公开(公告)号：US20080272472A1

公开(公告)日：2008-11-06

申请号：US12216363

申请日：2008-07-02

申请人： Toshiyuki Hata ,  Hiroshi Sato

发明人： Toshiyuki Hata ,  Hiroshi Sato

IPC分类号： H01L23/02

CPC分类号： H01L24/83 ,  H01L23/49562 ,  H01L24/11 ,  H01L24/13 ,  H01L24/33 ,  H01L2224/0401 ,  H01L2224/0558 ,  H01L2224/05624 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/13 ,  H01L2224/13144 ,  H01L2224/16245 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/32245 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/83139 ,  H01L2224/8314 ,  H01L2224/83192 ,  H01L2224/838 ,  H01L2224/84138 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0781 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/0105 ,  H01L2924/00014 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00012

摘要： A thin semiconductor device difficult to cause breakage of a semiconductor chip is disclosed. The semiconductor device comprises a sealing member, a semiconductor chip positioned within the sealing member, the semiconductor chip having a source electrode and a gate electrode on a first main surface thereof and a drain electrode on a second main surface as a back surface thereof, a first electrode plate (drain electrode plate) having an upper surface and a lower surface, a part of the upper surface of the first electrode plate being exposed to an upper surface of the sealing member and the lower surface portions of end portions of the first electrode plate being exposed to a lower surface of the sealing member, and second electrode plates (source electrode plate and gate electrode plate) each having a lower surface exposed to the lower surface of the sealing member and an upper surface positioned within the sealing member, wherein the drain electrode of the semiconductor chip is electrically connected to the drain electrode plate through an adhesive, one or plural stud type bump electrodes are formed by gold wire on the surface of each of the source electrode and gate electrode of the semiconductor chip, the bump electrode(s) being covered with an electrically conductive adhesive, the bump electrode(s) and the source and gate electrode plates are electrically connected with each other through the adhesive, and the bump electrode(s) and the source and gate electrode plates are not in contact with each other.

公开(公告)号：US20080268577A1

公开(公告)日：2008-10-30

申请号：US12164625

申请日：2008-06-30

申请人： Hidemasa KAGII ,  Akira Muto ,  Ichio Shimizu ,  Katsuo Arai ,  Hiroshi Sato ,  Hiroyuki Nakamura ,  Masahiko Osaka ,  Takuya Nakajo ,  Keiichi Okawa ,  Hiroi Oka

发明人： Hidemasa KAGII ,  Akira Muto ,  Ichio Shimizu ,  Katsuo Arai ,  Hiroshi Sato ,  Hiroyuki Nakamura ,  Masahiko Osaka ,  Takuya Nakajo ,  Keiichi Okawa ,  Hiroi Oka

IPC分类号： H01L21/00

CPC分类号： H01L23/24 ,  H01L21/52 ,  H01L23/488 ,  H01L23/49562 ,  H01L24/36 ,  H01L24/40 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/0558 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/16 ,  H01L2224/16245 ,  H01L2224/32245 ,  H01L2224/40225 ,  H01L2224/73153 ,  H01L2224/73253 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00014

摘要： A semiconductor chip is sealed by resin without covering an outer terminal of a semiconductor device having a power transistor. A semiconductor chip having a power transistor is housed within a recess of a metal cap while a drain electrode on a first surface of the semiconductor chip is bonded to a bottom of the recess via a connection material. A gate electrode and a source electrode are formed on a second surface opposite to the first surface of the semiconductor chip, and the gate electrode and the source electrode are bonded with metal plate terminals 6G, 6S via connection materials 5b, 5c. In addition, the semiconductor chip is sealed by a resin sealing body with mounting-surfaces of the metal plate terminals 6G, 6S being exposed. Mounting surfaces of the metal plate terminals 6G, 6S and a third part of the metal cap are bonded to electrodes on a mounting board 10 via connection materials 5e, 5f and 5g.

摘要翻译： 半导体芯片由树脂密封而不覆盖具有功率晶体管的半导体器件的外部端子。 具有功率晶体管的半导体芯片容纳在金属盖的凹部内，而半导体芯片的第一表面上的漏电极经由连接材料接合到凹部的底部。 在与半导体芯片的第一表面相对的第二表面上形成栅电极和源电极，并且栅电极和源电极通过连接材料5b，5c连接金属板端子6G，6S 。 此外，半导体芯片由金属板端子6G，6S的露出的安装面的树脂密封体密封。 金属板端子6G，6S和金属盖的第三部分的安装表面通过连接材料5e，5f和5g与安装板10上的电极接合。

公开(公告)号：US20080249819A1

公开(公告)日：2008-10-09

申请号：US12046601

申请日：2008-03-12

申请人： Hiroshi Sato

发明人： Hiroshi Sato

IPC分类号： G06Q10/00 ,  G06F17/30 ,  G06F17/40

CPC分类号： G06Q10/06 ,  G06Q10/0631 ,  G06Q10/06395

摘要： To provide a method of an a system for supporting creation of improvement structure to reduce member costs, assembly costs, and losses associated with defective assemblies of a product. Parts constituting a product are analyzed into functions, attributes, assembly operations, and assembly attributes; on the basis of the difference between the member and assembly costs due to presence or absence of these elements, elements requiring improvement are extracted; and improvement guidelines are created using similar improvement examples in the past. It is possible to present improvement guidelines in structure to reduce the member costs and the assembly costs.

