公开(公告)号：US20170140953A1

公开(公告)日：2017-05-18

申请号：US12244683

申请日：2008-10-02

Applicant: Hari Hegde

Inventor： Hari Hegde

IPC: H01L21/306 ,  C23F1/08 ,  B44C1/22

CPC classification number: H01L21/67063 ,  H01J27/18 ,  H01J37/08 ,  H01J37/3053 ,  H01J2237/061 ,  H01J2237/065 ,  H01J2237/3151

Abstract: An ion system for use in an etching system for etching at least a wafer using a gas. The ion system may include an ion chamber for containing charged particles generated from the gas. The ion system may also include a magnetic device surrounding at least a portion of the ion chamber. The magnetic device may affect the distribution of the charged particles in the ion chamber. The ion system may also include a grid assembly disposed between the ion chamber and the wafer when the wafer is etched. The charged particles may be provided through the grid assembly to etch the wafer when the wafer is etched.

公开(公告)号：US09653259B2

公开(公告)日：2017-05-16

申请号：US14400815

申请日：2013-05-14

Applicant: MAPPER LITHOGRAPHY IP B.V.

Inventor： Paul IJmert Scheffers

IPC: H01J37/00 ,  H01J37/304 ,  B82Y10/00 ,  H01J37/317 ,  B82Y40/00 ,  G01B11/14

CPC classification number: H01J37/3045 ,  B82Y10/00 ,  B82Y40/00 ,  G01B11/14 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/065 ,  H01J2237/24514 ,  H01J2237/24578 ,  H01J2237/3175 ,  H01J2237/31774

Abstract: The invention relates to a method for determining a beamlet position in a charged particle multi-beamlet exposure apparatus. The apparatus is provided with a sensor comprising a conversion element for converting charged particle energy into light and a light sensitive detector. The conversion element is provided with a sensor surface area provided with a 2D-pattern of beamlet blocking and non-blocking regions. The method comprises taking a plurality of measurements and determining the position of the beamlet with respect to the 2D-pattern on the basis of a 2D-image created by means of the measurements. Each measurement comprises exposing a feature onto a portion of the 2D-pattern with a beamlet, wherein the feature position differs for each measurement, receiving light transmitted through the non-blocking regions, converting the received light into a light intensity value, and assigning the light intensity value to the position at which the measurement was taken.

公开(公告)号：US09406479B1

公开(公告)日：2016-08-02

申请号：US14751087

申请日：2015-06-25

Applicant: Marian Mankos

Inventor： Marian Mankos

IPC: G21K5/04 ,  H01J37/147 ,  H01J37/285 ,  H01J37/28 ,  H01J37/20 ,  H01J37/14

CPC classification number: H01J37/28 ,  G01R31/307 ,  G01R31/44 ,  H01J37/045 ,  H01J37/153 ,  H01J2237/0432 ,  H01J2237/06333 ,  H01J2237/065 ,  H01J2237/1523 ,  H01J2237/1534 ,  H01J2237/2802 ,  H01J2237/2803

Abstract: One embodiment pertains to an apparatus for compressing an electron pulse. An electron source is illuminated by a pulsed laser and generates a pulse of electrons. The pulse enters a beam separator which deflects the electrons by 90 degrees into an electron mirror. The faster, higher energy electrons form the leading edge of the pulse and penetrate more deeply into the retarding field of the electron mirror than the lower energy electrons. After reflection, the lower energy electrons exit the electron mirror before the higher energy electrons and form the leading edge of the pulse. The reflected pulse reenters the separator and is deflected by 90 degrees towards the specimen. The fast, higher energy electrons catch up with the slow, low energy electrons as the electrons strike the specimen. The electrons are scattered by the specimen and used to form a two-dimensional image or diffraction pattern of the specimen.

