公开(公告)号：US20100112775A1

公开(公告)日：2010-05-06

申请号：US12684570

申请日：2010-01-08

申请人： Masataka Mizukoshi ,  Kanae Nakagawa ,  Takeshi Shioga ,  Kazuaki Kurihara ,  John David Baniecki

发明人： Masataka Mizukoshi ,  Kanae Nakagawa ,  Takeshi Shioga ,  Kazuaki Kurihara ,  John David Baniecki

IPC分类号： H01L21/02 ,  H01L21/768

CPC分类号： H01L24/91 ,  H01L21/4846 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/76801 ,  H01L21/7687 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76885 ,  H01L23/5283 ,  H01L23/5389 ,  H01L24/11 ,  H01L24/19 ,  H01L24/45 ,  H01L24/48 ,  H01L24/82 ,  H01L2224/02333 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/1134 ,  H01L2224/12105 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/32145 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48132 ,  H01L2224/73267 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H05K1/162 ,  H05K1/165 ,  H05K1/167 ,  H05K3/381 ,  H05K3/4602 ,  H05K3/4661 ,  H05K2201/0209 ,  H05K2201/086 ,  H05K2201/09509 ,  H05K2203/0195 ,  H05K2203/0228 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

摘要： The plating method comprises the step of forming a resin layer 10 over a substrate 16; the step of cutting the surface part of the resin layer 10 with a cutting tool 12; the step of forming a seed layer 36 on the resin layer 10 by electroless plating; and the step of forming a plating film 44 on the seed layer 36 by electroplating. Suitable roughness can be give to the surface of the resin layer 10, whereby the adhesion between the seed layer 36 and the resin layer 10 can be sufficiently ensured. Excessively deep pores are not formed in the surface of the resin layer 10, as are by desmearing treatment, whereby a micronized pattern of a photoresist film 40 can be formed on the resin layer 10. Thus, interconnections 44, etc. can be formed over the resin layer 10 at a narrow pitch with high reliability ensured.

摘要翻译： 电镀方法包括在基板16上形成树脂层10的步骤; 用切割工具12切割树脂层10的表面部分的步骤; 通过无电解电镀在树脂层10上形成种子层36的步骤; 以及通过电镀在种子层36上形成电镀膜44的步骤。 可以赋予树脂层10的表面适当的粗糙度，由此能够充分确保种子层36与树脂层10之间的粘附性。 树脂层10的表面上也不会形成过度的深孔，如通过干燥处理，可以在树脂层10上形成光致抗蚀剂膜40的微细化图案。因此，可以形成互连44等 能够确保高可靠性的窄间距的树脂层10。

公开(公告)号：US07670940B2

公开(公告)日：2010-03-02

申请号：US11250399

申请日：2005-10-17

申请人： Masataka Mizukoshi ,  Kanae Nakagawa ,  Takeshi Shioga ,  Kazuaki Kurihara ,  John David Baniecki

发明人： Masataka Mizukoshi ,  Kanae Nakagawa ,  Takeshi Shioga ,  Kazuaki Kurihara ,  John David Baniecki

IPC分类号： H01L21/76

CPC分类号： H01L24/91 ,  H01L21/4846 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/76801 ,  H01L21/7687 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76885 ,  H01L23/5283 ,  H01L23/5389 ,  H01L24/11 ,  H01L24/19 ,  H01L24/45 ,  H01L24/48 ,  H01L24/82 ,  H01L2224/02333 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/1134 ,  H01L2224/12105 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/32145 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48132 ,  H01L2224/73267 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H05K1/162 ,  H05K1/165 ,  H05K1/167 ,  H05K3/381 ,  H05K3/4602 ,  H05K3/4661 ,  H05K2201/0209 ,  H05K2201/086 ,  H05K2201/09509 ,  H05K2203/0195 ,  H05K2203/0228 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

摘要： The plating method comprises the step of forming a resin layer 10 over a substrate 16; the step of cutting the surface part of the resin layer 10 with a cutting tool 12; the step of forming a seed layer 36 on the resin layer 10 by electroless plating; and the step of forming a plating film 44 on the seed layer 36 by electroplating. Suitable roughness can be give to the surface of the resin layer 10, whereby the adhesion between the seed layer 36 and the resin layer 10 can be sufficiently ensured. Excessively deep pores are not formed in the surface of the resin layer 10, as are by desmearing treatment, whereby a micronized pattern of a photoresist film 40 can be formed on the resin layer 10. Thus, interconnections 44, etc. can be formed over the resin layer 10 at a narrow pitch with high reliability ensured.

