Module incorporating a capacitor, method for manufacturing the same, and capacitor used therefor
    31.
    发明授权
    Module incorporating a capacitor, method for manufacturing the same, and capacitor used therefor 有权
    包含电容器的模块及其制造方法以及用于其的电容器

    公开(公告)号:US07319599B2

    公开(公告)日:2008-01-15

    申请号:US10944311

    申请日:2004-09-17

    IPC分类号: H05K1/18

    摘要: A module incorporating a capacitor, the module including a circuit board and a layer incorporating a capacitor, wherein the circuit board includes a wiring layer and a via contact for providing electrical conductivity to a cathode and an anode of the capacitor. The layer incorporating the capacitor includes a ferromagnetic layer integrated with at least a portion of a surface of the capacitor, and in the circuit board or the layer incorporating the capacitor, a coil is wound around the capacitor, or an inductor component is disposed in parallel with the capacitor. Accordingly, a module incorporating a capacitor in which miniaturization, a higher density and a reduced thickness have been achieved, as well as a method for producing the module and a capacitor used for the module, are provided.

    摘要翻译: 一种包含电容器的模块,所述模块包括电路板和包含电容器的层,其中所述电路板包括用于向所述电容器的阴极和阳极提供导电性的布线层和通孔接触。 包含电容器的层包括与电容器的表面的至少一部分集成的铁磁层,并且在电路板或包含电容器的层中,线圈缠绕在电容器周围,或者电感器部件并联设置 与电容器。 因此,提供了一种包括其中实现了小型化,更高密度和更小厚度的电容器的模块以及用于该模块的模块和电容器的制造方法。

    Thermal conductive substrate and semiconductor module using the same
    33.
    发明授权
    Thermal conductive substrate and semiconductor module using the same 失效
    导热基板和使用其的半导体模块

    公开(公告)号:US06958535B2

    公开(公告)日:2005-10-25

    申请号:US09956208

    申请日:2001-09-18

    摘要: A semiconductor module includes a circuit substrate composed of a wiring pattern, an electrical insulating layer and a thermal radiation board, and in use is fixed to an external thermal radiation member, in which the electrical insulating layer is composed of a thermal conductive mixture containing 70-95 wt % of an inorganic filler and 5-30 wt % of a thermosetting resin. A warping degree of the circuit substrate with respect to the external thermal radiation member is at most 1/500 of a length of the substrate, and the circuit substrate warps to protrude toward the thermal radiation board as the temperature rises. Accordingly, the thermal radiation property does not deteriorate even when the temperature rises in use. At a time of fixing the circuit substrate to the external thermal radiation member, the thermal resistance is kept to be a sufficiently low level. The thermal resistance is kept in a low level without sacrificing the contact between a module and the external thermal radiation member even at a high temperature during an operation of the device or the like, and the thermal conductive substrate is resistant to fractures or cracks and thus is highly reliable.

    摘要翻译: 半导体模块包括由布线图案,电绝缘层和热辐射板构成的电路基板,并且在使用中固定到外部热辐射构件,其中电绝缘层由含有70的导热混合物 -95重量%的无机填料和5-30重量%的热固性树脂。 电路基板相对于外部热辐射部件的翘曲程度为基板长度的至多1/500,电路基板随温度升高而向热辐射板翘曲。 因此,即使使用温度上升,热辐射性也不会劣化。 在将电路基板固定到外部热辐射部件的时刻,热阻保持在足够低的水平。 即使在器件等的操作期间,即使在高温下,热阻也保持在低水平而不牺牲模块和外部热辐射构件之间的接触,并且导热基板抵抗裂缝或裂纹,因此 高度可靠。

    FLEXIBLE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME
    38.
    发明申请
    FLEXIBLE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME 有权
    柔性半导体器件及其制造方法

    公开(公告)号:US20120181543A1

    公开(公告)日:2012-07-19

    申请号:US13498700

    申请日:2011-04-14

    摘要: Disclosed are a flexible semiconductor device and manufacturing method therefor whereby the capacitances of capacitor parts of semiconductor elements and the like can be increased while decreasing parasitic capacitances that arise between multilevel interconnections. The disclosed flexible semiconductor device is provided with an insulating film on which a semiconductor element is formed. The top and bottom surfaces of the insulating film have a top wiring pattern layer and a bottom wiring pattern layer, respectively. The semiconductor element comprises: a semiconductor layer formed on the top surface of the insulating film; a source electrode and a drain electrode formed on the top surface of the insulating film so as to contact the semiconductor layer; and a gate electrode formed on the bottom surface of the insulating film so as to be opposite the semiconductor layer. A first thickness, which is the thickness of the insulting film facing the source electrode, the drain electrode, the top wiring pattern layer, and the bottom wiring pattern layer, is greater than a second thickness, which is the thickness of the insulating film between the gate electrode and the semiconductor layer.

    摘要翻译: 公开了一种柔性半导体器件及其制造方法,由此可以增加半导体元件等的电容器部件的电容,同时减小在多层互连之间产生的寄生电容。 所公开的柔性半导体器件设置有形成有半导体元件的绝缘膜。 绝缘膜的顶表面和底表面分别具有顶部布线图案层和底部布线图案层。 半导体元件包括:形成在绝缘膜的顶表面上的半导体层; 源电极和漏电极,形成在绝缘膜的顶表面上以与半导体层接触; 以及形成在绝缘膜的底表面上以与半导体层相对的栅电极。 作为与源极电极,漏极电极,顶部布线图案层和底部布线图案层相对的绝缘膜的厚度的第一厚度大于第二厚度,其是绝缘膜的厚度 栅电极和半导体层。