公开(公告)号：US20140273309A1

公开(公告)日：2014-09-18

申请号：US14051287

申请日：2013-10-10

Applicant: Intermolecular, Inc.

Inventor： Sandip Niyogi ,  Sean Barstow ,  Jay Dedontney ,  Chi-I Lang ,  Ratsamee Limdulpaiboon ,  Martin Romero ,  Sunil Shanker ,  James Tsung ,  J. Watanabe

IPC: H01L21/66 ,  H01L21/02

CPC classification number: H01L21/30 ,  B01J19/0046 ,  B01J2219/00283 ,  B01J2219/00286 ,  B01J2219/00301 ,  B01J2219/00313 ,  B01J2219/0038 ,  B01J2219/00382 ,  B01J2219/00416 ,  B01J2219/00418 ,  B01J2219/00527 ,  B01J2219/00585 ,  B08B3/04 ,  C23C14/08 ,  C23C14/22 ,  C23C14/34 ,  C23C18/1619 ,  C23C18/1682 ,  C25D17/02 ,  G11C13/0004 ,  H01L21/02104 ,  H01L21/30604 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6719 ,  H01L22/10 ,  H01L22/12 ,  H01L22/14 ,  H01L27/2463 ,  H01L45/1608

Abstract: Remote-plasma treatments of surfaces, for example in semiconductor manufacture, can be improved by preferentially exposing the surface to only a selected subset of the plasma species generated by the plasma source. The probability that a selected species reaches the surface, or that an unselected species is quenched or otherwise converted or diverted before reaching the surface, can be manipulated by introducing additional gases with selected properties either at the plasma source or in the process chamber, varying chamber pressure or flow rate to increase or decrease collisions, or changing the dimensions or geometry of the injection ports, conduits and other passages traversed by the species. Some example processes treat surfaces preferentially with relatively low-energy radicals, vary the concentration of radicals at the surface in real time, or clean and passivate in the same unit process.

Abstract translation: 可以通过优选地将表面暴露于由等离子体源产生的等离子体物质的选定子集中来改善表面的远程等离子体处理，例如在半导体制造中。 所选择的物种到达表面的可能性，或未被选择的物质在到达表面之前被淬灭或以其他方式转化或转移的可能性可以通过在等离子体源或处理室，变化室中引入具有选定性质的附加气体来操纵 压力或流量以增加或减少碰撞，或改变注射口，管道和由物种穿过的其它通道的尺寸或几何形状。 一些示例性过程优先用相对低能量的基团处理表面，实时地改变表面处的自由基的浓度，或者在相同的单元过程中清洁和钝化。

公开(公告)号：US20140264281A1

公开(公告)日：2014-09-18

申请号：US14137183

申请日：2013-12-20

Applicant: Intermolecular, Inc.

Inventor： Sandip Niyogi ,  Sean Barstow ,  Chi-I Lang ,  Ratsamee Limdulpaiboon ,  Dipankar Pramanik ,  J. Watanabe

IPC: H01L29/10 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L21/76864 ,  H01L21/02005 ,  H01L21/02104 ,  H01L21/02172 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02205 ,  H01L21/0228 ,  H01L21/283 ,  H01L21/28575 ,  H01L21/3065 ,  H01L22/12 ,  H01L22/14 ,  H01L27/1462 ,  H01L27/14643 ,  H01L27/14698 ,  H01L29/1606 ,  H01L29/41 ,  H01L29/66477 ,  H01L29/66742 ,  H01L29/778 ,  H01L29/786

Abstract: Semiconductor devices and methods of making thereof are disclosed. A field effect transistor (FET) is provided comprising a substrate, a first layer disposed above the substrate, the first layer being operable as a gate electrode, a second layer disposed above the first layer, the second layer comprising a dielectric material, a third layer disposed above the second layer, the third layer comprising a semiconductor, and a fourth layer comprising one or more conductive materials and operable as source and drain electrodes disposed above the third layer. In some embodiments, the dielectric material comprises a high-κ dielectric. In some embodiments, the source and drain electrodes comprise one or more metals. The source and drain electrodes are each in ohmic contact with an area of the top surface of the third layer, and substantially all of the current through the transistor flows through the ohmic contacts.

