公开(公告)号：US20140113405A1

公开(公告)日：2014-04-24

申请号：US14055970

申请日：2013-10-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi TSUBUKU ,  Ryosuke WATANABE ,  Noritaka ISHIHARA ,  Masashi OOTA

IPC: H01L29/66

CPC classification number: H01L21/02422 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02664 ,  H01L27/1225 ,  H01L29/7869 ,  H01L29/78693

Abstract: To form an oxide semiconductor film with a low density of localized levels. To improve electric characteristics of a semiconductor device including the oxide semiconductor. After oxygen is added to an oxide film containing In or Ga in contact with an oxide semiconductor film functioning as a channel, heat treatment is performed to make oxygen in the oxide film containing In or Ga transfer to the oxide semiconductor film functioning as a channel, so that the amount of oxygen vacancies in the oxide semiconductor film is reduced. Further, an oxide film containing In or Ga is formed, oxygen is added to the oxide film, an oxide semiconductor film is formed over the oxide film, and then heat treatment is performed.

Abstract translation: 形成具有低密度局部化水平的氧化物半导体膜。 为了改善包括氧化物半导体的半导体器件的电特性。 在与用作沟道的氧化物半导体膜接触的含有In或Ga的氧化物膜上加氧后，进行热处理，使含有In或Ga的氧化物膜中的氧转移到作为通道发挥作用的氧化物半导体膜， 使得氧化物半导体膜中的氧空位量减少。 此外，形成含有In或Ga的氧化物膜，在氧化膜上添加氧，在氧化膜上形成氧化物半导体膜，然后进行热处理。

公开(公告)号：US20240321897A1

公开(公告)日：2024-09-26

申请号：US18616481

申请日：2024-03-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masahiro TAKAHASHI ,  Takuya HIROHASHI ,  Masashi TSUBUKU ,  Noritaka ISHIHARA ,  Masashi OOTA

IPC: H01L27/12 ,  C23C14/08 ,  G01N23/207 ,  G02F1/1368 ,  H01L21/02 ,  H01L21/66 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/1225 ,  C23C14/086 ,  G01N23/207 ,  G02F1/1368 ,  H01L22/12 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L2924/0002

Abstract: A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nmφ and less than or equal to 10 nmφ.

公开(公告)号：US20230363174A1

公开(公告)日：2023-11-09

申请号：US18245757

申请日：2021-09-09

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Yasuhiro JINBO ,  Hitoshi KUNITAKE ,  Kazuaki OHSHIMA ,  Masashi OOTA ,  Kazuma FURUTANI ,  Takeshi AOKI

IPC: H10B51/30 ,  H10B53/30 ,  H01L29/786 ,  H01L29/417 ,  H01L29/78

CPC classification number: H10B51/30 ,  H10B53/30 ,  H01L29/7869 ,  H01L29/41733 ,  H01L29/78696 ,  H01L29/78391

Abstract: A ferroelectric device including a metal oxide film having favorable ferroelectricity is provided. The ferroelectric device includes a first conductor, a metal oxide film over the first conductor, and a second conductor over the metal oxide film. The metal oxide film has ferroelectricity. The metal oxide film has a crystal structure. The crystal structure includes a first layer and a second layer. The first layer contains first oxygen and hafnium. The second layer contains second oxygen and zirconium. The hafnium and the zirconium are bonded to each other through the first oxygen. The second oxygen is bonded to the zirconium.

公开(公告)号：US20230335598A1

公开(公告)日：2023-10-19

申请号：US18213311

申请日：2023-06-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yasutaka NAKAZAWA ,  Masashi OOTA

IPC: H01L29/24 ,  H01L29/06 ,  H01L29/12 ,  H01L29/267 ,  H01L29/423 ,  H01L29/43 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L29/24 ,  H01L29/0692 ,  H01L29/12 ,  H01L29/267 ,  H01L29/4232 ,  H01L29/43 ,  H01L29/66045 ,  H01L21/02414 ,  H01L21/02428

Abstract: The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. A semiconductor layer of a transistor is formed using a composite oxide semiconductor in which a first region and a second region are mixed. The first region includes a plurality of first clusters containing one or more of indium, zinc, and oxygen as a main component. The second region includes a plurality of second clusters containing one or more of indium, an element M (M represents Al, Ga, Y, or Sn), zinc, and oxygen. The first region includes a portion in which the plurality of first clusters are connected to each other. The second region includes a portion in which the plurality of second clusters are connected to each other.

