公开(公告)号：US5956362A

公开(公告)日：1999-09-21

申请号：US806929

申请日：1997-02-26

申请人： Toshiya Yokogawa ,  Shigeo Yoshii

发明人： Toshiya Yokogawa ,  Shigeo Yoshii

IPC分类号： H01S5/026 ,  H01S5/183 ,  H01S5/347 ,  H01S5/42 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/18341 ,  H01S5/0207 ,  H01S5/0264 ,  H01S5/18305 ,  H01S5/18308 ,  H01S5/18369 ,  H01S5/347 ,  H01S5/423

摘要： A vertical cavity type semiconductor light emitting device includes: a light emitting layer made of a II-IV group compound semiconductor material; a first II-VI group compound semiconductor layer which has an opening at a position corresponding to the inside of the light emitting layer; and an upper mirror and a lower mirror which are provided so as to interpose the light emitting layer therebetween. A current is injected through the opening into the light emitting layer.

摘要翻译： 一种垂直腔型半导体发光器件包括：由II-IV族化合物半导体材料制成的发光层; 第一II-VI族化合物半导体层，其在对应于发光层内部的位置处具有开口; 以及设置成将发光层插入其间的上镜和下镜。 电流通过开口注入发光层。

公开(公告)号：US4866489A

公开(公告)日：1989-09-12

申请号：US076549

申请日：1987-07-22

申请人： Toshiya Yokogawa ,  Mototsugu Ogura

发明人： Toshiya Yokogawa ,  Mototsugu Ogura

IPC分类号： G02F1/017 ,  G02F1/355 ,  G02F1/37 ,  H01L27/146 ,  H01S5/02 ,  H01S5/026 ,  H01S5/20 ,  H01S5/32 ,  H01S5/34 ,  H01S5/347

CPC分类号： B82Y20/00 ,  G02F1/3556 ,  H01L27/14665 ,  H01S5/026 ,  H01S5/347 ,  G02F1/37 ,  G02F2001/01766 ,  H01S2301/173 ,  H01S5/021 ,  H01S5/0218 ,  H01S5/2004 ,  H01S5/3201 ,  H01S5/3406 ,  H01S5/3409

摘要： A semiconductor device in which a strained-layer of super-lattice composed of two or more group II-IV semiconductors grown on an epitaxial growth layer formed on a surface of a semiconductor substrate. Since the strained-layer of super-lattice composed of two or more group II-VI semiconductors is present in the heterojunction of the heterostructure, it is possible to form a favorable heterostructure seminconductor layer, inhibiting the adverse effects of lattice mismatch.

摘要翻译： 一种半导体器件，其中在形成在半导体衬底的表面上的外延生长层上生长的由两个或更多个II-IV族半导体组成的超晶格的应变层。 由于由两个以上的II-VI族II族半导体构成的超晶格的应变层存在于异质结构的异质结中，因此可以形成有利的异质结晶半导体层，抑制晶格失配的不利影响。

公开(公告)号：US08822000B2

公开(公告)日：2014-09-02

申请号：US12520959

申请日：2008-01-16

申请人： Hironori Kumagai ,  Yasuhiro Hashimoto ,  Shigeo Hayashi ,  Takuma Asari ,  Toshiya Yokogawa

发明人： Hironori Kumagai ,  Yasuhiro Hashimoto ,  Shigeo Hayashi ,  Takuma Asari ,  Toshiya Yokogawa

IPC分类号： H01M4/583 ,  H01M10/04 ,  B05D3/00 ,  B01J35/00 ,  B01J23/745 ,  B01J37/02 ,  B82Y30/00 ,  C25D11/02 ,  C25D11/04 ,  B01J23/89

CPC分类号： C25D11/02 ,  B01J23/745 ,  B01J23/8906 ,  B01J35/006 ,  B01J37/0226 ,  B01J37/0244 ,  B82Y30/00 ,  C25D11/04 ,  C25D11/045 ,  Y10T29/417 ,  Y10T29/49108 ,  Y10T29/49115 ,  Y10T428/1352 ,  Y10T428/2462

摘要： The present invention provides a nanostructure on an upper surface of which a small-diameter carbon nanotube (CNT) is formed and which improves an adhesive strength between a substrate and the CNT while controlling an orientation of the CNT, and a method for manufacturing the nanostructure. The nanostructure includes a substrate 101, a porous layer 102 formed on the substrate 101 to have a fine pore, a fine pore diameter control layer 103 formed on the porous layer 102, and a carbon nanotube 701 formed to extend from the fine pore defined by the fine pore diameter control layer 103, and one end of the carbon nanotube is fixed by the fine pore diameter control layer 103. It is preferable that the substrate 101 and the fine pore diameter control layer 103 be electrically conductive. It is preferable that the porous layer 102 be an anode oxide film. It is preferable that a melting point of the fine pore diameter control layer 103 be 600° C. or higher.

