公开(公告)号：US07019333B1

公开(公告)日：2006-03-28

申请号：US09713242

申请日：2000-11-16

申请人： Andrew J. Shields ,  Richard A. Hogg

发明人： Andrew J. Shields ,  Richard A. Hogg

IPC分类号： H01L29/225 ,  H01L5/00

CPC分类号： H01S5/3412 ,  B82Y10/00 ,  B82Y20/00 ,  H01S5/0078 ,  H01S5/02284 ,  H01S5/028 ,  H01S5/06203 ,  H01S5/1042 ,  H01S5/18394 ,  Y10S977/95

摘要： A photon source comprising: a quantum dot (21) having a first confined energy level capable of being populated with an electron and a second confined energy level capable of being populated by a hole; and supply means (23) for supplying carriers to the said energy levels, wherein the supply means are configured to supply a predetermined number of carriers to at least one of the energy levels to allow recombination of a predetermined number of carriers in said quantum dot to emit at least one photon.

摘要翻译： 一种光子源，包括：量子点（21），其具有能够填充电子的第一限定能级和能够由孔填充的第二约束能级; 以及用于向所述能量级提供载体的供给装置（23），其中所述供给装置被配置为向所述能级中的至少一个提供预定数量的载流子，以允许将所述量子点中的预定数量的载流子复合到 发射至少一个光子。

公开(公告)号：US20050285138A1

公开(公告)日：2005-12-29

申请号：US11165848

申请日：2005-06-17

申请人： Robert Burgener ,  Roger Felix ,  Gary Renlund

发明人： Robert Burgener ,  Roger Felix ,  Gary Renlund

IPC分类号： C01G9/02 ,  H01L21/00 ,  H01L21/28 ,  H01L21/31 ,  H01L21/3115 ,  H01L21/316 ,  H01L21/363 ,  H01L21/365 ,  H01L21/469 ,  H01L23/58 ,  H01L27/15 ,  H01L29/225 ,  H01L29/26 ,  H01L31/0296 ,  H01L31/0328 ,  H01L31/12 ,  H01L33/28 ,  H01S5/30 ,  H01S5/327 ,  H01S5/347

CPC分类号： H01L21/02551 ,  B82Y20/00 ,  C01G9/02 ,  C01P2006/40 ,  C30B25/02 ,  C30B29/16 ,  C30B29/48 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02568 ,  H01L21/02579 ,  H01L21/3115 ,  H01L21/316 ,  H01L23/5329 ,  H01L29/225 ,  H01L31/02963 ,  H01L33/025 ,  H01L33/28 ,  H01L33/285 ,  H01L2924/0002 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/327 ,  H01S5/347 ,  H01L2924/00

摘要： A persistent p-type group II-VI semiconductor material is disclosed containing atoms of group II elements, atoms of group VI elements, and a p-type dopant which replaces atoms of the group VI element in the semiconductor material. The p-type dopant has a negative oxidation state. The p-type dopant causes formation of vacancies of atoms of the group II element in the semiconductor material. Fabrication methods and solid state devices containing the group II-VI semiconductor material are disclosed.

摘要翻译： 公开了一种持续性的p型II-VI族半导体材料，其包含II族元素的原子，VI族元素的原子和替代半导体材料中的VI族元素的原子的p型掺杂剂。 p型掺杂剂具有负氧化态。 p型掺杂剂导致在半导体材料中形成II族元素的原子空位。 公开了含有II-VI族半导体材料的制造方法和固态器件。

公开(公告)号：US20050161689A1

公开(公告)日：2005-07-28

申请号：US11005505

申请日：2004-12-06

申请人： Jagdish Narayan ,  Jinlin Ye ,  Schang-Jing Hon ,  Ken Fox ,  Jyh Chen ,  Hong Choi ,  John Fan

发明人： Jagdish Narayan ,  Jinlin Ye ,  Schang-Jing Hon ,  Ken Fox ,  Jyh Chen ,  Hong Choi ,  John Fan

IPC分类号： H01L33/06 ,  H01L33/32 ,  H01S5/10 ,  H01S5/34 ,  H01S5/343 ,  H01L29/225 ,  H01L33/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/106 ,  H01S5/3425 ,  H01S5/34333

摘要： An optoelectronic device such as an LED or laser which produces spontaneous emission by recombination of carriers (electrons and holes) trapped in Quantum Confinement Regions formed by transverse thickness variations in Quantum Well layers of group III nitrides.

