公开(公告)号：US10050132B2

公开(公告)日：2018-08-14

申请号：US15664106

申请日：2017-07-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Akihisa Shimomura ,  Yasumasa Yamane ,  Yuhei Sato ,  Tetsuhiro Tanaka ,  Masashi Tsubuku ,  Toshihiko Takeuchi ,  Ryo Tokumaru ,  Mitsuhiro Ichijo ,  Satoshi Toriumi ,  Takashi Ohtsuki ,  Toshiya Endo

IPC: H01L21/00 ,  H01L29/66 ,  H01L21/02 ,  H01L29/786

Abstract: A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved. One feature resides in forming an oxide semiconductor film over an oxygen-introduced insulating film, and then forming the source and drain electrodes with an antioxidant film thereunder. Here, in the antioxidant film, the width of a region overlapping with the source and drain electrodes is longer than the width of a region not overlapping with them. The transistor formed as such has less defects in the channel region, which will improve reliability of the semiconductor device.

公开(公告)号：US10020322B2

公开(公告)日：2018-07-10

申请号：US15390894

申请日：2016-12-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daigo Ito ,  Takahisa Ishiyama ,  Katsuaki Tochibayashi ,  Yoshinori Ando ,  Yasutaka Suzuki ,  Mitsuhiro Ichijo ,  Toshiya Endo ,  Shunpei Yamazaki

IPC: H01L29/10 ,  H01L27/12 ,  H01L29/49 ,  H01L29/786 ,  H01L29/778 ,  H01L29/24

CPC classification number: H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/7781 ,  H01L29/7782 ,  H01L29/7786 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696 ,  H01L2224/05 ,  H01L2224/48463

Abstract: A highly reliable semiconductor device which includes an oxide semiconductor is provided. Alternatively, a transistor having normally-off characteristics which includes an oxide semiconductor is provided. The transistor includes a first conductor, a first insulator, a second insulator, a third insulator, a first oxide, an oxide semiconductor, a second conductor, a second oxide, a fourth insulator, a third conductor, a fourth conductor, a fifth insulator, and a sixth insulator. The second conductor is separated from the sixth insulator by the second oxide. The third conductor and the fourth conductor are separated from the sixth insulator by the fifth insulator. The second oxide has a function of suppressing permeation of oxygen as long as oxygen contained in the sixth insulator is sufficiently supplied to the oxide semiconductor through the second oxide. The fifth insulator has a barrier property against oxygen.

公开(公告)号：US09793295B2

公开(公告)日：2017-10-17

申请号：US15251375

申请日：2016-08-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Tetsuhiro Tanaka ,  Yoshinori Ieda ,  Toshiyuki Miyamoto ,  Masafumi Nomura ,  Takashi Hamochi ,  Kenichi Okazaki ,  Mitsuhiro Ichijo ,  Toshiya Endo

IPC: H01L27/12 ,  H01L27/06 ,  H01L27/088

CPC classification number: H01L27/1207 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/1225

Abstract: A nitride insulating film which prevents diffusion of hydrogen into an oxide semiconductor film in a transistor including an oxide semiconductor is provided. Further, a semiconductor device which has favorable electrical characteristics by using a transistor including a silicon semiconductor and a transistor including an oxide semiconductor is provided. Two nitride insulating films having different functions are provided between the transistor including a silicon semiconductor and the transistor including an oxide semiconductor. Specifically, a first nitride insulating film which contains hydrogen is provided over the transistor including a silicon semiconductor, and a second nitride insulating film which has a lower hydrogen content than the first nitride insulating film and functions as a barrier film against hydrogen is provided between the first nitride insulating film and the transistor including an oxide semiconductor.

公开(公告)号：US09520410B2

公开(公告)日：2016-12-13

申请号：US14446934

申请日：2014-07-30

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Satoshi Murakami ,  Motomu Kurata ,  Hiroyuki Hata ,  Mitsuhiro Ichijo ,  Takashi Ohtsuki ,  Aya Anzai ,  Masayuki Sakakura

IPC: H01L27/14 ,  H01L29/04 ,  H01L29/15 ,  H01L31/036 ,  H01L27/12 ,  H01L27/32 ,  H01L51/52 ,  H01L33/60 ,  H01L51/00 ,  H01L51/56

CPC classification number: H04N5/655 ,  G06F3/02 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/3244 ,  H01L27/3258 ,  H01L27/3276 ,  H01L33/60 ,  H01L51/0005 ,  H01L51/5246 ,  H01L51/56 ,  H01L2224/4847 ,  H01L2227/323 ,  H01L2251/5323 ,  H04N5/642

Abstract: The present invention provides a method for manufacturing a highly reliable display device at a low cost with high yield. According to the present invention, a step due to an opening in a contact is covered with an insulating layer to reduce the step, and is processed into a gentle shape. A wiring or the like is formed to be in contact with the insulating layer and thus the coverage of the wiring or the like is enhanced. In addition, deterioration of a light-emitting element due to contaminants such as water can be prevented by sealing a layer including an organic material that has water permeability in a display device with a sealing material. Since the sealing material is formed in a portion of a driver circuit region in the display device, the frame margin of the display device can be narrowed.

