公开(公告)号：US09177861B1

公开(公告)日：2015-11-03

申请号：US14491728

申请日：2014-09-19

Applicant: Jungrae Park ,  Wei-Sheng Lei ,  James S. Papanu ,  Brad Eaton ,  Ajay Kumar

Inventor： Jungrae Park ,  Wei-Sheng Lei ,  James S. Papanu ,  Brad Eaton ,  Ajay Kumar

IPC: H01L21/00 ,  H01L21/78 ,  H01L21/308 ,  H01L21/3065 ,  H01L21/67 ,  H01J37/32 ,  B23K26/36 ,  B23K26/16

CPC classification number: H01L21/3065 ,  B23K26/0736 ,  B23K26/367 ,  B23K26/38 ,  B23K2103/56 ,  H01J37/32 ,  H01J37/32889 ,  H01J2237/334 ,  H01J2237/335 ,  H01L21/02057 ,  H01L21/30655 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/67069 ,  H01L21/67092 ,  H01L21/78

Abstract: Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with an elliptical or a spatio-temporal controlled laser beam profile laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.

Abstract translation: 对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。 在一个例子中，对具有多个集成电路的半导体晶片进行切割的方法包括在半导体晶片上形成掩模，该掩模由覆盖并保护集成电路的层组成。 然后用椭圆形或空间 - 时间控制的激光束轮廓激光划线工艺对掩模进行构图，以提供具有间隙的图案化掩模，暴露集成电路之间的半导体晶片的区域。 然后通过图案化掩模中的间隙对半导体晶片进行等离子体蚀刻，以对集成电路进行分离。

公开(公告)号：US20150255256A1

公开(公告)日：2015-09-10

申请号：US14498920

申请日：2014-09-26

Applicant: Applied Materials, Inc.

Inventor： Michael S. COX ,  Rongping WANG ,  Brian T. WEST ,  Roger M. JOHNSON ,  Colin John DICKINSON

IPC: H01J37/32

CPC classification number: H01J37/32844 ,  B01D53/323 ,  B01D2257/55 ,  B01D2257/553 ,  B01D2257/556 ,  B01D2258/0216 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/32495 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32596 ,  H01J37/32669 ,  H01J37/32825 ,  H01J2237/332 ,  H01J2237/334 ,  H01J2237/335 ,  H01L21/02123 ,  H01L21/02274 ,  Y02C20/30

Abstract: Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes a plasma source that has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.

Abstract translation: 本文公开的实施方案包括减轻半导体工艺中产生的化合物的减排系统。 减排系统包括具有平行于第一板的第一板和第二板的等离子体源。 电极设置在第一和第二板之间，并且外壁设置在围绕电极的第一和第二板之间。 等离子体源具有设置在第一板上的第一多个磁体和设置在第二板上的第二多个磁体。 由第一和第二多个磁体产生的磁场基本上垂直于在电极和外壁之间产生的电场。 在该配置中，产生致密等离子体。

公开(公告)号：US20150097485A1

公开(公告)日：2015-04-09

申请号：US14048493

申请日：2013-10-08

Applicant: XEI Scientific Inc.

Inventor： Ronald A. Vane

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/32596 ,  H01J37/32862 ,  H01J2237/335

Abstract: A plasma process method and apparatus for use with a vacuum instrument having a vacuum chamber evacuated by an oil free high vacuum pump to a base pressure below about 1 Pa. A gas buffer chamber in fluid communication with the plasma chamber, the gas buffer chamber having a volume about 1/500 to 1/2000 of the volume of the vacuum chamber. A valve between the plasma chamber and the gas chamber permits flow between the gas chamber and the plasma chamber, wherein, upon opening the valve, gas is admitted into the plasma chamber and pressure in the plasma chamber rises temporarily to between about 10 and about 200 Pa and plasma ignition can be obtained when the plasma excitation device is energized simultaneously. A flow restriction between the gas source and the gas chamber has a maximum flow rate therethrough of about 25 sccm. (standard cubic centimeters per minute) or less so that pressure in the plasma chamber remains between about 1 and about 7 Pa after plasma ignition to maintain plasma conduction and to avoid overloading or heating of the high vacuum pump.

