System and methods for usage management in multi-level security networks
    55.
    发明授权
    System and methods for usage management in multi-level security networks 有权
    多级安全网络中的使用管理系统和方法

    公开(公告)号:US09270701B1

    公开(公告)日:2016-02-23

    申请号:US13871250

    申请日:2013-04-26

    Applicant: STC.UNM

    CPC classification number: H04L63/20 H04L63/0227

    Abstract: A system and methods for transferring information between two or more incompatible security domains or levels of classification by embedding policy-centric content management components into an information-centric network. Specifically, overlay architectures enable cloud computing for multi-level security environments.

    Abstract translation: 通过将以策略为中心的内容管理组件嵌入到以信息为中心的网络中,在两个或多个不兼容的安全域或分级级别之间传送信息的系统和方法。 具体来说,覆盖架构可以实现多层次安全环境的云计算。

    Low defect density lattice-mismatched semiconductor devices and methods of fabricating same
    56.
    发明授权
    Low defect density lattice-mismatched semiconductor devices and methods of fabricating same 有权
    低缺陷密度晶格失配的半导体器件及其制造方法

    公开(公告)号:US09269569B1

    公开(公告)日:2016-02-23

    申请号:US13444712

    申请日:2012-04-11

    Abstract: Lattice-mismatched semiconductor devices having a substrate, a first epitaxial film disposed thereon, a dielectric material, and a second epitaxial film. The first epitaxial film contains etch pits that extend from the outer surface of the first epitaxial film into the first epitaxial film. The dielectric material is disposed within the etch pits and blocks at least some of the threading dislocations in the first epitaxial film from propagating into the second epitaxial film. Semiconductor devices containing a silicon (Si) substrate or a silicon germanium (SiGe) substrate, a germanium (Ge) film disposed over the substrate, and a dielectric material. Methods for producing such semiconductor devices.

    Abstract translation: 具有衬底的晶格不匹配的半导体器件,设置在其上的第一外延膜,电介质材料和第二外延膜。 第一外延膜含有从第一外延膜的外表面延伸到第一外延膜的蚀刻凹坑。 介电材料设置在蚀刻凹坑内,并且阻挡第一外延膜中的至少一些穿透位错传播到第二外延膜。 包含硅(Si)衬底或硅锗(SiGe)衬底,设置在衬底上的锗(Ge)膜)和电介质材料的半导体器件。 用于制造这种半导体器件的方法。

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