公开(公告)号：US09881963B1

公开(公告)日：2018-01-30

申请号：US15263936

申请日：2016-09-13

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Eric A. G. Webster ,  Duli Mao ,  Vincent Venezia ,  Dyson H. Tai

IPC: H01L27/00 ,  H01L27/146 ,  H01L31/107

CPC classification number: H01L27/14643 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/14683 ,  H01L31/107

Abstract: An avalanche photodiode sensor includes a plurality of avalanche photodiodes disposed in a semiconductor material where individual avalanche photodiodes in the plurality of avalanche photodiodes have an internal electric field parallel with a first surface of the semiconductor material. The individual avalanche photodiodes in the plurality of avalanche photodiodes include a p-doped semiconductor region which extends into the semiconductor material, and an n-doped semiconductor region which extends into the semiconductor material. The internal electric field extends between the p-doped semiconductor region and the n-doped semiconductor region. Processing methods as examples are also proposed.

公开(公告)号：US09881955B2

公开(公告)日：2018-01-30

申请号：US14882832

申请日：2015-10-14

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dajiang Yang ,  Gang Chen ,  Duli Mao ,  Dyson H. Tai

IPC: H04N5/335 ,  H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/1461 ,  H01L27/14627 ,  H01L27/1463

Abstract: A photodetector includes a first doped region disposed in a semiconductor material and a second doped region disposed in the semiconductor material. The second doped region is electrically coupled to the first doped region, and the second doped region is of an opposite majority charge carrier type as the first doped region. The photodetector also includes a quantum dot layer disposed in a trench in the semiconductor material, and the quantum dot layer is electrically coupled to the second doped region. A transfer gate is disposed to permit charge transfer from the second doped region to a floating diffusion.

公开(公告)号：US20180007324A1

公开(公告)日：2018-01-04

申请号：US15197464

申请日：2016-06-29

Applicant: OmniVision Technologies, Inc.

Inventor： Gang Chen ,  Duli Mao ,  Dyson Hsin-Chih Tai

IPC: H04N9/083 ,  H01L27/146 ,  H04N5/225 ,  H04N9/04 ,  H04N5/369

CPC classification number: H04N9/083 ,  H01L27/14605 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14645 ,  H04N5/2252 ,  H04N5/2253 ,  H04N5/2257 ,  H04N5/35563 ,  H04N5/3696 ,  H04N9/045

Abstract: An image sensor includes a substrate, a first set of sensor pixels formed on the substrate, and a second set of sensor pixels formed on the substrate. The sensor pixels of the first set are arranged in rows and columns and are configured to detect light within a first range of wavelengths (e.g., white light). The sensor pixels of the second set are arranged in rows and columns and are each configured to detect light within one of a set of ranges of wavelengths (e.g., red, green, and blue). Each range of wavelengths of the set of ranges of wavelengths is a subrange of said first range of wavelengths, and each pixel of the second set of pixels is smaller than each pixel of the first set of pixels.

公开(公告)号：US20170347047A1

公开(公告)日：2017-11-30

申请号：US15164276

申请日：2016-05-25

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Trygve Willassen ,  Johannes Solhusvik ,  Keiji Mabuchi ,  Gang Chen ,  Sohei Manabe ,  Dyson H. Tai ,  Bill Phan ,  Oray Orkun Cellek ,  Zhiqiang Lin ,  Siguang Ma ,  Dajiang Yang ,  Boyd Albert Fowler

IPC: H04N5/374 ,  H04N5/232

CPC classification number: H04N5/374 ,  H01L27/14612 ,  H01L27/14641 ,  H04N5/23229 ,  H04N5/3559 ,  H04N5/3592 ,  H04N5/37452 ,  H04N5/37457

Abstract: An image sensor for detecting light-emitting diode (LED) without flickering includes a pixel array with pixels. Each pixel including subpixels including a first and a second subpixel, dual floating diffusion (DFD) transistor, and a capacitor coupled to the DFD transistor. First subpixel includes a first photosensitive element to acquire a first image charge, and a first transfer gate transistor to selectively transfer the first image charge from the first photosensitive element to a first floating diffusion (FD) node. Second subpixel includes a second photosensitive element to acquire a second image charge, and a second transfer gate transistor to selectively transfer the second image charge from the second photosensitive element to a second FD node. DFD transistor coupled to the first and the second FD nodes. Other embodiments are also described.

公开(公告)号：US09564470B1

公开(公告)日：2017-02-07

申请号：US15272164

申请日：2016-09-21

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Yuanwei Zheng ,  Duli Mao ,  Dyson Tai

IPC: H01L31/18 ,  H01L27/146

CPC classification number: H01L27/14689 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685

Abstract: A method of image sensor fabrication includes forming a layer of dielectric material, a layer of gate material, and a layer of hard mask material. The layer of dielectric material is disposed between the layer of gate material and a semiconductor material, and the layer of gate material is disposed between the layer of hard mask material and the layer of dielectric material. The method also includes etching the layer of hard mask material and layer of gate material, and etching forms a transfer gate from the layer of gate material. An encapsulation material is deposited proximate to a surface of the semiconductor material. Trenches are etched in the encapsulation material. A first trench extends through the encapsulation material and the layer of dielectric material, and a second trench extends through the encapsulation material and the layer of hard mask material.

