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    Polarization-insensitive optical modulators
    32.
    发明授权
    Polarization-insensitive optical modulators 失效
    极化不敏感的光学调制器

    公开(公告)号：US06275321B1

    公开(公告)日：2001-08-14

    申请号：US08510752

    申请日：1995-08-03

    Applicant: Peter David Greene ,  Mark Silver ,  Alfred Rodney Adams

    Inventor： Peter David Greene ,  Mark Silver ,  Alfred Rodney Adams

    IPC: G02F103

    CPC classification number: B82Y20/00 ,  G02F1/01725 ,  G02F2001/0157 ,  G02F2001/01758 ,  G02F2001/01766 ,  G02F2203/06

    Abstract: The or each strained quantum well layer of a quantum confined Stark effect modulator is provided with a substructure of substructure layers not all having the same lattice constant. The thickness and composition of these substructure layers may be arranged to produce a differential strain that is asymmetric with respect to the mid-plane of the quantum well and so skews the hole wavefunctions for heavy-holes, HH1, and light-holes, LH1, in opposite directions. This enables the choice of composition designed to provide substantial matching of the E1-HH1 and E1-LH1 Stark shifts for one particular polarity of applied field, thereby providing a modulation facility that is substantially polarisation insensitive. Alternatively, the thickness and composition of the layers may be chosen to produce a symmetrical strain profile in which the same effect is provided, but for both polarities of applied field.

    Abstract translation: 量子限制Stark效应调制器的每个应变量子阱层具有不全部具有相同晶格常数的子结构层的子结构。 这些子结构层的厚度和组成可以被布置成产生相对于量子阱的中间面不对称的微分应变，因此使重孔HH1和光孔LH1， 在相反的方向 这使得能够选择被设计为为施加场的一个特定极性提供E1-HH1和E1-LH1斯塔克移位的实质匹配，从而提供基本上极化不敏感的调制设备。 或者，可以选择层的厚度和组成以产生对应的应变分布，其中提供相同的效果，但是对于施加场的两个极性。

    Quasi type II semiconductor quantum well device
    34.
    发明授权
    Quasi type II semiconductor quantum well device 失效
    准二型半导体量子阱器件

    公开(公告)号：US5841151A

    公开(公告)日：1998-11-24

    申请号：US544088

    申请日：1995-10-17

    Applicant: Richard Sahara

    Inventor： Richard Sahara

    IPC: G02F1/025 ,  G02F1/015 ,  G02F1/017 ,  H01L27/15 ,  H01S5/00 ,  H01S5/026 ,  H01S5/042 ,  H01L29/06

    CPC classification number: B82Y20/00 ,  G02F1/01725 ,  H01S5/0265 ,  G02F2001/0158 ,  G02F2001/0175 ,  G02F2001/01758

    Abstract: A semiconductor device having a quantum well structure, the quantum well structure having: a first quantum well layer for forming a quantum well for electrons, the first quantum well layer having a first band structure; a second quantum well layer for forming a quantum well for holes, the second quantum well layer having a second band structure different from the first band structure; and an intermediate layer interposed between the first and second quantum well layers having a third band structure different from the first and second band structures, wherein the first quantum well layer forms a barrier to holes, and the second quantum well layer forms a barrier to electrons. Semiconductor devices having quantum well structures different from conventional type I and II quantum well structures are provided.

    Abstract translation: 一种具有量子阱结构的半导体器件，所述量子阱结构具有：用于形成用于电子的量子阱的第一量子阱层，所述第一量子阱层具有第一带结构; 用于形成用于空穴的量子阱的第二量子阱层，所述第二量子阱层具有不同于所述第一带结构的第二带结构; 以及介于所述第一和第二量子阱层之间的中间层，其具有不同于所述第一和第二带结构的第三带结构，其中所述第一量子阱层形成对空穴的屏障，并且所述第二量子阱层形成对电子的屏障 。 提供了具有与常规I型和II型量子阱结构不同的量子阱结构的半导体器件。

    Optical isolation created by indirect interband photonic transitions
    36.
    发明授权
    Optical isolation created by indirect interband photonic transitions 失效
    通过间接带间光子跃迁产生的光隔离

    公开(公告)号：US08639064B2

    公开(公告)日：2014-01-28

    申请号：US12496474

    申请日：2009-07-01

    Applicant: Zongfu Yu ,  Shanhui Fan

    Inventor： Zongfu Yu ,  Shanhui Fan

    IPC: G02F1/035

    CPC classification number: G02B6/12007 ,  B82Y20/00 ,  G02B6/1225 ,  G02F1/01708 ,  G02F1/225 ,  G02F1/2257 ,  G02F2001/0151 ,  G02F2001/01758 ,  G02F2001/212 ,  G02F2201/14 ,  G02F2202/32 ,  G02F2203/15

    Abstract: The refractive index of the at least one photonic structure having two separate photonic bands is modulated, so that light supplied to the at least one photonic structure and initially in one of the two photonic bands of the traveling along a forward direction in the at least one photonic structure is converted to light in a second one of the photonic bands, and light in the one photonic band traveling along a backward direction opposite to the forward direction in the at least one photonic structure is not converted and remains in the one photonic band, achieving non-reciprocity.

    Abstract translation: 具有两个分开的光子带的至少一个光子结构的折射率被调制，使得提供给至少一个光子结构并且最初在两个光子带中的一个中的光沿着至少一个 光子结构在第二个光子带中被转换为光，并且沿着与至少一个光子结构中的向前方向相反的反向方向行进的一个光子带中的光不被转换并保留在一个光子带中， 实现非互惠。

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