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61 条记录 (耗时 0.018 秒)

    Semiconductor Device with Corner Reflector
    41.
    发明申请
    Semiconductor Device with Corner Reflector 有权
    具有角反射器的半导体器件

    公开(公告)号：US20090080481A1

    公开(公告)日：2009-03-26

    申请号：US12208814

    申请日：2008-09-11

    申请人： Hans LINDBERG ,  Stefan Illek

    发明人： Hans LINDBERG ,  Stefan Illek

    IPC分类号： H01S5/00 ,  H01S3/0941

    CPC分类号： H01S5/026 ,  H01S5/041 ,  H01S5/1071 ,  H01S5/1085 ,  H01S5/183 ,  H01S5/4025 ,  H01S5/4056

    摘要： A semiconductor laser device (5) comprising at least one semiconductor laser chip (7) is provided, wherein the semiconductor laser chip (7) contains an active layer that emits electromagnetic radiation. Further, at least one corner reflector (1) is formed in the semiconductor laser chip (7). The corner reflector (1) has a first and a second reflective surface (14, 15), wherein the first and the second reflective surface (14, 15) are arranged at an angle of less than 90 degrees with respect to one another. This results in an improved emission characteristic of the radiation emitted by the semiconductor laser device (5).

    摘要翻译： 提供了包括至少一个半导体激光器芯片（7）的半导体激光器件（5），其中半导体激光器芯片（7）包含发射电磁辐射的有源层。 此外，在半导体激光芯片（7）中形成至少一个角部反射器（1）。 角部反射器（1）具有第一和第二反射表面（14,15），其中第一和第二反射表面（14,15）相对于彼此以小于90度的角度布置。 这导致半导体激光装置（5）发射的辐射的发射特性得到改善。

    Method for producing a light-emitting semiconductor component
    44.
    发明授权
    Method for producing a light-emitting semiconductor component 有权
    发光半导体元件的制造方法

    公开(公告)号：US06929966B2

    公开(公告)日：2005-08-16

    申请号：US10723266

    申请日：2003-11-25

    申请人： Stefan Illek ,  Andreas Ploessl

    发明人： Stefan Illek ,  Andreas Ploessl

    IPC分类号： H01L33/24 ,  H01L33/30 ,  H01L33/40 ,  H01L21/00

    CPC分类号： H01L33/405 ,  H01L33/20 ,  H01L33/30 ,  H01L33/40

    摘要： A method for producing a light-emitting semiconductor component having a thin-film layer sequence (14), in which a photon-emitting active zone (17) is formed. The thin-film layer sequence (14) is formed on a growth substrate. A reflection contact layer (40) is formed having contact with the thin-film layer sequence. A diffusion barrier layer (42) is applied to the reflection contact layer (40), and a solder contact layer (44) is applied to the diffusion barrier layer (42). The reflection contact layer (40), after it has been formed and before the diffusion barrier layer (42) is applied, is subjected to heat treatment for the purpose of producing an ohmic contact, and the surface of the reflection contact layer (40) is cleaned with a first etching solution after the heat treatment. As an alternative, the reflection contact layer (40) is subjected to heat treatment after the application of the solder contact layer (44) to the diffusion barrier layer (42) for the purpose of producing an ohmic contact.

    摘要翻译： 一种具有薄膜层序列（14）的发光半导体元件的制造方法，其中形成有发光的有源区（17）。 在生长衬底上形成薄膜层序列（14）。 形成与薄膜层序列接触的反射接触层（40）。 向反射接触层（40）施加扩散阻挡层（42），向扩散阻挡层（42）施加焊料接触层（44）。 反射接触层（40）在其形成之后并且在施加扩散阻挡层（42）之前，经受热处理以产生欧姆接触，并且反射接触层（40）的表面 在热处理后用第一蚀刻溶液进行清洗。 作为替代，为了产生欧姆接触，在将焊料接触层（44）施加到扩散阻挡层（42）之后，反射接触层（40）进行热处理。

    Lighting device
    47.
    发明授权
    Lighting device 有权
    照明设备

    公开(公告)号：US09029878B2

    公开(公告)日：2015-05-12

    申请号：US13522508

    申请日：2011-01-17

    申请人： Matthias Sabathil ,  Norwin von Malm ,  Lutz Hoeppel ,  Stefan Illek ,  Bernd Barchmann ,  Patrick Rode

    发明人： Matthias Sabathil ,  Norwin von Malm ,  Lutz Hoeppel ,  Stefan Illek ,  Bernd Barchmann ,  Patrick Rode