Abstract translation: 图像传感器制造的方法包括形成介电材料层，栅极材料层和硬掩模材料层。 介电材料层设置在栅极材料层和半导体材料之间，并且栅极材料层设置在硬掩模材料层和电介质材料层之间。 该方法还包括蚀刻硬掩模材料层和栅极材料层，并且蚀刻从栅极材料层形成传输栅极。 封装材料沉积在半导体材料的表面附近。 在封装材料中蚀刻沟槽。 第一沟槽延伸穿过封装材料和介电材料层，并且第二沟槽延伸穿过封装材料和硬掩模材料层。

公开(公告)号：US20160372507A1

公开(公告)日：2016-12-22

申请号：US14743385

申请日：2015-06-18

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dajiang Yang ,  Gang Chen ,  Oray Orkun Cellek ,  Zhenhong Fu ,  Chen-Wei Lu ,  Duli Mao ,  Dyson H. Tai

IPC: H01L27/146 ,  H04N5/374 ,  H04N5/355

CPC classification number: H01L27/14621 ,  H01L27/14603 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14645 ,  H04N5/35563 ,  H04N5/374

Abstract: An image sensor includes photodiodes arranged in semiconductor material. Each of the photodiodes is identically sized and is fabricated in the semiconductor material with identical semiconductor processing conditions. The photodiodes are organized into virtual large-small groupings including a first photodiode and a second photodiode. Microlenses are disposed over the semiconductor material with each of microlenses disposed over a respective photodiode. A first microlens is disposed over the first photodiode, and a second microlens is disposed over the second photodiode. A mask is disposed between the first microlens and the first photodiode. The mask includes an opening through which a first portion of incident light directed through the first microlens is directed to the first photodiode. A second portion of the incident light directed through the first microlens is blocked by the mask from reaching the first photodiode. There is no mask between the second microlens and the second photodiode.

Abstract translation: 图像传感器包括布置在半导体材料中的光电二极管。 每个光电二极管的尺寸相同，并且在具有相同半导体加工条件的半导体材料中制造。 光电二极管被组织成包括第一光电二极管和第二光电二极管的虚拟大小组。 微透镜设置在半导体材料上，每个微透镜设置在相应的光电二极管上。 第一微透镜设置在第一光电二极管的上方，第二微透镜设置在第二光电二极管的上方。 掩模设置在第一微透镜和第一光电二极管之间。 掩模包括开口，通过第一微透镜的入射光的第一部分通过该开口被引导到第一光电二极管。 通过第一微透镜的入射光的第二部分被掩模阻挡到达第一光电二极管。 在第二微透镜和第二光电二极管之间没有掩模。

公开(公告)号：US09491386B2

公开(公告)日：2016-11-08

申请号：US14559733

申请日：2014-12-03

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Qingfei Chen ,  Duli Mao ,  Han Lei Lock ,  Qingwei Shan

IPC: H04N5/374 ,  H04N5/378 ,  H04N5/63 ,  H04N5/335

CPC classification number: H04N5/3741 ,  H04N5/335 ,  H04N5/378 ,  H04N5/63

Abstract: A reset level in a pixel cell is boosted by switching ON a reset transistor of the pixel cell to charge the floating diffusion to a first reset level during a reset operation. A select transistor is switched from OFF to ON during the floating diffusion reset operation to discharge an output terminal of an amplifier transistor. The reset transistor is switched OFF after the output terminal of the amplifier transistor has been discharged in response to the switching ON of the select transistor. The output terminal of the amplifier transistor charges to a static level after being discharged. The floating diffusion coupled to the input terminal of the amplifier transistor follows the output terminal of the amplifier transistor across an amplifier capacitance coupled between the input terminal and the output terminal of the amplifier transistor to boost the reset level of the floating diffusion.

