Dicing tape-integrated film for semiconductor back surface
    34.
    发明授权
    Dicing tape-integrated film for semiconductor back surface 有权
    用于半导体背面的切割胶带一体化膜

    公开(公告)号:US08703584B2

    公开(公告)日:2014-04-22

    申请号:US12789878

    申请日:2010-05-28

    IPC分类号: H01L21/00

    摘要: The present invention provides a dicing tape-integrated film for semiconductor back surface, which includes: a dicing tape including a base material and a pressure-sensitive adhesive layer provided on the base material; and a film for flip chip type semiconductor back surface provided on the pressure-sensitive adhesive layer, in which the film for flip chip type semiconductor back surface has a multilayered structure including a wafer adhesion layer and a laser mark layer, the wafer adhesion layer is formed of a resin composition containing a thermosetting resin component and, as an optional component, a thermoplastic resin component in an amount of less than 30% by weight relative to the whole amount of resin components, and the laser mark layer is formed of a resin composition containing a thermoplastic resin component in an amount of 30% by weight or more relative to the whole amount of resin components and, as an optional component, a thermosetting resin component.

    摘要翻译: 本发明提供一种半导体背面用切割带一体膜,其特征在于,包括:基材的切割带和设置在基材上的粘合剂层; 以及设置在压敏粘合剂层上的倒装芯片型半导体背表面的薄膜,其中倒装芯片型半导体背表面膜具有包括晶片粘合层和激光标记层的多层结构,晶片粘附层为 由含有热固性树脂组分的树脂组合物和相对于树脂组分的总量小于30重量%的热塑性树脂组分作为任选组分形成,激光标记层由树脂形成 含有相对于树脂成分的总量为30重量%以上的热塑性树脂成分的组合物,作为任意成分的热硬化性树脂成分。

    FILM FOR FORMING PROTECTIVE LAYER
    36.
    发明申请
    FILM FOR FORMING PROTECTIVE LAYER 审中-公开
    形成保护层的电影

    公开(公告)号:US20120208009A1

    公开(公告)日:2012-08-16

    申请号:US13396532

    申请日:2012-02-14

    IPC分类号: B32B3/00 B32B27/38

    摘要: The present invention aims to provide a film for forming a protective layer that is capable of preventing cracks in a low dielectric material layer of a semiconductor wafer while suppressing an increase in the number of steps in the manufacture of a semiconductor device. This object is achieved by a film for forming a protective layer on a bumped wafer in which a low dielectric material layer is formed, including a support base, an adhesive layer, and a thermosetting resin layer, laminated in this order, wherein the melt viscosity of the thermosetting resin layer is 1×102 Pa·S or more and 2×104 Pa·S or less, and the shear modulus of the adhesive layer is 1×103 Pa or more and 2×106 Pa or less, when the thermosetting resin layer has a temperature in a range of 50 to 120° C.

    摘要翻译: 本发明的目的在于提供一种形成保护层的膜,其能够防止半导体晶片的低电介质材料层中的裂纹,同时抑制半导体器件的制造中的步骤数量的增加。 该目的通过在其上形成低介电材料层的凸起晶片上形成保护层的膜来实现,该薄膜包括依次层叠的支撑基底,粘合层和热固性树脂层,其中熔体粘度 的热固性树脂层的摩尔比为1×102Pa·S以上且2×104Pa·S以下,粘合剂层的剪切模量为1×10 3 Pa以上2×10 6 Pa以下时, 树脂层的温度为50〜120℃。