公开(公告)号：US20140167059A1

公开(公告)日：2014-06-19

申请号：US14014904

申请日：2013-08-30

Applicant: The Regents of the University of California

Inventor： Chung-Ta Hsu ,  Chia-Yen Huang ,  Yuji Zhao ,  Shih-Chieh Haung ,  Daniel F. Feezell ,  Steven P. DenBaars ,  Shuji Nakamura ,  James S. Speck

IPC: H01L33/00 ,  H01L33/32

CPC classification number: H01L33/0075 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/16 ,  H01L33/32

Abstract: A method of performing a photoelectrochemical (PEC) etch on an exposed surface of a semipolar {20-2-1} III-nitride semiconductor, for improving light extraction from and for enhancing external efficiency of one or more active layers formed on or above the semipolar {20-2-1} III-nitride semiconductor.

Abstract translation: 在半极{20-2-1} III-氮化物半导体的暴露表面上执行光电化学（PEC）蚀刻的方法，用于改善从或在其上形成的一个或多个活性层的光提取和增强外部效率 半极性{20-2-1} III族氮化物半导体。

公开(公告)号：US20140138679A1

公开(公告)日：2014-05-22

申请号：US14164434

申请日：2014-01-27

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Asako Hirai ,  Zhongyuan Jia ,  Makoto Saito ,  Hisashi Yamada ,  Kenji Iso ,  Steven P. DenBaars ,  Shuji Nakamura ,  James S. Speck

IPC: H01L21/02 ,  H01L29/26 ,  H01L29/16 ,  H01L29/04 ,  H01L29/20

CPC classification number: C30B29/406 ,  C30B23/025 ,  C30B23/066 ,  C30B25/18 ,  C30B25/186 ,  C30B25/20 ,  C30B29/403 ,  C30B29/60 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02565 ,  H01L21/02609 ,  H01L21/02617 ,  H01L21/02636 ,  H01L29/04 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/26 ,  H01L31/03044 ,  H01L31/036 ,  H01L31/1856 ,  H01L33/0075 ,  H01L33/16 ,  H01L33/32 ,  H01S5/34333 ,  Y10T428/24612

Abstract: A nonpolar III-nitride film grown on a miscut angle of a substrate, in order to suppress the surface undulations, is provided. The surface morphology of the film is improved with a miscut angle towards an a-axis direction comprising a 0.15° or greater miscut angle towards the a-axis direction and a less than 30° miscut angle towards the a-axis direction.

公开(公告)号：US20140116326A1

公开(公告)日：2014-05-01

申请号：US14149121

申请日：2014-01-07

Applicant: The Regents of the University of California

Inventor： Siddha Pimputkar ,  Derrick Shane Kamber ,  James S. Speck ,  Shuji Nakamura

IPC: C30B7/10

CPC classification number: C30B7/105 ,  B01D9/0013 ,  B01D9/0031 ,  C30B7/10 ,  C30B29/40 ,  C30B29/403 ,  H01L21/67109 ,  Y10T117/1096 ,  Y10T428/24355

Abstract: Reactor designs for use in ammonothermal growth of group-III nitride crystals. Internal heating is used to enhance and/or engineer fluid motion, gas mixing, and the ability to create solubility gradients within a vessel used for the ammonothermal growth of group-III nitride crystals. Novel baffle designs are used for control and improvement of continuous fluid motion within a vessel used for the ammonothermal growth of group-III nitride crystals.

Abstract translation: 用于III族氮化物晶体的氨热生长的反应器设计。 内部加热用于增强和/或设计流体运动，气体混合以及在用于III族氮化物晶体的氨热生长的容器内产生溶解度梯度的能力。 新型挡板设计用于控制和改进用于III族氮化物晶体的氨热生长的容器内的连续流体运动。

公开(公告)号：US20130340672A1

公开(公告)日：2013-12-26

申请号：US13971355

申请日：2013-08-20

Applicant: The Regents of the University of California

Inventor： Siddha Pimputkar ,  Derrick S. Kamber ,  James S. Speck ,  Shuji Nakamura

IPC: C30B7/10

CPC classification number: C30B7/105 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0254 ,  H01L29/045 ,  H01L29/2003

Abstract: Boron-containing compounds, gasses and fluids are used during ammonothermal growth of group-III nitride crystals. Boron-containing compounds are used as impurity getters during the ammonothermal growth of group-III nitride crystals. In addition, a boron-containing gas and/or supercritical fluid is used for enhanced solubility of group-III nitride into said fluid.

Abstract translation: 在III族氮化物晶体的氨热生长过程中使用含硼化合物，气体和流体。 在III族氮化物晶体的氨热生长过程中，含硼化合物用作杂质吸附剂。 此外，含硼气体和/或超临界流体用于提高III族氮化物在所述流体中的溶解度。

公开(公告)号：US20130299777A1

公开(公告)日：2013-11-14

申请号：US13890664

申请日：2013-05-09

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Shuji Nakamura ,  Steven P. DenBaars ,  Daniel F. Feezell ,  James S. Speck ,  Chih-Chien Pan

IPC: H01L33/16 ,  H01L33/00

CPC classification number: H01L33/16 ,  H01L33/0075 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A III-nitride based LED with an External Quantum Efficiency (EQE) droop of less than 10% when a junction temperature of the LED is increased from 20 ° C. to at least 100 ° C. at a current density of the LED of at least 20 Amps per centimeter square.

