公开(公告)号：US20210008687A1

公开(公告)日：2021-01-14

申请号：US16923688

申请日：2020-07-08

Applicant: Cabot Microelectronics Corporation

Inventor： Rui MA ,  Lin Fu ,  Chen-Chih Tsai ,  Jaeseck Lee ,  Sarah Brosnan

IPC: B24B37/24

Abstract: A chemical-mechanical polishing pad comprising a thermosetting polyurethane polishing layer includes an isocyanate-terminated urethane prepolymer, a polyamine curative, and a cyclohexanedimethanol curative. The polyamine curative and the cyclohexanedimethanol curative are in a molar ratio of polyamine curative to cyclohexanedimethanol curative in a range from about 20:1 to about 1:1.

公开(公告)号：US20200172760A1

公开(公告)日：2020-06-04

申请号：US16208742

申请日：2018-12-04

Applicant: Cabot Microelectronics Corporation

Inventor： Steven KRAFT ,  Fernando HUNG LOW ,  Daniel CLINGERMAN ,  Roman A. IVANOV ,  Steven GRUMBINE

IPC: C09G1/02 ,  H01L21/321

Abstract: A chemical mechanical polishing composition for polishing a substrate includes a liquid carrier and cationic metal oxide abrasive particles dispersed in the liquid carrier. The cationic metal oxide abrasive particles have a surface modified with at least one compound consisting of a silyl group having at least one quaternary ammonium group. A method for chemical mechanical polishing a substrate including a metal layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the metal layer from the substrate and thereby polish the substrate.

公开(公告)号：US10562149B2

公开(公告)日：2020-02-18

申请号：US15273855

申请日：2016-09-23

Applicant: Cabot Microelectronics Corporation

Inventor： Lin Fu ,  Rui Ma ,  Nathan Speer ,  Chen-Chih Tsai ,  Kathryn Bergman

IPC: B24B37/24 ,  B24B37/04 ,  B24B37/22 ,  B24D18/00 ,  B24B37/14

Abstract: A chemical-mechanical polishing pad comprising a polyurethane polishing layer having a high storage modulus at low temperatures and a low storage modulus at high temperatures is disclosed. For example, the disclosed pad embodiments may be fabricated from a thermoplastic polyurethane having a ratio of storage modulus at 25 degrees C. to storage modulus at 80 degrees C. of 50 or more. The thermoplastic polyurethane polishing layer may further optionally have a Shore D hardness of 70 or more, a tensile elongation of 320 percent or less, a storage modulus at 25 degrees C. of 1200 MPa or more, and/or a storage modulus at 80 degrees C. of 15 MPa or less.

公开(公告)号：US10522341B2

公开(公告)日：2019-12-31

申请号：US15825305

申请日：2017-11-29

Applicant: Cabot Microelectronics Corporation

Inventor： Helin Huang ,  Ji Cui

IPC: C09G1/06 ,  H01L21/02 ,  H01L21/321 ,  C11D3/22 ,  C11D3/20 ,  C11D17/00 ,  C11D3/48 ,  C11D3/00 ,  C11D11/00 ,  C11D3/43

Abstract: Described is a post-CMP cleaning solution and methods useful to remove residue from a CMP substrate or to prevent formation of residue on a surface of a CMP substrate.

公开(公告)号：US10508219B2

公开(公告)日：2019-12-17

申请号：US15346835

申请日：2016-11-09

Applicant: Cabot Microelectronics Corporation

Inventor： Steven Grumbine ,  Shoutian Li ,  William Ward ,  Pankaj Singh ,  Jeffrey Dysard

IPC: C09G1/02 ,  C09K3/14 ,  B24B37/04 ,  H01L21/3105

Abstract: The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier and abrasive particles that have been treated with a compound.

公开(公告)号：US10100272B2

公开(公告)日：2018-10-16

申请号：US15327326

申请日：2015-07-17

Applicant: Cabot Microelectronics Corporation

Inventor： Roman Ivanov ,  Cheng-yuan Ko ,  Fred Sun

IPC: C11D7/32 ,  C11D11/00 ,  C11D7/36 ,  C11D7/26 ,  H01L21/02 ,  H01L21/321 ,  H01L21/768

Abstract: The invention provides a composition for cleaning contaminants from semiconductor wafers following chemical-mechanical polishing. The cleaning composition contains a bulky protecting ligand, an organic amine, an organic inhibitor, and water. The invention also provides methods for using the cleaning composition.

