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    Method for processing devices including quantum dots and devices
    41.
    发明授权
    Method for processing devices including quantum dots and devices 有权
    用于处理包括量子点和器件的器件的方法

    公开(公告)号：US09136426B2

    公开(公告)日：2015-09-15

    申请号：US14076409

    申请日：2013-11-11

    Applicant: QD VISION, INC.

    Inventor： Sang-Jin Kim ,  Matthew Stevenson ,  Gagan Mahan ,  Peter T. Kazlas

    IPC: H01L21/00 ,  H01L33/00 ,  C09K11/02 ,  C09K11/56 ,  C09K11/88 ,  H05B33/10 ,  H05B33/14 ,  H01L33/06 ,  H01L51/50

    CPC classification number: H01L33/005 ,  C09K11/02 ,  C09K11/565 ,  C09K11/883 ,  H01L33/06 ,  H01L33/08 ,  H01L51/502 ,  H01L51/5237 ,  H01L51/56 ,  H01L2933/005 ,  H05B33/10 ,  H05B33/14

    Abstract: A method of processing quantum dots is disclosed. The method comprises applying energy to excite the quantum dots to emit light and placing the quantum dots under vacuum after excitation of the quantum dots. Also disclosed is a method of processing a component including quantum dots comprising applying energy to the component including quantum dots to excite the quantum dots to emit light; and placing the component including quantum dots under vacuum after excitation. A method for processing a device is further disclosed, the method comprising applying energy to the device to excite the quantum dots to emit light; and placing the device under vacuum after excitation of the quantum dots. A method for preparing a device is also disclosed. Quantum dots, component, and devices of the methods are also disclosed.

    Abstract translation: 公开了一种处理量子点的方法。 该方法包括施加能量以激发量子点发光并在量子点激发之后将量子点置于真空下。 还公开了一种处理包括量子点的部件的方法，包括向包括量子点的部件施加能量以激发量子点发光; 激发后将包含量子点的成分置于真空下。 还公开了一种处理器件的方法，该方法包括向器件施加能量以激发量子点发光; 并且在激发量子点之后将器件置于真空下。 还公开了一种用于制备器件的方法。 还公开了该方法的量子点，分量和装置。

    COMPOSITIONS, OPTICAL COMPONENT, SYSTEM INCLUDING AN OPTICAL COMPONENT, DEVICES, AND OTHER PRODUCTS
    44.
    发明申请
    COMPOSITIONS, OPTICAL COMPONENT, SYSTEM INCLUDING AN OPTICAL COMPONENT, DEVICES, AND OTHER PRODUCTS 有权
    组件，光学组件，包括光学组件，设备和其他产品的系统

    公开(公告)号：US20150086169A1

    公开(公告)日：2015-03-26

    申请号：US14500200

    申请日：2014-09-29

    Applicant: QD VISION, INC.

    Inventor： CRAIG BREEN ,  JOHN R. LINTON ,  JONATHAN S. STECKEL ,  MARSHALL COX ,  SETH COE-SULLIVAN ,  MARK COMERFORD

    IPC: C09K11/02 ,  C09K11/06 ,  G02B6/10

    CPC classification number: C09K11/025 ,  B82Y20/00 ,  C09K11/883 ,  C30B7/14 ,  C30B29/40 ,  C30B29/48 ,  C30B29/60 ,  G02B6/0023 ,  G02B6/0035 ,  G02B6/005 ,  G02B6/10 ,  Y10S977/774 ,  Y10S977/786 ,  Y10S977/95 ,  Y10T428/24893

    Abstract: The present inventions relate to optical components which include quantum confined semiconductor nanoparticles, wherein at least a portion of the nanoparticles include a ligand attached to a surface thereof, the ligand being represented by the formula: X-Sp-Z, wherein: X represents a primary amine group, a secondary amine group, a urea, a thiourea, an imidizole group, an amide group, an other nitrogen containing group, a carboxylic acid group, a phosphonic or arsonic acid group, a phosphinic or arsinic acid group, a phosphate or arsenate group, a phosphine or arsine oxide group; Sp represents a spacer group, such as a group capable of allowing a transfer of charge or an insulating group; and Z represents: (i) a reactive group capable of communicating specific chemical properties to the nanocrystal as well as provide specific chemical reactivity to the surface of the nanocrystal, and/or (ii) a group that is cyclic, halogenated, or polar a-protic. Compositions, systems, kits, films, inks, and TFEL lamps are also disclosed.