摘要翻译： 本发明提供了在上表面上形成小直径碳纳米管（CNT）的纳米结构，并且在控制CNT的取向的同时改善了基板和CNT之间的粘合强度，以及纳米结构的制造方法 。 纳米结构包括基板101，形成在基板101上的具有细孔的多孔层102，形成在多孔层102上的细孔径控制层103和形成为从由多孔层102限定的细孔延伸的细孔 微细孔径控制层103和碳纳米管的一端由细孔直径控制层103固定。优选的是，基板101和细孔直径控制层103是导电的。 多孔层102优选为阳极氧化膜。 优选细孔径控制层103的熔点为600℃以上。

公开(公告)号：US08546167B2

公开(公告)日：2013-10-01

申请号：US13405725

申请日：2012-02-27

申请人： Ryou Kato ,  Shunji Yoshida ,  Toshiya Yokogawa

发明人： Ryou Kato ,  Shunji Yoshida ,  Toshiya Yokogawa

IPC分类号： H01L21/00

CPC分类号： H01L21/0262 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L33/007 ,  H01L33/06 ,  H01L33/18 ,  H01L33/325

摘要： A nitride-based semiconductor light-emitting element includes an n-GaN layer 102, a p-GaN layer 107, and a GaN/InGaN multi-quantum well active layer 105, which is interposed between the n- and p-GaN layers 102 and 107. The GaN/InGaN multi-quantum well active layer 105 is an m-plane semiconductor layer, which includes an InxGa1-xN (where 0

摘要翻译： 氮化物系半导体发光元件包括n-GaN层102，p-GaN层107和GaN / InGaN多量子阱有源层105，其夹在n-p + GaN层102之间 GaN / InGaN多量子阱有源层105是m面半导体层，其包括厚度为6nm以上的In x Ga 1-x N（其中0

公开(公告)号：US08124986B2

公开(公告)日：2012-02-28

申请号：US13124162

申请日：2010-09-21

申请人： Naomi Anzue ,  Toshiya Yokogawa

发明人： Naomi Anzue ,  Toshiya Yokogawa

IPC分类号： H01L33/36

CPC分类号： H01L29/452 ,  H01L21/28575 ,  H01L24/14 ,  H01L29/045 ,  H01L29/2003 ,  H01L33/16 ,  H01L33/32 ,  H01L33/40 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012

摘要： A nitride-based semiconductor device includes: a nitride-based semiconductor multilayer structure including a p-type semiconductor region, a surface of the p-type semiconductor region being an m-plane; and an electrode that is arranged on the p-type semiconductor region, wherein the p-type semiconductor region is made of an AlxGayInzN semiconductor (where x+y+z=1, x≧0, y≧0, and z≧0), and the electrode contains Mg, Zn and Ag.

摘要翻译： 氮化物类半导体器件包括：包含p型半导体区域的氮化物基半导体多层结构，p型半导体区域的表面是m面; 和配置在p型半导体区域上的电极，其中p型半导体区域由Al x Ga y In z N半导体（其中x + y + z = 1，x≥0，y≥0，z≥0） ，电极含有Mg，Zn和Ag。

公开(公告)号：US07816696B2

公开(公告)日：2010-10-19

申请号：US11908430

申请日：2006-03-09

申请人： Yoshiaki Hasegawa ,  Gaku Sugahara ,  Naomi Anzue ,  Akihiko Ishibashi ,  Toshiya Yokogawa

发明人： Yoshiaki Hasegawa ,  Gaku Sugahara ,  Naomi Anzue ,  Akihiko Ishibashi ,  Toshiya Yokogawa

IPC分类号： H01L29/267 ,  H01L21/332

CPC分类号： H01S5/32341 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/452 ,  H01L29/861 ,  H01L33/20 ,  H01L33/382 ,  H01L33/40 ,  H01S5/0207 ,  H01S5/0421 ,  H01S5/0425 ,  H01S2301/173

摘要： An nitride semiconductor device according to the present invention is a nitride semiconductor device including: an n-GaN substrate 10; a semiconductor multilayer structure 100 formed on a principal face of the n-GaN substrate 10, the semiconductor multilayer structure 100 including a p-type region and an n-type region; a p-side electrode 32 which is in contact with a portion of the p-type region included in the semiconductor multilayer structure 100; and an n-side electrode 34 provided on the rear face of the n-GaN substrate 10. The rear face of the n-GaN substrate includes a nitrogen surface, such that a carbon concentration at an interface between the rear face and the n-side electrode 34 is adjusted to 5 atom % or less.