摘要翻译： 一种光电器件，例如LED或激光器，其通过在由III族氮化物的量子阱层中的横向厚度变化形成的量子限制区域中的载流子（电子和空穴）的复合产生自发发射。

公开(公告)号：US5473177A

公开(公告)日：1995-12-05

申请号：US180479

申请日：1994-01-12

申请人： Shigeru Nakajima

发明人： Shigeru Nakajima

IPC分类号： H01L29/20 ,  H01L21/338 ,  H01L29/778 ,  H01L29/812 ,  H01L29/161 ,  H01L29/205 ,  H01L29/225

CPC分类号： H01L29/7783

摘要： There is disclosed a field effect transistor having a channel layer, an electron supply layer, and a spacer layer formed between the channel layer and the electron supply layer. The spacer layer has a thickness for spatially separating a two-dimensional electron gas from donor ions in the electron supply layer, and for forming the two-dimensional electron gas in the channel layer by the Coulomb force of the donor ions. The spacer layer material has better high frequency characteristics than that of the electron supply layer.

摘要翻译： 公开了一种场效应晶体管，其具有沟道层，电子供应层和形成在沟道层和电子供应层之间的间隔层。 间隔层具有用于在电子供给层中空间分离二维电子气体与供体离子的厚度，并且通过供体离子的库仑力在沟道层中形成二维电子气。 间隔层材料具有比电子供给层更好的高频特性。

公开(公告)号：US5448087A

公开(公告)日：1995-09-05

申请号：US876199

申请日：1992-04-30

申请人： Swight C. Streit ,  Aaron K. Oki

发明人： Swight C. Streit ,  Aaron K. Oki

IPC分类号： H01L29/10 ,  H01L29/737 ,  H01L29/161 ,  H01L29/205 ,  H01L29/225

CPC分类号： H01L29/7371 ,  H01L29/1004

摘要： A heterojunction bipolar transistor with an exponentially graded base doping is disclosed, in addition to a technique for fabricating the transistor. In accordance with the preferred embodiment, the transistor employs a base with an exponentially graded Beryllium doping which varies from 5.times.10.sup.19 cm.sup.-3 at the base-emitter junction to 5.times.10.sup.18 cm.sup.-3 at the base-collector junction. The built-in field due to the exponentially graded doping profile significantly reduces base transit time despite bandgap narrowing associated with high base doping. Compared to devices with the same base thickness and uniform base doping, the cut off frequency is increased and the maximum frequency of oscillation is also increased. Also, consistently higher common emitter current gain results even though the Gummel number is twice as high and the base resistance is reduced by 40%.

摘要翻译： 除了制造晶体管的技术之外，还公开了具有指数梯度的基极掺杂的异质结双极晶体管。 根据优选实施例，晶体管采用具有指数级渐变的铍掺杂的基极，其在基极 - 集电极结处的基极 - 发射极结处从5×10 19 cm -3变化到5×10 18 cm -3。 由于具有指数梯度的掺杂特性，内置场可显着降低基极通过时间，尽管与高基极掺杂相关的带隙变窄。 与具有相同基底厚度和均匀基极掺杂的器件相比，截止频率增加，振荡的最大频率也增加。 此外，尽管Gummel数量是两倍高，基极电阻降低了40％，但始终更高的公共发射极电流增益。