摘要翻译： 到用于支撑结构的改进的创建，以减少构件成本，组装成本，并与产品的缺陷组件相关的损耗提供的系统的方法。 构成产品的部件分析为功能，属性，装配操作和装配属性; 由于存在或不存在这些元素的部件和组装成本之间的差的基础上，需要改进的元素被提取; 并且使用类似的改进例子来创建改进指南。 这是可能存在于结构改进准则，以降低部件成本和组装成本。

公开(公告)号：US20080169537A1

公开(公告)日：2008-07-17

申请号：US12046741

申请日：2008-03-12

申请人： Ryoichi KAJIWARA ,  Masahiro Koizumi ,  Toshiaki Morita ,  Kazuya Takahashi ,  Munehisa Kishimoto ,  Shigeru Ishii ,  Toshinori Hirashima ,  Yasushi Takahashi ,  Toshiyuki Hata ,  Hiroshi Sato ,  Keiichi Ookawa

发明人： Ryoichi KAJIWARA ,  Masahiro Koizumi ,  Toshiaki Morita ,  Kazuya Takahashi ,  Munehisa Kishimoto ,  Shigeru Ishii ,  Toshinori Hirashima ,  Yasushi Takahashi ,  Toshiyuki Hata ,  Hiroshi Sato ,  Keiichi Ookawa

IPC分类号： H01L23/495

CPC分类号： H01L23/49555 ,  H01L21/4814 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L23/28 ,  H01L23/3107 ,  H01L23/495 ,  H01L23/4952 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/49582 ,  H01L24/11 ,  H01L24/13 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/81 ,  H01L24/83 ,  H01L24/84 ,  H01L24/97 ,  H01L29/7833 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/16245 ,  H01L2224/29011 ,  H01L2224/29015 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/73253 ,  H01L2224/75251 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2224/83101 ,  H01L2224/83138 ,  H01L2224/83191 ,  H01L2224/83825 ,  H01L2224/8385 ,  H01L2224/83851 ,  H01L2224/84801 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H05K3/3426 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/01049 ,  H01L2924/01083 ,  H01L2224/29139 ,  H01L2924/3512 ,  H01L2224/48 ,  H01L2924/00012

摘要： A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.

摘要翻译： 一种半导体器件，其中第一金属部件经由包含第一贵金属的第一金属体接合到半导体元件的第一电极，并且第二金属部件经由包含第二贵金属的第二金属体接合到第二电极 金属。

公开(公告)号：US20080117310A1

公开(公告)日：2008-05-22

申请号：US11935803

申请日：2007-11-06

申请人： Yuji Kaneda ,  Masakazu Matsugu ,  Katsuhiko Mori ,  Hiroshi Sato

发明人： Yuji Kaneda ,  Masakazu Matsugu ,  Katsuhiko Mori ,  Hiroshi Sato

IPC分类号： H04N5/76

CPC分类号： H04N5/772 ,  H04N5/23212 ,  H04N5/23216 ,  H04N5/23219 ,  H04N5/23222 ,  H04N5/235 ,  H04N5/85

摘要： An image capturing apparatus includes an image input unit which photo-electrically converts an object image to generate an image signal, a status determination unit which determines an object status in an image generated by the image input unit, an automatic image capturing instruction unit which starts an automatic image capturing operation as an operation to automatically store the image generated by the image input unit in the first storage unit when the object status determined by the status determination unit satisfies a predetermined automatic image capturing condition, and a shooting control unit which automatically stores the image generated by the image input unit in the second storage unit when the object status does not satisfy the automatic image capturing condition even upon the lapse of a predetermined time after the automatic image capturing instruction unit designates the automatic image capturing operation.

