公开(公告)号：US06696711B2

公开(公告)日：2004-02-24

申请号：US10120505

申请日：2002-04-12

申请人： Kazuhiro Mochizuki ,  Tohru Oka ,  Isao Ohbu ,  Kiichi Yamashita

发明人： Kazuhiro Mochizuki ,  Tohru Oka ,  Isao Ohbu ,  Kiichi Yamashita

IPC分类号： H01L310328

CPC分类号： H01L21/8252 ,  H01L27/0605 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/1423 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/16152 ,  H01L2924/19041 ,  H01L2924/30107 ,  H03F1/302 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor device comprising a plurality of heterojunction bipolar transistors with their base layer made of GaAsSb or InGaAs, a GaAs substrate, and a buffer layer placed between the base layer and the substrate is fabricated. The substrate and the buffer layer that lie directly under the intrinsic regions of a part or all of the plurality of heterojunction bipolar transistors are removed. Thereby, a semiconductor device using HBTs that can operate with a power supply voltage of 2 V or below can be provided at reduced cost as a well-reliable product, and a power amplifier with high power conversion efficiency can be provided.

摘要翻译： 制造包括多个异质结双极晶体管的半导体器件，其基底层由GaAsSb或InGaAs制成，GaAs衬底以及位于基底层和衬底之间的缓冲层。 去除位于多个异质结双极晶体管的一部分或全部的本征区域正下方的衬底和缓冲层。 由此，作为可靠性良好的产品，可以以降低的成本提供能够以2V以下的电源电压工作的HBT的半导体装置，能够提供高功率转换效率的功率放大器。

公开(公告)号：US6146488A

公开(公告)日：2000-11-14

申请号：US954966

申请日：1997-10-21

申请人： Toshiya Okada ,  Tomiharu Okita ,  Yasuhiro Okuri ,  Kiichi Yamashita

发明人： Toshiya Okada ,  Tomiharu Okita ,  Yasuhiro Okuri ,  Kiichi Yamashita

IPC分类号： B23K11/10 ,  B23K11/34 ,  C08L63/00 ,  C09J5/06 ,  B32B31/00

CPC分类号： C09J5/06 ,  B23K11/10 ,  B23K11/34 ,  C08L63/00 ,  C09J2400/163 ,  C09J2463/00

摘要： The present invention is a weld bonding method providing adhesion by both an adhesive and resistance spot welding, and includes application of an adhesive including a thermosetting epoxy resin, a latent curing agent and 1 to 15 vol % of one or more additives selected from the group consisting of conductive metals, metal oxides, metal carbides, metal nitrides, metal borides, and metal silicides, which are in the from of powder having a particle size of 10 .mu.m or less, or in the form of fragments or flakes having a thickness of 0.5 .mu.m or more and a size of 30 .mu.m or less.

摘要翻译： 本发明是通过粘合剂和电阻点焊两者提供粘合的焊接方法，包括使用包含热固性环氧树脂，潜在性固化剂和1〜15体积％的一种或多种添加剂的粘合剂的应用，所述添加剂选自 由来自具有10μm或更小的粒度的粉末的导电金属，金属氧化物，金属碳化物，金属氮化物，金属硼化物和金属硅化物组成，或者具有厚度的片状或薄片形式 为0.5μm以上，尺寸为30μm以下。

公开(公告)号：US5144467A

公开(公告)日：1992-09-01

申请号：US557721

申请日：1990-07-25

申请人： Shigeki Kitajima ,  Kiichi Yamashita ,  Shinya Sasaki ,  Hideaki Tsushima

发明人： Shigeki Kitajima ,  Kiichi Yamashita ,  Shinya Sasaki ,  Hideaki Tsushima

IPC分类号： G02F2/00 ,  G02F2/02 ,  H04B10/07 ,  H04B10/516 ,  H04B10/54 ,  H04B10/548 ,  H04B10/564 ,  H04B10/572 ,  H04B10/61 ,  H04J14/00 ,  H04J14/02

CPC分类号： H04B10/60 ,  H04B10/64 ,  H04J14/02

摘要： An optical tuning device including a channel designator and an intermediate frequency stabilizer for stabilizing the frequency of a difference signal corresponding to the frequency difference between a transmitted optical signal and a local oscillation optical signal. The channel designator includes a bias control circuit for continuously changing the optical frequency of a local oscillation light source up to a frequency corresponding to a target channel, a channel detection circuit for detecting channel passage on the basis of the difference signal, and a channel counting circuit for storing therein the selected channel and the target channel, detecting the direction of the target channel, counting the number of channel passage times, and detecting arrival at the target channel.