公开(公告)号：US5371389A

公开(公告)日：1994-12-06

申请号：US101685

申请日：1993-08-04

申请人： Toshinobu Matsuno ,  Atsushi Nakagawa ,  Takashi Hirose ,  Kaoru Inoue

发明人： Toshinobu Matsuno ,  Atsushi Nakagawa ,  Takashi Hirose ,  Kaoru Inoue

IPC分类号： H01L29/205 ,  H01L21/331 ,  H01L29/10 ,  H01L29/73 ,  H01L29/737 ,  H01L29/161 ,  H01L29/225

CPC分类号： H01L29/7371 ,  H01L29/1004 ,  Y10S148/072 ,  Y10S438/936

摘要： A base layer interposed between an n-type GaAs collector layer and an n-type AlGaAs emitter layer is composed of a p-type InAlGaAs. From a collector/base interface to an emitter/base interface, an InAs composition of the base layer is decreased and a concentration of carbon as a p-type impurity thereof is increased so as to obtain a built-in internal field intensity in the base layer by a cooperative effect of the graded-bandgap and the impurity concentration gradient, thus reducing a base transit time of electrons. The base layer is fabricated according to MOMBE using TMG as a gallium source, controlling the InAs composition, so that a desired carbon concentration gradient is automatically formed. Thereby, a high performance heterojunction bipolar transistor with an increased built-in internal field intensity in the base layer is obtained.

摘要翻译： 介于n型GaAs集电极层和n型AlGaAs发射极层之间的基极层由p型InAlGaAs构成。 从集电极/基极界面到发射极/基极界面，降低了基极层的InAs组分，并且增加了作为p型杂质的碳浓度，以便在基底中获得内置的内部场强 通过渐变带隙和杂质浓度梯度的协同效应，从而减少电子的基极传播时间。 使用TMG作为镓源，根据MOMBE制造基层，控制InAs组成，从而自动形成所需的碳浓度梯度。 从而获得了在基极层中具有增加的内部内部场强的高性能异质结双极晶体管。

公开(公告)号：US5362977A

公开(公告)日：1994-11-08

申请号：US997415

申请日：1992-12-28

申请人： Neil E. J. Hunt ,  Erdmann F. Schubert

发明人： Neil E. J. Hunt ,  Erdmann F. Schubert

IPC分类号： H01L33/06 ,  H01L29/161 ,  H01L29/205 ,  H01L29/225 ,  H01L33/00

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/465

摘要： This invention embodies single mirror light-emitting diodes (LEDs) with enhanced intensity. The LEDs are Group III-V and/or II-IV compound semiconductor structures with a single metallic mirror. The enhanced intensity is obtained by placing an active region of the LED having from two to ten, preferably from four to eight, quantum wells at an anti-node of the optical node of the device created by a nearby metallic mirror. Such multiquantum well LED structures exhibit enhanced efficiencies approaching that of a perfect isotropic emitter.

摘要翻译： 本发明体现了具有增强强度的单镜面发光二极管（LED）。 LED是具有单个金属镜的III-V族和/或II-IV族化合物半导体结构。 通过在由附近的金属镜产生的装置的光学节点的反节点处放置具有二至十个，优选四至八个量子阱的LED的有源区域来获得增强的强度。 这种多量子阱LED结构表现出提高的效率接近完美的各向同性发射器的效率。

公开(公告)号：US5362973A

公开(公告)日：1994-11-08

申请号：US542857

申请日：1990-06-25

申请人： Thomas L. Paoli ,  John E. Epler

发明人： Thomas L. Paoli ,  John E. Epler

IPC分类号： H01L21/20 ,  H01L21/205 ,  H01L21/268 ,  H01L29/06 ,  H01L29/201 ,  H01L29/80 ,  H01S5/00 ,  H01S5/34 ,  H01L29/225

CPC分类号： B82Y20/00 ,  H01L21/02395 ,  H01L21/0243 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02546 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/268 ,  H01S5/341 ,  Y10S438/962

摘要： In situ removal of selected or patterned portions of quantum well layers is accomplished by photo induced evaporation enhancement to form quantum wire, patterned quantum wire and multiple quantum wires in a semiconductor structure.

