公开(公告)号：US20050058169A1

公开(公告)日：2005-03-17

申请号：US10665469

申请日：2003-09-22

Applicant: Toshikazu Onishi

Inventor： Toshikazu Onishi

IPC: H01S5/00 ,  H01S5/22 ,  H01S5/223 ,  H01S5/30 ,  H01S5/343

CPC classification number: B82Y20/00 ,  H01S5/2206 ,  H01S5/2231 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/34326 ,  H01S5/3436

Abstract: A semiconductor laser device has an active layer, a first cladding layer formed on the active layer, and a second cladding layer formed on the first cladding layer. The first cladding layer is doped with magnesium as a first impurity to have a high resistivity. The second cladding layer is doped with zinc as a second impurity to have a resistivity lower than the resistivity of the first cladding layer.

Abstract translation: 半导体激光器件具有有源层，形成在有源层上的第一覆层和形成在第一覆层上的第二覆层。 第一包层掺杂有镁作为第一杂质以具有高电阻率。 第二包层掺杂有锌作为第二杂质，以使其电阻率低于第一包层的电阻率。

公开(公告)号：US06816530B2

公开(公告)日：2004-11-09

申请号：US10261423

申请日：2002-09-30

Applicant: Federico Capasso ,  Alfred Yi Cho ,  Raffaele Colombelli ,  Claire F Gmachl ,  Nina Owschimikow ,  Deborah Lee Sivco

Inventor： Federico Capasso ,  Alfred Yi Cho ,  Raffaele Colombelli ,  Claire F Gmachl ,  Nina Owschimikow ,  Deborah Lee Sivco

IPC: H01S310

CPC classification number: B82Y20/00 ,  G02F1/39 ,  H01S3/1083 ,  H01S3/109 ,  H01S5/0604 ,  H01S5/0605 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/3402 ,  H01S5/3425

Abstract: A monolithic apparatus has a laser optical cavity. The laser optical cavity has a multi-layer structure that includes a first active semiconductor multi-layer and a second semiconductor multi-layer. The second semiconductor multi-layer is located laterally adjacent to the first active semiconductor multi-layer. The first active semiconductor multi-layer includes a sequence of quantum well structures that produce light of a lasing frequency in response to being electrically pumped. The second semiconductor multi-layer includes a sequence of quantum well structures and is configured to both absorb light of the lasing frequency and produce one of parametric light and harmonic light in response to absorbing light of the lasing frequency.

Abstract translation: 单片设备具有激光光腔。 激光光腔具有包括第一有源半导体多层和第二半导体多层的多层结构。 第二半导体多层位于与第一有源半导体多层横向相邻的位置。 第一有源半导体多层包括量子阱结构序列，其响应于被电泵浦产生激光频率的光。 第二半导体多层包括一系列量子阱结构，并且被配置为既吸收激光频率的光并且响应于吸收激光频率的光而产生参量光和谐波光之一。

公开(公告)号：US06810065B1

公开(公告)日：2004-10-26

申请号：US09996009

申请日：2001-11-28

Applicant: Ryan Likeke Naone

Inventor： Ryan Likeke Naone

IPC: H01S5183

CPC classification number: H01S5/18311 ,  H01S5/02284 ,  H01S5/0427 ,  H01S5/0683 ,  H01S5/18361 ,  H01S5/3054 ,  H01S5/3095 ,  H01S5/32366

Abstract: An optoelectronic device having one or more DBR mirrors having a low voltage drop across the mirror layers and a high reflectivity for emission at a nominal wavelength of 1300 nm below, at and above room temperature. The low resistance DBR may be used as a top output mirror of a tunnel junction VCSEL that reduces resistance and optical losses by reducing the amount of p-type material within the device.

Abstract translation: 具有一个或多个DBR反射镜的光电子器件具有跨镜面层的低电压降，并且在室温以下或室温以上1300nm的额定波长处发射高反射率。 低电阻DBR可以用作隧道结VCSEL的顶部输出镜，其通过减少器件内的p型材料的量来降低电阻和光学损耗。

公开(公告)号：US20040208216A1

公开(公告)日：2004-10-21

申请号：US10842617

申请日：2004-05-10

Inventor： Ryan Likeke Naone ,  Andrew W. Jackson ,  Leo M.F. Chirovsky

IPC: H01S005/00

CPC classification number: B82Y20/00 ,  G02B6/4201 ,  G02B6/4202 ,  G02B6/4225 ,  G02B6/4237 ,  G02B6/424 ,  G02B6/4245 ,  G02B6/4263 ,  G02B6/4286 ,  H01L24/24 ,  H01S5/0208 ,  H01S5/02284 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18333 ,  H01S5/18341 ,  H01S5/18369 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/32366 ,  H01S5/34306 ,  H01S2301/166 ,  H01S2301/176

Abstract: Selectively oxidized vertical cavity lasers emitting at about 1290 nm using InGaAsN quantum wells that operate continuous wave below, at and above room temperature are reported. The lasers employ a semi-insulating GaAs substrate for reduced capacitance, high quality, low resistivity AlGaAs DBR mirror structures, and a strained active region based on InGaAsN. In addition, the design of the VCSEL reduces free carrier absorption of 1.3 nullm light in the p-type materials by placing relatively higher p-type dopant concentrations near standing wave nulls.