Abstract translation: 一个实施例涉及一种用于压缩电子脉冲的装置。 电子源被脉冲激光照射并产生电子脉冲。 脉冲进入光束分离器，将电子偏转90度，使其成为电子反射镜。 更快，更高能量的电子形成脉冲的前沿，并且比较低能量电子更深入地进入电子反射镜的延迟场。 在反射之后，较低能量的电子在较高能量的电子之前离开电子反射镜并形成脉冲的前沿。 反射的脉冲重新进入分离器，并向样品偏转90度。 随着电子撞击样品，快速，高能量的电子赶上缓慢的低能电子。 电子被样品散射并用于形成样品的二维图像或衍射图案。

公开(公告)号：US20150380203A1

公开(公告)日：2015-12-31

申请号：US14500160

申请日：2014-09-29

Applicant: Boe Technology Group Co., Ltd. ,  Ordos Yuansheng Optoelectronics Co., Ltd.

Inventor： Zhiqiang Wang ,  Feng Kang ,  Bo Yang ,  Jingyi Xu

IPC: H01J37/08 ,  H01J37/05 ,  H01J37/317

CPC classification number: H01J37/08 ,  H01J27/024 ,  H01J37/3171 ,  H01J2237/0206 ,  H01J2237/065

Abstract: An electrode for use in an ion implantation system includes a body portion and a penetration portion. The penetration portion includes penetration holes which are closely and regularly arranged. The penetration holes have the shape of a circle or a regular polygon with at least four sides. The electrode has an increased aperture ratio which, in turn, increases the density of the ion beam, thereby improving the efficiency of the ion implantation process.

Abstract translation: 用于离子注入系统的电极包括主体部分和穿透部分。 穿透部分包括紧密且规则地布置的穿透孔。 穿透孔具有至少四边的圆形或正多边形的形状。 电极具有增加的孔径比，这又增加了离子束的密度，从而提高了离子注入过程的效率。

公开(公告)号：US09159527B2

公开(公告)日：2015-10-13

申请号：US12100570

申请日：2008-04-10

Applicant: Billy W. Ward ,  Lou Farkas ,  John A. Notte ,  Randall Percival

Inventor： Billy W. Ward ,  Lou Farkas ,  John A. Notte ,  Randall Percival

IPC: H01J27/00 ,  H01J37/08 ,  H01J27/26

CPC classification number: H01J37/08 ,  H01J27/26 ,  H01J2237/06341 ,  H01J2237/065 ,  H01J2237/0807 ,  H01J2237/28

Abstract: In one aspect the invention provides a gas field ion source assembly that includes an ion source in connection with an optical column such that an ion beam generated at the ion source travels through the optical column. The ion source includes an emitter having a width that tapers to a tip comprising a few atoms. In other aspects, the methods provide for manufacturing, maintaining and enhancing the performance of a gas field ion source including sharpening the tip of the ion source in situ.

Abstract translation: 在一个方面，本发明提供了一种气体离子源组件，其包括与光学柱连接的离子源，使得在离子源处产生的离子束穿过光学柱。 离子源包括具有与包含少量原子的尖端逐渐变细的宽度的发射体。 在其它方面，该方法提供制造，维持和提高气体离子源的性能，包括原位锐化离子源的尖端。

公开(公告)号：US20150270088A1

公开(公告)日：2015-09-24

申请号：US14621526

申请日：2015-02-13

Applicant: JEOL Ltd.

Inventor： Takashi Satoh

IPC: H01J3/08 ,  H01J3/02

CPC classification number: H01J3/08 ,  B22F3/1055 ,  B23K15/002 ,  B23K15/0026 ,  B23K15/0086 ,  B23K15/06 ,  B33Y30/00 ,  H01J3/02 ,  H01J3/024 ,  H01J3/027 ,  H01J37/063 ,  H01J37/305 ,  H01J2237/06308 ,  H01J2237/065 ,  H01J2237/3128 ,  Y02P10/295

Abstract: There is disclosed a method of controlling an electron gun without causing decreases in brightness of the electron beam if a current-limiting aperture cannot be used. The electron gun (10) has a cathode (11), a Wehnelt electrode (12), a control electrode (13), an anode (14), and a controller (22). The Wehnelt electrode (12) has a first opening (12c) in which the tip of the cathode is inserted, and focuses thermal electrons emitted from the tip of the cathode (11). The thermal electrons emitted from the tip of the cathode (11) are caused to pass into a second opening (13c) by the control electrode (13). The anode (14) accelerates the thermal electrons emitted from the cathode (11) such that the thermal electrons passed through the second opening (13c) pass through a third opening (14b) and impinge as an electron beam (B1) on a powdered sample (8). The controller (22) sets the bias voltage and the control voltage based on combination conditions of the bias voltage and control voltage to maintain the brightness of the beam constant.