    IPC分类号： H01L33/08 ,  H01L25/075 ,  H01L33/22 ,  H01L33/50 ,  H01L33/58 ,  H01L33/62

    CPC分类号： H01L25/0753 ,  H01L33/22 ,  H01L33/507 ,  H01L33/58 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A lighting device with front carrier, rear carrier and plurality of light-emitting diode chips, which when in operation emits light and releases waste heat, wherein rear carrier is covered at least in selected locations by front carrier, light-emitting diode chips are arranged between rear carrier and front carrier to form array, light-emitting diodes are contacted electrically by rear and/or front carrier and immobilized mechanically by rear carrier and front carrier, front carrier is coupled thermally conductively to light-emitting diode chips and includes light outcoupling face remote from light-emitting diode chips, which light outcoupling face releases some of waste heat released by light-emitting diode chips into surrounding environment, each light-emitting diode chip is actuated with electrical nominal power of 100 mW or less when lighting device is in operation and has light yield of 100 lm/W or more.

    摘要翻译： 一种具有前载体，后载体和多个发光二极管芯片的照明装置，其在运行时发光并释放废热，其中后载体至少在前载体上被选定的位置覆盖，发光二极管芯片布置 在后载体和前载体之间形成阵列，发光二极管由后和/或前载体电接触并由后载体和前载体机械固定，前载体热传导耦合到发光二极管芯片，并且包括光输出耦合 面对远离发光二极管芯片的光输出耦合面将发光二极管芯片释放的一部分废热释放到周围环境中，当发光二极管芯片的照明装置为100mW或更小时，每个发光二极管芯片的功率为100mW 具有100 lm / W以上的光收率。

    Display Device
    48.
    发明申请
    Display Device 审中-公开
    显示设备

    公开(公告)号：US20140085169A1

    公开(公告)日：2014-03-27

    申请号：US14110412

    申请日：2012-03-01

    申请人： Stefan Illek ,  Norwin von Malm ,  Tilman Ruegheimer

    发明人： Stefan Illek ,  Norwin von Malm ,  Tilman Ruegheimer

    IPC分类号： G09G3/32

    CPC分类号： G09G3/3208 ,  G09G3/32 ,  H01L25/0753

    摘要： A display device includes a multiplicity of pixels, at least one connection carrier, and a multiplicity of inorganic light-emitting diode chips. The connection carrier includes a multiplicity of switches. Each pixel contains at least one light-emitting diode chip. Each light-emitting diode chip is mechanically fixed and electrically connected to the connection carrier. Each switch is designed for driving at least one light-emitting diode chip and the light-emitting diode chips are imaging elements of the display device.

    摘要翻译： 显示装置包括多个像素，至少一个连接载体和多个无机发光二极管芯片。 连接载体包括多个开关。 每个像素包含至少一个发光二极管芯片。 每个发光二极管芯片被机械地固定并电连接到连接载体上。 每个开关被设计用于驱动至少一个发光二极管芯片，并且发光二极管芯片是显示装置的成像元件。

    METHOD OF PRODUCING AT LEAST ONE OPTOELECTRONIC SEMICONDUCTOR CHIP
    49.
    发明申请
    METHOD OF PRODUCING AT LEAST ONE OPTOELECTRONIC SEMICONDUCTOR CHIP 有权
    生产至少一个光电半导体芯片的方法

    公开(公告)号：US20140051194A1

    公开(公告)日：2014-02-20

    申请号：US14004442

    申请日：2012-03-12

    申请人： Siegfried Herrmann ,  Stefan Illek

    发明人： Siegfried Herrmann ,  Stefan Illek

    IPC分类号： H01L33/60

    CPC分类号： H01L33/60 ,  H01L24/19 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/382 ,  H01L33/44 ,  H01L33/46 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01S5/0201 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/32341 ,  H01L2924/00

    摘要： A method of producing at least one optoelectronic semiconductor chip includes providing at least one optoelectronic structure, including a growth support and a semiconductor layer sequence with an active region, the semiconductor layer sequence being deposited epitaxially on the growth support, providing a carrier, applying the at least one optoelectronic structure onto the carrier with its side remote from the growth support, coating the at least one optoelectronic structure with a protective material, the protective material covering the outer face, remote from the carrier, of the growth support and side faces of the growth support and of the semiconductor layer sequence, and detaching the growth support from the semiconductor layer sequence of the at least one optoelectronic structure.

    摘要翻译： 一种制造至少一个光电子半导体芯片的方法包括：提供至少一个光电结构，包括生长支持体和具有有源区域的半导体层序列，半导体层序列外延地沉积在生长支持体上，提供载体， 至少一个光电结构到其载体上，其侧面远离生长载体，用保护材料涂覆至少一个光电结构，该保护材料覆盖远离载体的生长载体和侧面的外表面 生长支持物和半导体层序列，以及从至少一个光电子结构的半导体层序列分离生长支持物。