公开(公告)号：US20180269182A1

公开(公告)日：2018-09-20

申请号：US15984499

申请日：2018-05-21

Applicant: Genesis Photonics Inc.

Inventor： Cheng-Wei Hung ,  Yu-Feng Lin

IPC: H01L25/065 ,  H01L23/60 ,  H01L33/48 ,  H01L33/64 ,  H01L25/075 ,  H01L27/02 ,  H01L27/15 ,  H01L29/866 ,  H01L33/08 ,  H01L33/10 ,  H01L33/60 ,  H01L23/00 ,  H01L33/52 ,  H01L33/50 ,  H01L33/56

CPC classification number: H01L25/0655 ,  H01L23/562 ,  H01L23/60 ,  H01L25/0657 ,  H01L25/0753 ,  H01L25/0756 ,  H01L27/0248 ,  H01L27/15 ,  H01L29/866 ,  H01L33/08 ,  H01L33/10 ,  H01L33/48 ,  H01L33/486 ,  H01L33/50 ,  H01L33/502 ,  H01L33/508 ,  H01L33/52 ,  H01L33/56 ,  H01L33/60 ,  H01L33/642 ,  H01L33/647 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/18161 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01L2933/0041 ,  H01L2933/0058 ,  H01L2924/00014

Abstract: A light-emitting device is provided. The light-emitting device includes a substrate having a long edge and a short edge, at least one electrode pad assembly, and at least one light-emitting element. The at least one electrode pad assembly is disposed on the substrate and includes a first electrode pad and a second electrode pad. The at least one light-emitting element has a plurality of electrodes electrically connected to the first electrode pad and the second electrode pad of the at least one electrode pad assembly. The first electrode pad and the second electrode pad are arranged along a direction parallel to the short side.

公开(公告)号：US10060581B2

公开(公告)日：2018-08-28

申请号：US15437430

申请日：2017-02-20

Applicant: Genesis Photonics Inc.

Inventor： Sheng-Yuan Sun ,  Po-Jen Su

IPC: F21K9/64 ,  F21V13/02 ,  F21V19/00 ,  H01L27/15 ,  F21V9/30 ,  H01L25/075 ,  H01L33/20 ,  H01L33/50 ,  F21Y101/00 ,  F21Y115/10 ,  F21Y113/10

CPC classification number: F21K9/64 ,  F21V9/30 ,  F21V13/02 ,  F21V19/0025 ,  F21Y2101/00 ,  F21Y2113/10 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L27/15 ,  H01L33/20 ,  H01L33/50 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light emitting module including a substrate, a plurality of first light emitting diode (LED) chips and a plurality of second LED chips is provided. The substrate has a cross-shaped central region and a peripheral region surrounding the cross-shaped central region. The first LED chips are disposed on the substrate and at least located in the cross-shaped central region. The second LED chips are disposed on the substrate and at least located in the peripheral region. A size of each second LED chip is smaller than a size of each first LED chip. The number of the first LED chips located in the peripheral region is smaller than that in the cross-shaped central region. The number of the second LED chips located in the cross-shaped central region is smaller than that in the peripheral region.

公开(公告)号：US10050173B2

公开(公告)日：2018-08-14

申请号：US15045273

申请日：2016-02-17

Applicant: Genesis Photonics Inc.

Inventor： Jing-En Huang ,  Kai-Shun Kang ,  Yu-Chen Kuo ,  Fei-Lung Lu ,  Teng-Hsien Lai

IPC: H01L33/22 ,  B28D5/00 ,  H01L33/00 ,  H01L33/20

Abstract: A light emitting device includes a semiconductor light emitting unit and a light-transmitting substrate. The light-transmitting substrate includes an upper surface having two long sides and two short sides and a side surface, and the semiconductor light emitting unit is disposed on the upper surface. The side surface includes two first surfaces, two second surfaces, and rough micro-structures. Each of the first surfaces is connected to one of the long sides of the upper surface, and each of the second surfaces is connected to one of the short sides of the upper surface. The rough micro-structures are formed on the first surfaces and the second surfaces, a covering rate of the rough micro-structures on each of the first surfaces is greater than or equal to a covering rate of the rough micro-structures on each of the second surfaces. A manufacturing method of the light emitting device is also provided.

公开(公告)号：US10038121B2

公开(公告)日：2018-07-31

申请号：US15045279

申请日：2016-02-17

Applicant: Genesis Photonics Inc.

