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    Light emitting element and method of fabrication thereof
    51.
    发明授权
    Light emitting element and method of fabrication thereof 有权
    发光元件及其制造方法

    公开(公告)号：US06611003B1

    公开(公告)日：2003-08-26

    申请号：US09468949

    申请日：1999-12-22

    申请人： Genichi Hatakoshi ,  Hidetoshi Fujimoto ,  Mamoru Terauchi

    发明人： Genichi Hatakoshi ,  Hidetoshi Fujimoto ,  Mamoru Terauchi

    IPC分类号： H01L3300

    CPC分类号： H01L33/20 ,  B82Y20/00 ,  H01L33/10 ,  H01L33/46 ,  H01L2224/4847 ,  H01L2224/49107 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/0286 ,  H01S5/18308 ,  H01S5/18394 ,  H01S5/34333 ,  H01S2301/16

    摘要： This invention provides a light-emitting element that comprises a light-emitting portion made of a nitride semiconductor; and a first wavefront converter for converting the radiated shape of light that is emitted from the light-emitting portion into a radiated shape that is smaller than the wavelength thereof, and emitting the same as output light. In this case, the first wavefront converter has a small aperture of a diameter that is smaller than the wavelength of light that is emitted from the light-emitting portion. If the output light is made to comprise an evanescent wave that is emitted to the exterior through this small aperture, it is possible to obtain an extremely small light spot. This invention also relates to a surface-emitting type of light-emitting element comprising a multi-layered structure comprising a light-emitting layer; and a pair of electrodes for supplying a current to the light-emitting layer; wherein output light is emitted from a light-emitting surface on top of the multi-layered structure; and the pair of electrodes are recessed from the light-emitting surface to the light-emitting layer side. This makes it possible to bring the light-emitting surface extremely close to an object to be illuminated. The small aperture can be opened up in a self-aligning manner by using the light from the light-emitting portion. As a result, it is possible to provide a light-emitting element and a method of fabrication thereof that create beam characteristics that are suitable for use with an optical disc or the like.

    摘要翻译： 本发明提供一种发光元件，其包括由氮化物半导体构成的发光部分; 以及第一波前转换器，用于将从发光部分发射的光的辐射形状转换成小于其波长的辐射形状，并将其发射为输出光。 在这种情况下，第一波前转换器具有比从发光部发射的光的波长小的直径的小孔径。 如果使输出光包括通过该小孔向外部发射的ev逝波，则可以获得极小的光点。 本发明还涉及包括发光层的多层结构的表面发射型发光元件; 以及一对用于向发光层供给电流的电极; 其中输出光从所述多层结构的顶部上的发光表面发射; 并且一对电极从发光面凹入发光层侧。 由此，能够使发光面与被照射体接近。 通过使用来自发光部的光，能够以自对准的方式打开小光圈。 结果，可以提供一种产生适合于与光盘等一起使用的光束特性的发光元件及其制造方法。

    Semiconductor device
    55.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US5889295A

    公开(公告)日：1999-03-30

    申请号：US806638

    申请日：1997-02-26

    申请人： John Rennie ,  Genichi Hatakoshi

    发明人： John Rennie ,  Genichi Hatakoshi

    IPC分类号： H01L33/28 ,  H01L33/32 ,  H01L33/40 ,  H01S5/323 ,  H01L33/00

    CPC分类号： H01L33/40 ,  H01L33/28 ,  H01L33/32 ,  H01S5/32341

    摘要： Disclosed is a long-life GaN-based semiconductor device which is achieved by reducing the operating voltage of the semiconductor device comprising a GaN-based or a ZnSe-based compound semiconductor formed on a sapphire substrate and by preventing the electromigration of metal atoms from an electrode into compound semiconductor layers. The operating voltage of the GaN-based or ZnSe-based semiconductor device formed on a sapphire substrate or a SiC substrate can be greatly reduced by employing a ZnO layer doped with a significant amount of Al as a material for forming ohmic contact to p- or n- compound semiconductor layers. The long-life GaN-based semiconductor device can be attained by preventing electromigration of atoms from a metallic electrode by use of ZnO layer. If a superlattice including the ZnO layer is employed as an optical guide layer or if the superlattice including the ZnO layer as an active layer, a long-life laser diode with a low operating voltage and a wide wavelength range can be obtained.

