公开(公告)号：US07393710B2

公开(公告)日：2008-07-01

申请号：US11247935

申请日：2005-10-11

Applicant: Jin Chul Kim ,  Su Yeol Lee ,  Chang Zoo Kim ,  Sang Heon Han ,  Keun Man Song ,  Tae Jun Kim ,  Seok Beom Choi

Inventor： Jin Chul Kim ,  Su Yeol Lee ,  Chang Zoo Kim ,  Sang Heon Han ,  Keun Man Song ,  Tae Jun Kim ,  Seok Beom Choi

IPC: H01L21/00

CPC classification number: H01S5/4031 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01S5/2231 ,  H01S5/4087 ,  H01S2304/04

Abstract: The present invention relates to a two-wavelength semiconductor laser device, more particularly, to a fabrication method of a multi-wavelength semiconductor laser device. In this method, a substrate having an upper surface separated into at least first and second areas is provided. Then, a first dielectric mask on the substrate is formed to expose only the first area. Then, epitaxial layers for a first semiconductor laser are grown on the first area of the substrate. Then, a second dielectric mask on the substrate is formed to expose only the second area. Then, epitaxial layers for a second semiconductor laser are grown on the second area of the substrate.

Abstract translation: 本发明涉及一种双波长半导体激光器件，更具体地涉及一种多波长半导体激光器件的制造方法。 在该方法中，提供了具有分隔成至少第一和第二区域的上表面的基板。 然后，形成基板上的第一电介质掩模，仅露出第一区域。 然后，在衬底的第一区域上生长用于第一半导体激光器的外延层。 然后，形成基板上的第二电介质掩模，仅露出第二区域。 然后，在衬底的第二区域上生长用于第二半导体激光器的外延层。

公开(公告)号：US20080042149A1

公开(公告)日：2008-02-21

申请号：US11692568

申请日：2007-03-28

Applicant: Sang Ho YOON ,  Su Yeol LEE ,  Doo Go BAIK ,  Seok Beom CHOI ,  Tae Sung JANG ,  Jong Gun WOO

Inventor： Sang Ho YOON ,  Su Yeol LEE ,  Doo Go BAIK ,  Seok Beom CHOI ,  Tae Sung JANG ,  Jong Gun WOO

IPC: H01L33/00

CPC classification number: H01L33/22 ,  H01L33/0079 ,  H01L33/20

Abstract: A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.

Abstract translation: 垂直氮化物基半导体LED包括结构支撑层; 形成在结构支撑层上的p电极; 形成在p电极上的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层; 形成在有源层上的n型氮化物半导体层; 形成在n型氮化物半导体层的一部分上的n电极; 以及形成在其上未形成有n电极的n型氮化物半导体层的区域上的缓冲层，其上形成有凹凸。 与n电极接触的n型氮化物半导体层的表面是平坦的。

公开(公告)号：US08969895B2

公开(公告)日：2015-03-03

申请号：US13225979

申请日：2011-09-06

Applicant: Jae Yoon Kim ,  Jin Bock Lee ,  Seok Min Hwang ,  Su Yeol Lee

Inventor： Jae Yoon Kim ,  Jin Bock Lee ,  Seok Min Hwang ,  Su Yeol Lee

IPC: H01L33/00 ,  H01L33/40 ,  H01L33/38 ,  H01L33/42 ,  H01L33/32

CPC classification number: H01L33/005 ,  H01L33/32 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L2933/0016 ,  H01L2933/0058

Abstract: A semiconductor light emitting device includes: a light emission structure in which a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer are sequentially stacked; a first electrode formed on the first conductive semiconductor layer; an insulating layer formed on the second conductive semiconductor layer and made of a transparent material; a reflection unit formed on the insulating layer and reflecting light emitted from the active layer; a second electrode formed on the reflection unit; and a transparent electrode formed on the second conductive semiconductor layer, the transparent electrode being in contact with the insulating layer and the second electrode.

Abstract translation: 一种半导体发光器件包括：发光结构，其中第一导电半导体层，有源层和第二导电半导体层依次层叠; 形成在所述第一导电半导体层上的第一电极; 形成在所述第二导电半导体层上并由透明材料制成的绝缘层; 反射单元，形成在所述绝缘层上并反射从所述有源层发射的光; 形成在反射单元上的第二电极; 以及形成在所述第二导电半导体层上的透明电极，所述透明电极与所述绝缘层和所述第二电极接触。

公开(公告)号：US20130240937A1

公开(公告)日：2013-09-19

申请号：US13820459

申请日：2011-09-01

Applicant: Seung Wan Chae ,  Tae Hun Kim ,  Su Yeol Lee ,  Jin Bock Lee ,  Jin Hwan Kim ,  Seung Jae Lee ,  Bo Kyoung Kim ,  Jong Ho Lee

Inventor： Seung Wan Chae ,  Tae Hun Kim ,  Su Yeol Lee ,  Jin Bock Lee ,  Jin Hwan Kim ,  Seung Jae Lee ,  Bo Kyoung Kim ,  Jong Ho Lee