摘要翻译： 一种光调谐装置，包括通道指示器和中频稳定器，用于稳定对应于所发射的光信号和本地振荡光信号之间的频差的差信号的频率。 通道指示器包括用于连续地将本地振荡光源的光频率改变到对应于目标通道的频率的偏置控制电路，用于基于差分信号检测通道通道的通道检测电路，以及通道计数 用于在其中存储所选择的信道和目标信道的电路，检测目标信道的方向，计数信道通过时间的数量，以及检测目标信道的到达。

公开(公告)号：US4968904A

公开(公告)日：1990-11-06

申请号：US323947

申请日：1989-03-15

申请人： Kiichi Yamashita ,  Keiichi Kitamura ,  Nobuo Kotera ,  Yasushi Hatta ,  Hiroyuki Tanaka

发明人： Kiichi Yamashita ,  Keiichi Kitamura ,  Nobuo Kotera ,  Yasushi Hatta ,  Hiroyuki Tanaka

IPC分类号： H03K19/0952 ,  H01L27/095 ,  H03K19/003 ,  H03K19/094

CPC分类号： H03K19/00384 ,  H03K19/09436

摘要： A logic circuit made up of FET's is disclosed in which an output interface circuit is formed of a source follower circuit including a signal transmitting FET and a constant-current supplying FET, and a ratio of the gate width of the signal transmitting FET to the gate width of the constant-current supplying FET is set so that the high and low levels of the output signal of the logic circuit are independent of the threshold voltage of the FET's.

摘要翻译： 公开了一种由FET构成的逻辑电路，其中输出接口电路由包括信号发送FET和恒流供应FET的源极跟随器电路以及信号发送FET的栅极宽度与栅极的比率 设定恒流供给FET的宽度，使得逻辑电路的输出信号的高电平和低电平独立于FET的阈值电压。

公开(公告)号：US4857769A

公开(公告)日：1989-08-15

申请号：US143385

申请日：1988-01-13

申请人： Nobuo Kotera ,  Kiichi Yamashita ,  Taizo Kinoshita ,  Hirotoshi Tanaka ,  Satoshi Tanaka ,  Minoru Nagata

发明人： Nobuo Kotera ,  Kiichi Yamashita ,  Taizo Kinoshita ,  Hirotoshi Tanaka ,  Satoshi Tanaka ,  Minoru Nagata

IPC分类号： H03K19/003

CPC分类号： H03K19/00384

摘要： This invention relates to a threshold voltage detection circuit for detecting the threshold voltage of field effect transistors (FETs) and to a semiconductor circuit capable of a stable operation irrespective of the fluctuation of the threshold voltage by utilizing this threshold voltage detection circuit. The source-drain path of first FET is connected in series with that of second FET having substantially the same threshold voltage as that of the first FET and the conductances of these first and second FETs are set to a predetermined ratio to generate a voltage drop associated with the threshold voltage in the first FET. This voltage drop can be used for detecting the threshold voltage and for level-shifting. The output of the series connection of the first and second FETs is applied to the gate of a constant current FET having the same threshold voltage as that of the first and second FETs and the drain current of the constant current FET can thus be set irrespective of the fluctuation of the threshold voltage.

摘要翻译： 本发明涉及一种阈值电压检测电路，用于通过利用该阈值电压检测电路来检测场效应晶体管（FET）的阈值电压和能够稳定工作的半导体电路，而与阈值电压的波动无关。 第一FET的源极 - 漏极路径与具有与第一FET基本相同的阈值电压的第二FET的源极 - 漏极路径串联连接，并且将这些第一和第二FET的电导设置为预定的比率以产生相关的电压降 与第一FET中的阈值电压。 该电压降可用于检测阈值电压和电平转换。 第一和第二FET的串联连接的输出被施加到具有与第一和第二FET相同的阈值电压的恒流FET的栅极，因此可以设定恒定电流FET的漏极电流，而不管 阈值电压的波动。

公开(公告)号：US4806803A

公开(公告)日：1989-02-21

申请号：US867552

申请日：1986-05-28

申请人： Kiichi Yamashita

发明人： Kiichi Yamashita

IPC分类号： H03K17/687 ,  H03K5/00 ,  H03K5/08 ,  H03K5/22

CPC分类号： H03K17/687 ,  H03K17/6874

摘要： A current switching circuit enabling current switching at a speed of several gigabits per second (Gbit/sec) or several giga Hertz (GHz) in analog integrated circuits and digital integrated circuits using GaAs FETs is so constructed that the current switching is effected by a pair of diodes, whose cathodes are connected in common and which are driven by a GaAs FET circuit (source follower circuit). This current switching circuit includes first and second FETs, each of which has a source, a drain and a gate. First and second input signals are connected to the gates of the first and the second FETs, respectively. First and second diodes are provided with anodes connected with the sources of the first and the second FETs, respectively. A constant current source is connected in common with the cathodes of the first and the second diodes, and a load circuit is connected with the drain of at least one of the first and the second FETs. By virtue of this arrangement, current flowing through the load circuit is switched, depending on the first and the second input signals, with an output signal being taken out from each load circuit.