    Abstract translation: 本发明涉及包括量子限制半导体纳米颗粒的光学组件，其中至少一部分纳米颗粒包括与其表面连接的配体，该配体由下式X-Sp-Z表示，其中：X表示 伯胺基，仲胺基，脲，硫脲，亚氨基咪唑基，酰胺基，其他含氮基，羧酸基，膦酸或仲磺酸基，次膦酸或亚磺酸基，磷酸根 或砷酸盐基团，膦或胂氧化物基团; Sp表示间隔基，例如可以允许电荷转移或绝缘组的基团; 并且Z表示：（i）能够与纳米晶体传递特定化学性质的反应性基团，并且提供对纳米晶体的表面的特定的化学反应性，和/或（ii）环状，卤化的或极性的基团 -protic。 还公开了组合物，系统，试剂盒，薄膜，油墨和TFEL灯。

    METHOD OF PROCESSING QUANTUM DOT INKS
    46.
    发明申请
    METHOD OF PROCESSING QUANTUM DOT INKS 审中-公开
    加工量子墨水的方法

    公开(公告)号：US20150041714A1

    公开(公告)日：2015-02-12

    申请号：US14460131

    申请日：2014-08-14

    Applicant: QD VISION, INC.

    Inventor： KARTHIK VENKATARAMAN ,  ABHISHEK GUPTA

    IPC: C09K11/88

    CPC classification number: C09K11/883 ,  B82Y20/00 ,  B82Y30/00 ,  G02F2001/01791

    Abstract: A method of storing and transporting quantum dot formulations is provided. The method includes storing and/or transporting the quantum dot formulation under an oxygen-containing atmosphere. A sparged and degassed quantum dot formulation is also described.

    Abstract translation: 提供了存储和传输量子点制剂的方法。 该方法包括在含氧气氛下储存和/或运送量子点制剂。 还描述了鼓泡和脱气的量子点制剂。

    Quantum dot light enhancement substrate
    48.
    发明授权
    Quantum dot light enhancement substrate 有权
    量子点光增强基板

    公开(公告)号：US08759850B2

    公开(公告)日：2014-06-24

    申请号：US13849700

    申请日：2013-03-25

    Applicant: QD Vision, Inc.

    Inventor： Seth Coe-Sullivan ,  Peter T. Kazlas

    IPC: H01L29/20 ,  H01L33/00 ,  H01L31/00

    CPC classification number: H01L33/06 ,  H01L27/322 ,  H01L31/035218 ,  H01L33/04 ,  H01L33/42 ,  H01L33/50 ,  H01L33/507 ,  H01L33/58 ,  H01L33/60 ,  H01L51/5036 ,  H01L51/5088 ,  H01L51/5268 ,  H01L51/56 ,  H01L2251/5369 ,  H05B33/145 ,  Y10S977/774

    Abstract: A component including a substrate, at least one layer including a color conversion material including quantum dots disposed over the substrate, and a layer including a conductive material (e.g., indium-tin-oxide) disposed over the at least one layer. (Embodiments of such component are also referred to herein as a QD light-enhancement substrate (QD-LES).) In certain preferred embodiments, the substrate is transparent to light, for example, visible light, ultraviolet light, and/or infrared radiation. In certain embodiments, the substrate is flexible. In certain embodiments, the substrate includes an outcoupling element (e.g., a microlens array). A film including a color conversion material including quantum dots and a conductive material is also provided. In certain embodiments, a component includes a film described herein. Lighting devices are also provided. In certain embodiments, a lighting device includes a film described herein. In certain embodiments, a lighting device includes a component described herein.

    Abstract translation: 包括衬底的组件，包括包括设置在衬底上的量子点的颜色转换材料的至少一个层以及包括设置在所述至少一层上的导电材料（例如，氧化铟锡）的层。 （这种组件的实施例在本文中也称为QD光增强基板（QD-LES）。）在某些优选实施例中，基板对光是透明的，例如可见光，紫外光和/或红外辐射 。 在某些实施方案中，基底是柔性的。 在某些实施例中，衬底包括外耦合元件（例如，微透镜阵列）。 还提供了包括包括量子点和导电材料的颜色转换材料的膜。 在某些实施方案中，组分包括本文所述的膜。 还提供照明设备。 在某些实施例中，照明装置包括本文所述的膜。 在某些实施例中，照明装置包括本文所述的部件。

    METHOD FOR PREPARING SEMICONDUCTOR NANOCRYSTALS
    49.
    发明申请
    METHOD FOR PREPARING SEMICONDUCTOR NANOCRYSTALS 有权
    制备半导体纳米晶体的方法

    公开(公告)号：US20140140918A1

    公开(公告)日：2014-05-22

    申请号：US14081755

    申请日：2013-11-15

    Applicant: QD VISION, INC.

