公开(公告)号：US20120068351A1

公开(公告)日：2012-03-22

申请号：US12883421

申请日：2010-09-16

申请人： Vage Oganesian ,  Belgacem Haba ,  Ilyas Mohammed ,  Craig Mitchell ,  Piyush Savalia

发明人： Vage Oganesian ,  Belgacem Haba ,  Ilyas Mohammed ,  Craig Mitchell ,  Piyush Savalia

IPC分类号： H01L23/522 ,  H01L21/60

CPC分类号： H01L24/80 ,  H01L21/6835 ,  H01L21/76805 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5384 ,  H01L24/02 ,  H01L24/24 ,  H01L24/25 ,  H01L24/27 ,  H01L24/32 ,  H01L24/82 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/68372 ,  H01L2224/0231 ,  H01L2224/0235 ,  H01L2224/02371 ,  H01L2224/2401 ,  H01L2224/2405 ,  H01L2224/24146 ,  H01L2224/244 ,  H01L2224/2512 ,  H01L2224/32225 ,  H01L2224/82005 ,  H01L2224/821 ,  H01L2224/82106 ,  H01L2224/83005 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/92 ,  H01L2224/9202 ,  H01L2224/92244 ,  H01L2224/93 ,  H01L2224/94 ,  H01L2225/06544 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/1434 ,  H01L2924/1436 ,  H01L2924/1437 ,  H01L2224/27 ,  H01L2224/83 ,  H01L2224/82 ,  H01L2924/00

摘要： An assembly and method of making same are provided. The assembly can be formed by juxtaposing a first electrically conductive element overlying a major surface of a first semiconductor element with an electrically conductive pad exposed at a front surface of a second semiconductor element. An opening can be formed extending through the conductive pad of the second semiconductor element and exposing a surface of the first conductive element. The opening may alternatively be formed extending through the first conductive element. A second electrically conductive element can be formed extending at least within the opening and electrically contacting the conductive pad and the first conductive element. A third semiconductor element can be positioned in a similar manner with respect to the second semiconductor element.

摘要翻译： 提供了组装和制造方法。 可以通过将覆盖在第一半导体元件的主表面上的第一导电元件与暴露在第二半导体元件的前表面处的导电焊盘并置来形成该组件。 可以形成延伸穿过第二半导体元件的导电焊盘并露出第一导电元件的表面的开口。 开口可替代地形成为延伸穿过第一导电元件。 第二导电元件可以形成为至少在开口内延伸并且电接触导电垫和第一导电元件。 第三半导体元件可以相对于第二半导体元件以类似的方式定位。

公开(公告)号：US20120018895A1

公开(公告)日：2012-01-26

申请号：US12842692

申请日：2010-07-23

申请人： Vage Oganesian ,  Ilyas Mohammed ,  Craig Mitchell ,  Belgacem Haba ,  Piyush Savalia

发明人： Vage Oganesian ,  Ilyas Mohammed ,  Craig Mitchell ,  Belgacem Haba ,  Piyush Savalia

IPC分类号： H01L23/522 ,  H01L21/50

CPC分类号： H01L23/5384 ,  H01L23/3114 ,  H01L23/481 ,  H01L24/05 ,  H01L24/06 ,  H01L24/16 ,  H01L24/17 ,  H01L24/19 ,  H01L24/20 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14645 ,  H01L29/0657 ,  H01L2224/0237 ,  H01L2224/0401 ,  H01L2224/05552 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/13024 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/1703 ,  H01L2224/32145 ,  H01L2224/73204 ,  H01L2224/81805 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06544 ,  H01L2225/06555 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/1434 ,  H01L2924/1436 ,  H01L2924/1437 ,  H01L2924/18161 ,  H01L2224/81 ,  H01L2924/00012 ,  H01L2924/00

摘要： A structure including a first semiconductor chip with front and rear surfaces and a cavity in the rear surface. A second semiconductor chip is mounted within the cavity. The first chip may have vias extending from the cavity to the front surface and via conductors within these vias serving to connect the additional microelectronic element to the active elements of the first chip. The structure may have a volume comparable to that of the first chip alone and yet provide the functionality of a multi-chip assembly. A composite chip incorporating a body and a layer of semiconductor material mounted on a front surface of the body similarly may have a cavity extending into the body from the rear surface and may have an additional microelectronic element mounted in such cavity.

