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公开(公告)号：US09356332B2
公开(公告)日：2016-05-31
申请号：US13872718
申请日：2013-04-29
Applicant: Infineon Technologies AG
Inventor： Ernst Seler , Maciej Wojnowski , Walter Hartner
IPC: H03H5/00 , H01P5/08 , H01L21/56 , H01P1/16 , H01L23/66 , H01L23/00 , H01P3/12 , H01P5/107 , H01L23/31
CPC classification number: H01P5/08 , H01L21/56 , H01L21/568 , H01L23/3128 , H01L23/66 , H01L24/19 , H01L24/25 , H01L2223/6633 , H01L2223/6677 , H01L2224/12105 , H01L2224/13 , H01L2224/21 , H01L2224/221 , H01L2224/24195 , H01L2224/2518 , H01L2924/1421 , H01L2924/1461 , H01L2924/15311 , H01L2924/181 , H01P1/16 , H01P3/121 , H01P5/107 , H01L2924/00
Abstract: An integrated-circuit module includes a package molding compound layer, a radio-frequency (RF) integrated circuit embedded within the package molding compound layer and having an RF port, a waveguide transition structure embedded within the package molding compound layer, and a redistribution layer. The waveguide transition structure includes a transmission line interface section, a waveguide interface section configured for coupling to a rectangular waveguide housing, and a transformer section configured to provide a mode transition between the transmission line interface section and the waveguide interface section. The redistribution layer includes at least one insulating layer and at least one metallization layer, extending between the RF integrated circuit and the waveguide transition structure across a surface of the package molding compound layer. The first redistribution layer includes an RF transmission line conductively connected between the RF port of the RF integrated circuit and the transmission line interface section of the waveguide transition structure.
Abstract translation: 集成电路模块包括封装模塑复合层，嵌入在封装模塑复合层内的射频（RF）集成电路，并具有RF端口，嵌入封装模塑复合层内的波导过渡结构以及再分配层 。 波导过渡结构包括传输线接口部分，被配置为耦合到矩形波导壳体的波导接口部分和被配置为在传输线接口部分和波导接口部分之间提供模式转换的变压器部分。 再分配层包括至少一个绝缘层和至少一个金属化层，其跨过封装模塑复合层的表面在RF集成电路和波导过渡结构之间延伸。 第一再分配层包括导电连接在RF集成电路的RF端口和波导过渡结构的传输线接口部分之间的RF传输线。
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公开(公告)号：US20160127157A1
公开(公告)日：2016-05-05
申请号：US14531343
申请日：2014-11-03
Applicant: Infineon Technologies AG
Inventor： Maciej Wojnowski , Alexander Glas , Hubert Werthmann , Josef-Paul Schaffer , Francesca Arcioni , Gabriele Bettineschi
CPC classification number: H04L25/085 , H02H9/046 , H04L25/0276
Abstract: A common-mode suppressor for eliminating common-mode noise in high frequency differential data transmission systems and an associated method includes a long coiled differential transmission line configured to transfer data between a source and a load. The differential transmission line comprises a first conductive wire and a second conductive wire which are inductively and capacitively coupled and are laterally aligned or vertically aligned with each other. Further, the differential transmission line is matched for differential signals and un-matched for common-mode noise.
Abstract translation: 用于消除高频差分数据传输系统中的共模噪声的共模抑制器及相关方法包括：构造成在源和负载之间传送数据的长线圈差动传输线。 差分传输线包括电感和电容耦合并且彼此横向对准或垂直对准的第一导线和第二导线。 此外，差分传输线被匹配用于差分信号，并且对于共模噪声是不匹配的。
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公开(公告)号：US20160043455A1
公开(公告)日：2016-02-11
申请号：US14453746
申请日：2014-08-07
Applicant: Infineon Technologies AG
Inventor： Ernst Seler , Maciej Wojnowski , Walter Hartner , Josef Boeck
IPC: H01P5/107
CPC classification number: H01P5/107 , H01L2223/6677 , H01L2224/04105 , H01L2224/12105 , H01L2924/18162 , H01P1/042 , H01P11/002 , H01P11/003 , H04B5/00
Abstract: A microwave device includes a semiconductor package comprising a microwave semiconductor chip and a waveguide part associated with the semiconductor package. The waveguide part is configured to transfer a microwave waveguide signal. It includes one or more pieces. The microwave device further includes a transformer element configured to transform a microwave signal from the microwave semiconductor chip into the microwave waveguide signal or to transform the microwave waveguide signal into a microwave signal for the microwave semiconductor chip.