Abstract translation: 公开了半导体器件及其制造方法。 提供场效应晶体管（FET），其包括基板，设置在基板上方的第一层，第一层可操作为栅电极，第二层设置在第一层上方，第二层包括电介质材料，第三层 层，其设置在所述第二层上方，所述第三层包括半导体，以及包括一个或多个导电材料并可操作为设置在所述第三层上方的源极和漏极的第四层。 在一些实施例中，电介质材料包括高压 电介质。 在一些实施例中，源电极和漏电极包括一种或多种金属。 源电极和漏电极各自与第三层的顶表面的区域欧姆接触，并且基本上所有通过晶体管的电流都流经欧姆接触。

公开(公告)号：US20140252565A1

公开(公告)日：2014-09-11

申请号：US14198480

申请日：2014-03-05

Applicant: Intermolecular, Inc.

Inventor： Frank Greer ,  Edwin Adhiprakasha ,  Chi-I Lang ,  Ratsamee Limdulpaiboon ,  Sandip Niyogi ,  Kurt Pang ,  J. Watanabe

IPC: H01L21/311 ,  H01L29/02

CPC classification number: H01L21/31122 ,  H01L21/02052 ,  H01L21/02236 ,  H01L21/02255 ,  H01L21/02301 ,  H01L21/02304 ,  H01L21/02312 ,  H01L21/02315 ,  H01L21/28255 ,  H01L29/02

Abstract: A germanium-containing semiconductor surface is prepared for formation of a dielectric overlayer (e.g., a thin layer of high-k gate dielectric) by (1) removal of native oxide, for example by wet cleaning, (2) additional cleaning with hydrogen species, (3) in-situ formation of a controlled monolayer of GeO2, and (4) in-situ deposition of the dielectric overlayer to prevent uncontrolled regrowth of native oxide. The monolayer of GeO2 promotes uniform nucleation of the dielectric overlayer, but it too thin to appreciably impact the effective oxide thickness of the dielectric overlayer.

Abstract translation: 制备含锗的半导体表面，用于通过（1）去除天然氧化物，例如通过湿法清洁来形成电介质覆盖层（例如，高k栅极电介质的薄层），（2）用氢物质进行额外的清洁 ，（3）原位形成受控单层的GeO 2，以及（4）电介质覆层的原位沉积，以防止天然氧化物的不受控制的再生长。 GeO2的单层促进电介质覆盖层的均匀成核，但它太薄而不能明显影响电介质覆盖层的有效氧化物厚度。

公开(公告)号：US20140174918A1

公开(公告)日：2014-06-26

申请号：US13721419

申请日：2012-12-20

Applicant: INTERMOLECULAR, INC.

Inventor： Hong Sheng Yang ,  Kent Riley Child ,  Chi-I Lang ,  Jingang Su ,  Danny Wang

IPC: C23C14/35

CPC classification number: C23C14/352 ,  C23C14/50 ,  C23C14/548 ,  H01J37/3405 ,  H01J37/3435 ,  H01J37/3447 ,  H01J37/3452 ,  H01J37/3455 ,  H01J37/3497

Abstract: A sputter gun is provided. The sputter gun includes a target and a first plate coupled to a surface of the target. A first magnet is disposed over a second magnet. A second plate coupled to a surface of the first magnet and a gap is defined between a surface of the second magnet and a surface of the first plate. A fluid inlet and a fluid outlet are disposed above a surface of the first magnet. A restriction bar is coupled to the second plate, wherein the restriction bar is configured to prevent a flow path of fluid through the first inlet to the second inlet unless the fluid traverses the gap defined between a surface of the second magnet and a surface of the first plate. Alternative configurations of the sputter gun are included.