Abstract translation: 当LED的结温从20℃增加到至少100℃时，具有小于10％的具有外部量子效率（EQE）的III族氮化物基LED，其LED的电流密度在 每平方厘米最少20安培

公开(公告)号：US20130214284A1

公开(公告)日：2013-08-22

申请号：US13767739

申请日：2013-02-14

Applicant: The Regents of the University of California

Inventor： Casey O. Holder ,  Daniel F. Feezell ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L29/20 ,  H01L21/02

CPC classification number: H01L21/7813 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/30612 ,  H01L21/30635 ,  H01L29/2003 ,  H01L31/03044 ,  H01L31/1856 ,  H01L31/1892 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/32 ,  H01S5/0217 ,  H01S5/183 ,  H01S5/18341 ,  H01S5/18347 ,  H01S5/187 ,  H01S5/2009 ,  H01S5/34333 ,  H01S2304/04

Abstract: A method for the reuse of gallium nitride (GaN) epitaxial substrates uses band-gap-selective photoelectrochemical (PEC) etching to remove one or more epitaxial layers from bulk or free-standing GaN substrates without damaging the substrate, allowing the substrate to be reused for further growth of additional epitaxial layers. The method facilitates a significant cost reduction in device production by permitting the reuse of expensive bulk or free-standing GaN substrates.

公开(公告)号：US20130099180A1

公开(公告)日：2013-04-25

申请号：US13659389

申请日：2012-10-24

Applicant: The Regents of the University of California

Inventor： Siddha Pimputkar ,  Paul M. von Dollen ,  James S. Speck ,  Shuji Nakamura

IPC: C30B7/10

CPC classification number: C30B7/105 ,  C30B29/403 ,  Y10T117/1096

Abstract: Alkaline-earth metals are used to reduce impurity incorporation into a Group-III nitride crystal grown using the ammonothermal method.

Abstract translation: 使用碱土金属来减少掺入使用氨热法生长的III族氮化物晶体中的杂质。

公开(公告)号：US20240258771A1

公开(公告)日：2024-08-01

申请号：US18559654

申请日：2022-05-09

Applicant: The Regents of the University of California

Inventor： Philip Chan ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01S5/343 ,  H01S5/20

CPC classification number: H01S5/34333 ,  H01S5/2068 ,  H01S2301/173

Abstract: A III-nitride based device is fabricated having an in-plane lattice constant or strain that is more than 30% biaxially relaxed, by creating a III-nitride based decomposition stop layer on or above a III-nitride based decomposition layer, wherein a temperature is increased to decompose the III-nitride based decomposition layer; and growing a III-nitride based device structure on or above the III-nitride based decomposition stop layer. The III-nitride based device structure includes at least one of an n-type layer, active layer, and p-type layer, and at least one of the n-type layer, active layer and p-type layer has an in-plane lattice constant or strain that is preferably more than 30% biaxially relaxed, more preferably 50% or more biaxially relaxed, and most preferably at least 70% biaxially relaxed.

公开(公告)号：US20230275185A1

公开(公告)日：2023-08-31

申请号：US18310963

申请日：2023-05-02

Applicant: The Regents of the University of California

Inventor： Tetsuo Fujii ,  Yan Gao ,  Evelyn L. Hu ,  Shuji Nakamura

IPC: H01L33/22 ,  H01L33/32 ,  H01L33/00 ,  H01L33/60

CPC classification number: H01L33/22 ,  H01L33/007 ,  H01L33/0093 ,  H01L33/32 ,  H01L33/60 ,  H01L33/50

Abstract: A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) of the LED and a surface of the N-face is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.

公开(公告)号：US20230187573A1

公开(公告)日：2023-06-15

申请号：US17926046

申请日：2021-05-28

Applicant: The Regents of the University of California

Inventor： Vincent Rienzi ,  Christian J. Zollner ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  A61L2/10 ,  A61L2/26 ,  C09K11/64 ,  C09K11/08 ,  C09K11/77

CPC classification number: H01L33/0025 ,  H01L33/06 ,  H01L33/325 ,  H01L33/007 ,  A61L2/10 ,  A61L2/26 ,  C09K11/64 ,  C09K11/0883 ,  C09K11/77066 ,  A61L2202/11 ,  A61L2202/25

Abstract: A III-nitride LED with simultaneous visible and ultraviolet (UV) emission, in which the visible emission is due to conventional InGaN active region mechanisms and the UV emission occurs due to Auger carrier injection into a UV light emitting region, such as impurity-doped AlGaN. The primary application for the III-nitride LED is general airborne pathogen inactivation to prevent the transmission of airborne-mediated pathogens while being safe for humans.