公开(公告)号：US20060105478A1

公开(公告)日：2006-05-18

申请号：US10987241

申请日：2004-11-12

申请人： Michael Camras ,  William Imler ,  Franklin Wall ,  Frank Steranka ,  Michael Krames ,  Helena Ticha ,  Ladislav Tichy

发明人： Michael Camras ,  William Imler ,  Franklin Wall ,  Frank Steranka ,  Michael Krames ,  Helena Ticha ,  Ladislav Tichy

IPC分类号： H01L21/00

CPC分类号： H05B33/0857 ,  H01L25/0753 ,  H01L33/58 ,  H01L2924/0002 ,  H01L2924/00

摘要： A device is provided with at least one light emitting device (LED) die mounted on a submount with an optical element subsequently thermally bonded to the LED die. The LED die is electrically coupled to the submount through contact bumps that have a higher temperature melting point than is used to thermally bond the optical element to the LED die. In one implementation, a single optical element is bonded to a plurality of LED dice that are mounted to the submount and the submount and the optical element have approximately the same coefficients of thermal expansion. Alternatively, a number of optical elements may be used. The optical element or LED die may be covered with a coating of wavelength converting material. In one implementation, the device is tested to determine the wavelengths produced and additional layers of the wavelength converting material are added until the desired wavelengths are produced.

摘要翻译： 设备具有至少一个发光器件（LED）裸片，该发光器件（LED）裸片安装在具有随后热粘合到LED管芯上的光学元件的基座上。 LED管芯通过接触凸块电连接到副安装座，接触凸块具有比用于将光学元件热粘合到LED管芯的温度高的熔点。 在一个实现中，单个光学元件被结合到安装到基座上的多个LED芯片，并且基座和光学元件具有大致相同的热膨胀系数。 或者，可以使用多个光学元件。 光学元件或LED管芯可以用波长转换材料的涂层覆盖。 在一个实施方案中，测试该器件以确定产生的波长，并且添加波长转换材料的附加层，直到产生所需的波长。

公开(公告)号：US20060011937A1

公开(公告)日：2006-01-19

申请号：US11227814

申请日：2005-09-14

申请人： Werner Goetz ,  Michael Krames ,  Anneli Munkholm

发明人： Werner Goetz ,  Michael Krames ,  Anneli Munkholm

IPC分类号： H01L21/00 ,  H01L33/00

CPC分类号： H01L33/32 ,  H01L33/08 ,  H01L33/12 ,  H01L33/20

摘要： In a III-nitride light emitting device, a ternary or quaternary light emitting layer is configured to control the degree of phase separation. In some embodiments, the difference between the InN composition at any point in the light emitting layer and the average InN composition in the light emitting layer is less than 20%. In some embodiments, control of phase separation is accomplished by controlling the ratio of the lattice constant in a relaxed, free standing layer having the same composition as the light emitting layer to the lattice constant in a base region. For example, the ratio may be between about 1 and about 1.01.

公开(公告)号：US20050205884A1

公开(公告)日：2005-09-22

申请号：US10805424

申请日：2004-03-19

申请人： Jarnes Kim ,  John Epler ,  Nathan Gardner ,  Michael Krames ,  Jonathan Wierer

发明人： Jarnes Kim ,  John Epler ,  Nathan Gardner ,  Michael Krames ,  Jonathan Wierer

IPC分类号： G02B5/30 ,  H01L33/10 ,  H01L33/18 ,  H01L33/32 ,  H01L33/40 ,  H01L33/46 ,  H01S5/183 ,  H01S5/323 ,  H01L33/00

CPC分类号： H01L33/18 ,  H01L25/0756 ,  H01L33/105 ,  H01L33/32 ,  H01L33/405 ,  H01L33/46 ,  H01L2924/0002 ,  H01L2933/0083 ,  H01L2924/00

摘要： A semiconductor light emitting device includes an in-plane active region that emits linearly-polarized light. An in-plane active region may include, for example, a {11{overscore (2)}0} or {10{overscore (1)}0} InGaN light emitting layer. In some embodiments, a polarizer oriented to pass light of a polarization of a majority of light emitted by the active region serves as a contact. In some embodiments, two active regions emitting the same or different colored light are separated by a polarizer oriented to pass light of a polarization of a majority of light emitted by the bottom active region, and to reflect light of a polarization of a majority of light emitted by the top active region. In some embodiments, a polarizer reflects light scattered by a wavelength converting layer.

摘要翻译： 半导体发光器件包括发射线偏振光的面内有源区域。 面内有源区可以包括例如{11 {过滤（20）或{10 {超（10）InGaN发光层）。在一些实施例中，定向为使通过大部分 在一些实施例中，发射相同或不同着色光的两个有源区域被定向成通过底部有源区域发射的大部分光的偏振光的偏振器隔开，以及 以反射由顶部有源区域发射的大部分光的偏振光。在一些实施例中，偏振器反射由波长转换层散射的光。

公开(公告)号：US20210296292A1

公开(公告)日：2021-09-23

申请号：US17204687

申请日：2021-03-17

申请人： Michael Krames ,  Bardia Pezeshki ,  Robert Kalman ,  Cameron Danesh

发明人： Michael Krames ,  Bardia Pezeshki ,  Robert Kalman ,  Cameron Danesh

IPC分类号： H01L25/075 ,  H01L33/06 ,  H01L33/32 ,  H01L33/58 ,  H01L33/10 ,  H01L33/62

摘要： An LED array on a sapphire substrate may be mounted on a silicon interconnect chip, with LEDs of the array inserted into holes of waveguides on the silicon interconnect chip. The sapphire substrate and the silicon interconnect chip may both have microbumps for carrying electrical signals to or from the LEDs, and the sapphire substrate and silicon interconnect chip may be bonded together using the microbumps. The LEDs may be configured to preferentially emit light in a lateral direction, for increased coupling of light into the waveguides.