    摘要翻译： 公开了一种长寿命的GaN基半导体器件，其通过降低包含在蓝宝石衬底上形成的GaN基或ZnSe基化合物半导体的半导体器件的工作电压并通过防止金属原子从 电极进入化合物半导体层。 通过使用掺杂有大量Al的ZnO层作为与p-或...形成欧姆接触的材料，可以大大降低形成在蓝宝石衬底或SiC衬底上的GaN基或ZnSe基半导体器件的工作电压 n-化合物半导体层。 可以通过使用ZnO层来防止原子从金属电极的电迁移来实现长寿命的GaN基半导体器件。 如果使用包括ZnO层的超晶格作为光导层，或者如果包括ZnO层作为有源层的超晶格，则可以获得具有低工作电压和宽波长范围的长寿命激光二极管。

    Multilayer structured semiconductor devices
    56.
    发明授权
    Multilayer structured semiconductor devices 失效
    多层结构半导体器件

    公开(公告)号：US5786603A

    公开(公告)日：1998-07-28

    申请号：US711884

    申请日：1996-09-12

    申请人： John Rennie ,  Genichi Hatakoshi ,  Shinji Saito

    发明人： John Rennie ,  Genichi Hatakoshi ,  Shinji Saito

    IPC分类号： H01L29/205 ,  H01L27/12 ,  H01L33/06 ,  H01L33/28 ,  H01L33/32 ,  H01L33/34 ,  H01L33/40 ,  H01S5/00 ,  H01S5/02 ,  H01S5/042 ,  H01S5/323 ,  H01S5/327 ,  H01S5/343 ,  H01S5/347 ,  H01L129/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072

    CPC分类号： H01L33/28 ,  B82Y20/00 ,  H01L33/007 ,  H01L33/0087 ,  H01L33/32 ,  H01S5/0421 ,  H01S5/32341 ,  H01S5/327 ,  H01S5/347 ,  H01S2301/173 ,  H01S5/021 ,  H01S5/0213 ,  H01S5/0218 ,  H01S5/34333

    摘要： At an n--n hetero-interface in a ZnSe-based or GaN-based multilayered semiconductor laser and light-emitting diode, an excessive voltage drop causing the operating voltage to increased is reduced, thereby lengthening the service life of the device. A single or plurality of n-type intermediate layers are provided in the n--n hetero-interface region where the excessive voltage drop develops. The excessive voltage drop developing at the n--n hetero-interface is decreased by setting the energy value at the edge of the conduction band of each intermediate layer to a mid-value between the energy values at the edges of the conduction bands of the n-type compound semiconductors adjoining both sides of the intermediate layer. The configuration of a GaN-based MQW laser including the intermediate layer formed on sapphire substrate is shown. The relationship between the lattice constant of an intermediate layer necessary for obtaining an intermediate layer excellent in crystallinity suitable for the above object and the lattice constants of compound semiconductors adjoining both sides of the intermediate layer is described.

    摘要翻译： 在基于ZnSe或GaN基多层半导体激光器和发光二极管的n-n异质界面处，导致工作电压升高的过大的电压降降低，从而延长了器件的使用寿命。 在形成过大的电压降的n-n异质界面区域中设置单个或多个n型中间层。 通过将n型异质界面的导带边缘处的能量值设定在n型导带边缘的能量值之间的中间值，可以减小在nn异质界面处产生的过大的电压降 邻接中间层两侧的复合半导体。 示出了包括在蓝宝石衬底上形成的中间层的GaN基MQW激光器的构造。 描述了获得适合于上述目的的结晶度优异的中间层所需的中间层的晶格常数与邻接中间层两侧的化合物半导体的晶格常数之间的关系。