摘要翻译： 一种结构，包括具有前表面和后表面的第一半导体芯片以及后表面中的空腔。 第二个半导体芯片安装在腔内。 第一芯片可以具有从空腔延伸到前表面的通孔，以及用于将附加的微电子元件连接到第一芯片的有源元件的这些通孔内的导体。 该结构可以具有与第一芯片单独的体积相当的体积，并且提供多芯片组件的功能。 安装在主体的前表面上的主体和半导体材料层的复合芯片类似地可以具有从后表面延伸到主体中的空腔，并且可以具有安装在该空腔中的附加的微电子元件。

公开(公告)号：US09640437B2

公开(公告)日：2017-05-02

申请号：US12842612

申请日：2010-07-23

申请人： Vage Oganesian ,  Belgacem Haba ,  Craig Mitchell ,  Ilyas Mohammed ,  Piyush Savalia

发明人： Vage Oganesian ,  Belgacem Haba ,  Craig Mitchell ,  Ilyas Mohammed ,  Piyush Savalia

IPC分类号： H01L23/48 ,  H01L21/768 ,  B24C1/04 ,  B24C3/32 ,  H01L23/498 ,  H01L23/00

CPC分类号： H01L21/76898 ,  B24C1/045 ,  B24C3/322 ,  H01L23/481 ,  H01L23/4985 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L2224/03464 ,  H01L2224/05009 ,  H01L2224/0557 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/06181 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01061 ,  H01L2924/01076 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/1434 ,  H01L2224/05552 ,  H01L2924/00

摘要： A method of fabricating a microelectronic unit includes providing a semiconductor element having a front surface and a rear surface remote from the front surface, forming at least one first opening extending from the rear surface partially through the semiconductor element towards the front surface by directing a jet of fine abrasive particles towards the semiconductor element, and forming at least one conductive contact and at least one conductive interconnect coupled thereto. The semiconductor element can include a plurality of active semiconductor devices therein. The semiconductor element can include a plurality of conductive pads exposed at the front surface. Each conductive interconnect can extend within one or more of the first openings and can be coupled directly or indirectly to at least one of the conductive pads. Each of the conductive contacts can be exposed at the rear surface of the semiconductor element for electrical connection to an external device.

公开(公告)号：US09041133B2

公开(公告)日：2015-05-26

申请号：US13111258

申请日：2011-05-19

申请人： Vage Oganesian ,  Belgacem Haba ,  Ilyas Mohammed ,  Piyush Savalia ,  Craig Mitchell

发明人： Vage Oganesian ,  Belgacem Haba ,  Ilyas Mohammed ,  Piyush Savalia ,  Craig Mitchell

IPC分类号： H01L31/0232 ,  H01L27/146

CPC分类号： H01L27/14609 ,  H01L27/1461 ,  H01L27/14621 ,  H01L27/1464 ,  H01L27/14645

摘要： A microelectronic image sensor assembly for backside illumination and method of making same are provided. The assembly includes a microelectronic element having contacts exposed at a front face and light sensing elements arranged to receive light of different wavelengths through a rear face. A semiconductor region has an opening overlying at least one of first and second light sensing elements, the semiconductor region having a first thickness between the first light sensing element and the rear face and a second thickness between the second light sensing element and the rear face. A light-absorbing material overlies the semiconductor region within the opening above at least one of the light sensing elements such that the first and second light sensing elements receive light of substantially the same intensity.

