公开(公告)号：US20050236654A1

公开(公告)日：2005-10-27

申请号：US11104572

申请日：2005-04-13

申请人： Takeshi Kijima ,  Yasuaki Hamada

发明人： Takeshi Kijima ,  Yasuaki Hamada

IPC分类号： B41J2/045 ,  B41J2/055 ,  B41J2/135 ,  B41J2/14 ,  B41J2/145 ,  C01G25/00 ,  C01G33/00 ,  C04B35/49 ,  C04B35/491 ,  H01L21/02 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/115 ,  H01L41/09 ,  H01L41/187 ,  H01L41/29 ,  H01L41/39 ,  H01L29/76

CPC分类号： H01L28/55 ,  B41J2/14233 ,  H01L27/105 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/65 ,  H01L41/0805 ,  H01L41/1876 ,  H01L41/318

摘要： To provide ferroelectric film laminated bodies with few crystal defects and having excellent characteristics. A ferroelectric film laminated body includes an electrode and a PZT system ferroelectric film formed on the electrode. In the ferroelectric film, Nb replaces Ti composition by 2.5 mol % or more but 40 mol % or less, and the electrode does not include almost any oxygen that diffuses from the ferroelectric film.

摘要翻译： 提供具有很少晶体缺陷并且具有优异特性的铁电薄膜层叠体。 铁电体膜层叠体包括在电极上形成的电极和PZT系铁电膜。 在铁电体膜中，Nb代替Ti成分为2.5摩尔％以上且40摩尔％以下，并且电极不包含几乎从铁电体膜扩散的氧。

公开(公告)号：US20050167712A1

公开(公告)日：2005-08-04

申请号：US11035129

申请日：2005-01-14

申请人： Takeshi Kijima ,  Hiromu Miyazawa ,  Yasuaki Hamada

发明人： Takeshi Kijima ,  Hiromu Miyazawa ,  Yasuaki Hamada

IPC分类号： B41J2/045 ,  B41J2/055 ,  C04B35/49 ,  C04B35/491 ,  C04B35/493 ,  C23C18/12 ,  H01B3/12 ,  H01L21/02 ,  H01L21/31 ,  H01L21/316 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/105 ,  H01L27/115 ,  H01L41/04 ,  H01L41/09 ,  H01L41/18 ,  H01L41/187 ,  H01L29/76

CPC分类号： H01L21/02197 ,  C04B35/491 ,  C04B35/493 ,  C04B2235/3231 ,  C04B2235/3239 ,  C04B2235/3251 ,  C04B2235/3258 ,  C04B2235/3287 ,  C04B2235/3293 ,  C04B2235/3418 ,  C04B2235/3427 ,  C04B2235/76 ,  C04B2235/765 ,  C04B2235/768 ,  C04B2235/787 ,  C23C18/1216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02356 ,  H01L21/31691 ,  H01L27/105 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/65 ,  H01L41/0805 ,  H01L41/1876 ,  H01L41/318

摘要： To provide ferroelectric films with which highly reliable ferroelectric devices can be obtained. A ferroelectric film comprised of a perovskite structure ferroelectric shown by ABO3, including at least one type of Si2+, Ge2+ and Sn2+ as an A site doping ion, and at least Nb5+ as a B site doping ion.

摘要翻译： 提供可获得高可靠性的铁电体元件的铁电体膜。 由ABO 3所示的钙钛矿结构铁电体构成的铁电体膜，其包含至少一种类型的Si 2+，Ge 2+和Sn 2+作为A位点掺杂离子，至少Nb 5+作为B位点掺杂。

公开(公告)号：US20050146249A1

公开(公告)日：2005-07-07

申请号：US10970697

申请日：2004-10-21

申请人： Hiromu Miyazawa ,  Takeshi Kijima ,  Eiji Natori ,  Taku Aoyama ,  Setsuya Iwashita ,  Takamitsu Higuchi

发明人： Hiromu Miyazawa ,  Takeshi Kijima ,  Eiji Natori ,  Taku Aoyama ,  Setsuya Iwashita ,  Takamitsu Higuchi

IPC分类号： B41J2/045 ,  B41J2/055 ,  B41J2/135 ,  B41J2/14 ,  B41J2/145 ,  B41J2/16 ,  C04B35/49 ,  F04B9/00 ,  F04B43/04 ,  H01L41/09 ,  H01L41/18 ,  H01L41/187 ,  H01L41/22 ,  H01L41/319 ,  H01L41/39 ,  H02N2/00 ,  H03B5/30 ,  H03H9/02 ,  H03H9/05 ,  H03H9/145 ,  H03H9/17 ,  H03H9/25 ,  H03H9/64