摘要翻译： 根据本发明的氮化物半导体器件是氮化物半导体器件，其包括：n-GaN衬底10; 形成在n-GaN衬底10的主面上的半导体多层结构100，包括p型区和n型区的半导体层叠结构100; p侧电极32，其与包含在半导体多层结构体100中的p型区域的一部分接触; 以及设置在n-GaN衬底10的背面上的n侧电极34.n-GaN衬底的背面包括氮表面，使得在背面和n- 侧电极34被调整为5原子％以下。

公开(公告)号：US07704860B2

公开(公告)日：2010-04-27

申请号：US10597575

申请日：2005-11-15

申请人： Toshitaka Shimamoto ,  Yasutoshi Kawaguchi ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Isao Kidoguchi ,  Toshiya Yokogawa

发明人： Toshitaka Shimamoto ,  Yasutoshi Kawaguchi ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Isao Kidoguchi ,  Toshiya Yokogawa

IPC分类号： H01L21/20

CPC分类号： H01S5/22 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01S5/32341 ,  H01S2304/12

摘要： A nitride-based semiconductor device according to the present invention includes a semiconductor multilayer structure supported on a substrate structure 101 with electrical conductivity. The principal surface of the substrate structure 101 has at least one vertical growth region, which functions as a seed crystal for growing a nitride-based semiconductor vertically, and a plurality of lateral growth regions for allowing the nitride-based semiconductor that has grown on the vertical growth region to grow laterally. The sum ΣX of the respective sizes of the vertical growth regions as measured in the direction pointed by the arrow A and the sum ΣY of the respective sizes of the lateral growth regions as measured in the same direction satisfy the inequality ΣX/ΣY>1.0.

摘要翻译： 根据本发明的氮化物基半导体器件包括支撑在具有导电性的衬底结构101上的半导体多层结构。 衬底结构101的主表面具有至少一个垂直生长区，其起垂直生长氮化物基半导体的晶种的作用，以及用于允许在其上生长的氮化物基半导体的多个横向生长区 垂直生长区域横向生长。 在箭头A所示的方向上测量的垂直生长区域的各自尺寸的总和＆Sgr X以及在相同方向上测量的横向生长区域的各自尺寸的总和＆Sgr; Y满足不等式＆lt; Sgr; X /＆S; Y> 1.0。

公开(公告)号：US20080272462A1

公开(公告)日：2008-11-06

申请号：US10597575

申请日：2005-11-15

申请人： Toshitaka Shimamoto ,  Yasutoshi Kawaguchi ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Isao Kidoguchi ,  Toshiya Yokogawa

发明人： Toshitaka Shimamoto ,  Yasutoshi Kawaguchi ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Isao Kidoguchi ,  Toshiya Yokogawa

IPC分类号： H01L21/20 ,  H01L29/201

CPC分类号： H01S5/22 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01S5/32341 ,  H01S2304/12

摘要： A nitride-based semiconductor device according to the present invention includes a semiconductor multilayer structure supported on a substrate structure 101 with electrical conductivity. The principal surface of the substrate structure 101 has at least one vertical growth region, which functions as a seed crystal for growing a nitride-based semiconductor vertically, and a plurality of lateral growth regions for allowing the nitride-based semiconductor that has grown on the vertical growth region to grow laterally. The sum ΣX of the respective sizes of the vertical growth regions as measured in the direction pointed by the arrow A and the sum ΣY of the respective sizes of the lateral growth regions as measured in the same direction satisfy the inequality ΣX/ΣY>1.0.

摘要翻译： 根据本发明的氮化物基半导体器件包括支撑在具有导电性的衬底结构101上的半导体多层结构。 衬底结构101的主表面具有至少一个垂直生长区，其起垂直生长氮化物基半导体的晶种的作用，以及用于允许在其上生长的氮化物基半导体的多个横向生长区 垂直生长区域横向生长。 在箭头A所指的方向上测量的垂直生长区域的各自尺寸的大小和在相同方向上测量的横向生长区域的各自尺寸的总和SigmaY的和ΣX满足SigmaX / SigmaY> 1.0的不等式。

公开(公告)号：US07338827B2

公开(公告)日：2008-03-04

申请号：US10547968

申请日：2004-03-09

申请人： Gaku Sugahara ,  Yasutoshi Kawaguchi ,  Akihiko Ishibashi ,  Isao Kidoguchi ,  Toshiya Yokogawa