摘要翻译： 提供一种用于背面照明的微电子图像传感器组件及其制造方法。 该组件包括具有在正面暴露的触点的微电子元件和被布置成通过后表面接收不同波长的光的光感测元件。 半导体区域具有覆盖第一和第二光感测元件中的至少一个的开口，该半导体区域在第一光感测元件和后表面之间具有第一厚度，在第二光感测元件与后表面之间具有第二厚度。 光吸收材料覆盖至少一个感光元件之内的开口内的半导体区域，使得第一和第二光感测元件接收基本上相同强度的光。

公开(公告)号：US08847380B2

公开(公告)日：2014-09-30

申请号：US12884649

申请日：2010-09-17

申请人： Vage Oganesian ,  Belgacem Haba ,  Ilyas Mohammed ,  Craig Mitchell ,  Piyush Savalia

发明人： Vage Oganesian ,  Belgacem Haba ,  Ilyas Mohammed ,  Craig Mitchell ,  Piyush Savalia

IPC分类号： A01C1/04 ,  A01C1/00 ,  H01L21/50 ,  H01L21/283 ,  H01L25/065 ,  H01L23/00 ,  H01L23/48 ,  H01L25/00 ,  H01L21/768

CPC分类号： H01L23/481 ,  H01L21/76898 ,  H01L23/50 ,  H01L24/03 ,  H01L24/05 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/06181 ,  H01L2224/16145 ,  H01L2224/32145 ,  H01L2224/73204 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06544 ,  H01L2924/01322 ,  H01L2924/07811 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/00012 ,  H01L2924/00

摘要： A method of fabricating a semiconductor assembly can include providing a semiconductor element having a front surface, a rear surface, and a plurality of conductive pads, forming at least one hole extending at least through a respective one of the conductive pads by processing applied to the respective conductive pad from above the front surface, forming an opening extending from the rear surface at least partially through a thickness of the semiconductor element, such that the at least one hole and the opening meet at a location between the front and rear surfaces, and forming at least one conductive element exposed at the rear surface for electrical connection to an external device, the at least one conductive element extending within the at least one hole and at least into the opening, the conductive element being electrically connected with the respective conductive pad.

摘要翻译： 制造半导体组件的方法可以包括提供具有前表面，后表面和多个导电焊盘的半导体元件，形成至少一个至少通过相应的一个导电焊盘延伸的孔， 形成从所述后表面至少部分地延伸半导体元件的厚度的开口，使得所述至少一个孔和所述开口在前表面和后表面之间的位置相遇，以及 形成在所述后表面处暴露的至少一个导电元件以电连接到外部装置，所述至少一个导电元件在所述至少一个孔内延伸并且至少进入所述开口中，所述导电元件与相应的导电垫电连接 。

公开(公告)号：US08841763B2

公开(公告)日：2014-09-23

申请号：US13097943

申请日：2011-04-29

申请人： Vage Oganesian ,  Belgacem Haba ,  Ilyas Mohammed ,  Piyush Savalia ,  Craig Mitchell

发明人： Vage Oganesian ,  Belgacem Haba ,  Ilyas Mohammed ,  Piyush Savalia ,  Craig Mitchell

IPC分类号： H01L23/12 ,  H01L23/00 ,  H01L23/538

CPC分类号： H01L25/50 ,  H01L23/5389 ,  H01L24/24 ,  H01L24/82 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/24145 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2225/06524 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/1434 ,  H01L2924/1436 ,  H01L2924/1437 ,  H01L2924/00

摘要： A microelectronic assembly can include first, second and third stacked substantially planar elements, e.g., of dielectric or semiconductor material, and which may have a CTE of less than 10 ppm/° C. The assembly may be a microelectronic package and may incorporate active semiconductor devices in one, two or more of the first, second or third elements to function cooperatively as a system-in-a-package. In one example, an electrically conductive element having at least a portion having a thickness less than 10 microns, may be formed by plating, and may electrically connect two or more of the first, second or third elements. The conductive element may entirely underlie a surface of another one of the substantially planar elements.

