公开(公告)号：US20180099916A1

公开(公告)日：2018-04-12

申请号：US15729210

申请日：2017-10-10

Applicant: ASM IP Holding B.V.

Inventor： Timo Hatanpää ,  Miika Mattinen ,  Mikko Ritala ,  Markku Leskelä

IPC: C07C49/92 ,  C23C16/455 ,  C23C16/30 ,  C07C45/77

CPC classification number: C07C49/92 ,  C07C45/77 ,  C23C16/305 ,  C23C16/45553

Abstract: Methods are provided for synthesizing W(IV) beta-diketonate precursors. Additionally, methods are provided for forming W containing thin films, such as WS2, WNx, WO3, and W via vapor deposition processes, such as atomic layer deposition (ALD) type processes and chemical vapor deposition (CVD) type processes. Methods are also provided for forming 2D materials containing W.

公开(公告)号：US09929009B2

公开(公告)日：2018-03-27

申请号：US15435769

申请日：2017-02-17

Applicant: ASM IP HOLDING B.V.

Inventor： Raija H. Matero

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/28 ,  H01L29/66

CPC classification number: H01L21/02532 ,  C23C16/28 ,  C23C16/45525 ,  H01L21/0262 ,  H01L29/66795

Abstract: In some aspects, methods for forming a germanium thin film using a cyclical deposition process are provided. In some embodiments, the germanium thin film is formed on a substrate in a reaction chamber, and the process includes one or more deposition cycles of alternately and sequentially contacting the substrate with a vapor phase germanium precursor and a nitrogen reactant. In some embodiments, the process is repeated until a germanium thin film of desired thickness has been formed.

公开(公告)号：US20180082838A1

公开(公告)日：2018-03-22

申请号：US15820916

申请日：2017-11-22

Applicant: ASM IP HOLDING B.V.

Inventor： Viljami Pore

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/02167 ,  C23C16/30 ,  C23C16/45553 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/31111

Abstract: A process for depositing a silicon carbon nitride film on a substrate can include a plurality of complete deposition cycles, each complete deposition cycle having a SiN sub-cycle and a SiCN sub-cycle. The SiN sub-cycle can include alternately and sequentially contacting the substrate with a silicon precursor and a SiN sub-cycle nitrogen precursor. The SiCN sub-cycle can include alternately and sequentially contacting the substrate with carbon-containing precursor and a SiCN sub-cycle nitrogen precursor. The SiN sub-cycle and the SiCN sub-cycle can include atomic layer deposition (ALD). The process for depositing the silicon carbon nitride film can include a plasma treatment. The plasma treatment can follow a completed plurality of complete deposition cycles.

公开(公告)号：US20180069019A1

公开(公告)日：2018-03-08

申请号：US15798150

申请日：2017-10-30

Applicant: ASM IP Holding B.V.

Inventor： Young Jae Kim ,  Seung Woo Choi ,  Yong Min Yoo

IPC: H01L27/11582 ,  H01L21/225 ,  H01L21/28

CPC classification number: H01L27/11582 ,  H01L21/2255 ,  H01L29/40117

Abstract: Disclosed are a semiconductor device and a manufacturing method thereof. According to the semiconductor device and the manufacturing method thereof according to exemplary embodiments of the present invention, after the dopant source layer is uniformly deposited on a channel layer of the device with the 3-dimensional vertical structure by the plasma-enhanced atomic layer deposition (PEALD) method, the deposited dopant source layer is heat-treated so that the dopants are diffused into the channel layer to function as charge carriers, thereby preventing the charges in the channel layer from being reduced. According to the exemplary embodiments of the present invention, the diffusion speed and concentration of the dopant may be controlled by forming the barrier layer between the channel layer and the dopant source layer.

公开(公告)号：US20180066360A1

公开(公告)日：2018-03-08

申请号：US15700247

申请日：2017-09-11

Applicant: ASM IP Holding B.V.

Inventor： Hannu Huotari ,  Tom E. Blomberg

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/52

CPC classification number: C23C16/44 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45561 ,  C23C16/52

Abstract: The present invention relates generally to methods and apparatus for the controlled growing of material on substrates. According to embodiments of the present invention, a precursor feed is controlled in order to provide an optimal pulse profile. This may be accomplished by splitting the feed into two paths. One of the paths is restricted in a continuous manner. The other path is restricted in a periodic manner. The output of the two paths converges at a point prior to entry of the reactor. Therefore, a single precursor source is able to fed precursor in to a reactor under two different conditions, one which can be seen as mimicking ALD conditions and one which can be seen as mimicking CVD conditions. This allows for an otherwise single mode reactor to be operated in a plurality of modes including one or more ALD/CVD combination modes. Additionally, the pulse profile of each pulse can be modified. The pulse profile can be modified to create a low or very low partial pressure pulse profile at the beginning of a pulse.

