摘要:
A module incorporating a capacitor, the module including a circuit board and a layer incorporating a capacitor, wherein the circuit board includes a wiring layer and a via contact for providing electrical conductivity to a cathode and an anode of the capacitor. The layer incorporating the capacitor includes a ferromagnetic layer integrated with at least a portion of a surface of the capacitor, and in the circuit board or the layer incorporating the capacitor, a coil is wound around the capacitor, or an inductor component is disposed in parallel with the capacitor. Accordingly, a module incorporating a capacitor in which miniaturization, a higher density and a reduced thickness have been achieved, as well as a method for producing the module and a capacitor used for the module, are provided.
摘要:
A thermally conductive substrate includes a thermally conductive resin sheet member attached to a lead frame. The lead frame comprises a thermally conductive resin sheet member and it is integrated with the thermally conductive resin sheet member on the lead frame. The thermally conductive resin sheet member is formed from a thermosetting resin mixture which comprises 70 to 90 parts by weight of an inorganic filler and 5 to 30 parts by weight of a thermosetting resin composition including a thermosetting resin, and the thermosetting resin is in a semi-cured state.
摘要:
A semiconductor module includes a circuit substrate composed of a wiring pattern, an electrical insulating layer and a thermal radiation board, and in use is fixed to an external thermal radiation member, in which the electrical insulating layer is composed of a thermal conductive mixture containing 70-95 wt % of an inorganic filler and 5-30 wt % of a thermosetting resin. A warping degree of the circuit substrate with respect to the external thermal radiation member is at most 1/500 of a length of the substrate, and the circuit substrate warps to protrude toward the thermal radiation board as the temperature rises. Accordingly, the thermal radiation property does not deteriorate even when the temperature rises in use. At a time of fixing the circuit substrate to the external thermal radiation member, the thermal resistance is kept to be a sufficiently low level. The thermal resistance is kept in a low level without sacrificing the contact between a module and the external thermal radiation member even at a high temperature during an operation of the device or the like, and the thermal conductive substrate is resistant to fractures or cracks and thus is highly reliable.
摘要:
A sheet-like thermally conductive resin composition containing 70 to 95 wt. % inorganic filler and 5 to 30 wt. % thermosetting resin composition, a lead frame as a wiring pattern, and an electrically conductive heat sink with a metal pole placed therein are superposed, heated and compressed, and thus are combined to form one body. Consequently, a thermally conductive circuit board with a flat surface is obtained in which a grounding pattern is grounded to the heat sink inside the insulating layer. Thus, the grounding pattern and the heat sink can be connected electrically with each other in an arbitrary position inside the insulating layer of the thermally conductive circuit board. Accordingly, there are provided a thermally conductive circuit board with high heat dissipation, high conductivity and high ground-connection reliability, a method of manufacturing the same, and a power module allowing its size to be reduced and its density to be increased.
摘要:
A sheet-like thermally conductive resin composition containing 70 to 95 wt. % inorganic filler and 5 to 30 wt. % thermosetting resin composition, a lead frame as a wiring pattern, and an electrically conductive heat sink with a metal pole placed therein are superposed, heated and compressed, and thus are combined to form one body. Consequently, a thermally conductive circuit board with a flat surface is obtained in which a grounding pattern is grounded to the heat sink inside the insulating layer. Thus, the grounding pattern and the heat sink can be connected electrically with each other in an arbitrary position inside the insulating layer of the thermally conductive circuit board. Accordingly, there are provided a thermally conductive circuit board with high heat dissipation, high conductivity and high ground-connection reliability, a method of manufacturing the same, and a power module allowing its size to be reduced and its density to be increased.
摘要:
There is provided a flexible semiconductor device. The flexible semiconductor device of the present invention comprising a support layer, a semiconductor structure portion formed on the support layer, and a resin film formed on the semiconductor structure portion. The resin film comprises an opening formed by a laser irradiation therein, and also an electroconductive member which is in contact with the surface of the semiconductor structure portion is disposed within the opening of the resin film.
摘要:
There is provided a method for manufacturing a flexible semiconductor device. The method of the present invention comprises the steps of: (a) preparing a metal foil having a concave portion; (b) forming a gate insulating film on a bottom face of the concave portion of the metal foil; (c) forming a semiconductor layer above the bottom face of the concave portion via the gate insulating film while making use of the concave portion as a bank member; and (d) forming a source electrode and a drain electrode such that they make contact with the semiconductor layer.
摘要:
Disclosed are a flexible semiconductor device and manufacturing method therefor whereby the capacitances of capacitor parts of semiconductor elements and the like can be increased while decreasing parasitic capacitances that arise between multilevel interconnections. The disclosed flexible semiconductor device is provided with an insulating film on which a semiconductor element is formed. The top and bottom surfaces of the insulating film have a top wiring pattern layer and a bottom wiring pattern layer, respectively. The semiconductor element comprises: a semiconductor layer formed on the top surface of the insulating film; a source electrode and a drain electrode formed on the top surface of the insulating film so as to contact the semiconductor layer; and a gate electrode formed on the bottom surface of the insulating film so as to be opposite the semiconductor layer. A first thickness, which is the thickness of the insulting film facing the source electrode, the drain electrode, the top wiring pattern layer, and the bottom wiring pattern layer, is greater than a second thickness, which is the thickness of the insulating film between the gate electrode and the semiconductor layer.
摘要:
There is provided a flexible semiconductor device. The flexible semiconductor device of the present invention comprising a support layer, a semiconductor structure portion formed on the support layer, and a resin film formed on the semiconductor structure portion. The resin film comprises an opening formed by a laser irradiation therein, and also an electroconductive member which is in contact with the surface of the semiconductor structure portion is disposed within the opening of the resin film.
摘要:
A method for fabricating a flexible semiconductor device includes: preparing a layered film 80 including a first metal layer 10, an inorganic insulating layer 20, a semiconductor layer 30, and a second metal layer 40 which are sequentially formed; etching the first metal layer 10 to form a gate electrode 12g; compression bonding a resin layer 50 to a surface of the layered film 80 provided with the gate electrode 12g to allow the gate electrode 12g to be embedded in the resin layer 50; and etching the second metal layer 40 to form a source electrode 42s and a drain electrode 42d, wherein the inorganic insulating layer 20 on the gate electrode 12g functions as a gate insulating film 22, and the semiconductor layer 30 between the source electrode 42s and drain electrode 42d on the inorganic insulating layer 20 functions as a channel 32.