公开(公告)号：US09076876B2

公开(公告)日：2015-07-07

申请号：US14018712

申请日：2013-09-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Mitsuhiro Ichijo ,  Toshiya Endo ,  Kunihiko Suzuki

IPC: H01L29/12 ,  H01L29/786 ,  H01L29/49 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L21/02565 ,  H01L21/441 ,  H01L21/477 ,  H01L29/247 ,  H01L29/42384 ,  H01L29/47 ,  H01L29/4908 ,  H01L29/495 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78696

Abstract: An object is to provide a semiconductor device having good electrical characteristics. A gate insulating layer having a hydrogen concentration less than 6×1020 atoms/cm3 and a fluorine concentration greater than or equal to 1×1020 atoms/cm3 is used as a gate insulating layer in contact with an oxide semiconductor layer forming a channel region, so that the amount of hydrogen released from the gate insulating layer can be reduced and diffusion of hydrogen into the oxide semiconductor layer can be prevented. Further, hydrogen present in the oxide semiconductor layer can be eliminated with the use of fluorine; thus, the hydrogen content in the oxide semiconductor layer can be reduced. Consequently, the semiconductor device having good electrical characteristics can be provided.

Abstract translation: 目的在于提供具有良好电气特性的半导体器件。 使用具有小于6×1020原子/ cm3的氢浓度和大于或等于1×1020原子/ cm3的氟浓度的栅极绝缘层作为与形成沟道区的氧化物半导体层接触的栅极绝缘层， 从而可以减少从栅极绝缘层释放的氢的量，并且可以防止氢向氧化物半导体层的扩散。 此外，可以通过使用氟来消除存在于氧化物半导体层中的氢; 因此，可以降低氧化物半导体层中的氢含量。 因此，可以提供具有良好电特性的半导体器件。

公开(公告)号：US08956934B2

公开(公告)日：2015-02-17

申请号：US13706841

申请日：2012-12-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Miyako Nakajima ,  Hidekazu Miyairi ,  Toshiyuki Isa ,  Erika Kato ,  Mitsuhiro Ichijo ,  Kazutaka Kuriki ,  Tomokazu Yokoi

IPC: H01L29/66 ,  H01L29/04 ,  H01L29/49 ,  H01L29/786

CPC classification number: H01L29/6675 ,  H01L29/04 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/78696

Abstract: An object is to provide a thin film transistor with small off current, large on current, and high field-effect mobility. A silicon nitride layer and a silicon oxide layer which is formed by oxidizing the silicon nitride layer are stacked as a gate insulating layer, and crystals grow from an interface of the silicon oxide layer of the gate insulating layer to form a microcrystalline semiconductor layer; thus, an inverted staggered thin film transistor is manufactured. Since crystals grow from the gate insulating layer, the thin film transistor can have a high crystallinity, large on current, and high field-effect mobility. In addition, a buffer layer is provided to reduce off current.

Abstract translation: 目的是提供具有小截止电流，大电流和高场效应迁移率的薄膜晶体管。 层叠氮化硅层和通过氧化氮化硅层形成的氧化硅层作为栅极绝缘层，从栅极绝缘层的氧化硅层的界面生长晶体，形成微晶半导体层; 因此，制造了反交错的薄膜晶体管。 由于晶体从栅极绝缘层生长，所以薄膜晶体管可以具有高结晶度，大电流和高的场效应迁移率。 此外，提供缓冲层以减少电流。

公开(公告)号：US08603899B2

公开(公告)日：2013-12-10

申请号：US13660449

申请日：2012-10-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Taketomi Asami ,  Mitsuhiro Ichijo ,  Satoshi Toriumi

IPC: H01L21/20 ,  H01L21/36

CPC classification number: H01L29/78678 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02672 ,  H01L27/12 ,  H01L27/1277 ,  H01L27/1285 ,  H01L27/3244 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78675

Abstract: At present, a forming process of a base film through an amorphous silicon film is conducted in respective film forming chambers in order to obtain satisfactory films. When continuous formation of the base film through the amorphous silicon film is performed in a single film forming chamber with the above film formation condition, crystallization is not sufficiently attained in a crystallization process. By forming the amorphous silicon film using silane gas diluted with hydrogen, crystallization is sufficiently attained in the crystallization process even with the continuous formation of the base film through the amorphous silicon film in the single film forming chamber.

公开(公告)号：US20130059404A1

公开(公告)日：2013-03-07

申请号：US13660449

申请日：2012-10-25

Applicant: Semiconductor Energy Laboratory Co.,Ltd.

Inventor： Taketomi Asami ,  Mitsuhiro Ichijo ,  Satoshi Toriumi

IPC: H01L33/00

CPC classification number: H01L29/78678 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02672 ,  H01L27/12 ,  H01L27/1277 ,  H01L27/1285 ,  H01L27/3244 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78675

Abstract: At present, a forming process of a base film through an amorphous silicon film is conducted in respective film forming chambers in order to obtain satisfactory films. When continuous formation of the base film through the amorphous silicon film is performed in a single film forming chamber with the above film formation condition, crystallization is not sufficiently attained in a crystallization process. By forming the amorphous silicon film using silane gas diluted with hydrogen, crystallization is sufficiently attained in the crystallization process even with the continuous formation of the base film through the amorphous silicon film in the single film forming chamber.

Abstract translation: 目前，为了得到满意的膜，在各成膜室中进行通过非晶硅膜的基膜的成膜工序。 当在具有上述成膜条件的单个成膜室中进行通过非晶硅膜的基膜的连续形成时，在结晶过程中不能充分结晶。 通过使用用氢稀释的硅烷气体形成非晶硅膜，即使在单一成膜室中通过非晶硅膜连续形成基底膜，也在结晶过程中充分获得结晶。