摘要翻译： 电镀方法包括在基板16上形成树脂层10的步骤; 用切割工具12切割树脂层10的表面部分的步骤; 通过无电解电镀在树脂层10上形成种子层36的步骤; 以及通过电镀在种子层36上形成电镀膜44的步骤。 可以赋予树脂层10的表面适当的粗糙度，由此能够充分确保种子层36与树脂层10之间的粘附性。 树脂层10的表面上也不会形成过度的深孔，如通过干燥处理，可以在树脂层10上形成光致抗蚀剂膜40的微细化图案。因此，可以形成互连44等 能够确保高可靠性的窄间距的树脂层10。

公开(公告)号：US07595581B2

公开(公告)日：2009-09-29

申请号：US11487509

申请日：2006-07-17

申请人： Tsuyoshi Aoki ,  Kazuaki Kurihara ,  Shigeyoshi Umemiya

发明人： Tsuyoshi Aoki ,  Kazuaki Kurihara ,  Shigeyoshi Umemiya

IPC分类号： H01L41/08

CPC分类号： G11B5/58 ,  G11B5/4873 ,  G11B5/6005 ,  H01L41/0805 ,  H01L41/1876 ,  H01L41/314 ,  H01L41/332

摘要： A thin-film piezoelectric device is disclosed that includes a substrate, a piezoelectric pattern disposed on the substrate, the piezoelectric pattern including plural spaced-apart piezoelectric regions, and a pair of electrodes that apply an electric field to the piezoelectric pattern.

摘要翻译： 公开了一种薄膜压电装置，其包括基板，设置在基板上的压电图案，包括多个间隔开的压电区域的压电图案，以及向压电图案施加电场的一对电极。

公开(公告)号：US20080315358A1

公开(公告)日：2008-12-25

申请号：US12222764

申请日：2008-08-15

申请人： Takeshi Shioga ,  John David Baniecki ,  Kazuaki Kurihara

发明人： Takeshi Shioga ,  John David Baniecki ,  Kazuaki Kurihara

IPC分类号： H01L29/00 ,  H01G4/06

CPC分类号： H01L28/55 ,  H01G4/33 ,  H01L24/73 ,  H01L27/0805 ,  H01L28/65 ,  H01L28/75 ,  H01L2224/16225 ,  H01L2224/16265 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/12044 ,  H01L2924/1515 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19103 ,  H01L2924/19104 ,  H01L2924/30107 ,  H01L2924/3011 ,  Y10S257/924 ,  Y10S438/957 ,  Y10T29/435 ,  H01L2924/00012 ,  H01L2924/00

摘要： A capacitive element is characterized by including: a base (12); a lower barrier layer (13) formed on the base (12); capacitors (Q1 and Q2) made by forming a lower electrode (14a), capacitor dielectric layers (15a), and upper electrodes (16a) in this order on the lower barrier layer (13); and an upper barrier layer (20) covering at least the capacitor dielectric layers (15a) and the lower barrier layer (13).

摘要翻译： 电容元件的特征在于包括：基座（12）; 形成在所述基座（12）上的下阻挡层（13）; 在下阻挡层（13）上依次形成下电极（14a），电容电介质层（15a）和上电极（16a）制成的电容器（Q1和Q2）; 和覆盖至少所述电容器电介质层（15a）和所述下阻挡层（13）的上阻挡层（20）。

公开(公告)号：US20080305607A1

公开(公告)日：2008-12-11

申请号：US12219577

申请日：2008-07-24

申请人： John David Baniecki ,  Takeshi Shioga ,  Kazuaki Kurihara

发明人： John David Baniecki ,  Takeshi Shioga ,  Kazuaki Kurihara

IPC分类号： H01L21/20

CPC分类号： H01L21/02197 ,  H01G4/085 ,  H01G4/1227 ,  H01G4/33 ,  H01L21/02186 ,  H01L21/02266 ,  H01L21/02304 ,  H01L21/02337 ,  H01L21/31691 ,  H01L27/10852 ,  H01L27/11507 ,  H01L28/55

