Method for producing optoelectronic semiconductor devices and an optoelectronic semiconductor device

    公开(公告)号:US10103296B2

    公开(公告)日:2018-10-16

    申请号:US15515766

    申请日:2015-10-01

    Abstract: A method for producing optoelectronic semiconductor devices and an optoelectronic semiconductor device are disclosed. In an embodiment, the method includes providing a plurality of semiconductor chips for producing electromagnetic radiation, arranging the plurality of semiconductor chips in a plane, forming a housing body composite, at least some regions of which are arranged between the semiconductor chips, forming a plurality of conversion elements, wherein each conversion element comprises a wavelength-converting conversion material and is arranged on one of the semiconductor chips, encapsulating the plurality of conversion elements at least on their lateral edges by an encapsulation material, and separating the housing body composite into a plurality of optoelectronic semiconductor components.

    SEMICONDUCTOR COMPONENT AND METHOD OF PRODUCING A SEMICONDUCTOR COMPONENT

    公开(公告)号:US20180249578A1

    公开(公告)日:2018-08-30

    申请号:US15902282

    申请日:2018-02-22

    Abstract: A semiconductor component includes first and second connection contacts provided to electrically contact a semiconductor body, a carrier on which a semiconductor chip is arranged, the carrier including a base body including a chip mounting surface and a connection surface opposite the chip mounting surface and at least one side surface, that connects the chip mounting surface to the connection surface, a first electrically conductive contact layer electrically conductively connected to the first connection contact, and a second electrically conductive contact layer electrically conductively connected to the second connection contact, wherein the first and the second contact layer are applied to the base body and each include a first partial region arranged on the chip mounting surface, a second partial region arranged on a side surface and a third partial region arranged on the connection surface, and wherein the base body contains a radiation-transmissive base material.

    Radiation-Emitting Semiconductor Component and Production Method of a Plurality of Semiconductor Components

    公开(公告)号:US20180123007A1

    公开(公告)日:2018-05-03

    申请号:US15565112

    申请日:2016-04-05

    Abstract: A radiation-emitting semiconductor component and a method for producing a plurality of semiconductor components are disclosed. In an embodiment the component includes a semiconductor chip comprising a semiconductor layer sequence, a front side and a rear side opposite the front side, and a molded body molded on to the semiconductor chip at least in some places. The component further includes a thermal connector located on a rear side of the semiconductor component, wherein the rear side of the semiconductor component is opposite the front side of the semiconductor chip, wherein the thermal connector extends to the rear side of the semiconductor chip, wherein at least one electrical connection surface is located on the front side of the semiconductor chip, and wherein the at least one electrical connection surface is electrically-conductively connected to an electrical contact surface of the semiconductor component via a contact path running on the molded body.

    Semiconductor Chip, Optoelectronic Device with a Semiconductor Chip, and Method for Producing a Semiconductor Chip
    59.
    发明申请
    Semiconductor Chip, Optoelectronic Device with a Semiconductor Chip, and Method for Producing a Semiconductor Chip 有权
    具有半导体芯片的半导体芯片,光电子器件以及用于制造半导体芯片的方法

    公开(公告)号:US20170033092A1

    公开(公告)日:2017-02-02

    申请号:US15303436

    申请日:2015-03-18

    Abstract: A semiconductor chip, an optoelectronic device including a semiconductor chip, and a method for producing a semiconductor chip are disclosed. In an embodiment the chip includes a semiconductor body with a first main surface and a second main surface arranged opposite to the first main surface, wherein the semiconductor body includes a p-doped sub-region, which forms part of the first main surface, and an n-doped sub-region, which forms part of the second main surface and a metallic contact element that extends from the first main surface to the second main surface and that is electrically isolated from one of the sub-regions.

    Abstract translation: 公开了半导体芯片,包括半导体芯片的光电子器件和半导体芯片的制造方法。 在一个实施例中,芯片包括具有第一主表面和与第一主表面相对布置的第二主表面的半导体本体,其中半导体主体包括形成第一主表面的一部分的p掺杂子区域,以及 形成第二主表面的一部分的n掺杂子区域和从第一主表面延伸到第二主表面并且与一个子区域电隔离的金属接触元件。

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