摘要翻译： 微电子组件可以包括例如电介质或半导体材料的第一，第二和第三堆叠的基本平坦的元件，并且其可以具有小于10ppm /℃的CTE。组件可以是微电子封装，并且可以并入有源半导体 在第一，第二或第三元件中的一个，两个或更多个元件中的装置可以协同地作为系统级封装。 在一个示例中，具有厚度小于10微米的至少一部分的导电元件可以通过电镀形成，并且可以电连接第一，第二或第三元件中的两个或更多个。 导电元件可以完全位于另一个基本上平面的元件的表面之下。

公开(公告)号：US08587126B2

公开(公告)日：2013-11-19

申请号：US13051414

申请日：2011-03-18

申请人： Vage Oganesian ,  Belgacem Haba ,  Ilyas Mohammed ,  Craig Mitchell ,  Piyush Savalia

发明人： Vage Oganesian ,  Belgacem Haba ,  Ilyas Mohammed ,  Craig Mitchell ,  Piyush Savalia

IPC分类号： H01L23/48 ,  H01L23/52

CPC分类号： H01L25/00 ,  H01L21/76805 ,  H01L21/76898 ,  H01L23/3178 ,  H01L23/481 ,  H01L24/81 ,  H01L24/92 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/13025 ,  H01L2224/16225 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/29188 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2224/83005 ,  H01L2224/9202 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2924/10253 ,  H01L2924/1032 ,  H01L2924/1037 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/1436 ,  H01L2924/1437 ,  H01L2924/15311 ,  H01L2224/83 ,  H01L2924/00

摘要： A microelectronic assembly is provided in which first and second electrically conductive pads exposed at front surfaces of first and second microelectronic elements, respectively, are juxtaposed, each of the microelectronic elements embodying active semiconductor devices. An electrically conductive element may extend within a first opening extending from a rear surface of the first microelectronic element towards the front surface thereof, within a second opening extending from the first opening towards the front surface of the first microelectronic element, and within a third opening extending through at least one of the first and second pads to contact the first and second pads. Interior surfaces of the first and second openings may extend in first and second directions relative to the front surface of the first microelectronic element, respectively, to define a substantial angle.

摘要翻译： 提供了一种微电子组件，其中分别暴露在第一和第二微电子元件的前表面处的第一和第二导电焊盘并置，每个微电子元件体现有源半导体器件。 导电元件可以在从第一微电子元件的后表面延伸到其前表面的第一开口内延伸，在从第一开口朝向第一微电子元件的前表面延伸的第二开口内，并且在第三开口 延伸穿过第一和第二垫中的至少一个以接触第一和第二垫。 第一和第二开口的内表面可分别相对于第一微电子元件的前表面在第一和第二方向上延伸，以限定大致的角度。

公开(公告)号：US08502340B2

公开(公告)日：2013-08-06

申请号：US12964049

申请日：2010-12-09

申请人： Vage Oganesian ,  Belgacem Haba ,  Ilyas Mohammed ,  Piyush Savalia

发明人： Vage Oganesian ,  Belgacem Haba ,  Ilyas Mohammed ,  Piyush Savalia

IPC分类号： H01L21/02

CPC分类号： H01L28/91 ,  H01L23/481 ,  H01L28/40 ,  H01L28/60 ,  H01L2223/6622 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

摘要： A component includes a substrate and a capacitor formed in contact with the substrate. The substrate can consist essentially of a material having a coefficient of thermal expansion of less than 10 ppm/° C. The substrate can have a surface and an opening extending downwardly therefrom. The capacitor can include at least first and second pairs of electrically conductive plates and first and second electrodes. The first and second pairs of plates can be connectable with respective first and second electric potentials. The first and second pairs of plates can extend along an inner surface of the opening, each of the plates being separated from at least one adjacent plate by a dielectric layer. The first and second electrodes can be exposed at the surface of the substrate and can be coupled to the respective first and second pairs of plates.