摘要翻译： 通过光诱导的蒸发增强来实现量子阱层的选定或图案化部分的原位去除，以形成半导体结构中的量子线，图案化量子线和多个量子线。

公开(公告)号：US5357121A

公开(公告)日：1994-10-18

申请号：US944981

申请日：1992-09-15

申请人： Miyo Miyashita ,  Takayuki Katoh ,  Teruyuki Shimura ,  Kazuhiko Nakahara

发明人： Miyo Miyashita ,  Takayuki Katoh ,  Teruyuki Shimura ,  Kazuhiko Nakahara

IPC分类号： G02B6/13 ,  H01L27/06 ,  H01L27/14 ,  H01L27/144 ,  H01L31/10 ,  H01L29/161 ,  H01L29/205 ,  H01L29/225 ,  H01L33/00

CPC分类号： H01L27/1443 ,  H01L27/0694

摘要： An optoelectronic integrated circuit includes a light responsive element for converting an optical signal into an electrical signal and an electronic circuit for processing the electrical signal. The light responsive element is disposed on a first surface of a substrate and includes p side electrodes and n side electrodes alternatingly arranged parallel to each other. The electronic circuit is disposed on a second surface of the substrate. The light responsive element is electrically connected to the electronic circuit by a via hole penetrating the substrate. In this structure, light incident on the first surface is almost completely absorbed by the substrate and hardly reaches the electronic circuit on the second surface. Therefore, variations in operation of the electronic circuit, such as an increase in drain current, are reduced. In addition, since the degree of freedom in arranging these elements on both surfaces of the substrate is increased, high-density integration is achieved, resulting in a small-sized IC chip.

摘要翻译： 光电集成电路包括用于将光信号转换成电信号的光响应元件和用于处理电信号的电子电路。 光响应元件设置在基板的第一表面上，并且包括彼此平行地交替布置的p侧电极和n侧电极。 电子电路设置在基板的第二表面上。 光响应元件通过穿透基板的通孔电连接到电子电路。 在该结构中，入射到第一表面的光几乎完全被基板吸收，并且几乎不到达第二表面上的电子电路。 因此，减小了电子电路的工作变化，例如漏极电流的增加。 此外，由于在衬底的两个表面上布置这些元件的自由度增加，所以实现了高密度的集成，导致了小尺寸的IC芯片。

公开(公告)号：US5323032A

公开(公告)日：1994-06-21

申请号：US941723

申请日：1992-09-08

申请人： Fumihiko Sato ,  Tsutomu Tashiro

发明人： Fumihiko Sato ,  Tsutomu Tashiro

IPC分类号： H01L29/165 ,  H01L21/331 ,  H01L29/73 ,  H01L29/732 ,  H01L29/737 ,  H01L29/161 ,  H01L29/205 ,  H01L29/225

CPC分类号： H01L29/66242 ,  H01L29/7378

摘要： A Si-SiGe-Si heterojunction bipolar transistor which has a very thin epitaxial base layer. The device possesses an optimum doping profile across a base layer. The emitter region is higher doping concentration of n.sup.+ -type. The base layer of p-type comprises both a monocrystalline SiGe layer having a lightly doped region on a collector side and a heavily doped region, and a lightly doped monocrystalline Si layer on an emitter side. An emitter side Si-SiGe heterojunction exists in the base layer and a collector side Si-SiGe heterojunction exists in the collector region. Those provides a slope negative gradient of a potential profile from the emitter to collector without a potential barrier for carriers, or electrons or holes. The very thin base layer is connected to an aluminium contact through an external base layer and a base contact layer thereby permitting the very thin base layer to be free from a damage by contacting with a metal such as aluminium. In replacement of this, the base layer may be formed thereunder with a base contact layer to cover the damage of the base layer.

摘要翻译： 具有非常薄的外延基底层的Si-SiGe-Si异质结双极晶体管。 该器件具有穿过基极层的最佳掺杂分布。 发射极区n +型掺杂浓度较高。 p型的基底层包括在集电极侧具有轻掺杂区域和重掺杂区域的单晶SiGe层和发射极侧上的轻掺杂单晶Si层。 在基极层中存在发射极侧Si-SiGe异质结，在集电极区域存在集电极侧Si-SiGe异质结。 那些提供从发射极到集电极的电位分布的斜率负梯度，而对于载流子或电子或空穴没有势垒。 非常薄的基底层通过外部基底层和基底接触层连接到铝接触，从而允许非常薄的基底层与例如铝的金属接触而损坏。 作为替代，可以在基底层上形成基底层以覆盖基底层的损伤。