FERROELECTRIC TRANSISTORS TO STORE MULTIPLE STATES OF RESISTANCES FOR MEMORY CELLS

    公开(公告)号:US20200212224A1

    公开(公告)日:2020-07-02

    申请号:US16232615

    申请日:2018-12-26

    Abstract: Embodiments herein describe techniques for a semiconductor device including a gate stack with a ferroelectric-oxide layer above a channel layer and in contact with the channel layer, and a top electrode above the ferroelectric-oxide layer. The ferroelectric-oxide layer includes a domain wall between an area under a nucleation point of the top electrode and above a separation line of the channel layer between an ON state portion and an OFF state portion of the channel layer. A resistance between a source electrode and a drain electrode is modulated in a range between a first resistance value and a second resistance value, dependent on a position of the domain wall within the ferroelectric-oxide layer, a position of the ON state portion of the channel layer, and a position of the OFF state portion of the channel layer. Other embodiments may be described and/or claimed.

    POLARIZATION GATE STACK SRAM
    33.
    发明申请

    公开(公告)号:US20200118616A1

    公开(公告)日:2020-04-16

    申请号:US16732951

    申请日:2020-01-02

    Abstract: One embodiment provides an apparatus. The apparatus includes a first inverter comprising a first pull up transistor and a first pull down transistor; a second inverter cross coupled to the first inverter, the second inverter comprising a second pull up transistor and a second pull down transistor; a first access transistor coupled to the first inverter; and a second access transistor coupled to the second inverter. A gate electrode of one transistor of each inverter comprises a polarization layer.

    MAGNETIC STATE ELEMENT AND CIRCUITS
    39.
    发明申请
    MAGNETIC STATE ELEMENT AND CIRCUITS 审中-公开
    磁性元件和电路

    公开(公告)号:US20150228323A1

    公开(公告)日:2015-08-13

    申请号:US14696965

    申请日:2015-04-27

    Abstract: Described is an apparatus, for spin state element device, which comprises: a variable resistive magnetic (VRM) device to receive a magnetic control signal to adjust resistance of the VRM device; and a magnetic logic gating (MLG) device, coupled to the VRM device, to receive a magnetic logic input and perform logic operation on the magnetic logic input and to drive an output magnetic signal based on the resistance of the VRM device. Described is a magnetic de-multiplexer which comprises: a first VRM device to receive a magnetic control signal to adjust resistance of the first VRM; a second VRM device to receive the magnetic control signal to adjust resistance of the second VRM device; and an MLG device, coupled to the first and second VRM devices, the MLG device having at least two output magnets to output magnetic signals based on the resistances of the first and second VRM devices.

    Abstract translation: 描述了一种用于自旋状态元件器件的装置,其包括:可变电阻磁极(VRM)器件,用于接收磁控制信号以调节VRM器件的电阻; 以及耦合到VRM装置的磁逻辑门控(MLG)装置,以接收磁逻辑输入并对磁逻辑输入执行逻辑运算,并且基于VRM装置的电阻来驱动输出磁信号。 描述的磁解除多路复用器包括:第一VRM装置,用于接收磁控制信号以调整第一VRM的电阻; 第二VRM装置,用于接收所述磁控信号以调整所述第二VRM装置的电阻; 以及耦合到第一和第二VRM装置的MLG装置,MLG装置具有至少两个输出磁体,以基于第一和第二VRM装置的电阻输出磁信号。

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