Abstract translation: 提供溅射枪。 溅射枪包括目标和耦合到靶的表面的第一板。 第一磁体设置在第二磁体上。 耦合到第一磁体的表面的第二板和间隙限定在第二磁体的表面和第一板的表面之间。 流体入口和流体出口设置在第一磁体的表面上方。 限制杆联接到第二板，其中限制杆被配置为防止流体通过第二入口的第一入口的流动路径，除非流体穿过限定在第二磁体的表面与第二磁体的表面之间的间隙 第一盘。 包括溅射枪的替代配置。

公开(公告)号：US20140174914A1

公开(公告)日：2014-06-26

申请号：US13938781

申请日：2013-07-10

Applicant: Intermolecular, Inc.

Inventor： Chi-I Lang

IPC: C23C14/35

CPC classification number: C23C14/3414

Abstract: Embodiments provided herein describe methods and systems for depositing material onto a surface. A target including a material in a porous state is provided. The density of the material in the porous state is less than 93% of the absolute density of the material. The target is positioned over a surface. At least some of the material is caused to be ejected from the target and deposited onto the surface. Films deposited from the porous targets exhibit significantly fewer particle defects than films of the same material deposited from the conventionally preferred higher-density targets. Brittle materials, such as alloys of refractory metals and silicon, seem to particularly benefit. The larger, less-uniform layered grains of the porous targets seem less prone to 10-micron-scale delamination than the smaller, more uniform grains of denser targets.

Abstract translation: 本文提供的实施例描述了将材料沉积到表面上的方法和系统。 提供了包括多孔状态的材料的靶。 多孔态的材料密度小于材料绝对密度的93％。 目标位于表面上方。 使至少一些材料从靶上喷出并沉积在表面上。 从多孔靶沉积的膜比常规优选的较高密度靶沉积的相同材料的膜显示出显着更少的颗粒缺陷。 脆性材料，如难熔金属和硅的合金似乎特别有益。 多孔靶的较大的，较不均匀的层状颗粒似乎比较致密的靶的较小的，更均匀的颗粒更不容易发生10微米级的分层。

公开(公告)号：US20140106561A1

公开(公告)日：2014-04-17

申请号：US14134219

申请日：2013-12-19

Applicant: Intermolecular, Inc.

Inventor： Sandip Niyogi ,  Chi-I Lang

IPC: H01L21/768

CPC classification number: H01L21/76846 ,  C23C14/042 ,  C23C14/0605 ,  C23C14/185 ,  C23C14/5806 ,  H01L21/02422 ,  H01L21/0243 ,  H01L21/02527 ,  H01L21/02672 ,  H01L21/32051 ,  H01L21/76823 ,  H01L21/76855 ,  H01L21/76867 ,  H01L21/76871 ,  H01L23/53238 ,  H01L23/53276 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments described herein provide interconnect barrier layers and methods for forming such barriers. A dielectric body having a trench formed in a surface thereof is provided. A first layer is formed above the dielectric body within the trench. The first layer includes amorphous carbon. A second layer is formed above the first layer. The second layer includes a metal. The dielectric body, the first layer, and the second layer are heated to convert at least some of the amorphous carbon to graphene.

Abstract translation: 本文所述的实施例提供了用于形成这种屏障的互连阻挡层和方法 提供具有形成在其表面中的沟槽的电介质体。 第一层形成在沟槽内的绝缘体的上方。 第一层包括无定形碳。 在第一层上方形成第二层。 第二层包括金属。 电介质体，第一层和第二层被加热以将至少一些无定形碳转化为石墨烯。

公开(公告)号：US20140071435A1

公开(公告)日：2014-03-13

申请号：US14077545

申请日：2013-11-12

Applicant: Intermolecular, Inc.

Inventor： Yun Wang ,  Tony P. Chiang ,  Chi-I Lang

IPC: G01R31/26 ,  G01N21/55

CPC classification number: G01R31/26 ,  G01N21/55 ,  G01R31/2607 ,  H02S50/10

Abstract: Simultaneous measurement of an internal quantum efficiency and an external quantum efficiency of a solar cell using an emitter that emits light; a three-way beam splitter that splits the light into solar cell light and reference light, wherein the solar cell light strikes the solar cell; a reference detector that detects the reference light; a reflectance detector that detects reflectance light, wherein the reflectance light comprises a portion of the solar cell light reflected off the solar cell; a source meter operatively coupled to the solar cell; a multiplexer operatively coupled to the solar cell, the reference detector, and the reflectance detector; and a computing device that simultaneously computes the internal quantum efficiency and the external quantum efficiency of the solar cell.