公开(公告)号：US09850403B2

公开(公告)日：2017-12-26

申请号：US15603634

申请日：2017-05-24

Applicant: Cabot Microelectronics Corporation

Inventor： Steven Kraft ,  Andrew Wolff ,  Phillip W. Carter ,  Kristin Hayes ,  Benjamin Petro

IPC: H01L21/302 ,  H01L21/461 ,  C09G1/02 ,  B24B37/04 ,  C23F3/04 ,  H01L21/321

CPC classification number: C09G1/02 ,  B24B37/044 ,  C23F3/04 ,  H01L21/3212

Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) abrasive particles, (b) a cobalt accelerator selected from a compound having the formula: NR1R2R3 wherein R1, R2, and R3 are independently selected from hydrogen, carboxyalkyl, substituted carboxyalkyl, hydroxyalkyl, substituted hydroxyalkyl and aminocarbonylalkyl, wherein none or one of R1, R2, and R3 are hydrogen; dicarboxyheterocycles; heterocyclylalkyl-α-amino acids; N-(amidoalkyl)amino acids; unsubstituted heterocycles; alkyl-substituted heterocycles; substituted-alkyl-substituted heterocycles; N-aminoalkyl-α-amino acids; and combinations thereof, (c) a cobalt corrosion inhibitor, (d) an oxidizing agent that oxidizes a metal, and (e) water, wherein the polishing composition has a pH of about 3 to about 8.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains cobalt.

公开(公告)号：US09828528B2

公开(公告)日：2017-11-28

申请号：US15338724

申请日：2016-10-31

Applicant: Cabot Microelectronics Corporation

Inventor： Brian Reiss ,  Dana Sauter Van Ness ,  Viet Lam ,  Alexander Hains ,  Steven Kraft ,  Renhe Jia

IPC: C09G1/02 ,  B24B1/00 ,  B24B37/04 ,  C09G1/00 ,  C09G1/04 ,  C09G1/06 ,  C09K3/14 ,  C09K13/06 ,  H01L21/306 ,  H01L21/321 ,  H01L21/3105 ,  B24B37/20

CPC classification number: C09G1/02 ,  B24B1/00 ,  B24B37/044 ,  B24B37/20 ,  C09G1/00 ,  C09G1/04 ,  C09G1/06 ,  C09K3/1409 ,  C09K3/1454 ,  C09K3/1463 ,  C09K13/06 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212

Abstract: The invention provides a chemical-mechanical polishing composition including first abrasive particles, wherein the first abrasive particles are wet-process ceria particles, have a median particle size of about 40 nm to about 100 nm, are present in the polishing composition at a concentration of about 0.005 wt. % to about 2 wt. %, and have a particle size distribution of at least about 300 nm, a functionalized heterocycle, a pH-adjusting agent, and an aqueous carrier, and wherein the pH of the polishing composition is about 1 to about 6. The invention also provides a method of polishing a substrate, especially a substrate comprising a silicon oxide layer, with the polishing composition.

公开(公告)号：US09803109B2

公开(公告)日：2017-10-31

申请号：US14612736

申请日：2015-02-03

Applicant: Cabot Microelectronics Corporation

Inventor： Hung-Tsung Huang ,  Ming-Chih Yeh ,  Chih-Pin Tsai

IPC: H01L21/302 ,  H01L21/461 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C25F3/00 ,  C09K13/00 ,  C09K13/04 ,  C09G1/04 ,  C09G1/00 ,  H01L21/321 ,  H01L21/306 ,  C09G1/02 ,  H01L21/304 ,  H01L21/3105 ,  C09D1/02 ,  C09K3/14

CPC classification number: C09G1/04 ,  C09D1/02 ,  C09G1/00 ,  C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212

Abstract: The invention provides a chemical-mechanical polishing composition comprising: (a) colloidal silica particles that are surface modified with metal ions selected from Mg, Ca, Al, B, Be, and combinations thereof, and wherein the colloidal silica particles have a surface hydroxyl group density of from about 1.5 hydroxyls per nm2 to about 8 hydroxyls per nm2 of a surface area of the particles, (b) an anionic surfactant, (c) a buffering agent, and (d) water, wherein the polishing composition has a pH of about 2 to about 7, and wherein the polishing composition is substantially free of an oxidizing agent that oxidizes a metal. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon nitride, silicon oxide, and/or polysilicon.

公开(公告)号：US09796882B2

公开(公告)日：2017-10-24

申请号：US15394090

申请日：2016-12-29

Applicant: Cabot Microelectronics Corporation

Inventor： Alexander W. Hains ,  Tina Li

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  C09G1/02

CPC classification number: C09G1/02

Abstract: Described are compositions useful in methods for chemical-mechanical processing a surface of a substrate, especially a substrate that contains dielectric material, wherein the composition contains cyclodextrin and an alkylamine.