摘要： A thin film capacitor comprising a top electrode, a bottom electrode, and a dielectric film held between the top and bottom electrodes. The dielectric film is composed of at least cations Ba, Sr, and Ti and anion O. The concentration of Sr, Ti, and O ions are uniform along the growth direction of the dielectric film while the concentration of the Ba cation is non-uniform along the growth direction such that a reduced Ba-I region in which the average concentration of perovskite type Ba cations (Ba-I) is less than the average concentration of non-perovskite type Ba cations (Ba-II) exists at or near the boundary between at least one of the top and bottom electrodes, with ratio R=(atm % Ba-I)/[(atm % Ba-I)+(atm % Ba-II)] within a range of 0.1

摘要翻译： 一种薄膜电容器，包括保持在顶部和底部电极之间的顶部电极，底部电极和电介质膜。 电介质膜至少由阳离子Ba，Sr，Ti和阴离子O组成。Sr，Ti和O离子的浓度沿着电介质膜的生长方向是均匀的，而Ba阳离子的浓度是不均匀的 沿着生长方向，使得其中钙钛矿型Ba阳离子（Ba-I）的平均浓度小于非钙钛矿型Ba阳离子（Ba-II）的平均浓度的还原Ba-I区域存在于或接近 比例R =（atm％Ba-I）/ [（atm％Ba-I）+（atm％Ba-II）]在顶部和底部电极中的至少一个之间的边界在0.1

公开(公告)号：US20080217706A1

公开(公告)日：2008-09-11

申请号：US12122424

申请日：2008-05-16

申请人： Kouichi MURAOKA ,  Kazuaki Kurihara

发明人： Kouichi MURAOKA ,  Kazuaki Kurihara

IPC分类号： H01L29/78

CPC分类号： H01L21/28185 ,  H01L21/28167 ,  H01L21/28176 ,  H01L21/28194 ,  H01L21/28202 ,  H01L29/511 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： There is provided a method of manufacturing a semiconductor device, including forming a structure including a first layer containing Si and a metal oxide layer in contact with the first layer, the metal oxide layer having a dielectric constant higher than that of silicon oxide, and heating the structure in an atmosphere containing He and/or Ne.

摘要翻译： 提供一种制造半导体器件的方法，包括形成包括含有Si的第一层和与第一层接触的金属氧化物层的结构，金属氧化物层的介电常数高于氧化硅的介电常数，以及加热 在包含He和/或Ne的气氛中的结构。

公开(公告)号：US07335701B2

公开(公告)日：2008-02-26

申请号：US11476179

申请日：2006-06-27

申请人： Keiji Watanabe ,  Hiroshi Chiba ,  Eishin Yamakawa ,  Tsukasa Itani ,  Norikazu Nakamura ,  Shoichi Suda ,  Masayuki Takeda ,  Kazuaki Kurihara

发明人： Keiji Watanabe ,  Hiroshi Chiba ,  Eishin Yamakawa ,  Tsukasa Itani ,  Norikazu Nakamura ,  Shoichi Suda ,  Masayuki Takeda ,  Kazuaki Kurihara

IPC分类号： C08F8/00

CPC分类号： C23C14/024 ,  C23C14/0605 ,  G11B5/725 ,  G11B5/8408 ,  Y10T428/1164

摘要： A magnetic disk is produced with improved yield by forming a DLC protective film by a d.c. magnetron sputtering process conducted in a sputtering atmosphere containing oxygen. The magnetic disk carries a lubricating film on the DLC film wherein a fluorocarbon resin constituting the lubricating film contains photocrosslinking groups. A lubricating film having non-polar end groups is also disclosed.

摘要翻译： 通过直流形成DLC保护膜来制造磁盘，产率提高。 磁控溅射工艺在含氧气体的溅射气氛中进行。 磁盘在DLC膜上携带润滑膜，其中构成润滑膜的碳氟树脂含有光交联基团。 还公开了具有非极性端基的润滑膜。

公开(公告)号：US20070232017A1

公开(公告)日：2007-10-04

申请号：US11582480

申请日：2006-10-18

申请人： John David Baniecki ,  Takeshi Shioga ,  Kazuaki Kurihara

发明人： John David Baniecki ,  Takeshi Shioga ,  Kazuaki Kurihara

IPC分类号： H01L21/20

CPC分类号： H01L21/02197 ,  H01G4/085 ,  H01G4/1227 ,  H01G4/33 ,  H01L21/02186 ,  H01L21/02266 ,  H01L21/02304 ,  H01L21/02337 ,  H01L21/31691 ,  H01L27/10852 ,  H01L27/11507 ,  H01L28/55