摘要翻译： 组件包括基板和形成为与基板接触的电容器。 基底可以由具有小于10ppm /℃的热膨胀系数的材料组成。基底可以具有从其向下延伸的表面和开口。 电容器可以包括至少第一和第二对导电板以及第一和第二电极。 第一和第二对板可以与相应的第一和第二电位连接。 第一和第二对板可以沿着开口的内表面延伸，每个板通过电介质层与至少一个相邻的板分离。 第一和第二电极可以暴露在基板的表面，并且可以耦合到相应的第一和第二对板。

公开(公告)号：US20120199924A1

公开(公告)日：2012-08-09

申请号：US13020328

申请日：2011-02-03

申请人： Vage Oganesian ,  Belgacem Haba ,  Ilyas Mohammed ,  Piyush Savalia ,  Craig Mitchell

发明人： Vage Oganesian ,  Belgacem Haba ,  Ilyas Mohammed ,  Piyush Savalia ,  Craig Mitchell

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L27/1464 ,  H01L27/14618 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14636 ,  H01L2224/13

摘要： A microelectronic image sensor assembly for backside illumination and method of making same are provided. The assembly includes a microelectronic element having contacts exposed at a front face and light sensing elements arranged to receive light of different wavelengths through a semiconductor region adjacent a rear face. The semiconductor region has a first region of material overlying the first light sensing element and a second region of material overlying the second light sensing element such that the first and second wavelengths are able to pass through the first and second regions, respectively, and reach the first and second light sensing elements with substantially the same intensity.

摘要翻译： 提供了一种用于背面照明的微电子图像传感器组件及其制造方法。 该组件包括具有在正面暴露的触点的微电子元件和布置成通过邻近后表面的半导体区域接收不同波长的光的光感测元件。 半导体区域具有覆盖第一光感测元件的第一材料区域和覆盖第二光感测元件的第二材料区域，使得第一和第二波长能够分别穿过第一和第二区域并达到 具有基本上相同强度的第一和第二光感测元件。

公开(公告)号：US20120153426A1

公开(公告)日：2012-06-21

申请号：US12970529

申请日：2010-12-16

申请人： Vage Oganesian ,  Belgacem Haba ,  Ilyas Mohammed ,  Piyush Savalia ,  Craig Mitchell

发明人： Vage Oganesian ,  Belgacem Haba ,  Ilyas Mohammed ,  Piyush Savalia ,  Craig Mitchell

IPC分类号： H01L29/06 ,  H01L21/762

CPC分类号： H01L23/562 ,  B81C1/00269 ,  B81C1/00357 ,  H01L21/2007 ,  H01L21/561 ,  H01L21/563 ,  H01L21/568 ,  H01L23/13 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/50 ,  H01L29/0657 ,  H01L2224/29186 ,  H01L2224/2919 ,  H01L2224/32057 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/83051 ,  H01L2224/83191 ,  H01L2224/83345 ,  H01L2224/83385 ,  H01L2224/83855 ,  H01L2224/83856 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06555 ,  H01L2225/06575 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10158 ,  H01L2924/10253 ,  H01L2924/1027 ,  H01L2924/1032 ,  H01L2924/1037 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/3511 ,  H01L2224/83 ,  H01L2924/00

摘要： A method of bonding first and second microelectronic elements includes pressing together a first substrate containing active circuit elements therein with a second substrate, with a flowable dielectric material between confronting surfaces of the respective substrates, each of the first and second substrates having a coefficient of thermal expansion less than 10 parts per million/° C., at least one of the confronting surfaces having a plurality of channels extending from an edge of such surface, such that the dielectric material between planes defined by the confronting surfaces is at least substantially free of voids and has a thickness over one micron, and at least some of the dielectric material flows into at least some of the channels.

摘要翻译： 接合第一和第二微电子元件的方法包括将含有有源电路元件的第一衬底与第二衬底压在一起，在相应衬底的相对表面之间具有可流动介电材料，第一和第二衬底中的每一个具有热系数 膨胀小于10ppm /℃，至少一个相对表面具有从该表面的边缘延伸的多个通道，使得由相对表面限定的平面之间的电介质材料至少基本上不含 空隙并且具有超过一微米的厚度，并且至少一些介电材料流入至少一些通道。