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公开(公告)号：US06896773B2
公开(公告)日：2005-05-24
申请号：US10065739
申请日：2002-11-14
申请人： Roman Chistyakov
发明人： Roman Chistyakov
CPC分类号： C23C14/354 , C23C14/228 , C23C14/3414 , C23C14/3485 , C23C14/3492 , C23C14/35 , C23C14/542 , H01J37/3266 , H01J37/32697 , H01J37/3405 , H01J37/3408 , H01J37/3429 , H01J37/3455 , H01J37/3467 , H01J37/3476 , H01L21/02266
摘要： Methods and apparatus for high-deposition sputtering are described. A sputtering source includes an anode and a cathode assembly that is positioned adjacent to the anode. The cathode assembly includes a sputtering target. An ionization source generates a weakly-ionized plasma proximate to the anode and the cathode assembly. A power supply produces an electric field between the anode and the cathode assembly that creates a strongly-ionized plasma from the weakly-ionized plasma. The strongly-ionized plasma includes a first plurality of ions that impact the sputtering target to generate sufficient thermal energy in the sputtering target to cause a sputtering yield of the sputtering target to be non-linearly related to a temperature of the sputtering target.
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公开(公告)号：US11932934B2
公开(公告)日：2024-03-19
申请号：US17941137
申请日：2022-09-09
发明人： Halbert Chong , Lei Zhou , Adolph Miller Allen , Vaibhav Soni , Kishor Kalathiparambil , Vanessa Faune , Song-Moon Suh
CPC分类号： C23C14/54 , C23C14/0605 , C23C14/35 , H01J37/3405 , H01J37/3426 , H01J37/3467 , H01J37/3455 , H01J2237/002 , H01J2237/332
摘要： Physical vapor deposition methods for reducing the particulates deposited on the substrate are disclosed. The pressure during sputtering can be increased to cause agglomeration of the particulates formed in the plasma. The agglomerated particulates can be moved to an outer portion of the process chamber prior to extinguishing the plasma so that the agglomerates fall harmlessly outside of the diameter of the substrate.
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公开(公告)号：US11906700B2
公开(公告)日：2024-02-20
申请号：US17323947
申请日：2021-05-18
申请人： SCHOTT AG
发明人： Christian Henn , Thorsten Damm
IPC分类号： G02B1/116 , G02B1/115 , H01J37/34 , C03C17/34 , C23C14/08 , C23C14/18 , C23C14/34 , C23C14/35
CPC分类号： G02B1/116 , C03C17/3435 , C23C14/08 , C23C14/185 , C23C14/3485 , C23C14/35 , G02B1/115 , H01J37/3467 , C03C2217/734 , C03C2217/77
摘要： A substrate is provided with an abrasion resistance antireflection coating. The coated substrate includes a multilayer antireflection coating on at least one side. The coating has layers with different refractive indices, wherein higher refractive index layers alternate with lower refractive index layers. The layers having a lower refractive index are formed of silicon oxide with a proportion of aluminum, with a ratio of the amounts of aluminum to silicon is greater than 0.05, preferably greater than 0.08, but with the amount of silicon predominant relative to the amount of aluminum. The layers having a higher refractive index include a silicide, an oxide, or a nitride.
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公开(公告)号：US20230257866A1
公开(公告)日：2023-08-17
申请号：US18128672
申请日：2023-03-30
申请人： Carl Zeiss SMT GmbH
发明人： Anastasia GONCHAR , Joern WEBER , Vitaliy SHKLOVER
CPC分类号： C23C14/0036 , C23C14/352 , C23C14/3485 , C23C14/3471 , C23C14/3421 , H01J37/3405 , H01J37/32357 , H01J37/3417 , H01J37/345 , H01J37/3467 , G21K1/06 , H01J37/3485 , G03F7/70958 , G03F7/70316 , G03F7/70033 , H01J2237/332 , G21K2201/067
摘要： A method for producing an optical element (2), in particular for a projection exposure system (400), according to which a protective layer (11) consisting of a protective material is applied to a surface of a main body (7) until a protective layer thickness is obtained. The main body (7) has a substrate (17) and a reflective layer (18) applied to the substrate (17). The protective layer (11) is at least substantially defect-free.