CPC分类号： H03H9/0542 ,  B41J2/14233 ,  B41J2202/03 ,  F04B43/046 ,  H01L41/0815 ,  H01L41/1876 ,  H01L41/318 ,  H03H9/02574 ,  H03H9/02984 ,  H03H9/173 ,  H03H9/174 ,  H03H9/64

摘要： A piezoelectric film is provided having good piezoelectric properties. The piezoelectric film is represented by the following general formula: A1-bB1-aXaO3 wherein A contains Pb; B is at least one of Zr and Ti; X is at least one of V, Nb, Ta, Cr, Mo and W; a satisfies 0.05≦a≦0.3; and b satisfies 0.025≦b≦0.15.

摘要翻译： 提供具有良好的压电性能的压电膜。 压电膜由以下通式表示：A 1-b B 1-a X a O 3 3 / >其中A含有Pb; B是Zr和Ti中的至少一种; X是V，Nb，Ta，Cr，Mo和W中的至少一种; a满足0.05 <= a <= 0.3; 并且b满足0.025≤b≤0.15。

公开(公告)号：US06307225B1

公开(公告)日：2001-10-23

申请号：US09596574

申请日：2000-06-16

申请人： Takeshi Kijima ,  Hironori Matsunaga

发明人： Takeshi Kijima ,  Hironori Matsunaga

IPC分类号： H01L2176

CPC分类号： H01L21/28194 ,  H01L21/31691 ,  H01L28/56 ,  H01L29/513 ,  H01L29/516 ,  H01L29/517 ,  H01L29/78391 ,  Y10S148/081 ,  Y10S148/118

摘要： A bismuth silicate film (insulating film) 3 of Bi2SiO5 oriented predominantly in the direction of (100) is formed on a Si substrate 2 and a ferroelectric thin film 4 is formed on the bismuth silicate film 3 to create an MFIS structure having a c-axis-oriented ferroelectric thin film 4 formed with good reproducibility. A highly reliable thin film device is produced by applying the MFIS structure to a FET.

摘要翻译： 主要在（100）方向取向的Bi2SiO5的铋硅酸盐膜（绝缘膜）3形成在Si衬底2上，并且在硅酸铋膜3上形成铁电薄膜4，以产生具有c- 轴向取向的铁电薄膜4形成有良好的再现性。 通过将MFIS结构应用于FET来制造高度可靠的薄膜器件。

公开(公告)号：US5821005A

公开(公告)日：1998-10-13

申请号：US612584

申请日：1996-03-08

申请人： Takeshi Kijima ,  Sakiko Satoh ,  Hironori Matsunaga ,  Masayoshi Koba

发明人： Takeshi Kijima ,  Sakiko Satoh ,  Hironori Matsunaga ,  Masayoshi Koba

IPC分类号： C01G29/00 ,  C23C16/02 ,  C23C16/40 ,  H01B3/00 ,  H01B3/12 ,  H01B17/60 ,  H01L21/316 ,  H01L21/8242 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792 ,  H01L49/02 ,  B32B9/00

CPC分类号： C23C16/40 ,  C23C16/0272

摘要： A ferroelectrics thin-film coated substrate is manufactured in a low-temperature process by using a ferroelectrics having a dense and even surface and exhibiting a large residual spontaneous polarization. A ferroelectrics thin-film coated substrate has a structure with a buffer layer, a growth layer allowing a ferroelectrics thin-film to grow, and a ferroelectrics thin-film made of a ferroelectric material having a layered crystalline structure expressed in the chemical formula Bi.sub.2 A.sub.m-1 B.sub.m O.sub.3m+3 (A is selected from Na.sup.1+, K.sup.1+, Pb.sup.2+, Ca.sup.2+, Sr.sup.2+, Ba.sup.2+, Bi.sup.3+ and the like, B is selected from Fe.sup.3+, Ti.sup.4+, Nb.sup.5+, Ta.sup.5+, W.sup.6+ and Mo.sup.6+, and m is an integer not less than 1) formed in succession.