Abstract translation: 微波器件包括包括微波半导体芯片和与半导体封装件相关联的波导部件的半导体封装。 波导部分被配置为传送微波波导信号。 它包括一个或多个片段。 微波装置还包括变换元件，其被配置为将来自微波半导体芯片的微波信号转换成微波波导信号，或者将微波波导信号转换为用于微波半导体芯片的微波信号。
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公开(公告)号：US20150171033A1
公开(公告)日：2015-06-18
申请号：US14106092
申请日：2013-12-13
Applicant: Infineon Technologies AG
Inventor： Ernst Seler , Maciej Wojnowski , Walter Hartner , Josef Boeck
CPC classification number: H01L23/66 , H01L21/4853 , H01L21/4857 , H01L21/486 , H01L21/561 , H01L21/565 , H01L21/568 , H01L23/3114 , H01L23/3128 , H01L23/5383 , H01L23/5384 , H01L23/5386 , H01L23/5389 , H01L23/552 , H01L24/19 , H01L24/96 , H01L2223/6616 , H01L2223/6627 , H01L2223/6677 , H01L2224/04105 , H01L2224/12105 , H01L2924/12042 , H01L2924/19105 , H01L2924/3025 , H01Q13/08 , H01L2924/00
Abstract: A semiconductor device package includes an encapsulant and a semiconductor chip. The semiconductor chip is at least partly embedded in the encapsulant. A microwave component including at least one electrically conducting wall structure is integrated in the encapsulant. Further, the semiconductor device package includes an electrical interconnect configured to electrically couple the microwave component to the semiconductor chip.
Abstract translation: 半导体器件封装包括密封剂和半导体芯片。 半导体芯片至少部分地嵌入密封剂中。 包括至少一个导电壁结构的微波部件集成在密封剂中。 此外，半导体器件封装包括被配置为将微波部件电耦合到半导体芯片的电互连。
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公开(公告)号：US20150061091A1
公开(公告)日：2015-03-05
申请号：US14016045
申请日：2013-08-31
Applicant: Infineon Technologies AG
Inventor： Ernst SELER , Maciej Wojnowski
IPC: H01L23/66 , H01L23/00 , H01L21/768
CPC classification number: H01L23/66 , H01L21/568 , H01L21/76838 , H01L23/49816 , H01L23/5389 , H01L23/60 , H01L24/19 , H01L24/85 , H01L24/96 , H01L2223/6633 , H01L2223/6655 , H01L2223/6677 , H01L2224/04105 , H01L2224/05599 , H01L2224/12105 , H01L2224/24137 , H01L2224/85 , H01L2224/85399 , H01L2924/00014 , H01L2924/181 , H01L2224/45015 , H01L2924/207 , H01L2924/00012 , H01L2224/45099
Abstract: An electronic device which comprises at least one interconnect, a semiconductor chip comprising at least one electric chip pad, an encapsulant structure packaging at least a part of the semiconductor chip, and an electrically conductive redistribution layer arranged between and electrically coupled with the at least one interconnect and the at least one chip pad, wherein the redistribution layer comprises at least one adjustment structure configured for adjusting radio frequency properties of a transition between the semiconductor chip and its periphery.
Abstract translation: 一种包括至少一个互连的电子设备，包括至少一个电子芯片焊盘的半导体芯片，封装半导体芯片的至少一部分的密封剂结构，以及布置在其中并与所述至少一个电连接的电连接的导电再分配层 互连和至少一个芯片焊盘，其中重新分配层包括被配置用于调整半导体芯片与其周边之间的过渡的射频属性的至少一个调整结构。
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Patent Agency Ranking
公开(公告)号：US08460967B2
公开(公告)日：2013-06-11
申请号：US13622058
申请日：2012-09-18
Applicant: Infineon Technologies AG
Inventor： Rudolf Lachner , Linus Maurer , Maciej Wojnowski
CPC classification number: H01L23/66 , H01L23/3128 , H01L23/3135 , H01L24/12 , H01L24/19 , H01L2223/6611 , H01L2223/6655 , H01L2223/6677 , H01L2223/6683 , H01L2224/0401 , H01L2224/04042 , H01L2224/04105 , H01L2224/12105 , H01L2224/16225 , H01L2224/32225 , H01L2224/48247 , H01L2224/73204 , H01L2924/01005 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01072 , H01L2924/01074 , H01L2924/01075 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/1423 , H01L2924/181 , H01L2924/1815 , H01L2924/18162 , H01L2924/19107 , H01L2924/3011 , H01L2924/351 , H01Q1/2283 , H01Q9/0407 , H01Q9/045 , H01Q9/0457 , H01L2924/00
Abstract: A semiconductor module comprises components in one wafer level package. The module comprises an integrated circuit (IC) chip embedded within a package molding compound. The package comprises a molding compound package layer coupled to an interface layer for integrating an antenna structure and a bonding interconnect structure to the IC chip. The bonding interconnect structure comprises three dimensional interconnects. The antenna structure and bonding interconnect structure are coupled to the IC chip and integrated within the interface layer in the same wafer fabrication process.