IPC: H01L33/46

CPC classification number: H01L33/46 ,  H01L24/32 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/15788 ,  H01L2924/00014 ,  H01L2924/00

Abstract: There is provided a semiconductor light emitting diode (LED) chip including: a semiconductor light emitting diode unit including a light-transmissive substrate, and a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially formed on an upper surface of the light-transmissive substrate; a rear reflective laminate including an auxiliary optical layer formed on a lower surface of the light-transmissive substrate and made of a material having a predetermined refractive index and a metal reflective film formed on a lower surface of the auxiliary optical layer; and a bonding laminate provided on a lower surface of the rear reflective laminate and including a bonding metal layer made of a eutectic metal material and an anti-diffusion film formed to prevent diffusion of elements between the bonding metal layer and the metal reflective film.

Abstract translation: 提供了一种半导体发光二极管（LED）芯片，其包括：半导体发光二极管单元，包括透光基板，以及顺序形成的第一导电型半导体层，有源层和第二导电类型半导体层 在所述透光性基板的上表面上; 后反光层叠体，其包括形成在所述透光性基板的下表面上并由具有预定折射率的材料制成的辅助光学层和形成在所述辅助光学层的下表面上的金属反射膜; 以及设置在后反射层叠体的下表面上并包括由共晶金属材料制成的接合金属层和形成为防止元件在接合金属层和金属反射膜之间扩散的防扩散膜的接合层压体。

公开(公告)号：US08487334B2

公开(公告)日：2013-07-16

申请号：US13279782

申请日：2011-10-24

Applicant: Seung Wan Chae ,  Tae Hun Kim ,  Su Yeol Lee ,  Sung Tae Kim ,  Jong Ho Lee

Inventor： Seung Wan Chae ,  Tae Hun Kim ,  Su Yeol Lee ,  Sung Tae Kim ,  Jong Ho Lee

IPC: H01L33/00

CPC classification number: H01L33/46 ,  H01L33/20

Abstract: A semiconductor light emitting device includes: a light emitting diode unit including a light-transmissive substrate having a face sloped upwardly at a lower edge thereof. A rear reflective lamination body is formed on the lower face and the surrounding sloped face of the light-transmissive substrate. The rear reflective lamination body includes an optical auxiliary layer and a metal reflective film formed on a lower face of the optical auxiliary layer. A junction lamination body is provided to a lower face of the rear reflective lamination body. The junction lamination body including a junction metal layer made of a eutectic metal material and a diffusion barrier film.

Abstract translation: 一种半导体发光器件包括：发光二极管单元，其包括具有在其下边缘向上倾斜的面的透光基板。 背光层叠体形成在透光性基板的下表面和周边的倾斜面上。 后反光层叠体包括光辅助层和形成在光辅助层的下表面上的金属反射膜。 在后反光层叠体的下表面设置有结层叠体。 结合层叠体包括由共晶金属材料制成的结金属层和扩散阻挡膜。

公开(公告)号：US08198114B2

公开(公告)日：2012-06-12

申请号：US12909297

申请日：2010-10-21

Applicant: Sang Ho Yoon ,  Su Yeol Lee ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

Inventor： Sang Ho Yoon ,  Su Yeol Lee ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

IPC: H01L21/56

CPC classification number: H01L33/22 ,  H01L33/0079 ,  H01L33/20

Abstract: A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.

Abstract translation: 垂直氮化物基半导体LED包括结构支撑层; 形成在结构支撑层上的p电极; 形成在p电极上的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层; 形成在有源层上的n型氮化物半导体层; 形成在n型氮化物半导体层的一部分上的n电极; 以及形成在其上未形成有n电极的n型氮化物半导体层的区域上的缓冲层，其上形成有凹凸。 与n电极接触的n型氮化物半导体层的表面是平坦的。

公开(公告)号：US20110210352A1

公开(公告)日：2011-09-01

申请号：US13034279

申请日：2011-02-24

Applicant: Su Yeol LEE ,  Yong Tae KIM ,  Jin Bock LEE ,  Gi Bum KIM

Inventor： Su Yeol LEE ,  Yong Tae KIM ,  Jin Bock LEE ,  Gi Bum KIM

IPC: H01L33/08

CPC classification number: H01L27/156 ,  H01L24/24 ,  H01L27/153 ,  H01L33/30 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A semiconductor light emitting device includes a substrate; a plurality of light emitting cells disposed on the top surface of the substrate, the light emitting cells each having an active layer; a plurality of connection parts formed on the substrate with the light emitting cells formed thereon to connect the light emitting cells in a parallel or series-parallel configuration; and an insulation layer formed on the surface of the light emitting cell to prevent an undesired connection between the connection parts and the light emitting cell. The light emitting cells comprise at least one defective light emitting cell, and at least one of the connection parts related to the defective light emitting cell is disconnected.