摘要翻译： 通过使用具有致密且均匀的表面并表现出大的残余自发极化的铁电体，在低温工艺中制造铁电薄膜涂覆基板。 铁电薄膜被覆基板具有缓冲层，允许铁电体薄膜生长的生长层的结构，以及由化学式Bi2 Am表示的具有层状结晶结构的铁电体的铁电体薄膜 -1 Bm O3m + 3（A选自Na1 +，K1 +，Pb2 +，Ca2 +，Sr2 +，Ba2 +，Bi3 +等，B选自Fe3 +，Ti4 +，Nb5 +，Ta5 +，W6 +和Mo6 +，m为整数 小于1）。

公开(公告)号：US5757061A

公开(公告)日：1998-05-26

申请号：US643302

申请日：1996-05-08

申请人： Sakiko Satoh ,  Takeshi Kijima ,  Hironori Matsunaga ,  Masayoshi Koba

发明人： Sakiko Satoh ,  Takeshi Kijima ,  Hironori Matsunaga ,  Masayoshi Koba

IPC分类号： C01G29/00 ,  C30B29/32 ,  H01L21/02 ,  H01L21/31 ,  H01L21/314 ,  H01L21/316 ,  H01L21/822 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/04 ,  H01L27/10 ,  H01L27/105 ,  H01L29/788 ,  H01L29/792 ,  H01L37/02 ,  H01L49/02 ,  H01L29/00 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062

CPC分类号： H01L28/56

摘要： A ferroelectric thin film coated substrate is obtained by a producing method of forming a crystalline thin film on a substrate by means of a MOCVD method at a substrate temperature at which crystal grows and of forming a ferroelectric thin film on the crystalline thin film by means of the MOCVD method at a film forming temperature, which is lower than the film forming temperature of the crystalline thin film. This producing method makes it possible to produce a ferroelectric thin film, where a surface of the thin film is dense and even, leakage current properties are excellent and sufficiently large remanent spontaneous polarization is shown, at a lower temperature.

摘要翻译： 通过在晶体生长的衬底温度下通过MOCVD法在衬底上形成结晶薄膜并在结晶薄膜上形成铁电薄膜的方法获得铁电薄膜涂覆衬底，借助于 在成膜温度下的MOCVD方法，其低于结晶薄膜的成膜温度。 通过该制造方法，能够在较低温度下制造薄膜的表面致密且均匀，漏电流特性优异，剩余自发极化足够大的强电介质薄膜。

公开(公告)号：US09486834B2

公开(公告)日：2016-11-08

申请号：US14235626

申请日：2011-07-29

申请人： Takeshi Kijima ,  Yuuji Honda

发明人： Takeshi Kijima ,  Yuuji Honda

IPC分类号： H01L41/187 ,  H01L41/083 ,  H01L41/318 ,  B05D5/00 ,  H01L41/08

CPC分类号： H01L41/0815 ,  B05D1/005 ,  B05D3/0254 ,  B05D5/00 ,  B05D7/54 ,  H01L41/187 ,  H01L41/1873 ,  H01L41/1878 ,  H01L41/318 ,  Y10T428/26

摘要： To produce a ferroelectric film formed of a lead-free material. The ferroelectric film according to an aspect of the present invention includes a (K1−XNaX)NbO3 film or a BiFeO3 film having a perovskite structure and a crystalline oxide preferentially oriented to (001) formed on at least one of the upper side and lower side of the (K1−XNaX)NbO3 film or BiFeO3 film, and X satisfies the formula below 0.3≦X≦0.7.

摘要翻译： 制造由无铅材料形成的铁电体膜。 根据本发明的一个方面的铁电体膜包括（K1-XNaX）NbO3膜或具有钙钛矿结构的BiFeO 3膜和优先取向成（001）的结晶氧化物，其形成在上侧和下侧的至少一个上 的（K1-XNaX）NbO3膜或BiFeO3膜，X满足下式0.3≤nlE; X＆lt; l1; 0.7。

公开(公告)号：US20140225317A1

公开(公告)日：2014-08-14

申请号：US14235207

申请日：2011-07-29

申请人： Takeshi Kijima ,  Yuuji Honda

发明人： Takeshi Kijima ,  Yuuji Honda

IPC分类号： B29C39/00

CPC分类号： B29C39/003 ,  C01G33/006 ,  C01P2002/34 ,  C01P2002/72 ,  C01P2004/03 ,  H01L21/02197 ,  H01L21/02282 ,  H01L41/1873 ,  H01L41/318 ,  H01L41/331

摘要： To provide a method for manufacturing a ferroelectric film formed of a lead-free material. The method for manufacturing a ferroelectric film according to an aspect of the present invention is a method for manufacturing a ferroelectric film including the steps of pouring a sol-gel solution for forming (K1-XNaX)NbO3 into a mold 3, calcining the sol-gel solution to form a (K1-XNaX)NbO3 material film inside the mold 3, heat-treating and crystallizing the (K1-XNaX)NbO3 material film in an oxygen atmosphere to form a (K1-XNaX)NbO3 crystallized film inside the mold 3 and removing the mold 3 through etching, and is characterized in that the mold 3 is more easily etched than the (K1-XNaX)NbO3 crystallized film and the X satisfies a formula below 0.3≦X≦0.7.