Abstract translation: 如果不能使用限流孔，则公开了一种控制电子枪而不引起电子束亮度降低的方法。 电子枪（10）具有阴极（11），Wehnelt电极（12），控制电极（13），阳极（14）和控制器（22）。 Wehnelt电极（12）具有插入阴极顶端的第一开口（12c），并聚焦从阴极（11）的尖端发射的热电子。 从阴极（11）的顶端发射的热电子被控制电极（13）通入第二开口（13c）。 阳极（14）加速从阴极（11）发射的热电子，使得穿过第二开口（13c）的热电子通过第三开口（14b）并作为电子束（B1）撞击在粉末样品上 （8）。 控制器（22）基于偏置电压和控制电压的组合条件设置偏置电压和控制电压，以保持光束的亮度恒定。

公开(公告)号：US20150034835A1

公开(公告)日：2015-02-05

申请号：US14447589

申请日：2014-07-30

Applicant: Hitachi High-Technologies Corporation

Inventor： Soichiro Matsunaga ,  Souichi Katagiri ,  Hajime Kawano

IPC: H01J37/28 ,  H01J37/09 ,  H01J37/147 ,  H01J37/304

CPC classification number: H01J37/28 ,  H01J37/06 ,  H01J37/09 ,  H01J37/147 ,  H01J37/3045 ,  H01J2237/0455 ,  H01J2237/06316 ,  H01J2237/065 ,  H01J2237/1501 ,  H01J2237/24465 ,  H01J2237/24535 ,  H01J2237/24542

Abstract: An embodiment is to provide a technique that continuously applies a certain amount of an electron beam to a sample by selecting a beam applied to the sample from an electron beam emitted from an electron source in a scanning electron microscope. A charged particle apparatus is configured, including: a mechanism that detects the distribution of electric current strength with respect to the emitting direction of an electron beam emitted from an electron source; a functionality that predicts a fluctuation of an electric current applied to a sample by predicting the distribution of the electric current based on the detected result; a functionality that determines a position at which a beam applied to the sample is acquired based on the predicted result; and a mechanism that controls a position at which a probe beam is acquired based on the determined result.

Abstract translation: 一个实施例是提供一种技术，其通过从扫描电子显微镜中从电子源发射的电子束中选择施加到样品的光束，将一定量的电子束连续地施加到样品。 一种带电粒子装置，包括：检测相对于从电子源发射的电子束的发射方向的电流强度分布的机构; 通过基于检测结果预测电流分布来预测施加到样本的电流的波动的功能; 基于预测结果确定施加到样本的光束的位置的功能; 以及基于所确定的结果来控制获取探测光束的位置的机构。

公开(公告)号：US20110199027A1

公开(公告)日：2011-08-18

申请号：US13124816

申请日：2009-10-16

Applicant: Yong Hwan Kim

Inventor： Yong Hwan Kim

IPC: H01J29/56

CPC classification number: H01J37/077 ,  H01J2237/022 ,  H01J2237/061 ,  H01J2237/06375 ,  H01J2237/065 ,  H01J2237/0835

Abstract: The present invention relates to an electron beam generator with an adjustable beam width. Said electron beam generator comprises: a plasma generating chamber that generates and sustains plasma; an RF power-generating antenna disposed on the outer circumference of said plasma generating chamber; a primary grid mounted on the outlet of said plasma generating chamber; a secondary grid placed at a fixed distance away from said primary grid; a beam width controller comprising an inlet, an outlet and a hollow inside, wherein the inlet is located on the side of said secondary grid, and the electron particles introduced through said inlet form electron beams of a pre-set beam width and are discharged through said outlet; and an RF shield ring disposed to surround the outer circumference of the inlet of said beam width controller. In the electron beam generator of the present invention, the electron particles discharged from said plasma generating chamber are delivered in the form of electron beams of a preset beam width to the outlet of said beam width controller.

