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    DISLOCATION REDUCTION IN NON-POLAR III-NITRIDE THIN FILMS
    46.
    发明申请
    DISLOCATION REDUCTION IN NON-POLAR III-NITRIDE THIN FILMS 有权
    非极性III型氮化物薄膜中的分离减少

    公开(公告)号：US20080135853A1

    公开(公告)日：2008-06-12

    申请号：US11852908

    申请日：2007-09-10

    Applicant: Michael D. Craven ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

    Inventor： Michael D. Craven ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

    IPC: H01L29/15 ,  H01L21/20

    CPC classification number: H01L21/0237 ,  C30B25/02 ,  C30B25/04 ,  C30B25/105 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  C30B29/605 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647

    Abstract: Lateral epitaxial overgrowth of non-polar III-nitride seed layers reduces threading dislocations in the non-polar III-nitride thin films. First, a thin patterned dielectric mask is applied to the seed layer. Second, a selective epitaxial regrowth is performed to achieve a lateral overgrowth based on the patterned mask. Upon regrowth, the non-polar III-nitride films initially grow vertically through openings in the dielectric mask before laterally overgrowing the mask in directions perpendicular to the vertical growth direction. Threading dislocations are reduced in the overgrown regions by (1) the mask blocking the propagation of dislocations vertically into the growing film and (2) the bending of dislocations through the transition from vertical to lateral growth.

    Abstract translation: 非极性III族氮化物种子层的横向外延生长减少了非极性III族氮化物薄膜中的穿透位错。 首先，将薄的图案化电介质掩模施加到种子层。 其次，进行选择性外延再生长以实现基于图案化掩模的横向过度生长。 在再生长时，非极性III族氮化物膜在垂直于垂直生长方向的方向上横向过度生长掩模之前，首先垂直于介电掩模中的开口生长。 通过（1）掩模阻止位错垂直进入生长膜的扩散，以及（2）通过从垂直向侧向生长的过渡的位错弯曲，使得穿越位错在过度生长的区域中减少。

    Multi element, multi color solid state LED/laser
    48.
    发明授权
    Multi element, multi color solid state LED/laser 有权
    多元素，多色固态LED /激光

    公开(公告)号：US07202506B1

    公开(公告)日：2007-04-10

    申请号：US09528262

    申请日：2000-03-17

    Applicant: Steven P. DenBaars ,  Eric J. Tarsa ,  Michael Mack ,  Bernd Keller ,  Brian Thibeault

    Inventor： Steven P. DenBaars ,  Eric J. Tarsa ,  Michael Mack ,  Bernd Keller ,  Brian Thibeault

    IPC: H01L33/00

    CPC classification number: H01L33/30 ,  H01L25/0756 ,  H01L27/15 ,  H01L27/153 ,  H01L33/08 ,  H01L33/343 ,  H01L33/502 ,  H01L33/504 ,  H01L2924/0002 ,  H01S3/0627 ,  H01S3/0941 ,  H01S3/09415 ,  H01S3/1623 ,  H01S3/1628 ,  H01S5/0206 ,  H01S5/0287 ,  H01S5/1032 ,  H01S5/183 ,  H01S5/18361 ,  H01S5/32341 ,  H01L2924/00

    Abstract: A light emitting diode (LED) grown on a substrate doped with one or more rare earth or transition element. The dopant ions absorb some or all of the light from the LED's active layer, pumping the electrons on the dopant ion to a higher energy state. The electrons are naturally drawn to their equilibrium state and they emit light at a wavelength that depends on the type of dopant ion. The invention is particularly applicable to nitride based LEDs emitting UV light and grown on a sapphire substrate doped with chromium. The chromium ions absorb the UV light, exciting the electrons on ions to a higher energy state. When they return to their equilibrium state they emit red light and some of the red light will emit from the LED's surface. The LED can also have active layers that emit green and blue and UV light, such that the LED emits green, blue, red light and UV light which combines to create white light. Alternatively, it can have one active layer and grown on a sapphire substrate doped with Cr, Ti, and Co such that the substrate absorbs the UV light and emits blue, green, and red light. The invention is also capable of providing a tunable LED over a variety of color shades. The invention is also applicable to solid state laser having one or more active layers emitting UV light with the laser grown on a sapphire substrate doped with one or more rare earth or transition elements.