Inventor： Yi-Ru Huang ,  Tung-Lin Chuang ,  Yan-Ting Lan ,  Sheng-Tsung Hsu ,  Chih-Ming Shen ,  Jing-En Huang ,  Teng-Hsien Lai ,  Hung-Chuan Mai ,  Kuan-Chieh Huang ,  Shao-Ying Ting

IPC: H01L33/46 ,  H01L33/38

Abstract: A light emitting diode including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, and a Bragg reflector structure. The emitting layer is configured to emit a light beam and is located between the first-type semiconductor layer and the second-type semiconductor layer. The light beam has a peak wavelength in a light emitting wavelength range. The first-type semiconductor layer, the emitting layer, and the second-type semiconductor layer are located on a same side of the Bragg reflector structure. A reflectance of the Bragg reflector structure is greater than or equal to 95% in a reflective wavelength range at least covering 0.8X nm to 1.8X nm, and X is the peak wavelength of the light emitting wavelength range.

公开(公告)号：US20180211942A1

公开(公告)日：2018-07-26

申请号：US15924461

申请日：2018-03-19

Applicant: Genesis Photonics Inc.

Inventor： Cheng-Wei Hung ,  Jui-Fu Chang ,  Chin-Hua Hung ,  Yu-Feng Lin

IPC: H01L25/075 ,  H01L33/60 ,  H01L33/50

CPC classification number: H01L25/0753 ,  H01L33/486 ,  H01L33/502 ,  H01L33/505 ,  H01L33/508 ,  H01L33/54 ,  H01L33/56 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/16225 ,  H01L2933/0033 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0058

Abstract: A light-emitting device includes a substrate, a light-emitting component, a wavelength conversion component, an adhesive and a reflective layer. The light-emitting component is disposed on the substrate. The wavelength conversion component includes a high-density phosphor layer and a lower-density phosphor layer. The adhesive is formed between the light-emitting device and the high-density phosphor layer. The reflective layer is formed above the substrate and covers a lateral surface of the light-emitting component, a lateral surface of the adhesive and a lateral surface of the wavelength conversion component.

公开(公告)号：US20180182742A1

公开(公告)日：2018-06-28

申请号：US15903156

申请日：2018-02-23

Applicant: Genesis Photonics Inc.

Inventor： Tsung-Syun Huang ,  Chih-Chung Kuo ,  Yi-Ru Huang ,  Chih-Ming Shen ,  Kuan-Chieh Huang ,  Jing-En Huang

IPC: H01L25/075 ,  H01L33/58 ,  H01L33/10 ,  H01L33/20 ,  H01L33/38 ,  H01L33/40 ,  H01L33/42 ,  H01L33/46 ,  H01L33/50 ,  H01L33/52 ,  H01L33/56 ,  H01L33/62 ,  H01L33/00 ,  H01L33/54

CPC classification number: H01L25/0753 ,  H01L33/0095 ,  H01L33/10 ,  H01L33/20 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L33/507 ,  H01L33/52 ,  H01L33/54 ,  H01L33/56 ,  H01L33/58 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/005 ,  H01L2933/0058 ,  H01L2924/00014

Abstract: The disclosure relates to a high-voltage light-emitting diode (HV LED) and a manufacturing method thereof. A plurality of LED dies connected in series, in parallel, or in series and parallel are formed on a substrate. A side surface of the first semiconductor layer of part of the LED dies is aligned with a side surface of the substrate, such that no space for exposing the substrate is reserved between the LED dies and the edges of the substrate, the ratio of the substrate being covered by the LED dies is increased, that is, light-emitting area per unit area is increased, and the efficiency of light extraction of HV LED is improved.

公开(公告)号：US09997676B2

公开(公告)日：2018-06-12

申请号：US15268654

申请日：2016-09-19

Applicant: Genesis Photonics Inc.

Inventor： Cheng-Wei Hung ,  Chin-Hua Hung ,  Long-Chi Du ,  Jui-Fu Chang ,  Po-Tsun Kuo ,  Hao-Chung Lee ,  Yu-Feng Lin

IPC: H01L33/50 ,  H01L33/38 ,  H01L33/56 ,  H01L33/46 ,  H01L21/56 ,  H01L25/075

CPC classification number: H01L33/502 ,  H01L21/568 ,  H01L25/0753 ,  H01L33/38 ,  H01L33/46 ,  H01L33/50 ,  H01L33/504 ,  H01L33/508 ,  H01L33/56 ,  H01L2224/04105 ,  H01L2224/18 ,  H01L2224/19 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/9222 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2924/12041 ,  H01L2924/18162 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2224/83

Abstract: A light emitting device includes a wavelength conversion layer, at least one light emitting unit and a reflective protecting element. The wavelength conversion layer has an upper surface and a lower surface opposite to each other. The light emitting unit has two electrode pads located on the same side of the light emitting unit. The light emitting unit is disposed on the upper surface of the wavelength conversion layer and exposes the two electrode pads. The reflective protecting element encapsulates at least a portion of the light emitting unit and a portion of the wavelength conversion layer, and exposes the two electrode pads of the light emitting unit.