    Semiconductor laser device
    58.
    发明授权
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号：US5406574A

    公开(公告)日：1995-04-11

    申请号：US165909

    申请日：1993-12-14

    申请人： John Rennie ,  Masaki Okajima ,  Genichi Hatakoshi

    发明人： John Rennie ,  Masaki Okajima ,  Genichi Hatakoshi

    IPC分类号： H01S5/20 ,  H01S5/223 ,  H01S5/347 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/20 ,  H01S5/2013 ,  H01S5/2231 ,  H01S5/347

    摘要： A semiconductor laser device includes a substrate, a first cladding layer formed on the substrate, an active layer formed on the first cladding layer, and a second cladding layer formed on the active layer having a conductivity type different from that of the first cladding layer, wherein at least one of the first and second cladding layers has a multiquantum barrier structure. The width of the first quantum barrier of the multiquantum barrier structure relative to the side of the active layer is 24 to 100 nm, the width of the second quantum barrier of the multiquantum barrier structure relative to the side of the active layer is 5 to 20 nm, and the multiquantum barrier structure is constituted by alternately stacking first thin layers consisting of In.sub.z (Ga.sub.1-x Al.sub.x).sub.1-z P (x is 0.7 to 1.0 and z is 0 to 1.0) and second thin layers consisting of In.sub.z (Ga.sub.1-y Al.sub.y).sub.1-z P (y is 0 to 0.3 and z is 0 to 1.0).

    摘要翻译： 半导体激光装置包括基板，形成在基板上的第一包覆层，形成在第一包层上的有源层和形成在有源层上的与第一包层不同的导电类型的第二包层， 其中所述第一和第二包覆层中的至少一个具有多量壁垒结构。 多量子势垒结构相对于有源层侧面的第一量子势垒的宽度为24〜100nm，多量子势垒结构的第二量子势垒相对于有源层侧的宽度为5〜20 nm，并且多量阻挡结构通过交替堆叠由Inz（Ga1-xAlx）1-zP（x为0.7〜1.0，z为0〜1.0）构成的第一薄层和由Inz（Ga1-yAly）构成的第二薄层 ）1-zP（y为0〜0.3，z为0〜1.0）。

    Semiconductor light-emitting device
    59.
    发明授权
    Semiconductor light-emitting device 失效
    半导体发光装置

    公开(公告)号：US5389800A

    公开(公告)日：1995-02-14

    申请号：US128113

    申请日：1993-09-29

    申请人： Kazuhiko Itaya ,  Genichi Hatakoshi

    发明人： Kazuhiko Itaya ,  Genichi Hatakoshi

    IPC分类号： H01L33/14 ,  H01L33/28 ,  H01L33/30 ,  H01S5/00 ,  H01S5/327 ,  H01L29/161 ,  H01L29/205 ,  H01L33/00

    CPC分类号： H01L33/40 ,  H01S5/327 ,  H01L33/145

    摘要： According to the present invention, there is provided a semiconductor light-emitting device including a light-emitting layer having a first semiconductor layer, and formed on a main surface of one side of a semiconductor substrate, an upper-most layer of the light-emitting layer made of a compound semiconductor containing elements from the group II and group VI of the periodic table, the second semiconductor layer formed on the first semiconductor layer, and made of a material having a lattice constant different from that of the material of the semiconductor substrate by at least 2%, the second semiconductor layer having a film thickness of a critical film thickness, the first electrode formed on a main surface of the other side of the semiconductor substrate, and the second electrode formed on the second semiconductor layer.

    摘要翻译： 根据本发明，提供了一种半导体发光器件，其包括具有第一半导体层的发光层，并且形成在半导体衬底的一侧的主表面上， 由包含元素周期表的第II族和第VI族的元素的化合物半导体制成的发光层，形成在第一半导体层上的第二半导体层，并且由与半导体材料的晶格常数不同的晶格常数 衬底至少2％，第二半导体层具有临界膜厚度的膜厚度，形成在半导体衬底的另一侧的主表面上的第一电极和形成在第二半导体层上的第二电极。