摘要翻译： 一种摄像装置包括：图像输入单元，其对物体图像进行光电转换以产生图像信号;状态确定单元，确定由图像输入单元生成的图像中的对象状态;自动图像捕获指令单元，其启动 自动图像拍摄操作，用于当由状态确定单元确定的对象状态满足预定的自动图像拍摄条件时，自动将由图像输入单元生成的图像存储在第一存储单元中的操作;以及拍摄控制单元，其自动存储 当自动图像拍摄指令单元指定自动图像捕获操作时，即使经过了预定时间，当物体状态不满足自动图像拍摄条件时，由第二存储单元中的图像输入单元生成的图像。

公开(公告)号：US20080080064A1

公开(公告)日：2008-04-03

申请号：US11984383

申请日：2007-11-16

申请人： Shoji Kogo ,  Masae Sato ,  Susumu Yamaguchi ,  Hiroshi Sato ,  Yuuichi Atarashi

发明人： Shoji Kogo ,  Masae Sato ,  Susumu Yamaguchi ,  Hiroshi Sato ,  Yuuichi Atarashi

IPC分类号： G02B15/14

CPC分类号： G02B3/14 ,  G02B26/004

摘要： In this invention, to provide a compact zoom lens having a small number of optical element groups to be driven and a simple moving mechanism, at least one of a plurality of optical element groups arranged in the lens system includes a refractive power variable element of a transmission type which has a compensation function to correct focus movement caused by zooming and a focus function to correct focus movement caused by a variation in inter-object distance. The refractive power variable element is a liquid optical element including a first liquid having a conductivity or a polarity and a second liquid which is not mixed with the first liquid, the first liquid and the second liquid being enclosed in a container fluid-tight so as to define an interface therebetween having a predetermined shape, the liquid optical element being arranged such that a refractive power thereof is adjusted by changing a curvature of the interface.

摘要翻译： 在本发明中，为了提供具有少量待驱动的光学元件组的简单变焦透镜和简单的移动机构，布置在透镜系统中的多个光学元件组中的至少一个包括折射力可变元件 具有用于校正由变焦引起的焦点移动的补偿功能的传播类型和用于校正由物体间距离变化引起的聚焦移动的聚焦功能。 折射力可变元件是包括具有导电性或极性的第一液体和不与第一液体混合的第二液体的液体光学元件，第一液体和第二液体被密封在容器中，以便流体密封 为了在其间限定具有预定形状的界面，液体光学元件被布置成通过改变界面的曲率来调节其屈光力。

公开(公告)号：US07342267B2

公开(公告)日：2008-03-11

申请号：US11415290

申请日：2006-05-02

申请人： Ryoichi Kajiwara ,  Masahiro Koizumi ,  Toshiaki Morita ,  Kazuya Takahashi ,  Munehisa Kishimoto ,  Shigeru Ishii ,  Toshinori Hirashima ,  Yasushi Takahashi ,  Toshiyuki Hata ,  Hiroshi Sato ,  Keiichi Ookawa

发明人： Ryoichi Kajiwara ,  Masahiro Koizumi ,  Toshiaki Morita ,  Kazuya Takahashi ,  Munehisa Kishimoto ,  Shigeru Ishii ,  Toshinori Hirashima ,  Yasushi Takahashi ,  Toshiyuki Hata ,  Hiroshi Sato ,  Keiichi Ookawa

IPC分类号： H01L29/94 ,  H01L21/00 ,  H01R9/00

CPC分类号： H01L23/49555 ,  H01L21/4814 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L23/28 ,  H01L23/3107 ,  H01L23/495 ,  H01L23/4952 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/49582 ,  H01L24/11 ,  H01L24/13 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/81 ,  H01L24/83 ,  H01L24/84 ,  H01L24/97 ,  H01L29/7833 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/16245 ,  H01L2224/29011 ,  H01L2224/29015 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/73253 ,  H01L2224/75251 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2224/83101 ,  H01L2224/83138 ,  H01L2224/83191 ,  H01L2224/83825 ,  H01L2224/8385 ,  H01L2224/83851 ,  H01L2224/84801 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H05K3/3426 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/01049 ,  H01L2924/01083 ,  H01L2224/29139 ,  H01L2924/3512 ,  H01L2224/48 ,  H01L2924/00012

摘要： A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.

摘要翻译： 一种半导体器件，其中第一金属部件经由包含第一贵金属的第一金属体接合到半导体元件的第一电极，并且第二金属部件经由包含第二贵金属的第二金属体接合到第二电极 金属。

公开(公告)号：US20080019627A1

公开(公告)日：2008-01-24

申请号：US11826642

申请日：2007-07-17

申请人： Wataru Takamizawa ,  Hiroshi Sato ,  Kanji Kawasaki ,  Masaki Toyama

发明人： Wataru Takamizawa ,  Hiroshi Sato ,  Kanji Kawasaki ,  Masaki Toyama

IPC分类号： F16C19/54

CPC分类号： F16C19/32 ,  F16C33/4605 ,  F16C33/546

摘要： A thrust roller bearing comprising: a pair of races each of which has an annular plate; a cage interposed between the pair of races, formed by a single annular plate including a bent portion bent in an intermediate region in a radial direction of the cage such that a plurality of projecting portions to project in a thickness direction of the cage are formed on a first side and a second side of the cage, and a plurality of pockets stamped out in the thickness direction at predetermined intervals in a circumferential direction of the cage; and a plurality of rollers received respectively in the pockets; wherein the at least two projecting portions are formed on each of the first side and the second side of the cage; and a plurality of race-contacting projection portions are arranged on a surface of at least one of said at least two projecting portions on at least one of the first side and the second side of the cage at predetermined intervals in the circumferential direction of the cage.