公开(公告)号：US20230040508A1

公开(公告)日：2023-02-09

申请号：US17788050

申请日：2020-12-14

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Tatsuya ONUKI ,  Munehiro KOZUMA ,  Takeshi AOKI ,  Takanori MATSUZAKI ,  Yuki OKAMOTO ,  Masashi OOTA ,  Shuhei NAGATSUKA ,  Hitoshi KUNITAKE ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  G06N3/02 ,  H01L29/423 ,  H01L27/105

Abstract: To provide a semiconductor device with a novel structure. The semiconductor device includes an accelerator. The accelerator includes a first memory circuit, a second memory circuit, and an arithmetic circuit. The first memory circuit includes a first transistor. The second memory circuit includes a second transistor. Each of the first transistor and the second transistor includes a semiconductor layer including a metal oxide in a channel formation region. The arithmetic circuit includes a third transistor. The third transistor includes a semiconductor layer including silicon in a channel formation region. The first transistor and the second transistor are provided in different layers. The layer including the first transistor is provided over a layer including the third transistor. The layer including the second transistor is provided over the layer including the first transistor. The data retention characteristics of the first memory circuit are different from those of the second memory circuit.

公开(公告)号：US20170301796A1

公开(公告)日：2017-10-19

申请号：US15634167

申请日：2017-06-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Noritaka ISHIHARA ,  Masashi OOTA ,  Masashi TSUBUKU ,  Masami JINTYOU ,  Yukinori SHIMA ,  Junichi KOEZUKA ,  Yasuharu HOSAKA ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/45 ,  H01L29/04 ,  H01L29/24 ,  H01L29/423 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/04 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78693 ,  H01L29/78696

Abstract: Defects in an oxide semiconductor film are reduced in a semiconductor device including the oxide semiconductor film. The electrical characteristics of a semiconductor device including an oxide semiconductor film are improved. The reliability of a semiconductor device including an oxide semiconductor film is improved. A semiconductor device including an oxide semiconductor layer; a metal oxide layer in contact with the oxide semiconductor layer, the metal oxide layer including an In-M oxide (M is Ti, Ga, Y, Zr, La, Ce, Nd, or Hf); and a conductive layer in contact with the metal oxide layer, the conductive layer including copper, aluminum, gold, or silver is provided. In the semiconductor device, y/(x+y) is greater than or equal to 0.75 and less than 1 where the atomic ratio of In to M included in the metal oxide layer is In:M=x:y.

公开(公告)号：US20170058393A1

公开(公告)日：2017-03-02

申请号：US15342332

申请日：2016-11-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masashi OOTA

IPC: C23C14/08 ,  G06F3/044 ,  G06F3/045 ,  H01L51/56 ,  C23C14/58 ,  H01L51/00 ,  H01L51/52 ,  G06F3/041 ,  C23C14/34

CPC classification number: C23C14/086 ,  C23C14/34 ,  C23C14/5806 ,  G02F1/13306 ,  G02F1/13338 ,  G02F2201/121 ,  G02F2201/123 ,  G06F3/0412 ,  G06F3/0416 ,  G06F3/044 ,  G06F3/045 ,  G06F2203/04103 ,  G06F2203/04104 ,  H01L51/0021 ,  H01L51/5203 ,  H01L51/56 ,  H01L2251/56

Abstract: One embodiment of the present invention provides a conductive oxide film having high conductivity and high transmittance of visible light. The conductive oxide film having high conductivity and high transmittance of visible light can be obtained by forming a conductive oxide film at a high substrate temperature in the film formation and subjecting the conductive oxide film to nitrogen annealing treatment. The conductive oxide film has a crystal structure in which c-axes are aligned in a direction perpendicular to a surface of the film.