Abstract translation: 半导体模块包括一个晶片级封装中的部件。 该模块包括嵌入在封装模塑料中的集成电路（IC）芯片。 该封装包括耦合到界面层的成型复合封装层，用于将天线结构和接合互连结构集成到IC芯片。 接合互连结构包括三维互连。 天线结构和接合互连结构在相同的晶片制造过程中耦合到IC芯片并且集成在界面层内。
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公开(公告)号：US12040543B2
公开(公告)日：2024-07-16
申请号：US17648730
申请日：2022-01-24
Applicant: Infineon Technologies AG
Inventor： Walter Hartner , Tuncay Erdoel , Klaus Elian , Christian Geissler , Bernhard Rieder , Rainer Markus Schaller , Horst Theuss , Maciej Wojnowski
CPC classification number: H01Q13/06 , H01Q1/2283 , H01Q1/526 , H01Q23/00
Abstract: A radio-frequency device comprises a printed circuit board and a radio-frequency package having a radio-frequency chip and a radio-frequency radiation element, the radio-frequency package being mounted on the printed circuit board. The radio-frequency device furthermore comprises a waveguide component having a waveguide, wherein the radio-frequency radiation element is configured to radiate transmission signals into the waveguide and/or to receive reception signals via the waveguide. The radio-frequency device furthermore comprises a gap arranged between a first side of the radio-frequency package and a second side of the waveguide component, and a shielding structure, which is configured: to permit a relative movement between the radio-frequency package and the waveguide component in a first direction perpendicular to the first side of the radio-frequency package, and to shield the transmission signals and/or the reception signals in such a way that a propagation of the signals via the gap is attenuated or prevented.
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公开(公告)号：US11879966B2
公开(公告)日：2024-01-23
申请号：US17248003
申请日：2021-01-05
Applicant: Infineon Technologies AG
Inventor： Josef Boeck , Rudolf Lachner , Maciej Wojnowski , Walter Hartner
CPC classification number: G01S13/86 , G01S7/006 , G01S7/02 , G01S13/003 , H04B1/40 , G01S7/032 , G01S13/878 , G01S13/931 , H01L2223/6677 , H01L2224/04105 , H01L2224/12105
Abstract: A semiconductor package having an antenna; and a semiconductor die which is coupled to the antenna and comprises a transmitter configured to transmit wirelessly via the antenna a wireless signal having information on a local oscillator signal to a further semiconductor package comprising a further semiconductor die.
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公开(公告)号：US20220148951A1
公开(公告)日：2022-05-12
申请号：US17544221
申请日：2021-12-07
Applicant: Infineon Technologies AG
Inventor： Ngoc-Hoa Huynh , Franz-Xaver Muehlbauer , Claus Waechter , Veronika Theyerl , Dominic Maier , Thomas Kilger , Saverio Trotta , Ashutosh Baheti , Georg Meyer-Berg , Maciej Wojnowski
IPC: H01L23/498 , H01L23/367 , H01L23/538 , H01Q9/28 , H01Q1/22 , H01Q9/04 , H01Q21/06 , H01L21/56 , H01L23/31
Abstract: A semiconductor device includes a semiconductor chip and a redistribution layer on a first side of the semiconductor chip. The redistribution layer is electrically coupled to the semiconductor chip. The semiconductor device includes a dielectric layer and an antenna on the dielectric layer. The dielectric layer is between the antenna and the semiconductor chip.
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公开(公告)号：US20210247510A1
公开(公告)日：2021-08-12
申请号：US17248003
申请日：2021-01-05
Applicant: Infineon Technologies AG
Inventor： Josef Boeck , Rudolf Lachner , Maciej Wojnowski , Walter Hartner
Abstract: A semiconductor package having an antenna; and a semiconductor die which is coupled to the antenna and comprises a transmitter configured to transmit wirelessly via the antenna a wireless signal having information on a local oscillator signal to a further semiconductor package comprising a further semiconductor die.
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