Abstract translation: 报道了使用InGaAsN量子阱在大约1290nm发射的选择性氧化的垂直腔激光器，其在室温以下处于连续波。 激光器采用半绝缘GaAs衬底，用于降低电容，高质量，低电阻率AlGaAs DBR镜结构，以及基于InGaAsN的应变有源区。 此外，VCSEL的设计通过在驻波零点附近放置相对较高的p型掺杂剂浓度来减少p型材料中1.3μm光的自由载流子吸收。

公开(公告)号：US06774389B2

公开(公告)日：2004-08-10

申请号：US10290254

申请日：2002-11-08

Applicant: Yoshihiko Hanamaki

Inventor： Yoshihiko Hanamaki

IPC: H01L2906

CPC classification number: H01L33/06 ,  B82Y20/00 ,  H01S5/2231 ,  H01S5/3054 ,  H01S5/3086

Abstract: A semiconductor optical device with improved optical gain and enhanced switching characteristics. The semiconductor optical device includes positive and negative electrodes for providing holes and electrons, respectively. The semiconductor optical device also includes an active layer between the positive and negative electrodes. The active layer includes a multiple quantum well structure having p-type quantum well layers and barrier layers. The quantum well layers are doped with an impurity that diffuses less than zinc so that trapping holes are produced and excessive electrons contributing no light emission are quenched by the trapping holes. The impurity can be beryllium, magnesium, or carbon.

Abstract translation: 具有改善的光学增益和增强的开关特性的半导体光学器件。 半导体光学器件分别包括用于提供空穴和电子的正极和负极。 半导体光学器件还包括在正极和负极之间的有源层。 有源层包括具有p型量子阱层和阻挡层的多量子阱结构。 量子阱层掺杂有杂质，其扩散小于锌，从而产生捕获空穴，并且不产生发光的过量电子被捕获孔骤冷。 杂质可以是铍，镁或碳。

公开(公告)号：US06744074B2

公开(公告)日：2004-06-01

申请号：US09968802

申请日：2001-10-03

Applicant: Hideyoshi Horie ,  Hirotaka Ohta ,  Toshinari Fujimori

Inventor： Hideyoshi Horie ,  Hirotaka Ohta ,  Toshinari Fujimori

IPC: H01L3300

CPC classification number: H01L33/44 ,  B82Y20/00 ,  H01L33/0045 ,  H01S5/0021 ,  H01S5/028 ,  H01S5/0281 ,  H01S5/0282 ,  H01S5/16 ,  H01S5/162 ,  H01S5/164 ,  H01S5/3054 ,  H01S5/3086 ,  H01S5/34313 ,  H01S5/34353

Abstract: Compound semiconductor light emitting devices capable of suppressing the surface state density on the facets of semiconductor light emitting devices such as semiconductor lasers for a long time and stable operating even when the passivation layer diffuses can be easily obtained. Compound semiconductor light emitting devices with an emission wavelength of &lgr; (nm) wherein a first conduction type of clad layer, an active layer and a second conduction type of clad layer are grown on a substrate and two facets are opposite to each other so as to form a cavity, characterized in that said active layer is transparent to the emission wavelength in the vicinities of the facets and that the surfaces of the first conduction type of clad layer, active layer and second conduction type of clad layer forming said facets are each coated with a passivation layer.

Abstract translation: 即使钝化层扩散，也能够长时间地抑制半导体激光器等半导体发光元件的面的表面状态密度，即使钝化层扩散也能够稳定地工作的化合物半导体发光元件。 发光波长为λ（nm）的化合物半导体发光器件，其中在衬底上生长第一导电类型的包层，有源层和第二导电类型的包层，并且两个面彼此相对，从而 形成空腔，其特征在于，所述有源层对于小面附近的发射波长是透明的，并且形成所述小面的第一导电类型的包覆层，有源层和第二导电类型的覆盖层的表面各自被涂覆 具有钝化层。

公开(公告)号：US20030218181A1

公开(公告)日：2003-11-27

申请号：US10439084

申请日：2003-05-15

Inventor： Stefan Bader ,  Berthold Hahn ,  Volker Hnullrle ,  Hans-Jurgen Lugauer

IPC: H01L021/00 ,  H01L033/00

CPC classification number: H01L33/32 ,  B82Y20/00 ,  H01L33/007 ,  H01L33/325 ,  H01S5/021 ,  H01S5/3054 ,  H01S5/34333

Abstract: A radiation-emitting semiconductor component has a high p-type conductivity. The semiconductor body of the component includes a substrate, preferably an SiC-based substrate, on which a plurality of GaN-based layers have been formed. The active region of these layers is arranged between at least one n-conducting layer and a p-conducting layer. The p-conducting layer is grown in tensile-stressed form. The p-doping that is used is preferably Mg.