摘要翻译： 以模拟集成电路和使用GaAs FET的数字集成电路，以每秒几吉比特（Gbit / sec）或几千兆赫兹（GHz）的速度进行电流切换的电流切换电路被构造成使得电流切换由一对 的二极管，其阴极共同连接，并由GaAs FET电路（源极跟随器电路）驱动。 该电流切换电路包括第一和第二FET，每个具有源极，漏极和栅极。 第一和第二输入信号分别连接到第一和第二FET的栅极。 第一和第二二极管分别设置有与第一和第二FET的源极连接的阳极。 恒流源与第一和第二二极管的阴极共同连接，并且负载电路与第一和第二FET中的至少一个的漏极连接。 通过这种布置，根据第一和第二输入信号，从每个负载电路取出输出信号，切换流过负载电路的电流。

公开(公告)号：US4614324A

公开(公告)日：1986-09-30

申请号：US606208

申请日：1984-05-02

申请人： Kiichi Yamashita ,  Junpei Tanizawa ,  Takao Iwasaki

发明人： Kiichi Yamashita ,  Junpei Tanizawa ,  Takao Iwasaki

IPC分类号： B28B21/76 ,  B28B7/00 ,  B28B7/24 ,  B28B21/74 ,  B28B21/82 ,  B28B21/86 ,  B28B21/88

CPC分类号： B28B7/24 ,  B28B21/74 ,  B28B21/76 ,  B28B21/86 ,  B28B7/0029

摘要： A mold is provided for use in the production of concrete pipe sections. The mold has an inner mold part including an arch-shaped mold member; a pair of substantially L-shaped side mold members each flexibly connected to an adjacent end of the arch-shaped mold member and extending along the side portions of the mold and with parts extending inwardly across the bottom portion of the mold, and a separable mold member detachably connected between the inwardly extending parts of the L-shaped side mold members. The parting of the mold from the product is accomplished by removing the separable mold member, and urging the L-shaped side mold members inwardly. Provided also is a mold for use in the production of mitred concrete pipe sections comprising an upper inclined pipe and a lower inclined pipe which are connected to each other at their mitred surfaces. A mold is also provided for producing concrete pipe elbows having partition plates adapted to produce elbows of various arcuate sizes.

摘要翻译： 提供一种用于生产混凝土管段的模具。 模具具有包括拱形模具构件的内部模具部件; 一对大致L形的侧模构件，每个柔性地连接到拱形模具构件的相邻端并且沿着模具的侧部延伸并且具有穿过模具的底部向内延伸的部分，以及可分离的模具 构件可拆卸地连接在L形侧模构件的向内延伸部分之间。 通过移除可分离的模具构件并向内推动L形侧模具来实现模具从产品分离。 还提供了一种用于生产混凝土管段的模具，其包括在其偏斜表面处彼此连接的上倾斜管和下倾斜管。 还提供一种用于生产具有适于产生各种弓形尺寸的弯头的隔板的混凝土管弯头的模具。

公开(公告)号：US20090161329A1

公开(公告)日：2009-06-25

申请号：US12394421

申请日：2009-02-27

申请人： Iwamichi Kohjiro ,  Yasuhiro Nunogawa ,  Sakae Kikuchi ,  Shizuo Kondo ,  Tetsuaki Adachi ,  Osamu Kagaya ,  Kenji Sekine ,  Eiichi Hase ,  Kiichi Yamashita

发明人： Iwamichi Kohjiro ,  Yasuhiro Nunogawa ,  Sakae Kikuchi ,  Shizuo Kondo ,  Tetsuaki Adachi ,  Osamu Kagaya ,  Kenji Sekine ,  Eiichi Hase ,  Kiichi Yamashita

IPC分类号： H01L23/66

CPC分类号： H01L25/16 ,  H01L23/49844 ,  H01L23/552 ,  H01L23/645 ,  H01L23/66 ,  H01L24/06 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6611 ,  H01L2223/6644 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48799 ,  H01L2224/49113 ,  H01L2224/49175 ,  H01L2224/49433 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/09701 ,  H01L2924/10161 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/3025 ,  H03F1/56 ,  H03F3/195 ,  H03F3/213 ,  H03F3/604 ,  H03F2200/12 ,  H03F2200/168 ,  H03F2200/222 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/408 ,  H03F2200/451 ,  H03H7/383 ,  H01L2924/00 ,  H01L2224/45099

摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

摘要翻译： 在诸如高频功率放大器模块的半导体器件中，在安装在布线基板的主表面上的半导体芯片上形成多个放大装置，并且半导体芯片的电极通过导线电连接到电极 的布线基板。 为了使高频功率放大器模块尺寸变小，将电连接到固定基准电位的导线的基板侧接合电极位于距离半导体芯片的一侧更靠近基板侧接合电极的位置， 电连接到输出线。 电连接到输入线的基板侧输入电极位于距离半导体芯片侧的距离大约等于从半导体芯片的侧面到基板侧输出电极的距离处，或者位于距离半导体芯片 半导体芯片的侧面比基板侧接合电极为止。

公开(公告)号：US20070001300A1

公开(公告)日：2007-01-04

申请号：US11451579

申请日：2006-06-13

申请人： Iwamichi Kohjiro ,  Yasuhiro Nunogawa ,  Sakae Kikuchi ,  Shizuo Kondo ,  Tetsuaki Adachi ,  Osamu Kagaya ,  Kenji Sekine ,  Eiichi Hase ,  Kiichi Yamashita

发明人： Iwamichi Kohjiro ,  Yasuhiro Nunogawa ,  Sakae Kikuchi ,  Shizuo Kondo ,  Tetsuaki Adachi ,  Osamu Kagaya ,  Kenji Sekine ,  Eiichi Hase ,  Kiichi Yamashita

IPC分类号： H01L23/34

CPC分类号： H01L24/06 ,  H01L23/04 ,  H01L23/49805 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/49844 ,  H01L23/552 ,  H01L23/645 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L25/16 ,  H01L2223/6611 ,  H01L2223/6627 ,  H01L2223/6644 ,  H01L2223/6655 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/45139 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/45669 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/484 ,  H01L2224/48799 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/4912 ,  H01L2224/49175 ,  H01L2224/49433 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/09701 ,  H01L2924/10161 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15173 ,  H01L2924/15313 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/19032 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H03F1/56 ,  H03F3/195 ,  H03F3/213 ,  H03F3/604 ,  H03F2200/12 ,  H03F2200/168 ,  H03F2200/222 ,  H03F2200/255 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/408 ,  H03F2200/411 ,  H03F2200/423 ,  H03F2200/451 ,  H03F2200/543 ,  H03H7/383 ,  H05K1/0243 ,  H05K1/0298 ,  H05K1/183 ,  H05K3/403 ,  H01L2924/05432 ,  H01L2924/2065 ,  H01L2224/45099 ,  H01L2924/00

摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

摘要翻译： 在诸如高频功率放大器模块的半导体器件中，在安装在布线基板的主表面上的半导体芯片上形成多个放大装置，并且半导体芯片的电极通过导线电连接到电极 的布线基板。 为了使高频功率放大器模块尺寸变小，将电连接到固定基准电位的导线的基板侧接合电极位于距离半导体芯片的一侧更靠近基板侧接合电极的位置， 电连接到输出线。 电连接到输入线的基板侧输入电极位于距离半导体芯片侧的距离大约等于从半导体芯片的侧面到基板侧输出电极的距离处，或者位于距离半导体芯片 半导体芯片的侧面比基板侧接合电极为止。

公开(公告)号：US20060028277A1

公开(公告)日：2006-02-09

申请号：US11247185

申请日：2005-10-12

申请人： Kiichi Yamashita ,  Tomonori Tanoue ,  Shizuo Kondo

发明人： Kiichi Yamashita ,  Tomonori Tanoue ,  Shizuo Kondo

IPC分类号： H03G3/10

CPC分类号： H03F1/02 ,  H03F1/30 ,  H03F3/21 ,  H03G7/001 ,  H03G7/06

摘要： The present invention provides a power amplifier module featuring that: its output power characteristic smoothly changes as the input control Voltage changes; and its control sensitivity is stable over a wide dynamic range. By same means, idling current for gain setting is supplied to a single amplifier element or all of multiple stages of amplifier elements of the power amplifier module. By making this idling current behave so as to exponentially change, relative to input control voltage, the invention enables output power control proportional to the input control voltage.

摘要翻译： 本发明提供了一种功率放大器模块，其特征在于：其输出功率特性随着输入控制电压的变化而平滑地变化; 其控制灵敏度在宽动态范围内稳定。 通过同样的方式，用于增益设定的空载电流被提供给功率放大器模块的单个放大器元件或放大器元件的多个级的全部。 通过使该怠速电流相对于输入控制电压发生指数变化，本发明实现与输入控制电压成比例的输出功率控制。