    Abstract translation: 在掺杂有一种或多种稀土或过渡元素的衬底上生长的发光二极管（LED）。 掺杂剂离子吸收来自LED有源层的一些或全部光，将掺杂剂离子上的电子泵送到更高的能量状态。 电子被自然地吸收到它们的平衡状态，并且它们以取决于掺杂剂离子的类型的波长发光。 本发明特别适用于发射紫外光并在掺杂有铬的蓝宝石衬底上生长的基于氮化物的LED。 铬离子吸收紫外光，激发离子上的电子到更高的能量状态。 当它们回到它们的平衡状态时，它们发出红光，并且一些红光将从LED的表面发射。 LED还可以具有发射绿色和蓝色和紫外线的有源层，使得LED发射绿色，蓝色，红色光和UV光，其组合以产生白光。 或者，它可以具有一个活性层并在掺杂有Cr，Ti和Co的蓝宝石衬底上生长，使得衬底吸收UV光并发出蓝色，绿色和红色光。 本发明还能够在各种色调上提供可调LED。 本发明也适用于具有一个或多个发射紫外光的有源层的固体激光器，其中激光生长在掺杂有一种或多种稀土或过渡元素的蓝宝石衬底上。

    Method for making cleaved facets for lasers fabricated with gallium nitride and other noncubic materials
    49.
    发明授权
    Method for making cleaved facets for lasers fabricated with gallium nitride and other noncubic materials 失效
    用氮化镓和其他非耻骨材料制造的激光器的切割面的方法

    公开(公告)号：US5985687A

    公开(公告)日：1999-11-16

    申请号：US630675

    申请日：1996-04-12

    Applicant: John E. Bowers ,  R. Kehl Sink ,  Steven P. Denbaars

    Inventor： John E. Bowers ,  R. Kehl Sink ,  Steven P. Denbaars

    IPC: H01S5/02 ,  H01S5/323 ,  H01L21/00

    CPC classification number: H01S5/0201 ,  H01L2221/68363 ,  H01S5/0202 ,  H01S5/32341 ,  Y10S438/967 ,  Y10S438/977

    Abstract: Optically flat cleaved facet mirrors are fabricated in GaN epitaxial films grown on sapphire by wafer fusing a GaN film with a sapphire substrate to a cubic substrate such as an InP or GaAs substrate. The sapphire substrate may then partially or entirely removed by lapping, dry etching, or wet etching away a sacrificial layer disposed in the interface between the sapphire substrate and the GaN layer. Thereafter, the cubic InP or GaN substrate is cleaved to produce the cubic crystal facet parallel to the GaN layer in which active devices are fabricated for use in lasers, photodetectors, light emitting diodes and other optoelectronic devices.

    Abstract translation: 通过晶片将蓝宝石衬底的GaN膜与InP或GaAs衬底等立方体衬底熔合而制造在蓝宝石上生长的GaN外延膜中的光学平面切面镜。 然后可以通过研磨，干蚀刻或湿蚀刻去除设置在蓝宝石衬底和GaN层之间的界面中的牺牲层来部分或全部去除蓝宝石衬底。 此后，立方InP或GaN衬底被切割以产生平行于GaN层的立方晶体晶面，其中制造用于激光器，光电检测器，发光二极管和其它光电子器件的有源器件。

    Apparatus for growing metal oxides using organometallic vapor phase epitaxy
    50.
    发明授权
    Apparatus for growing metal oxides using organometallic vapor phase epitaxy 失效
    使用有机金属气相外延生长金属氧化物的装置

    公开(公告)号：US5458086A

    公开(公告)日：1995-10-17

    申请号：US136215

    申请日：1993-10-13

    Applicant: Eric J. Smith ,  Steven P. DenBaars ,  Boo J. L. Nilsson

    Inventor： Eric J. Smith ,  Steven P. DenBaars ,  Boo J. L. Nilsson

    IPC: C23C16/40 ,  C30B25/02 ,  C30B35/00 ,  H01L39/24

    CPC classification number: C30B25/02 ,  C30B29/22 ,  Y10T117/10

    Abstract: The methods and apparatus disclosed enable controlled growth of multicomponent metal oxide thin films, including high temperature superconducting (HTS) thin films, which are uniform and reproducible. The method and apparatus enable a controlled flow and pressure of a gaseous phase of metal containing molecules to be introduced into a reaction chamber, or into an analysis chamber, or into both. The flow into the reaction chamber enables deposition of metal oxides on a substrate and, therefore, growth of multicomponent metal oxide thin films, including HTS thin films, on the substrate. The flow into the analysis chamber enables compositional analysis of the gas. The apparatus also allows adjustment of the gaseous phase flow and pressure into the reaction chamber based upon the results of the compositional analysis. In one aspect of this invention, a heating mantle provides substantially uniform heating throughout the apparatus.

    Abstract translation: 所公开的方法和装置使得可以控制生长多组分金属氧化物薄膜，包括高温超导（HTS）薄膜，其均匀且可再现。 所述方法和装置使得能够将含有金属的分子的气相的受控流量和压力引入反应室或分析室，或两者。 进入反应室的流动使金属氧化物沉积在基板上，并因此在衬底上生长多组分金属氧化物薄膜，包括HTS薄膜。 进入分析室的流动使得能够对气体进行组合分析。 该装置还允许基于组成分析的结果将气相流和压力调节到反应室中。 在本发明的一个方面，加热套在整个装置中提供基本均匀的加热。

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