公开(公告)号：US20180061648A1

公开(公告)日：2018-03-01

申请号：US15645059

申请日：2017-07-10

Applicant: ASM IP Holding B.V.

Inventor： Tom E. Blomberg ,  Jaakko Anttila

IPC: H01L21/285 ,  C23C16/455 ,  C23C16/34 ,  H01L21/28 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L21/28556 ,  C23C16/34 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/45536 ,  C23C16/45553 ,  H01L21/28088 ,  H01L21/28562 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/53238

Abstract: In one aspect, methods of forming smooth ternary metal nitride films, such as TixWyNz films, are provided. In some embodiments, the films are formed by an ALD process comprising multiple super-cycles, each super-cycle comprising two deposition sub-cycles. In one sub-cycle a metal nitride, such as TiN is deposited, for example from TiCl4 and NH3, and in the other sub-cycle an elemental metal, such as W, is deposited, for example from WF6 and Si2H6. The ratio of the numbers of each sub-cycle carried out within each super-cycle can be selected to achieve a film of the desired composition and having desired properties.

公开(公告)号：US09905492B2

公开(公告)日：2018-02-27

申请号：US15397319

申请日：2017-01-03

Applicant: ASM IP Holding B.V.

Inventor： Fu Tang ,  Michael E. Givens ,  Qi Xie ,  Petri Raisanen

IPC: H01L23/31 ,  H01L21/02 ,  H01L23/02 ,  H01L21/67 ,  H01L23/29 ,  H01L21/306 ,  C23C16/44 ,  C23C16/455

CPC classification number: H01L23/3171 ,  C23C16/4405 ,  C23C16/45544 ,  H01L21/02178 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02301 ,  H01L21/02312 ,  H01L21/306 ,  H01L21/67011 ,  H01L23/02 ,  H01L23/29 ,  H01L23/293 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Improved methods and systems for passivating a surface of a high-mobility semiconductor and structures and devices formed using the methods are disclosed. The method includes providing a high-mobility semiconductor surface to a chamber of a reactor and exposing the high-mobility semiconductor surface to a gas-phase sulfur precursor to passivate the high-mobility semiconductor surface.

公开(公告)号：US20180012792A1

公开(公告)日：2018-01-11

申请号：US15205890

申请日：2016-07-08

Applicant: ASM IP Holding B.V.

Inventor： Chiyu Zhu

IPC: H01L21/768 ,  H01L21/02

CPC classification number: H01L21/7682 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/02175 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/76832

Abstract: A method for depositing a film to form an air gap within a semiconductor device is disclosed. An exemplary method comprises pulsing a metal halide precursor onto the substrate and pulsing an oxygen precursor onto a selective deposition surface. The method can be used to form an air gap to, for example, reduce a parasitic resistance of the semiconductor device.

公开(公告)号：US20170372886A1

公开(公告)日：2017-12-28

申请号：US15426593

申请日：2017-02-07

Applicant: ASM IP Holding B.V.

Inventor： Shang Chen ,  Viljami Pore ,  Ryoko Yamada ,  Antti Juhani Niskanen

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/34 ,  C23C16/04

Abstract: Methods and precursors for forming silicon nitride films are provided. In some embodiments, silicon nitride can be deposited by atomic layer deposition (ALD), such as plasma enhanced ALD. In some embodiments, deposited silicon nitride can be treated with a plasma treatment. The plasma treatment can be a nitrogen plasma treatment. In some embodiments the silicon precursors for depositing the silicon nitride comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%). In some embodiments, a method for depositing silicon nitride films comprises a multi-step plasma treatment.

公开(公告)号：US20170372884A1

公开(公告)日：2017-12-28

申请号：US15627189

申请日：2017-06-19

Applicant: ASM IP Holding B.V.

Inventor： Joe Margetis ,  John Tolle

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/768

CPC classification number: H01L21/02005 ,  H01L21/0245 ,  H01L21/02452 ,  H01L21/02502 ,  H01L21/02507 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/0262 ,  H01L21/67167 ,  H01L21/7688 ,  H01L29/161

Abstract: A process for forming a thick defect-free epitaxial layer is disclosed. The process may comprise forming a buffer layer and a sacrificial layer prior to forming the thick defect-free epitaxial layer. The sacrificial layer and the thick defect-free epitaxial layer may be formed of the same material and at the same process conditions.