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35.发明申请公开(公告)号：US20180195164A1
公开(公告)日：2018-07-12
申请号：US15917046
申请日：2018-03-09
申请人： IonQuest LLC
CPC分类号： C23C14/354 , C23C14/0057 , C23C14/0605 , C23C14/14 , C23C14/345 , C23C14/3485 , C23C14/35 , H01J37/321 , H01J37/32825 , H01J37/3405 , H01J37/3417 , H01J37/3426 , H01J37/3435 , H01J37/345 , H01J37/3452 , H01J37/3455 , H01J37/3464 , H01J37/3467 , H01L21/2855 , H01L21/76843 , H01L21/76871 , H01L21/76879 , H01L21/76882 , H01L23/5226 , H01L23/53238
摘要： A magnetically enhanced HDP-CVD plasma source includes a hollow cathode target and an anode. The anode and cathode form a gap. A cathode target magnet assembly forms magnetic field lines that are substantially perpendicular to a cathode target surface. The gap magnet assembly forms a cusp magnetic field in the gap that is coupled with the cathode target magnetic field. The magnetic field lines cross a pole piece electrode positioned in the gap. This pole piece is isolated from ground and can be connected with a voltage power supply. The pole piece can have a negative, positive, or floating electric potential. The plasma source can be configured to generate volume discharge. The gap size prohibits generation of plasma discharge in the gap. By controlling the duration, value and a sign of the electric potential on the pole piece, the plasma ionization can be controlled. The magnetically enhanced HDP-CVD source can also be used for chemically enhanced ionized physical vapor deposition (CE-IPVD). Gas flows through the gap between hollow cathode and anode. The cathode target is inductively grounded, and the substrate is periodically inductively grounded.
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公开(公告)号：US20180174808A1
公开(公告)日：2018-06-21
申请号：US15834036
申请日：2017-12-06
发明人： DAISUKE SUETSUGU , MASAAKI TANABE , AKIRA OKUDA , YOSIMASA TAKII
CPC分类号： H01J37/3476 , C23C14/0652 , C23C14/3485 , C23C14/35 , C23C14/50 , C23C14/54 , H01J37/32715 , H01J37/3402 , H01J37/3467 , H01L21/0217 , H01L21/02266
摘要： A sputtering apparatus has a vacuum chamber capable of arranging a target material and a substrate therein so as to face each other, a DC power supply capable of electrically being connected to the target material, and a pulsing unit pulsing electric current flowing in the target material from the DC power supply, in which plasma is generated in the vacuum chamber to form a thin film on the substrate, including an ammeter measuring electric current flowing in the pulsing unit from the DC power supply, a power supply controller performing feedback control of the DC power supply so that a current value measured by the ammeter becomes a prescribed value and a pulse controller indicating a pulse cycle shifted from a control cycle of the DC power supply by the power supply controller to the pulsing unit.
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公开(公告)号：US09951414B2
公开(公告)日：2018-04-24
申请号：US15261119
申请日：2016-09-09
申请人： IonQuest LLC
CPC分类号： C23C14/354 , C23C14/0057 , C23C14/0605 , C23C14/14 , C23C14/345 , C23C14/3485 , C23C14/35 , H01J37/321 , H01J37/32825 , H01J37/3405 , H01J37/3417 , H01J37/3426 , H01J37/3435 , H01J37/345 , H01J37/3452 , H01J37/3455 , H01J37/3464 , H01J37/3467 , H01L21/2855 , H01L21/76843 , H01L21/76871 , H01L21/76879 , H01L21/76882 , H01L23/5226 , H01L23/53238
摘要： A magnetically enhanced HDP-CVD plasma source includes a hollow cathode target and an anode. The anode and cathode form a gap. A cathode target magnet assembly forms magnetic field lines that are substantially perpendicular to a cathode target surface. The gap magnet assembly forms a cusp magnetic field in the gap that is coupled with the cathode target magnetic field. The magnetic field lines cross a pole piece electrode positioned in the gap. This pole piece is isolated from ground and can be connected with a voltage power supply. The pole piece can have a negative, positive, or floating electric potential. The plasma source can be configured to generate volume discharge. The gap size prohibits generation of plasma discharge in the gap. By controlling the duration, value and a sign of the electric potential on the pole piece, the plasma ionization can be controlled. The magnetically enhanced HDP-CVD source can also be used for chemically enhanced ionized physical vapor deposition (CE-IPVD). Gas flows through the gap between hollow cathode and anode. The cathode target is inductively grounded, and the substrate is periodically inductively grounded.