Abstract translation: 一种半导体发光器件，包括：衬底; 多个发光单元，设置在所述基板的上表面上，所述发光单元各自具有有源层; 形成在所述基板上的多个连接部分，其上形成有发光单元，以将所述发光单元以并联或串联平行结构连接; 以及形成在发光单元的表面上的绝缘层，以防止连接部分和发光单元之间的不期望的连接。 发光单元包括至少一个有缺陷的发光单元，并且与缺陷发光单元有关的至少一个连接部分断开。

公开(公告)号：US07872276B2

公开(公告)日：2011-01-18

申请号：US11742818

申请日：2007-05-01

Applicant: Su Yeol Lee ,  Bang Won Oh ,  Doo Go Baik ,  Tae Sung Jang ,  Jong Gun Woo ,  Seok Beom Choi ,  Sang Ho Yoon ,  Dong Woo Kim ,  In Tae Yeo

Inventor： Su Yeol Lee ,  Bang Won Oh ,  Doo Go Baik ,  Tae Sung Jang ,  Jong Gun Woo ,  Seok Beom Choi ,  Sang Ho Yoon ,  Dong Woo Kim ,  In Tae Yeo

IPC: H01L33/00

CPC classification number: H01L33/387 ,  H01L33/20 ,  H01L33/22 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of manufacturing a vertical GaN-based LED comprises forming a light emission structure in which an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer are sequentially laminated on a substrate; etching the light emission structure such that the light emission structure is divided into units of LED; forming a p-electrode on each of the divided light emission structures; filling a non-conductive material between the divided light emission structures; forming a metal seed layer on the resulting structure; forming a first plated layer on the metal seed layer excluding a region between the light emission structures; forming a second plated layer on the metal seed layer between the first plated layers; separating the substrate from the light emission structures; removing the non-conductive material between the light emission structures exposed by separating the substrate; forming an n-electrode on the n-type GaN-based semiconductor layer; and removing portions of the metal seed layer and the second plated layer between the light emission structures.

Abstract translation: 制造垂直GaN基LED的方法包括：形成其中n型GaN基半导体层，有源层和p型GaN基半导体层依次层压在基板上的发光结构; 蚀刻发光结构，使得发光结构被分为LED单元; 在每个划分的发光结构上形成p电极; 在分开的发光结构之间填充非导电材料; 在所得结构上形成金属种子层; 在所述金属种子层上形成除了所述发光结构之间的区域的第一镀层; 在所述第一镀层之间的所述金属种子层上形成第二镀层; 将衬底与发光结构分离; 去除通过分离衬底而暴露的发光结构之间的非导电材料; 在n型GaN基半导体层上形成n电极; 以及去除所述发光结构之间的所述金属种子层和所述第二镀层的部分。

公开(公告)号：US07727787B2

公开(公告)日：2010-06-01

申请号：US11976791

申请日：2007-10-29

Applicant: Tae Jun Kim ,  Su Yeol Lee ,  Dong Woo Kim ,  Hyun Ju Park ,  Hyoun Soo Shin ,  In Joon Pyeon

Inventor： Tae Jun Kim ,  Su Yeol Lee ,  Dong Woo Kim ,  Hyun Ju Park ,  Hyoun Soo Shin ,  In Joon Pyeon

IPC: H01L21/304

CPC classification number: H01L33/0079 ,  H01L33/22 ,  H01L33/32

Abstract: There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.

Abstract translation: 提供了一种制造氮化物半导体发光器件的方法和通过该方法制造的氮化物半导体发光器件，该方法包括：通过依次生长第一导电氮化物层，有源层和第二导电性来形成发光结构 在氮化物单晶生长的预备衬底上形成氮化物层; 根据最终发光器件的尺寸分离发光结构; 在所述发光结构上形成导电基板; 抛光初步衬底的底面以减小初步衬底的厚度; 通过机加工初步底材形成不均匀的表面结构; 选择性地去除所述初步衬底以暴露所述第一导电型氮化物层的部分; 以及通过选择性地去除所述预备衬底而在所述第一导电型氮化物层的部分上形成电极。

公开(公告)号：US20080093618A1

公开(公告)日：2008-04-24

申请号：US11889562

申请日：2007-08-14

Applicant: Su Yeol Lee ,  Sang Ho Yoon ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

Inventor： Su Yeol Lee ,  Sang Ho Yoon ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

IPC: H01L33/00

CPC classification number: H01L33/32 ,  H01L33/14 ,  H01L33/40

Abstract: Provided is a vertical LED including an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having a surface coming in contact with the n-electrode, the surface having a Ga+N layer containing a larger amount of Ga than that of N; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.

Abstract translation: 提供包括n电极的垂直LED; 形成在n电极下面的n型GaN层，所述n型GaN层具有与n电极接触的表面，所述表面具有含有较大量的Ga + N层 的Ga; 形成在n型GaN层下面的有源层; 形成在有源层下面的p型GaN层; 形成在p型GaN层下面的p电极; 以及在p电极下面形成的结构支撑层。