    Inventor： CRAIG BREEN ,  WENHAO LIU

    IPC: C01B19/04

    CPC classification number: C01B19/04 ,  B82Y30/00 ,  B82Y40/00 ,  C01B19/007 ,  C01P2002/84 ,  C01P2004/64 ,  C01P2006/60 ,  H01L21/0237 ,  H01L21/02428 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02601 ,  H01L21/02628

    Abstract: A method for making semiconductor nanocrystals is disclosed, the method comprising adding a secondary phosphine chalcogenide to a solution including a metal source and a liquid medium at a reaction temperature to form a reaction product comprising a semiconductor comprising a metal and a chalcogen, and quenching the reaction mixture to form quantum dots. Methods for overcoating are also disclosed. Semiconductor nanocrystals are also disclosed.

    Abstract translation: 公开了一种制备半导体纳米晶体的方法，该方法包括在反应温度下向包含金属源和液体介质的溶液中加入次膦硫属化物，以形成包含金属和硫属元素的半导体的反应产物，并淬灭 反应混合物形成量子点。 还公开了外敷方法。 还公开了半导体纳米晶体。

    DEVICE INCLUDING QUANTUM DOTS
    50.
    发明申请
    DEVICE INCLUDING QUANTUM DOTS 审中-公开
    包括量子的设备

    公开(公告)号：US20140027713A1

    公开(公告)日：2014-01-30

    申请号：US14042074

    申请日：2013-09-30

    Applicant: QD Vision, Inc.

    Inventor： Marshall Cox ,  Craig Breen ,  Zhaoqun Zhou ,  Jonathan S. Steckel

    IPC: H01L33/04 ,  H01L33/00

    CPC classification number: H01L33/04 ,  H01L21/02439 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02521 ,  H01L21/0256 ,  H01L21/02601 ,  H01L33/005 ,  H01L33/0087 ,  H01L33/06 ,  H01L33/28 ,  H01L33/30 ,  H01L51/502

    Abstract: A method for making a device, the method comprising: depositing a layer comprising quantum dots over a first electrode, the quantum dots including ligands attached to the outer surfaces thereof; treating the surface of the deposited layer comprising quantum dots to remove the exposed ligands; and forming a device layer thereover. Also disclosed is a device made in accordance with the disclosed method. Another aspect of the invention relates to a device comprising a first electrode and a second electrode, and a layer comprising quantum dots between the two electrodes, the layer comprising quantum dots deposited from a dispersion that have been treated to remove exposed ligands after formation of the layer in the device. Another aspect of the invention relates to a device comprising a first electrode and a second electrode, a layer comprising a first inorganic semiconductor material disposed between the first and second electrodes, and a plurality of quantum dots disposed between the first and second electrodes, the outer surface of the quantum dots comprising a second inorganic semiconductor material, wherein the composition of the first inorganic semiconductor material and the second inorganic semiconductor material is the same (without regard to any ligands on the outer surface of the quantum dot).

    Abstract translation: 一种制造器件的方法，所述方法包括：在第一电极上沉积包含量子点的层，所述量子点包括附着于其外表面的配体; 处理包含量子点的沉积层的表面以除去暴露的配体; 并在其上形成器件层。 还公开了根据所公开的方法制造的装置。 本发明的另一方面涉及一种包括第一电极和第二电极的装置，以及在两个电极之间包含量子点的层，该层包括从分散体沉积的量子点，所述分散体在形成之后已被处理以除去暴露的配体 设备中的层。 本发明的另一方面涉及一种包括第一电极和第二电极的装置，包括设置在第一和第二电极之间的第一无机半导体材料的层和设置在第一和第二电极之间的多个量子点，外部 包括第二无机半导体材料的量子点的表面，其中第一无机半导体材料和第二无机半导体材料的组成相同（不考虑量子点的外表面上的任何配体）。

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