公开(公告)号：US20180090639A1

公开(公告)日：2018-03-29

申请号：US15680227

申请日：2017-08-18

Applicant: Genesis Photonics Inc.

Inventor： Shao-Ying Ting ,  Yan-Ting Lan ,  Jing-En Huang ,  Yi-Ru Huang

IPC: H01L33/08 ,  H01L33/38 ,  H01L33/20 ,  H01L33/44 ,  H01L33/00 ,  H01L25/075

CPC classification number: H01L33/08 ,  H01L25/0753 ,  H01L27/15 ,  H01L27/153 ,  H01L27/156 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/20 ,  H01L33/382 ,  H01L33/385 ,  H01L33/44 ,  H01L33/62 ,  H01L2933/0016

Abstract: A μLED including an epitaxial stacked layer, a first electrode and a second electrode is provided. The epitaxial stacked layer includes a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer. The epitaxial stacked layer has a first mesa portion and a second mesa portion to form a first type conductive region and a second type conductive region respectively. The first electrode is disposed on the first mesa portion. The second electrode is disposed on the second mesa portion. The second electrode contacts the first type doped semiconductor layer, the light emitting layer and the second type doped semiconductor layer located at the second mesa portion. Moreover, a manufacturing method of the μLED is also provided.

公开(公告)号：US09882096B2

公开(公告)日：2018-01-30

申请号：US15073715

申请日：2016-03-18

Applicant: Genesis Photonics Inc.

Inventor： Cheng-Wei Hung ,  Yu-Feng Lin

IPC: H01L33/38 ,  H01L33/50 ,  H01L33/56 ,  H01L33/40 ,  H01L33/00 ,  H01L27/15 ,  H01L33/52

CPC classification number: H01L33/502 ,  H01L27/156 ,  H01L33/0095 ,  H01L33/382 ,  H01L33/385 ,  H01L33/40 ,  H01L33/50 ,  H01L33/505 ,  H01L33/52 ,  H01L33/56 ,  H01L2933/0016 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0066

Abstract: An edge lighting light emitting diode (LED) structure and a method of manufacturing the same are provided. The edge lighting LED structure includes a substrate, an electrode pattern, a chip, an encapsulation layer and a fluorescent layer. The electrode pattern at least includes two first conducting portions separately disposed on an upper surface of the substrate, two second conducting portions separately disposed on a lower surface of the substrate, and two conducting holes separately vertically penetrating through the substrate, each conducting hole connects a first conducting portion and a second conducting portion, and the conducting holes are exposed on a lateral surface of the substrate. A second surface of the chip is disposed on the first conducting portions. A top surface of the encapsulation layer exposes and is aligned with the first surface of the chip. The fluorescent layer covers a first surface of the chip.

公开(公告)号：US20180019232A1

公开(公告)日：2018-01-18

申请号：US15715138

申请日：2017-09-25

Applicant: Genesis Photonics Inc.

Inventor： Yi-Ru Huang ,  Tung-Lin Chuang ,  Chih-Ming Shen ,  Sheng-Tsung Hsu ,  Kuan-Chieh Huang ,  Jing-En Huang

IPC: H01L25/075 ,  H01L33/10 ,  H01L33/20 ,  H01L33/38 ,  H01L33/40 ,  H01L33/46 ,  H01L33/50 ,  H01L33/52 ,  H01L33/56 ,  H01L33/62 ,  H01L33/58 ,  H01L33/42 ,  H01L33/54 ,  H01L33/00

CPC classification number: H01L25/0753 ,  H01L33/0095 ,  H01L33/10 ,  H01L33/20 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L33/507 ,  H01L33/52 ,  H01L33/54 ,  H01L33/56 ,  H01L33/58 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/005 ,  H01L2933/0058 ,  H01L2924/00014

Abstract: A light emitting component includes an epitaxial structure, an adhesive layer, a first reflective layer, a second reflective layer, a block layer, a first electrode and a second electrode. The epitaxial structure includes a substrate, a first semiconductor layer, a light emitting layer and a second semiconductor layer. The adhesive layer is disposed on the second semiconductor layer of the epitaxial structure. The first reflective layer is disposed on the adhesive layer. The second reflective layer is disposed on the first reflective layer and extended onto the adhesive layer. A projection area of the second reflective layer is larger than a projection area of the first reflective layer. The block layer is disposed on the second reflective layer. The first electrode is electrically connected to the first semiconductor layer. The second electrode is electrically connected to the second semiconductor layer.