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    Filter function-equipped optical sensor and flame sensor
    43.
    发明申请
    Filter function-equipped optical sensor and flame sensor 有权
    配有滤光功能的光学传感器和火焰传感器

    公开(公告)号：US20070008539A1

    公开(公告)日：2007-01-11

    申请号：US10550824

    申请日：2004-03-23

    申请人： Akira Hirano ,  Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki

    发明人： Akira Hirano ,  Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki

    IPC分类号： G01N21/00 ,  G08B17/12

    CPC分类号： G02B5/284

    摘要： In order to provide a filter device capable of maintaining stable optical characteristics for an extended period of time and to provide also a photosensor using the filter device, a photosensor having a filter function includes a filter device having a colored glass filter and configured for permitting transmission of light of a predetermined wavelength range including a detection target wavelength range and a light receiving device for receiving the light transmitted through the filter device. The filter device includes a first interference filter structure comprised of a plurality of light transmitting layers stacked on each other, the first interference filter structure being deposited on a face of the colored glass filter. The light receiving device includes a semiconductor photodetector structure having one or more semiconductor layers, a light receiving area being formed in the one or more semiconductor layers within the semiconductor photodetector structure. The one or more semiconductor layers forming the semiconductor photodetector structure contain InxAlyGa1-x-yN (0≦x≦0.21, 0≦y≦1).

    摘要翻译： 为了提供能够延长长时间保持稳定的光学特性并且还提供使用滤光器装置的光传感器的滤光器装置，具有滤光器功能的光传感器包括具有彩色玻璃滤光器并被配置为允许透射的滤光器装置 包括检测目标波长范围的预定波长范围的光和用于接收透过过滤装置的光的光接收装置。 滤波器装置包括由彼此堆叠的多个透光层组成的第一干涉滤光器结构，第一干涉滤光器结构沉积在着色玻璃滤光片的表面上。 光接收装置包括具有一个或多个半导体层的半导体光电检测器结构，在半导体光电检测器结构内的一个或多个半导体层中形成有光接收区域。 形成半导体光电检测器结构的一个或多个半导体层包含In（x）Al（x，y） ，0 <= y <= 1）。

    Method for fabricating nitride semiconductor device
    45.
    发明授权
    Method for fabricating nitride semiconductor device 有权
    氮化物半导体器件的制造方法

    公开(公告)号：US06518082B1

    公开(公告)日：2003-02-11

    申请号：US09805767

    申请日：2001-03-16

    申请人： Isao Kidoguchi ,  Akihiko Ishibashi ,  Masahiro Kume ,  Yuzaburo Ban ,  Satoshi Kamiyama

    发明人： Isao Kidoguchi ,  Akihiko Ishibashi ,  Masahiro Kume ,  Yuzaburo Ban ,  Satoshi Kamiyama

    IPC分类号： H01L2100

    CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L33/007 ,  H01S5/32341 ,  H01S5/34333

    摘要： First, the substrate temperature is set to 1020° C., and an n-type cladding layer (14) made of n-type Al0.1Ga0.9N, an n-type optical guide layer (15) made of n-type GaN, and a flatness maintenance layer (16) made of n-type Al0.2Ga0.8N for maintaining the surface flatness of the n-type optical guide layer (15) by suppressing re-evaporation of the constituent atoms of the n-type optical guide layer (15), are grown in this order on a substrate (11) made of sapphire. Then, the supply of a group III material gas is stopped, the substrate temperature is decreased to 780° C., and the carrier gas is switched from a hydrogen gas to a nitrogen gas. Then, an active layer (17) having a multiple quantum well structure is grown by introducing NH3 as a group V source and selectively introducing TMI and TMG as a group III source.

    摘要翻译： 首先，将衬底温度设定为1020℃，由n型Al 0.1 Ga 0.9 N构成的n型覆层（14），由n型GaN构成的n型光导层（15） 以及由n型Al 0.2 Ga 0.8 N制成的平面维持层（16），用于通过抑制n型光导体（15）的构成原子的再蒸发来维持n型光导层（15）的表面平坦度 引导层（15）依次生长在由蓝宝石制成的基板（11）上。 然后，停止供给III族原料气体，将基板温度降低至780℃，并将载气从氢气切换为氮气。 然后，通过引入NH 3作为V族源并选择性地引入作为III族源的TMI和TMG，生长具有多量子阱结构的活性层（17）。

    Light-emitting diode device
    46.
    发明授权
    Light-emitting diode device 有权
    发光二极管装置

    公开(公告)号：US06169296A

    公开(公告)日：2001-01-02

    申请号：US09176906

    申请日：1998-10-22

    申请人： Satoshi Kamiyama ,  Shigeo Yoshii ,  Ryoko Miyanaga ,  Takashi Nishikawa ,  Tohru Saitoh ,  Yoichi Sasai