Abstract translation: 使用发射光的同时测量太阳能电池的内部量子效率和外部量子效率; 三光束分离器，其将光分解成太阳能电池光和参考光，其中太阳能电池光照射到太阳能电池; 检测参考光的参考检测器; 反射光检测器，其检测反射光，其中所述反射光包括从太阳能电池反射的太阳能电池光的一部分; 可操作地耦合到太阳能电池的源计量器; 可操作地耦合到太阳能电池，参考检测器和反射检测器的多路复用器; 以及同时计算太阳能电池的内部量子效率和外部量子效率的计算装置。

公开(公告)号：US08552755B2

公开(公告)日：2013-10-08

申请号：US13849749

申请日：2013-03-25

Applicant: Intermolecular, Inc.

Inventor： Yun Wang ,  Tony P. Chiang ,  Chi-I Lang

IPC: G01R31/26

CPC classification number: G01R31/26 ,  G01N21/55 ,  G01R31/2607 ,  H02S50/10

Abstract: Measuring current-voltage (I-V) characteristics of a solar cell using a lamp that emits light, a substrate that includes a plurality of solar cells, a positive electrode attached to the solar cells, and a negative electrode peripherally deposited around each of the solar cells and connected to a common ground, an articulation platform coupled to the substrate, a multi-probe switching matrix or a Z-stage device, a programmable switch box coupled to the multi-probe switching matrix or Z-stage device and selectively articulating the probes by raising the probes until in contact with at least one of the positive electrode and the negative electrode and lowering the probes until contact is lost with at least one of the positive electrode and the negative electrode, a source meter coupled to the programmable switch box and measuring the I-V characteristics of the substrate.

公开(公告)号：US20130122614A1

公开(公告)日：2013-05-16

申请号：US13713421

申请日：2012-12-13

Applicant: Intermolecular, Inc.

Inventor： Charlene Chen ,  Tony P. Chiang ,  Chi-I Lang ,  Yun Wang

IPC: H01L21/66 ,  G01N21/59

CPC classification number: H01L22/20 ,  G01N21/59 ,  H01L21/02491 ,  H01L21/02527 ,  H01L21/0262 ,  H01L22/12 ,  H01L29/1606

Abstract: A method and system includes a first substrate and a second substrate, each substrate comprising a predetermined baseline transmittance value at a predetermine wavelength of light, processing regions on the first substrate by combinatorially varying at least one of materials, process conditions, unit processes, and process sequences associated with the graphene production, performing a first characterization test on the processed regions on the first substrate to generate first results, processing regions on a second substrate in a combinatorial manner by varying at least one of materials, process conditions, unit processes, and process sequences associated with the graphene production based on the first results of the first characterization test, performing a second characterization test on the processed regions on the second substrate to generate second results, and determining whether at least one of the first substrate and the second substrate meet a predetermined quality threshold based on the second results.

Abstract translation: 一种方法和系统包括第一衬底和第二衬底，每个衬底在光的预定波长处包括预定的基线透射率值，第一衬底上的处理区域通过组合地改变材料，工艺条件，单元工艺中的至少一个和 与所述石墨烯生产相关联的工艺序列，对所述第一衬底上的所述经处理区域执行第一表征测试以产生第一结果，通过改变材料，工艺条件，单位过程中的至少一种以组合方式处理第二衬底上的区域， 以及基于第一表征测试的第一结果与石墨烯生产相关联的处理顺序，对第二衬底上的经处理区域执行第二表征测试以产生第二结果，以及确定第一衬底和第二衬底中的至少一个 基板满足预定的质量阈值 基于第二个结果。