Abstract translation: 一种用于真空装置的等离子体处理方法和装置，所述真空装置具有通过无油高真空泵抽真空至低于约1Pa的基础压力的真空室。与所述等离子体室流体连通的气体缓冲室，所述气体缓冲室具有 体积约为真空室体积的1/500至1/2000。 等离子体室和气室之间的阀允许在气室和等离子体室之间流动，其中，在打开阀时，气体进入等离子体室，等离子体室中的压力暂时上升到约10和约200之间 当等离子体激发装置被同时通电时，可以获得Pa和等离子体点火。 气体源和气体室之间的流量限制具有约25sccm的最大流速。 （标准立方厘米每分钟）以下，使等离子体室中的压力在等离子体点火之后保持在约1和约7Pa之间，以保持等离子体传导并避免高真空泵的过载或加热。

公开(公告)号：US08961694B2

公开(公告)日：2015-02-24

申请号：US12520327

申请日：2007-12-21

Applicant: Fokko Pieter Wieringa ,  Norbertus Benedictus Koster ,  Roland van Vliet ,  Hubert Adriaan van Mierlo

Inventor： Fokko Pieter Wieringa ,  Norbertus Benedictus Koster ,  Roland van Vliet ,  Hubert Adriaan van Mierlo

IPC: B08B6/00 ,  B08B3/00 ,  H01L21/306 ,  H01J37/32

CPC classification number: H01J37/3266 ,  H01J37/32357 ,  H01J37/32623 ,  H01J2237/335

Abstract: The invention relates to a plasma generator (1) for cleaning an object. The plasma generator (1) comprises a plasma chamber (2) and a support structure (6) arranged in the plasma chamber for supporting the object (7) to be cleaned. Further, the plasma generator comprises an electromagnetic shield (5a, 5b, 5c) counteracting a flow of charged plasma particles flowing from a plasma generating region towards the object, and a plasma source (8). In addition, the plasma generator comprises an additional plasma source (9,10) to form a composition of plasma sources that are arranged to generate in the plasma generating region plasmas, respectively, that mutually interact during operation of the plasma generator so as to force plasma particles to flow in a diffusely closed flow path.

Abstract translation: 本发明涉及一种用于清洁物体的等离子体发生器（1）。 等离子体发生器（1）包括等离子体室（2）和布置在等离子体室中的支撑结构（6），用于支撑待清洁的物体（7）。 此外，等离子体发生器包括抵抗从等离子体产生区域朝向物体流动的带电等离子体粒子的流动的电磁屏蔽（5a，5b，5c）和等离子体源（8）。 此外，等离子体发生器包括附加的等离子体源（9,10），以形成等离子体源的组成，其被布置成分别在等离子体产生区等离子体中产生，这些等离子体在等离子体发生器的操作期间相互作用，从而迫使 等离子体颗粒在弥漫闭合的流动路径中流动。

公开(公告)号：US20150050815A1

公开(公告)日：2015-02-19

申请号：US14387978

申请日：2013-03-13

Applicant: HITACHI KOKUSAI ELECTRIC INC.

Inventor： Yoshihiko Yanagisawa ,  Tetsuaki Inada

IPC: C23C16/44 ,  H01J37/32 ,  C23C16/455 ,  H01L21/02 ,  C23C16/52

CPC classification number: C23C16/4405 ,  C23C16/455 ,  C23C16/45551 ,  C23C16/52 ,  H01J37/32862 ,  H01J37/32889 ,  H01J2237/335 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02263 ,  H01L21/0228

Abstract: Provided is a semiconductor device manufacturing method which has: a step wherein a processing substrate to be processed is placed on a substrate mounting member that is provided in a processing chamber having a plurality of gas supply regions; a film-forming step wherein a processing gas is supplied to the processing chamber, and the substrate is processed; a step wherein the substrate is carried out from the processing chamber; and a cleaning step wherein the density of the cleaning gas is controlled, while controlling cleaning gas quantities in the gas supply regions, respectively, in a state wherein the substrate is not placed in the processing chamber.

Abstract translation: 本发明提供一种半导体器件的制造方法，其具有以下步骤：将处理用处理基板配置在设置在具有多个气体供给区域的处理室内的基板安装部件上; 成膜步骤，其中处理气体被供应到处理室，并且处理基板; 从所述处理室进行所述基板的工序; 以及清洁步骤，其中在其中基板未被放置在处理室中的状态下分别控制气体供应区域中的清洁气体量的同时控制清洁气体的密度。

