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77 条记录 (耗时 0.024 秒)

    Method for producing an ohmic contact
    43.
    发明授权
    Method for producing an ohmic contact 失效
    制造欧姆接触的方法

    公开(公告)号：US06365494B2

    公开(公告)日：2002-04-02

    申请号：US09816921

    申请日：2001-03-23

    申请人： Roland Rupp ,  Arno Wiedenhofer

    发明人： Roland Rupp ,  Arno Wiedenhofer

    IPC分类号： H01L2131

    CPC分类号： H01L29/1608 ,  H01L21/0485 ,  H01L29/45 ,  H01L29/47 ,  H01L29/6606 ,  H01L29/872 ,  Y10S438/931

    摘要： A component is produced on a substrate made of SiC. The component has at least one ohmic contact and at least one Schottky contact. The component is brought to a temperature of more than 1300° C. at least during the growth of an epitaxial layer. To ensure that the production of the ohmic contact does not lead to impairment of other structures on the component and that the ohmic contact, for its part, is insensitive with respect to later method steps at high temperatures, the first metal is applied to the substrate for the ohmic contact before the epitaxial layer is grown.

    摘要翻译： 在由SiC制成的基板上制造成分。 该组件具有至少一个欧姆接触和至少一个肖特基接触。 至少在外延层的生长过程中，该组分的温度达到1300℃以上。 为了确保欧姆接触的产生不会导致部件上的其它结构的损伤，并且对于其部分而言，欧姆接触对于高温下的后续方法步骤是不敏感的，则将第一金属施加到基底 用于在外延层生长之前的欧姆接触。

    Device and method for producing at least one SiC single crystal
    44.
    发明授权
    Device and method for producing at least one SiC single crystal 有权
    用于生产至少一种SiC单晶的装置和方法

    公开(公告)号：US06344085B2

    公开(公告)日：2002-02-05

    申请号：US09761809

    申请日：2001-01-16

    申请人： Harald Kuhn ,  Roland Rupp ,  Rene Stein ,  Johannes Völkl

    发明人： Harald Kuhn ,  Roland Rupp ,  Rene Stein ,  Johannes Völkl

    IPC分类号： C30B3500

    CPC分类号： C30B23/00 ,  C30B29/36 ,  Y10T117/10 ,  Y10T117/1092

    摘要： A device for producing a silicon carbide (SiC) single crystal contains a crucible having a storage region for holding a stock of solid SiC and having a crystal region for holding a SiC seed crystal. An insert made from glassy carbon is disposed in the crucible. In the method, solid SiC is sublimed as a result of the stock being heated and SiC in the gas phase is generated, which is conveyed to the SiC seed crystal, on which it grows as an SiC single crystal. A heat flux is controlled by an insert made from glassy carbon.

    摘要翻译： 用于制造碳化硅（SiC）单晶的装置包括具有用于保持固体SiC的原料并具有用于保持SiC晶种的晶体区域的存储区域的坩埚。 由玻璃碳制成的插入件设置在坩埚中。 在该方法中，由于原料被加热而产生固体SiC，气相中的SiC被输送到作为SiC单晶生长的SiC晶种上。 热通量由玻璃碳制成的插件控制。

    Method and apparatus for the production of SiC by means of CVD with improved gas utilization
    45.
    发明授权
    Method and apparatus for the production of SiC by means of CVD with improved gas utilization 失效
    通过改进气体利用率的CVD生产SiC的方法和装置

    公开(公告)号：US06299683B1

    公开(公告)日：2001-10-09

    申请号：US08791519

    申请日：1997-01-30

    申请人： Roland Rupp ,  Johannes Voelkl

    发明人： Roland Rupp ,  Johannes Voelkl

    IPC分类号： C23C1600

    CPC分类号： C23C16/45519 ,  C23C16/325 ,  C23C16/455

    摘要： A process gas stream (2) is generated, from which SiC is deposited on a substrate (4) by means of CVD. Furthermore, a second gas stream (3) of an inert gas is generated, which substantially surrounds the process gas stream (2) in its direction of flow. This results in a higher yield of the process gases.

    摘要翻译： 产生工艺气体流（2），通过CVD将SiC沉积在衬底（4）上。 此外，产生惰性气体的第二气流（3），其基本上在其流动方向上围绕处理气流（2）。 这导致更高的工艺气体产率。

    Process for passivating a silicon carbide surface against oxygen
    46.
    发明授权
    Process for passivating a silicon carbide surface against oxygen 失效
    将碳化硅表面钝化成氧的方法

    公开(公告)号：US6107168A

    公开(公告)日：2000-08-22

    申请号：US945155

    申请日：1997-12-18

    申请人： Roland Rupp

    发明人： Roland Rupp

    IPC分类号： H01L21/205 ,  H01L21/04 ,  H01L21/314 ,  H01L23/31 ,  H01R31/08

    CPC分类号： H01L21/045 ,  H01L21/3146 ,  H01L23/3171 ,  H01L2924/0002 ,  Y10S438/931

    摘要： In the manufacture of semiconductor components, a SiC single crystal is exposed, during storage or transport between two process steps, to an oxygen-containing gas atmosphere, for example air. In order to prevent an oxide coating from forming on the SiC surface of the SiC single crystal, a carbon coating which does not react chemically with oxygen, preferably a graphite coating, is produced on said SiC surface.

    摘要翻译： PCT No.PCT / DE96 / 00553 Sec。 371 1997年12月18日第 102（e）日期1997年12月18日PCT 1996年3月29日PCT公布。 WO96 / 32740 PCT出版物 日期1996年10月17日在半导体部件的制造中，SiC单晶在两个工艺步骤之间的储存或运输期间暴露于含氧气体气氛，例如空气。 为了防止在SiC单晶的SiC表面上形成氧化物涂层，在所述SiC表面上产生不与氧化学反应的碳涂层，优选石墨涂层。