Abstract translation: 辐射发射半导体组件具有高p型导电性。 元件的半导体主体包括其上形成有多个GaN基层的衬底，优选为SiC基衬底。 这些层的有源区域被布置在至少一个n导电层和p导电层之间。 p导电层以拉伸应力形式生长。 使用的p掺杂优选为Mg。

公开(公告)号：US06574258B2

公开(公告)日：2003-06-03

申请号：US09770115

申请日：2001-01-23

Applicant: Hiroyuki Yamazaki

Inventor： Hiroyuki Yamazaki

IPC: H01L3300

CPC classification number: H01S5/227 ,  H01S5/026 ,  H01S5/1014 ,  H01S5/1064 ,  H01S5/2226 ,  H01S5/2272 ,  H01S5/3054 ,  H01S5/3211

Abstract: A semiconductor laser, optical module using a semiconductor laser, and optical communication system using a semiconductor laser. The semiconductor laser has an active layer between two semiconductor layers and different conduction types and current block layers surrounding the active layer. One of the semiconductor layers has a first growth layer and a second growth layer formed on the first growth layer by a re-growth process after a growth process for the first growth layer. The doping concentration of the first growth layer, in the region of the interface with the second growth layer, is in the range of between 1.5 to 5 times the doping concentration of the second growth layer.

Abstract translation: 半导体激光器，使用半导体激光器的光学模块和使用半导体激光器的光通信系统。 半导体激光器具有在两个半导体层之间的有源层和不同的导电类型以及围绕有源层的当前阻挡层。 其中一个半导体层具有第一生长层和第二生长层，该第二生长层在第一生长层的生长过程之后通过再生长工艺形成在第一生长层上。 在与第二生长层的界面区域中的第一生长层的掺杂浓度在第二生长层的掺杂浓度的1.5至5倍的范围内。

公开(公告)号：US20030042479A1

公开(公告)日：2003-03-06

申请号：US10173753

申请日：2002-06-19

Inventor： Tomonobu Tsuchiya

IPC: H01L029/06 ,  H01L031/0328 ,  H01L031/0336 ,  H01L031/00

CPC classification number: B82Y20/00 ,  H01L21/02392 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02581 ,  H01S5/2223 ,  H01S5/2226 ,  H01S5/2231 ,  H01S5/227 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3086 ,  H01S5/3407 ,  H01S5/34306 ,  H01S5/34313 ,  H01S5/34366

Abstract: A modulation doped multiple quantum well structure having a steep Zn profile of several nm by the balance between an increase in a Zn concentration and a decrease in Zn diffusion by using metal organic vapor phase epitaxy using Zn, in which an InGaAlAs quaternary alloy is used and the Zn concentration and the range for crystal composition are defined to equal to or less than the critical concentration at which Zn diffuses abruptly in each of InGaAlAs compositions.

Abstract translation: 通过使用使用InGaAlAs四元合金的Zn的使用金属有机气相外延的Zn浓度的增加和Zn扩散的减少之间的平衡，具有几nm的陡的Zn分布的调制掺杂多量子阱结构，以及 Zn浓度和晶体组成的范围被定义为等于或小于在每个InGaAlAs组合物中Zn扩散的临界浓度。

公开(公告)号：US20030035452A1

公开(公告)日：2003-02-20

申请号：US10212202

申请日：2002-08-02

Inventor： Natsumi Ueda

IPC: H01S005/00 ,  H01S003/08

CPC classification number: H01S5/18313 ,  H01S5/305 ,  H01S5/3054 ,  H01S2304/04

Abstract: A surface emitting semiconductor laser device has a pair of DBRs having opposite conductivity types, a pair of cladding layers having opposite conductivity types, an undoped active layer and a current confinement layer. The boundary between the p-type region and the n-type region of the laser device resides within the active layer, thereby reducing the operating voltage of the laser device.

Abstract translation: 表面发射半导体激光器件具有一对具有相反导电类型的DBR，一对具有相反导电类型的覆层，未掺杂的有源层和电流限制层。 激光器件的p型区域和n型区域之间的边界位于有源层内，从而降低了激光器件的工作电压。