摘要翻译： 一种推力滚子轴承，包括：一对座圈，每个座圈具有环形板; 插入在所述一对座圈之间的笼，由单个环形板形成，所述单个环形板包括在所述保持架的径向方向上沿中间区域弯曲的弯曲部分，使得沿所述保持架的厚度方向突出的多个突出部分形成在 保持架的第一侧和第二侧，以及沿着保持架的圆周方向以预定间隔在厚度方向上冲压的多个口袋; 以及分别容纳在所述袋中的多个辊; 其中所述至少两个突出部分形成在所述保持架的所述第一侧和所述第二侧中的每一个上; 并且在所述保持架的第一侧面和第二侧中的至少一个的至少一个突出部的表面上以规定的间隔沿着所述保持架的周向方向配置有多个座接触突起部 。

公开(公告)号：US07298500B2

公开(公告)日：2007-11-20

申请号：US10771992

申请日：2004-02-03

申请人： Hiroshi Sato ,  Kazuhiko Mishima

发明人： Hiroshi Sato ,  Kazuhiko Mishima

IPC分类号： G01B11/14

CPC分类号： G03F9/7096 ,  G03F9/7088

摘要： A position detecting apparatus for detecting position of an object disposed in a first space by receiving light from the object with a light receiving element disposed outside said first space, said position detecting apparatus includes an optical system for directing light from the object to the light receiving element, and a first optical element transmitting light from the object, disposed in a partitioning member for partitioning said first space and space outside said first space, wherein said first optical element is located on a position on or near a pupil plane or a plane conjugate to the pupil plane of said optical system.

摘要翻译： 一种位置检测装置，用于通过利用设置在第一空间外部的光接收元件接收来自物体的光来检测设置在第一空间中的物体的位置，所述位置检测装置包括用于将来自物体的光引导到光接收的光学系统 元件，以及第一光学元件，其从所述物体透射光，所述第一光学元件设置在用于将所述第一空间和所述第一空间之外的空间分隔的分隔构件中，其中所述第一光学元件位于瞳孔平面上或附近的位置， 到所述光学系统的光瞳平面。

公开(公告)号：US20070255067A1

公开(公告)日：2007-11-01

申请号：US11751304

申请日：2007-05-21

申请人： Motozo Yoshikiyo ,  Yasuhiro Tanaka ,  Toshikazu Machida ,  Hiroshi Sato ,  Nobuyuki Kuroda ,  Mitsumasa Tsugawa ,  Sanae Hatakenaka ,  Mikio Fujimoto

发明人： Motozo Yoshikiyo ,  Yasuhiro Tanaka ,  Toshikazu Machida ,  Hiroshi Sato ,  Nobuyuki Kuroda ,  Mitsumasa Tsugawa ,  Sanae Hatakenaka ,  Mikio Fujimoto

IPC分类号： C07F7/02

CPC分类号： C07F7/045 ,  C07F7/025 ,  C08F10/00 ,  C08F4/6574

摘要： A process for the production of trialkoxyhalosilanes which comprises reacting a tetrahalosilane [37] with a tetra-alkoxysilane [38] in the presence of an alcohol whose alkoxy group is the same as those of the tetraalkoxysilane to thereby obtain a trialkoxyhalosilane [39], characterized in that the alcohol is used in an amount of 5 to 50% by mole based on the total amount of Si of the tetrahalosilane and the tetraalkoxysilane: SiX4[37] (wherein X is halogeno) Si(OR1)4[38] (wherein R1 is a hydrocarbon group having 1 to 6 carbon atoms) XSi(OR1)3[39] (wherein X and R1 are each as defined above).

摘要翻译： 一种制备三烷氧基卤代硅烷的方法，包括四烷基硅烷[37]与四烷氧基硅烷[38]在醇的存在下，其烷氧基与四烷氧基硅烷相同，得到三烷氧基卤代硅烷[39]，其特征在于 其中醇的用量相对于四卤代硅烷和四烷氧基硅烷的总量为5〜50摩尔％：SiX 4 [其中，X为卤素原子）Si（ （其中R 1是具有1至6个碳原子的烃基）XSi（OR 1） 3，其中X和R 1各自如上所定义）。