摘要翻译： 提供一种制造由无铅材料形成的铁电体膜的方法。 根据本发明的一个方面的铁电体膜的制造方法是一种强电介质膜的制造方法，其特征在于，包括以下步骤：将用于形成（K1-XNaX）NbO3的溶胶 - 凝胶溶液倒入模具3中， 凝胶溶液在模具3内形成（K1-XNaX）NbO3材料膜，在氧气氛中热处理和结晶（K1-XNaX）NbO3材料膜，以在模具内形成（K1-XNaX）NbO3结晶膜 并且通过蚀刻去除模具3，其特征在于，模具3比（K1-XNaX）NbO 3结晶膜更容易蚀刻，并且X满足低于0.3＆lt; NlE; X＆lt; lE; 0.7的公式。

公开(公告)号：US08186807B2

公开(公告)日：2012-05-29

申请号：US12393126

申请日：2009-02-26

申请人： Takeshi Kijima ,  Minoru Usui

发明人： Takeshi Kijima ,  Minoru Usui

IPC分类号： B41J2/14

CPC分类号： B41J2/14 ,  B41J2/04 ,  B41J2002/041 ,  B41J2202/11

摘要： A droplet ejection device includes a pressure chamber that includes a cavity surrounded by a side wall and a bottom wall, a deformable substrate that is provided above the pressure chamber to cover the cavity and that is parallel to the bottom wall, a magnetic body having an opening that is provided above the deformable substrate and that is fixed to the deformable substrate, and a coil that is disposed above the deformable substrate, that surrounds the magnetic body, and that is fixed to a fixing portion provided above the side wall.

摘要翻译： 液滴喷射装置包括压力室，该压力室包括被侧壁和底壁包围的空腔，设置在压力室上方以覆盖空腔并且平行于底壁的可变形基板，具有 开口，其设置在可变形基板的上方并且固定到可变形基板上;线圈，其设置在可变形基板的上方，围绕磁体，并且固定到设置在侧壁上方的固定部。

公开(公告)号：US07914130B2

公开(公告)日：2011-03-29

申请号：US12398351

申请日：2009-03-05

申请人： Takeshi Kijima ,  Shoichi Iino

发明人： Takeshi Kijima ,  Shoichi Iino

IPC分类号： B41J2/045

CPC分类号： B41J2/14274 ,  B41J2202/11

摘要： A droplet ejection device includes: a substrate having first, second, third & fourth pressure chambers extending in a first direction; a nozzle plate below the substrate & having first, second, third & fourth nozzle apertures continuous with first, second, third & forth pressure chambers, respectively; a vibration plate above the substrate; first, second, third & fourth piezoelectric elements above the vibration plate & above first, second, third & fourth pressure chambers. wherein, viewed in a second direction orthogonal to the first direction, the first nozzle aperture positioned to overlap the third nozzle aperture & doesn't overlap the second & fourth nozzle apertures; the second nozzle aperture overlaps the fourth nozzle aperture & doesn't overlap the first & third nozzle apertures, viewed in the second direction; the first piezoelectric element positioned to overlap the third piezoelectric element & doesn't overlap the second & fourth piezoelectric elements, viewed in the second direction; & the second piezoelectric element overlaps the fourth piezoelectric element & doesn't overlap the first & third piezoelectric elements.

摘要翻译： 液滴喷射装置包括：具有沿第一方向延伸的第一，第二，第三和第四压力室的基板; 位于基底下方的喷嘴板，分别具有与第一，第二，第三和第四压力室连续的第一，第二，第三和第四喷嘴孔口; 基板上方的振动板; 振动板上方的第一，第二，第三和第四压电元件以及第一，第二，第三和第四压力室之上。 其中，从与所述第一方向正交的第二方向观察，所述第一喷嘴孔定位成与所述第三喷嘴孔重叠，并且不与所述第二和第四喷嘴孔重叠; 第二喷嘴孔与第四喷嘴孔重叠，并且在第二方向上不与第一和第三喷嘴孔重叠; 第一压电元件定位成与第三压电元件重叠，并且在第二方向上不与第二和第四压电元件重叠; 并且第二压电元件与第四压电元件重叠，并且不与第一和第三压电元件重叠。