally to the substrate surface.

公开(公告)号：US20170350001A1

公开(公告)日：2017-12-07

申请号：US15679480

申请日：2017-08-17

Applicant: Applied Materials, Inc.

Inventor： Zhendong Liu ,  Rongjun Wang ,  Xianmin Tang ,  Srinivas Gandikota ,  Tza-Jing Gung ,  Muhammad M. Rasheed

IPC: C23C14/34 ,  H01J37/34

CPC classification number: C23C14/3407 ,  H01J37/342 ,  H01J37/3423

Abstract: Target assemblies and PVD chambers including target assemblies are disclosed. The target assembly includes a target that has a concave shaped target. When used in a PVD chamber, the concave target provides more radially uniform deposition on a substrate disposed in the sputtering chamber.

公开(公告)号：US20170194156A1

公开(公告)日：2017-07-06

申请号：US15461842

申请日：2017-03-17

Applicant: Applied Materials, Inc.

Inventor： Xinyu Fu ,  Srinivas Gandikota ,  Avgerinos V. Gelatos ,  Atif Noori ,  Mei Chang ,  David Thompson ,  Steve G. Ghanayem

IPC: H01L21/285 ,  C23C16/34 ,  C23C16/02 ,  C23C16/42 ,  H01L21/3205 ,  C23C16/455

CPC classification number: H01L21/28562 ,  C23C16/0272 ,  C23C16/06 ,  C23C16/14 ,  C23C16/345 ,  C23C16/42 ,  C23C16/45525 ,  C23C16/45551 ,  C23C16/45553 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45574 ,  H01L21/28088 ,  H01L21/28506 ,  H01L21/32051 ,  H01L21/32053 ,  H01L21/76877

Abstract: Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.

公开(公告)号：US09685371B2

公开(公告)日：2017-06-20

申请号：US14482601

申请日：2014-09-10

Applicant: Applied Materials, Inc.

Inventor： Bhushan N. Zope ,  Avgerinos V. Gelatos ,  Bo Zheng ,  Yu Lei ,  Xinyu Fu ,  Srinivas Gandikota ,  Sang Ho Yu ,  Mathew Abraham

IPC: H01L21/768 ,  H01L21/20 ,  H01L21/203 ,  H01L21/14 ,  H01L21/285 ,  C23C16/18

CPC classification number: H01L21/76877 ,  C23C16/18 ,  H01L21/2855 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76879 ,  H01L21/76883

Abstract: Methods for depositing a metal layer in a feature definition of a semiconductor device are provided. In one implementation, a method for depositing a metal layer for forming a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a metal layer on a substrate and annealing the metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the metal layer on the substrate, exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process until a predetermined thickness of the metal layer is achieved.

公开(公告)号：US09640400B1

公开(公告)日：2017-05-02

申请号：US14961920

申请日：2015-12-08

Applicant: Applied Materials, Inc.

Inventor： Rui Cheng ,  Abhijit Basu Mallick ,  Srinivas Gandikota ,  Pramit Manna

IPC: H01L21/336 ,  H01L21/225 ,  H01L29/66 ,  H01L21/324 ,  H01L21/02 ,  H01L29/167

CPC classification number: H01L21/2254 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/324 ,  H01L29/167 ,  H01L29/66795 ,  H01L29/66803

Abstract: Embodiments described herein generally relate to doping of three dimensional (3D) structures on a substrate. In one embodiment, a conformal dopant containing film may be deposited over the 3D structures. Suitable dopants that may be incorporated in the film may include boron, phosphorous, and other suitable dopants. The film may be subsequently annealed to diffuse the dopants into the 3D structures.

公开(公告)号：US09601339B2

公开(公告)日：2017-03-21

申请号：US14965349

申请日：2015-12-10

Applicant: Applied Materials, Inc.

Inventor： Xinyu Fu ,  Srinivas Gandikota ,  Avgerinos V. Gelatos ,  Atif Noori ,  Mei Chang ,  David Thompson ,  Steve G. Ghanayem

IPC: H01L21/285 ,  H01L21/768 ,  C23C16/14 ,  C23C16/455 ,  H01L21/28 ,  C23C16/06 ,  H01L21/3205

CPC classification number: H01L21/28562 ,  C23C16/0272 ,  C23C16/06 ,  C23C16/14 ,  C23C16/345 ,  C23C16/42 ,  C23C16/45525 ,  C23C16/45551 ,  C23C16/45553 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45574 ,  H01L21/28088 ,  H01L21/28506 ,  H01L21/32051 ,  H01L21/32053 ,  H01L21/76877

Abstract: Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.

公开(公告)号：US09230835B2

公开(公告)日：2016-01-05

申请号：US14211156

申请日：2014-03-14

Applicant: Applied Materials, Inc.

Inventor： Avgerinos V. Gelatos ,  Srinivas Gandikota ,  Seshadri Ganguli ,  Xinyu Fu ,  Bo Zheng ,  Yu Lei

IPC: H01L21/31 ,  H01L21/67 ,  H01L21/285 ,  H01L21/28 ,  H01L29/49

CPC classification number: H01L21/6723 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/285 ,  H01L21/28525 ,  H01L21/28568 ,  H01L21/6719 ,  H01L21/67207 ,  H01L29/4958 ,  H01L29/4966

Abstract: Embodiments of an integrated platform for fabricating n-type metal oxide semiconductor (NMOS) devices are provided herein. In some embodiments, an integrated platform for fabricating n-type metal oxide semiconductor (NMOS) devices may include a first deposition chamber configured to deposit a first layer atop the substrate, the first layer comprising titanium oxide (TiO2) or selenium (Se); a second deposition chamber configured to deposit a second layer atop the first layer, the second layer comprising titanium; a third deposition chamber configured to deposit a third layer atop the second layer, the third layer comprising one of titanium nitride (TiN) or tungsten nitride (WN).

Abstract translation: 本文提供了用于制造n型金属氧化物半导体（NMOS）器件的集成平台的实施例。 在一些实施例中，用于制造n型金属氧化物半导体（NMOS）器件的集成平台可以包括第一沉积室，其被配置为在衬底顶部沉积第一层，第一层包含氧化钛（TiO 2）或硒（Se）; 第二沉积室，被配置为在所述第一层顶部沉积第二层，所述第二层包含钛; 第三沉积室，被配置为在所述第二层顶部沉积第三层，所述第三层包括氮化钛（TiN）或氮化钨（WN）之一。