公开(公告)号：US08951383B2

公开(公告)日：2015-02-10

申请号：US12973963

申请日：2010-12-21

Applicant: Hyo-san Lee ,  Chang-ki Hong ,  Kun-tack Lee ,  Jeong-nam Han

Inventor： Hyo-san Lee ,  Chang-ki Hong ,  Kun-tack Lee ,  Jeong-nam Han

IPC: C23F1/08 ,  H01L21/67

CPC classification number: H01L21/67017 ,  H01J37/32449 ,  H01J37/32467 ,  H01J37/32715 ,  H01J37/32743 ,  H01J37/32816 ,  H01J2237/334 ,  H01J2237/335 ,  H01L21/67028 ,  H01L21/67069 ,  H01L21/67276 ,  Y10T137/2931 ,  Y10T137/4673

Abstract: Provided are an apparatus and method for treating wafers using a supercritical fluid. The wafer treatment apparatus includes a plurality of chambers; a first supply supplying a first fluid in a supercritical state; a second supply supplying a mixture of the first fluid and a second fluid; a plurality of first and second valves; and a controller selecting a first chamber of the plurality of chambers for wafer treatment to control the open/closed state of each of the plurality of first valves so that the first fluid can be supplied only to the first chamber of the plurality of chambers and selecting a second chamber of the plurality of chambers to control the open/closed state of each of the plurality of second valves so that the mixture of the first fluid and a second fluid can be supplied only to the second chamber of the plurality of chambers. The wafer treatment method involves performing a predetermined treatment such as etching, cleaning or drying on wafers within only one of the plurality of chambers, followed by wafer treatment on the succeeding chamber, and thus allowing for sequential wafer treatment within each of the plurality of chambers.

Abstract translation: 提供了一种使用超临界流体处理晶片的设备和方法。 晶片处理装置包括多个室; 供应超临界状态的第一流体的第一供应源; 供应第一流体和第二流体的混合物的第二供应源; 多个第一和第二阀; 以及控制器，选择用于晶片处理的多个室的第一室，以控制多个第一阀中的每一个的打开/关闭状态，使得第一流体仅能够供应到多个室的第一室，并且选择 多个室中的第二室，用于控制多个第二阀中的每一个的打开/关闭状态，使得第一流体和第二流体的混合物只能供应到多个室的第二室。 晶片处理方法包括对多个室内的仅一个中的晶片进行蚀刻，清洗或干燥等预定处理，然后在后续室进行晶片处理，从而允许在多个室内进行顺序晶片处理 。

公开(公告)号：US20140251953A1

公开(公告)日：2014-09-11

申请号：US13791246

申请日：2013-03-08

Applicant: ASM IP HOLDING B.V.

Inventor： Jereld Lee Winkler

IPC: H01J37/32

CPC classification number: H01J37/32422 ,  B08B7/0035 ,  C23C16/452 ,  C23C16/45557 ,  C23C16/50 ,  C23C16/52 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32862 ,  H01J2237/3321 ,  H01J2237/334 ,  H01J2237/335

Abstract: A system and method for providing intermediate reactive species from a remote plasma unit to a reaction chamber are disclosed. The system includes a pressure control device to control a pressure at the remote plasma unit as intermediate reactive species from the remote plasma unit are provided to the reaction chamber.

Abstract translation: 公开了一种从远程等离子体单元向反应室提供中等反应物种的系统和方法。 该系统包括用于控制远程等离子体单元处的压力的压力控制装置，因为来自远程等离子体单元的中间反应物质被提供给反应室。

公开(公告)号：US20140020708A1

公开(公告)日：2014-01-23

申请号：US13553734

申请日：2012-07-19

Applicant: Keechan Kim ,  Yansung Kim

Inventor： Keechan Kim ,  Yansung Kim

IPC: C23F1/08 ,  B08B7/00

CPC classification number: H01J37/32862 ,  B08B7/0035 ,  H01J37/32091 ,  H01J37/32385 ,  H01J37/32568 ,  H01J37/32623 ,  H01J2237/334 ,  H01J2237/335

Abstract: Systems and methods for edge exclusion control are described. One of the systems includes a plasma chamber. The plasma processing chamber includes a lower electrode having a surface for supporting a substrate. The lower electrode is coupled with a radio frequency (RF) power supply. The plasma processing chamber further includes an upper electrode disposed over the lower electrode. The upper electrode is electrically grounded. The plasma processing chamber includes an upper dielectric ring surrounding the upper electrode. The upper dielectric ring is moved using a mechanism for setting a vertical position of the upper dielectric ring separate from a position of the upper electrode. The system further includes an upper electrode extension surrounding the upper dielectric ring. The upper electrode extension is electrically grounded. The system also includes a lower electrode extension surrounding the lower dielectric ring. The lower electrode extension is arranged opposite the upper electrode extension.