公开(公告)号：US20070072324A1

公开(公告)日：2007-03-29

申请号：US11237164

申请日：2005-09-27

申请人： Michael Krames ,  Nathan Gardner ,  John Epler

发明人： Michael Krames ,  Nathan Gardner ,  John Epler

IPC分类号： H01L21/00 ,  H01G9/20

CPC分类号： H01L21/76256 ,  C30B25/183 ,  C30B29/40 ,  C30B29/403 ,  H01L21/76254 ,  H01L33/007 ,  H01L33/0079

摘要： A substrate including a host and a seed layer bonded to the host is provided, then a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is grown on the seed layer. In some embodiments, a bonding layer bonds the host to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host may be separated from the semiconductor structure and seed layer by etching away the bonding layer.

摘要翻译： 提供了包括与主体结合的主体和种子层的基板，然后在种子层上生长包括设置在n型区域和p型区域之间的发光层的半导体结构。 在一些实施方案中，结合层将主体结合到种子层。 种子层可以比用于缓和半导体结构中的应变的临界厚度薄，使得半导体结构中的应变由种子层中形成的位错或通过在种子层和结合层之间滑动而消除， 两层。 在一些实施例中，可以通过蚀刻掉粘合层来将主体与半导体结构和种子层分离。

公开(公告)号：US20060091404A1

公开(公告)日：2006-05-04

申请号：US10977867

申请日：2004-10-29

申请人： Yu-Chen Shen ,  Michael Krames ,  Nathan Gardner

发明人： Yu-Chen Shen ,  Michael Krames ,  Nathan Gardner

IPC分类号： H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/3205 ,  H01S5/34333

摘要： A III-nitride light emitting layer in a semiconductor light emitting device has a graded composition. The composition of the light emitting layer may be graded such that the change in the composition of a first element is at least 0.2% per angstrom of light emitting layer. Grading in the light emitting layer may reduce problems associated with polarization fields in the light emitting layer. The light emitting layer may be, for example InxGa1-xN, AlxGa1-xN, or InxAlyGa1-x-yN.

摘要翻译： 半导体发光器件中的III族氮化物发光层具有渐变组成。 发光层的组成可以分级，使得第一元素的组成的变化为每发光层的至少0.2％。 在发光层中的分级可以减少与发光层中的极化场相关的问题。 发光层可以是例如在N 1 Ga 1-x N，Al x Ga 1-x N 2 > N，或在<！ - SIPO - >中。

公开(公告)号：US20060011935A1

公开(公告)日：2006-01-19

申请号：US11230722

申请日：2005-09-19

申请人： Michael Krames ,  Fred Kish ,  Tun Tan

发明人： Michael Krames ,  Fred Kish ,  Tun Tan

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/02 ,  H01L33/08 ,  H01L33/14 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/13 ,  H01L2224/05611 ,  H01L2924/00014 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/05671 ,  H01L2224/05684

摘要： A method for designing semiconductor light emitting devices is disclosed wherein the side surfaces (surfaces not parallel to the epitaxial layers) are formed at preferred angles relative to vertical (normal to the plane of the light-emitting active layer) to improve light extraction efficiency and increase total light output efficiency. Device designs are chosen to improve efficiency without resorting to excessive active area-yield loss due to shaping. As such, these designs are suitable for low-cost, high-volume manufacturing of semiconductor light-emitting devices with improved characteristics.

摘要翻译： 公开了一种用于设计半导体发光器件的方法，其中侧表面（不平行于外延层的表面）以相对于垂直（垂直于发光有源层的平面）的优选角度形成，以提高光提取效率， 提高总光输出效率。 选择器件设计以提高效率，而不需要由于成形而过度的有效面积产量损失。 因此，这些设计适用于具有改进特性的半导体发光器件的低成本，大批量制造。

公开(公告)号：US20050236641A1

公开(公告)日：2005-10-27

申请号：US10830202

申请日：2004-04-21

申请人： Werner Goetz ,  Michael Krames ,  Anneli Munkholm

发明人： Werner Goetz ,  Michael Krames ,  Anneli Munkholm

IPC分类号： H01L33/08 ,  H01L33/32 ,  H01L29/22

CPC分类号： H01L33/32 ,  H01L33/08 ,  H01L33/12

摘要： In a III-nitride light emitting device, a ternary or quaternary light emitting layer is configured to control the degree of phase separation. In some embodiments, the difference between the InN composition at any point in the light emitting layer and the average InN composition in the light emitting layer is less than 20%. In some embodiments, control of phase separation is accomplished by controlling the ratio of the lattice constant in a relaxed, free standing layer having the same composition as the light emitting layer to the lattice constant in a base region. For example, the ratio may be between about 1 and about 1.01.

摘要翻译： 在III族氮化物发光器件中，三元或四元发光层被配置为控制相分离程度。 在一些实施例中，发光层中的任何点处的InN组成与发光层中的平均InN组成之间的差小于20％。 在一些实施方案中，通过控制具有与发光层相同的组成的松弛的独立层中的晶格常数与基极区域中的晶格常数的比例来实现相分离的控制。 例如，该比率可以在约1至约1.01之间。