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38.发明申请公开(公告)号：US20180051368A1
公开(公告)日：2018-02-22
申请号：US15600247
申请日：2017-05-19
发明人： Jingjing Liu , Zhong Qiang Hua , Adolph Miller Allen , Michael W. Stowell , Srinivas D. Nemani , Chentsau Ying , Bhargav Citla , Viachslav Babayan , Andrej Halabica
CPC分类号： C23C14/0605 , C23C14/3485 , C23C14/35 , C23C14/354 , C23C14/541 , C23C14/542 , H01J37/32724 , H01J37/3426 , H01J37/3435 , H01J37/3452 , H01J37/3467 , H01L21/02115 , H01L21/02266 , H01L21/0332 , H01L21/31144
摘要： A deposited amorphous carbon film includes at least 95% carbon. A percentage of sp3 carbon-carbon bonds present in the amorphous carbon film exceeds 30%, and a hydrogen content of the amorphous carbon film is less than 5%. A process of depositing amorphous carbon on a workpiece includes positioning the workpiece within a process chamber and positioning a magnetron assembly adjacent to the process chamber. The magnetron assembly projects a magnetic field into the process chamber. The method further includes providing a carbon target such that the magnetic field extends through the carbon target toward the workpiece. The method further includes providing a source gas to the process chamber, and providing pulses of DC power to a plasma formed from the source gas within the process chamber. The pulses of DC power are supplied in pulses of 40 microseconds or less, that repeat at a frequency of at least 4 kHz.
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公开(公告)号：US20170204511A1
公开(公告)日：2017-07-20
申请号：US15475331
申请日：2017-03-31
申请人： Evatec AG
发明人： Sven Uwe Rieschl , Juergen Weichart
CPC分类号： C23C14/351 , C23C14/3407 , C23C14/3485 , C23C14/3492 , C23C14/35 , H01J37/3405 , H01J37/3426 , H01J37/3455 , H01J37/3467
摘要： So as to control the operation of a sputter target during the lifetime of the target and under HIPIMS operation, part of a magnet arrangement associated to the target is retracted from the target whereas a second part II of the magnet arrangement is, if at all, retracted less from the addressed backside during the lifetime of the target. Thereby, part I is closer to the periphery of target than part II, as both are eccentrically rotated about a rotational axis.
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公开(公告)号：US20170175253A1
公开(公告)日：2017-06-22
申请号：US15261119
申请日：2016-09-09
申请人： IonQuest LLC
CPC分类号： C23C14/354 , C23C14/0057 , C23C14/0605 , C23C14/14 , C23C14/345 , C23C14/3485 , C23C14/35 , H01J37/321 , H01J37/32825 , H01J37/3405 , H01J37/3417 , H01J37/3426 , H01J37/3435 , H01J37/345 , H01J37/3452 , H01J37/3455 , H01J37/3464 , H01J37/3467 , H01L21/2855 , H01L21/76843 , H01L21/76871 , H01L21/76879 , H01L21/76882 , H01L23/5226 , H01L23/53238
摘要： A magnetically enhanced HDP-CVD plasma source includes a hollow cathode target and an anode. The anode and cathode form a gap. A cathode target magnet assembly forms magnetic field lines that are substantially perpendicular to a cathode target surface. The gap magnet assembly forms a cusp magnetic field in the gap that is coupled with the cathode target magnetic field. The magnetic field lines cross a pole piece electrode positioned in the gap. This pole piece is isolated from ground and can be connected with a voltage power supply. The pole piece can have a negative, positive, or floating electric potential. The plasma source can be configured to generate volume discharge. The gap size prohibits generation of plasma discharge in the gap. By controlling the duration, value and a sign of the electric potential on the pole piece, the plasma ionization can be controlled. The magnetically enhanced HDP-CVD source can also be used for chemically enhanced ionized physical vapor deposition (CE-IPVD). Gas flows through the gap between hollow cathode and anode. The cathode target is inductively grounded, and the substrate is periodically inductively grounded.
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