    发明人： Satoshi Kamiyama ,  Shigeo Yoshii ,  Ryoko Miyanaga ,  Takashi Nishikawa ,  Tohru Saitoh ,  Yoichi Sasai

    IPC分类号： H01L3300

    CPC分类号： H01L33/40 ,  H01L33/145 ,  H01L33/38 ,  H01L33/42

    摘要： The light-emitting diode device of the present invention includes an active layer, a p-type contact layer, a Schottky electrode and an ohmic electrode. The active layer is formed over an n-type semiconductor substrate. The contact layer is formed over the active layer. The Schottky electrode is selectively formed on the contact layer and makes Schottky contact with the contact layer. The ohmic electrode is formed to surround the Schottky electrode on the contact layer and to be electrically connected to the Schottky electrode and transmits the light emitted from the active layer.

    摘要翻译： 本发明的发光二极管器件包括有源层，p型接触层，肖特基电极和欧姆电极。 有源层形成在n型半导体衬底上。 接触层形成在有源层上。 肖特基电极选择性地形成在接触层上并与接触层进行肖特基接触。 欧姆电极形成为围绕接触层上的肖特基电极并与肖特基电极电连接并透射从有源层发射的光。

    Semiconductor laser
    48.
    发明授权
    Semiconductor laser 失效
    半导体激光器

    公开(公告)号：US5619520A

    公开(公告)日：1997-04-08

    申请号：US523189

    申请日：1995-09-05

    申请人： Yoichi Sasai ,  Nobuyuki Uemura ,  Satoshi Kamiyama ,  Minoru Kubo ,  Takashi Nishikawa

    发明人： Yoichi Sasai ,  Nobuyuki Uemura ,  Satoshi Kamiyama ,  Minoru Kubo ,  Takashi Nishikawa

    IPC分类号： H01S5/223 ,  H01S5/347 ,  H01S3/18

    CPC分类号： B82Y20/00 ,  H01S5/347 ,  H01S5/2231

    摘要： A semiconductor laser of this invention includes: a semiconductor substrate; a first cladding layer made of first conductivity type ZnMgSSe, which is held by the semiconductor substrate and lattice-matches with the semiconductor substrate; a stripe-shaped second cladding layer made of second conductivity type ZnMgSSe lattice-matching with the semiconductor substrate; a light-emitting layer including a first and a second light guiding layers made of Zn.sub.1-x Mg.sub.x S.sub.1-y Se.sub.y (0.ltoreq.x

    摘要翻译： 本发明的半导体激光器包括：半导体衬底; 由第一导电型ZnMgSSe制成的第一包层，其由半导体衬底保持并与半导体衬底晶格匹配; 由与半导体基板的第二导电型ZnMgSSe晶格匹配构成的条状的第二包层; 包括由Zn1-xMgxS1-ySey（0≤x≤1,0

    Method for producing a semiconductor laser
    49.
    发明授权
    Method for producing a semiconductor laser 失效
    半导体激光器的制造方法

    公开(公告)号：US5523256A

    公开(公告)日：1996-06-04

    申请号：US278395

    申请日：1994-07-21

    申请人： Hideto Adachi ,  Isao Kidoguchi ,  Kiyoshi Ohnaka ,  Satoshi Kamiyama

    发明人： Hideto Adachi ,  Isao Kidoguchi ,  Kiyoshi Ohnaka ,  Satoshi Kamiyama

    IPC分类号： H01S5/065 ,  H01S5/10 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01L21/20

    CPC分类号： H01S5/10 ,  H01S5/2231 ,  H01S5/0655 ,  H01S5/0658 ,  H01S5/106 ,  H01S5/1064 ,  H01S5/209 ,  H01S5/2206 ,  H01S5/2219 ,  H01S5/222 ,  H01S5/32325

    摘要： A semiconductor laser according to the present invention includes: a semiconductor substrate; a multilayer structure provided on the semiconductor substrate, the multilayer structure including an active layer, a pair of cladding layers interposing the active layer, and current confining portion for injecting a current into a stripe-shaped predetermined region of the active layer, wherein the current confining portion includes a first current confining layer formed in regions excluding a region corresponding to the predetermined region of the active layer, the first current confining layer having an energy band gap larger than an energy band gap of the active layer and having a refractive index smaller than a refractive index of the active layer.

    摘要翻译： 根据本发明的半导体激光器包括：半导体衬底; 设置在所述半导体衬底上的多层结构，所述多层结构包括有源层，插入所述有源层的一对包覆层以及用于将电流注入到所述有源层的条形预定区域中的电流限制部分，其中，所述电流 限制部分包括形成在除了与有源层的预定区域相对应的区域之外的区域中的第一电流限制层，第一电流限制层具有大于有源层的能带隙的能带隙并具有更小的折射率 比活性层的折射率高。