Abstract translation: 描述了边缘排除控制的系统和方法。 系统中的一个包括等离子体室。 等离子体处理室包括具有用于支撑基板的表面的下电极。 下电极与射频（RF）电源耦合。 等离子体处理室还包括设置在下电极上的上电极。 上电极电接地。 等离子体处理室包括围绕上电极的上介质环。 使用用于将上介电环的垂直位置设置为与上电极的位置分开的机构来移动上介质环。 该系统还包括围绕上部介质环的上部电极延伸部。 上电极延伸部电接地。 该系统还包括围绕下介电环的下电极延伸部。 下电极延伸部布置成与上电极延伸部相对。

公开(公告)号：US08480807B2

公开(公告)日：2013-07-09

申请号：US13124261

申请日：2009-10-16

Applicant: Norbertus Benedictus Koster ,  René Koops ,  Kemal Agovic ,  Fokko Pieter Wieringa

Inventor： Norbertus Benedictus Koster ,  René Koops ,  Kemal Agovic ,  Fokko Pieter Wieringa

IPC: C25F1/00

CPC classification number: A61L2/14 ,  A61L2/28 ,  H01J37/32431 ,  H01J2237/335

Abstract: The invention relates to a method of cleaning and/or sterilization of an object provided in a hermetically sealed enclosure, providing a pressure difference between an internal volume of the enclosure and surroundings and generating a plasma solely inside the enclosure for said cleaning and/or sterilization of the object. The invention further relates to an apparatus for enabling the same. The apparatus 10 comprises a vacuum chamber 1, which can be evacuated using a vacuum pump 2, and a source 3 arranged to generate plasma of a suitable gas in an enclosure 8, which is substantially hermetically closed with respect to the atmosphere of the vacuum chamber. The enclosure 8 may be of a flexible type or may be manufactured from a rigid material. In case when the enclosure is rigid the pressure inside the enclosure may be lower than an outside pressure.

Abstract translation: 本发明涉及一种清洁和/或杀菌的方法，所述物体设置在气密密封的外壳中，在外壳的内部容积与周围环境之间提供压力差，并且仅在外壳内部产生用于所述清洁和/或灭菌的等离子体 的对象。 本发明还涉及一种用于实现该装置的装置。 设备10包括可以使用真空泵2抽真空的真空室1和排出成在外壳8中产生合适气体的等离子体的源3，该外壳8相对于真空室的气氛基本气密地闭合 。 外壳8可以是柔性类型的，或者可以由刚性材料制造。 在外壳刚性的情况下，外壳内的压力可能低于外部压力。

公开(公告)号：US08444869B1

公开(公告)日：2013-05-21

申请号：US12786230

申请日：2010-05-24

Applicant: Haruhiro Harry Goto ,  David Cheung

Inventor： Haruhiro Harry Goto ,  David Cheung

IPC: H01L21/302

CPC classification number: H01L21/67028 ,  H01J2237/335 ,  H01L21/02057 ,  H01L21/0209 ,  H01L21/6719 ,  H01L21/67748 ,  H01L21/68771 ,  Y10S134/902 ,  Y10S438/906

Abstract: A method and apparatus for cleaning a wafer. The wafer is heated and moved to a processing station within the apparatus that has a platen either permanently in a platen down position or is transferable from a platen up position to the platen down position. The wafer is positioned over the platen so as not to contact the platen and provide a gap between the platen and wafer. The gap may be generated by positioning the platen in a platen down position. A plasma flows into the gap to enable the simultaneous removal of material from the wafer front side, backside and edges. The apparatus may include a single processing station having the gap residing therein, or the apparatus may include a plurality of processing stations, each capable of forming the gap therein for simultaneously removing additional material from the wafer front side, backside and edges.

Abstract translation: 一种用于清洁晶片的方法和装置。 晶片被加热并移动到设备内的处理站，该处理站具有永久地处于压板下降位置的压板，或者可以从压板向上位置传递到压板向下位置。 将晶片定位在压板上方，以便不与压板接触并在压板和晶片之间提供间隙。 可以通过将压板放置在压板向下位置来产生间隙。 等离子体流入间隙，以能够从晶片正面，背面和边缘同时移除材料。 该设备可以包括具有位于其中的间隙的单个处理站，或者该设备可以包括多个处理站，每个处理站能够在其中形成间隙，以从晶片前侧，后侧和边缘同时移除附加材料。