Abstract translation: 本发明的一个实施方案提供了具有高导电性和高可见光透射率的导电氧化物膜。 可以通过在成膜中在高的基板温度下形成导电氧化膜并对导电氧化物膜进行氮退火处理来获得具有高导电性和高可见光透射率的导电氧化物膜。 导电氧化物膜具有其中c轴在垂直于膜的表面的方向上排列的晶体结构。

公开(公告)号：US20160343733A1

公开(公告)日：2016-11-24

申请号：US15226008

申请日：2016-08-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi OOTA ,  Noritaka ISHIHARA ,  Motoki NAKASHIMA ,  Yoichi KUROSAWA ,  Shunpei YAMAZAKI ,  Yasuharu HOSAKA ,  Toshimitsu OBONAI ,  Junichi KOEZUKA

IPC: H01L27/12 ,  H01L21/425 ,  H01L29/66 ,  H01L21/477

Abstract: To provide a method for manufacturing a semiconductor device including an oxide semiconductor film having conductivity, or a method for manufacturing a semiconductor device including an oxide semiconductor film having a light-transmitting property and conductivity. The method for manufacturing a semiconductor device includes the steps of forming an oxide semiconductor film over a first insulating film, performing first heat treatment in an atmosphere where oxygen contained in the oxide semiconductor film is released, and performing second heat treatment in a hydrogen-containing atmosphere, so that an oxide semiconductor film having conductivity is formed.

公开(公告)号：US20160181432A1

公开(公告)日：2016-06-23

申请号：US15053594

申请日：2016-02-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi TSUBUKU ,  Yusuke NONAKA ,  Noritaka ISHIHARA ,  Masashi OOTA ,  Hideyuki KISHIDA

IPC: H01L29/786 ,  H01L21/477 ,  H01L29/66 ,  H01L29/04

CPC classification number: H01L29/7869 ,  H01L21/02565 ,  H01L21/477 ,  H01L29/045 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78696

Abstract: Reducing hydrogen concentration in a channel formation region of an oxide semiconductor is important in stabilizing threshold voltage of a transistor including an oxide semiconductor and improving reliability. Hence, hydrogen is attracted from the oxide semiconductor and trapped in a region of an insulating film which overlaps with a source region and a drain region of the oxide semiconductor. Impurities such as argon, nitrogen, carbon, phosphorus, or boron are added to the region of the insulating film which overlaps with the source region and the drain region of the oxide semiconductor, thereby generating a defect. Hydrogen in the oxide semiconductor is attracted to the defect in the insulating film. The defect in the insulating film is stabilized by the presence of hydrogen.

公开(公告)号：US20160160342A1

公开(公告)日：2016-06-09

申请号：US15006607

申请日：2016-01-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masashi TSUBUKU ,  Masashi OOTA ,  Yoichi KUROSAWA ,  Noritaka ISHIHARA

IPC: C23C14/34 ,  C01G15/00 ,  C30B29/22 ,  H01J37/34 ,  C30B23/08

CPC classification number: H01L21/02631 ,  B82Y30/00 ,  C01G15/006 ,  C01P2002/32 ,  C01P2002/72 ,  C01P2002/85 ,  C01P2004/04 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2004/64 ,  C23C14/08 ,  C23C14/086 ,  C23C14/3414 ,  C30B1/04 ,  C30B23/08 ,  C30B28/02 ,  C30B29/22 ,  C30B29/68 ,  H01J37/3429 ,  H01J2237/081 ,  H01J2237/3322 ,  H01J2237/3323 ,  H01L21/02565 ,  H01L21/02609 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.

Abstract translation: 提供一种可以形成具有少量缺陷的氧化物半导体膜的溅射靶的制造方法。 或者，形成具有少量缺陷的氧化物半导体膜。 提供一种制造溅射靶的方法，其包括以下步骤：形成多晶In-M-Zn氧化物（M表示选自铝，钛，镓，钇，锆，镧，铯，钕和铪中的金属 ）粉末，通过混合，烧结和研磨氧化铟，金属氧化物和氧化锌; 通过混合多晶In-M-Zn氧化物粉末和氧化锌粉末形成混合物; 通过压实混合物形成压块; 并烧结成型。