发明人： Gaku Sugahara ,  Yasutoshi Kawaguchi ,  Akihiko Ishibashi ,  Isao Kidoguchi ,  Toshiya Yokogawa

IPC分类号： H01L21/00

CPC分类号： H01S5/227 ,  H01S5/0202 ,  H01S5/0421 ,  H01S5/2205 ,  H01S5/32341

摘要： A method for fabricating nitride semiconductor devices according to the present invention includes the steps of: (A) providing a nitride semiconductor substrate, which will be split into chip substrates, which includes device portions that will function as the respective chip substrates when the substrate is split and interdevice portions that connect the device portions together, and in which the average thickness of the interdevice portions is smaller than the thickness of the device portions; (B) defining a masking layer, which has striped openings over the device portions, on the upper surface of the nitride semiconductor substrate; (C) selectively growing nitride semiconductor layers on portions of the upper surface of the nitride semiconductor substrate, which are exposed through the openings of the masking layer; and (D) cleaving the nitride semiconductor substrate along the interdevice portions of the nitride semiconductor substrate, thereby forming nitride semiconductor devices on the respectively split chip substrates.

摘要翻译： 根据本发明的制造氮化物半导体器件的方法包括以下步骤：（A）提供将被分成芯片衬底的氮化物半导体衬底，其包括当衬底为基底时用作各个芯片衬底的器件部分 将装置部分连接在一起的分割和互连部分，并且其中，所述装置间部分的平均厚度小于所述装置部分的厚度; （B）在氮化物半导体衬底的上表面上限定在器件部分上具有条纹开口的掩模层; （C）在氮化物半导体衬底的上表面的通过掩模层的开口露出的部分上选择性地生长氮化物半导体层; 以及（D）沿着氮化物半导体衬底的间隙部分切割氮化物半导体衬底，从而在分别的芯片衬底上形成氮化物半导体器件。

公开(公告)号：US20070217460A1

公开(公告)日：2007-09-20

申请号：US11568336

申请日：2005-04-20

申请人： Akihiko Ishibashi ,  Toshiya Yokogawa ,  Toshitaka Shimamoto ,  Yoshiaki Hasegawa ,  Yasutoshi Kawaguchi ,  Isao Kidoguchi

发明人： Akihiko Ishibashi ,  Toshiya Yokogawa ,  Toshitaka Shimamoto ,  Yoshiaki Hasegawa ,  Yasutoshi Kawaguchi ,  Isao Kidoguchi

IPC分类号： H01S5/30 ,  H01L21/20

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/0265 ,  H01L33/0075 ,  H01S5/2201 ,  H01S5/305 ,  H01S5/3216 ,  H01S2301/173 ,  H01S2304/04 ,  H01S2304/12

摘要： A process for producing a nitride semiconductor according to the present invention includes: step (A) of provided an n-GaN substrate 101; step (B) of forming on the substrate 101 a plurality of stripe ridges having upper faces which are parallel to a principal face of the substrate 101; step (C) of selectively growing AlxGayInzN crystals (0≦x, y, z≦1: x+y+z=1) 104 on the upper faces of the plurality of stripe ridges, the AlxGayInzN crystals containing an n-type impurity at a first concentration; and step (D) of growing an Alx′Gay′Inz′N crystal (0≦x′, y′, z′≦1: x′+y′+z′=1) 106 on the AlxGayInzN crystals 104, the Alx′Gay′Inz′N crystal 106 containing an n-type impurity at a second concentration which is lower than the first concentration, and linking every two adjoining AlxGayInzN crystals 104 with the Alx′Gay′Inz′N crystal 106 to form one nitride semiconductor layer 120.

摘要翻译： 根据本发明的制造氮化物半导体的方法包括：提供n-GaN衬底101的步骤（A）; 在基板101上形成具有平行于基板101的主面的上表面的多个条纹脊的步骤（B）; 选择性地生长Al x N晶体的步骤（C）（0≤x，y，z <= 1：x + y + z = 1）104，在多个条纹脊的上表面上，含有N，N，N， 第一浓度的n型杂质; 和步骤（D），生长Al 2 O 3 / （0 <= x'，y'，z'<= 1：x'）。 + y'+ z'= 1）106在Al x N y晶体104中，Al x x < 包含低于第一浓度的第二浓度的n型杂质，并且连接每两个相邻的Al x x的子晶体106 在具有Al x Si 2 O 3的N z晶体104中，Ga 3+ 在＆lt; SUB＆gt;＆lt; SUB＆gt;＆lt; / SUB＆gt;＆lt;＆lt;＆lt; 形成一个氮化物半导体层120。