摘要： A thin film capacitor comprising a top electrode, a bottom electrode, and a dielectric film held between the top and bottom electrodes. The dielectric film is composed of at least cations Ba, Sr, and Ti and anion O. The concentration of Sr, Ti, and O ions are uniform along the growth direction of the dielectric film while the concentration of the Ba cation is non-uniform along the growth direction such that a reduced Ba-I region in which the average concentration of perovskite type Ba cations (Ba-I) is less than the average concentration of non-perovskite type Ba cations (Ba-II) exists at or near the boundary between at least one of the top and bottom electrodes, with ratio R=(atm % Ba-I)/[(atm % Ba-I)+(atm % Ba-II)] within a range of 0.1

摘要翻译： 一种薄膜电容器，包括保持在顶部和底部电极之间的顶部电极，底部电极和电介质膜。 电介质膜至少由阳离子Ba，Sr，Ti和阴离子O组成。Sr，Ti和O离子的浓度沿着电介质膜的生长方向是均匀的，而Ba阳离子的浓度是不均匀的 沿着生长方向，使得其中钙钛矿型Ba阳离子（Ba-I）的平均浓度小于非钙钛矿型Ba阳离子（Ba-II）的平均浓度的还原Ba-I区域存在于或接近 比例R =（atm％Ba-I）/ [（atm％Ba-I）+（atm％Ba-II）]在顶部和底部电极中的至少一个之间的边界在0.1

公开(公告)号：US20070205486A1

公开(公告)日：2007-09-06

申请号：US11531446

申请日：2006-09-13

申请人： Takeshi SHIOGA ,  Kazuaki Kurihara

发明人： Takeshi SHIOGA ,  Kazuaki Kurihara

IPC分类号： H01L21/20

CPC分类号： H01L28/55 ,  H01L21/76898 ,  H01L23/50 ,  H01L27/016 ,  H01L27/0288 ,  H01L28/57 ,  H01L28/65 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/16265 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/19103 ,  H01L2924/00 ,  H01L2224/05599

摘要： A thin film capacitor device of the present invention has a thin film capacitor having two electrodes and a dielectric layer provided therebetween and external terminals electrically connected to the electrodes. In addition, the thin film capacitor device also has resistor layers which are provided between the external terminals and the electrodes and adjacent thereto, and which are formed of a material have a higher resistivity than that of the adjacent electrodes.

摘要翻译： 本发明的薄膜电容器器件具有薄膜电容器，该薄膜电容器具有两个电极和介于其间的电介质层，外部端子与电极电连接。 此外，薄膜电容器装置还具有设置在外部端子和电极之间并且与其相邻的电阻层，并且由电阻形成的材料具有比相邻电极的电阻率更高的电阻率。

公开(公告)号：US20070147985A1

公开(公告)日：2007-06-28

申请号：US11566428

申请日：2006-12-04

申请人： Toshio Takahashi ,  Yutaka Hirata ,  Kazuo Kobayashi ,  Kazuaki Kurihara ,  Kentaro Oda

发明人： Toshio Takahashi ,  Yutaka Hirata ,  Kazuo Kobayashi ,  Kazuaki Kurihara ,  Kentaro Oda

IPC分类号： F01D3/04

CPC分类号： F04D29/059 ,  F04D17/12 ,  F04D25/16 ,  F25B1/053 ,  F25B1/10 ,  F25B2400/13 ,  F25B2400/23

摘要： A first centrifugal impeller and a second centrifugal impeller are arranged in such an orientation that back sides of the first centrifugal impeller and the second centrifugal impeller face to each other. Bearings are cylindrical roller bearings and a thrust bearing. The cylindrical roller bearings are arranged at two axially spaced supporting positions respectively, and support a radial load applied to the rotating shaft. The thrust bearing supports a thrust load applied to the rotating shaft.

摘要翻译： 以第一离心式叶轮和第二离心式叶轮的背面彼此面对的方式配置第一离心式叶轮和第二离心式叶轮。 轴承是圆柱滚子轴承和推力轴承。 圆柱滚子轴承分别布置在两个轴向间隔的支撑位置，并且支撑施加到旋转轴的径向载荷。 推力轴承支承施加在旋转轴上的推力。