Abstract translation: 本发明涉及具有可调光束宽度的电子束发生器。 所述电子束发生器包括：产生和维持等离子体的等离子体产生室; 设置在所述等离子体发生室的外周的RF发电天线; 安装在所述等离子体产生室的出口上的主栅格; 放置在远离所述主栅格的固定距离处的次级栅格; 波束宽度控制器，其包括入口，出口和中空的内部，其中入口位于所述次级栅格的侧面，并且通过所述入口引入的电子粒子形成预定波束宽度的电子束，并通过 说出口 以及设置成围绕所述光束宽度控制器的入口的外圆周设置的RF屏蔽环。 在本发明的电子束发生器中，从等离子体发生室排出的电子粒子以预定的光束宽度的电子束的形式被输送到所述光束宽度控制器的出口。

公开(公告)号：US07999479B2

公开(公告)日：2011-08-16

申请号：US12424964

申请日：2009-04-16

Applicant: Costel Biloiu ,  Jay Scheuer ,  Alexander Perel

Inventor： Costel Biloiu ,  Jay Scheuer ,  Alexander Perel

IPC: H01J7/24 ,  H05H1/24

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J2237/061 ,  H01J2237/065 ,  H01J2237/0815 ,  H01L31/0288 ,  H01L31/1804 ,  H01L31/206 ,  Y02P70/521

Abstract: An ion source, capable of generating high-density wide ribbon ion beam, utilizing one or more plasma sources is disclosed. In addition to the plasma source(s), the ion source also includes a diffusion chamber. The diffusion chamber has an extraction aperture oriented along the same axis as the dielectric cylinder of the plasma source. In one embodiment, dual plasma sources, located on opposing ends of the diffusion chamber are used to create a more uniform extracted ion beam. In a further embodiment, a multicusp magnetic field is used to further improve the uniformity of the extracted ion beam.

Abstract translation: 公开了一种利用一个或多个等离子体源产生高密度宽带状离子束的离子源。 除了等离子体源之外，离子源还包括扩散室。 扩散室具有沿着与等离子体源的介质柱体相同的轴线定向的提取孔。 在一个实施例中，位于扩散室的相对端上的双等离子体源用于产生更均匀的提取离子束。 在另一实施例中，使用多脉冲磁场来进一步提高所提取的离子束的均匀性。

公开(公告)号：US20100264328A1

公开(公告)日：2010-10-21

申请号：US12424964

申请日：2009-04-16

Applicant: Costel Biloiu ,  Jay Scheuer ,  Alexander Perel

Inventor： Costel Biloiu ,  Jay Scheuer ,  Alexander Perel

IPC: H01J27/00

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J2237/061 ,  H01J2237/065 ,  H01J2237/0815 ,  H01L31/0288 ,  H01L31/1804 ,  H01L31/206 ,  Y02P70/521

Abstract: An ion source, capable of generating high-density wide ribbon ion beam, utilizing one or more plasma sources is disclosed. In addition to the plasma source(s), the ion source also includes a diffusion chamber. The diffusion chamber has an extraction aperture oriented along the same axis as the dielectric cylinder of the plasma source. In one embodiment, dual plasma sources, located on opposing ends of the diffusion chamber are used to create a more uniform extracted ion beam. In a further embodiment, a multicusp magnetic field is used to further improve the uniformity of the extracted ion beam.

Abstract translation: 公开了一种利用一个或多个等离子体源产生高密度宽带状离子束的离子源。 除了等离子体源之外，离子源还包括扩散室。 扩散室具有沿着与等离子体源的介质柱体相同的轴线定向的提取孔。 在一个实施例中，位于扩散室的相对端上的双等离子体源用于产生更均匀的提取离子束。 在另一实施例中，使用多脉冲磁场来进一步提高所提取的离子束的均匀性。