Abstract translation: 通过在复位操作期间接通像素单元的复位晶体管以将浮动扩散充电到第一复位电平来提高像素单元中的复位电平。 在浮动扩散复位操作期间，选择晶体管从OFF切换到ON，以放大放大器晶体管的输出端。 在放大晶体管的输出端已响应于选择晶体管的导通而放电之后，复位晶体管截止。 放大器晶体管的输出端子在放电后充电到静态电平。 耦合到放大器晶体管的输入端的浮动扩散器沿着放大器晶体管的输出端连接放大器电容，该放大器电容耦合在放大器晶体管的输入端和输出端之间，以提高浮置扩散的复位电平。

公开(公告)号：US20160227147A1

公开(公告)日：2016-08-04

申请号：US14612961

申请日：2015-02-03

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Dominic Massetti ,  Chih-Wei Hsiung ,  Arvind Kumar ,  Yuanwei Zheng ,  Duli Mao ,  Dyson H. Tai

IPC: H04N5/3745 ,  H04N5/378

CPC classification number: H04N9/045 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14647 ,  H04N5/37457

Abstract: A back side illuminated image sensor includes a pixel array including semiconductor material, and image sensor circuitry disposed on a front side of the semiconductor material to control operation of the pixel array. A first pixel includes a first doped region disposed proximate to a back side of the semiconductor material and extends into the semiconductor material a first depth to reach the image sensor circuitry. A second pixel with a second doped region is disposed proximate to the back side of the semiconductor material and extends into the semiconductor material a second depth which is less than the first depth. A third doped region is disposed between the second doped region and the image sensor circuitry front side of the semiconductor material. The third doped region is electrically isolated from the first doped region and the second doped region.

Abstract translation: 背面照明图像传感器包括包括半导体材料的像素阵列和设置在半导体材料的前侧上以控制像素阵列的操作的图像传感器电路。 第一像素包括靠近半导体材料的背面设置的第一掺杂区域，并延伸到半导体材料中以到达图像传感器电路的第一深度。 具有第二掺杂区域的第二像素设置在半导体材料的背面附近并且延伸到半导体材料中的比第一深度小的第二深度。 第三掺杂区域设置在第二掺杂区域和半导体材料的图像传感器电路正面之间。 第三掺杂区域与第一掺杂区域和第二掺杂区域电隔离。

公开(公告)号：US09305968B2

公开(公告)日：2016-04-05

申请号：US14825703

申请日：2015-08-13

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Yin Qian ,  Hsin-Chih Tai ,  Tiejun Dai ,  Duli Mao ,  Cunyu Yang ,  Howard E. Rhodes

IPC: H01L27/146 ,  H01L23/58 ,  H01L23/00

CPC classification number: H01L27/1469 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/585 ,  H01L24/05 ,  H01L24/08 ,  H01L24/94 ,  H01L27/14618 ,  H01L27/14636 ,  H01L27/14683 ,  H01L27/14689 ,  H01L2224/04042 ,  H01L2224/05567 ,  H01L2224/08145 ,  H01L2224/80896 ,  H01L2224/9202 ,  H01L2224/9212 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12043 ,  H01L2924/1434 ,  H01L2924/37001 ,  H01L2224/80 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2224/8203 ,  H01L2224/821 ,  H01L2224/80001 ,  H01L2224/82

Abstract: An integrated circuit system includes a first device wafer bonded to a second device wafer at a bonding interface of dielectrics. Each wafer includes a plurality of dies, where each die includes a device, a metal stack, and a seal ring that is formed at an edge region of the die. Seal rings included in dies of the second device wafer each include a first conductive path provided with metal formed in a first opening that extends from a backside of the second device wafer, through the second device wafer, and through the bonding interface to the seal ring of a corresponding die in the first device wafer.

公开(公告)号：US09305949B2

公开(公告)日：2016-04-05

申请号：US14070286

申请日：2013-11-01

Applicant: OmniVision Technologies, Inc.

Inventor： Gang Chen ,  Duli Mao ,  Dajiang Yang ,  Zhibin Xiong ,  Dyson H. Tai

IPC: H01L27/148 ,  H01L27/146

CPC classification number: H01L27/14614 ,  H01L27/14621 ,  H01L27/14641 ,  H01L27/14645

Abstract: An image sensor pixel for use in a high dynamic range image sensor includes a first photodiode, a plurality of photodiodes, a shared floating diffusion region, a first transfer gate, and a second transfer gate. The first photodiode is disposed in a semiconductor material. The first photodiode has a first light exposure area and a first doping concentration. The plurality of photodiodes is also disposed in the semiconductor material. Each photodiode in the plurality of photodiodes has the first light exposure area and the first doping concentration. The first transfer gate is coupled to transfer first image charge from the first photodiode to the shared floating diffusion region. The second transfer gate is coupled to transfer distributed image charge from each photodiode in the plurality of photodiodes to the shared floating diffusion region.

Abstract translation: 用于高动态范围图像传感器的图像传感器像素包括第一光电二极管，多个光电二极管，共享浮动扩散区，第一传输门和第二传输门。 第一光电二极管设置在半导体材料中。 第一光电二极管具有第一曝光区域和第一掺杂浓度。 多个光电二极管也设置在半导体材料中。 多个光电二极管中的每个光电二极管具有第一曝光区域和第一掺杂浓度。 第一传输栅极被耦合以将第一图像电荷从第一光电二极管传递到共享浮动扩散区域。 第二传输门被耦合以将分布图像电荷从多个光电二极管中的每个光电二极管传递到共享浮动扩散区域。