公开(公告)号：US07344996B1

公开(公告)日：2008-03-18

申请号：US11159834

申请日：2005-06-22

Applicant: Chi-I Lang ,  Wenxian Zhu ,  Ratsamee Limdulpaiboon ,  Judy H. Huang

Inventor： Chi-I Lang ,  Wenxian Zhu ,  Ratsamee Limdulpaiboon ,  Judy H. Huang

IPC: H01L21/302 ,  H01L21/461

CPC classification number: H01L21/76837 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/31608

Abstract: Plasma etch processes incorporating helium-based etch chemistries can remove dielectric a semiconductor applications. In particular, high density plasma chemical vapor etch-enhanced (deposition-etch-deposition) gap fill processes incorporating etch chemistries which incorporate helium as the etchant that can effectively fill high aspect ratio gaps while reducing or eliminating dielectric contamination by etchant chemical species.

Abstract translation: 掺入氦基蚀刻化学品的等离子体蚀刻工艺可以消除半导体应用的电介质。 特别地，高密度等离子体化学气相蚀刻增强（沉积 - 蚀刻 - 沉积）间隙填充工艺，其结合了氦气作为蚀刻剂的蚀刻化学物质，其可以有效地填充高纵横比间隙，同时减少或消除蚀刻剂化学物质的电介质污染。

公开(公告)号：US20060246737A1

公开(公告)日：2006-11-02

申请号：US11426141

申请日：2006-06-23

Applicant: Kang Yim ,  Melissa Tam ,  Dian Sugiarto ,  Chi-I Lang ,  Peter Lee ,  Li-Qun Xia

Inventor： Kang Yim ,  Melissa Tam ,  Dian Sugiarto ,  Chi-I Lang ,  Peter Lee ,  Li-Qun Xia

IPC: H01L21/31

CPC classification number: H01L21/76834 ,  C23C16/30 ,  C23C16/325 ,  C23C16/401 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/3185 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832

Abstract: Methods are provided for depositing a silicon carbide layer having significantly reduced current leakage. The silicon carbide layer may be a barrier layer or part of a barrier bilayer that also includes a barrier layer. Methods for depositing oxygen-doped silicon carbide barrier layers are also provided. The silicon carbide layer may be deposited by reacting a gas mixture comprising an organosilicon compound, an aliphatic hydrocarbon comprising a carbon-carbon double bond or a carbon-carbon triple bond, and optionally, helium in a plasma. Alternatively, the silicon carbide layer may be deposited by reacting a gas mixture comprising hydrogen or argon and an organosilicon compound in a plasma.

Abstract translation: 提供了用于沉积具有显着降低的电流泄漏的碳化硅层的方法。 碳化硅层可以是还包括阻挡层的阻挡层或阻挡层双层的一部分。 还提供了沉积氧掺杂的碳化硅阻挡层的方法。 可以通过使包含有机硅化合物，包含碳 - 碳双键或碳 - 碳三键的脂族烃和任选地在等离子体中的氦气的气体混合物反应来沉积碳化硅层。 或者，可以通过在等离子体中使包含氢或氩的气体混合物和有机硅化合物反应来沉积碳化硅层。

公开(公告)号：US06943127B2

公开(公告)日：2005-09-13

申请号：US10302240

申请日：2002-11-22

Applicant: Seon-Mee Cho ,  Peter Wai-Man Lee ,  Chi-I Lang ,  Dian Sugiarto ,  Chen-An Chen ,  Li-Qun Xia ,  Shankar Venkataraman ,  Ellie Yieh

Inventor： Seon-Mee Cho ,  Peter Wai-Man Lee ,  Chi-I Lang ,  Dian Sugiarto ,  Chen-An Chen ,  Li-Qun Xia ,  Shankar Venkataraman ,  Ellie Yieh

IPC: C23C16/30 ,  H01L21/316 ,  H01L21/42

CPC classification number: H01L21/02126 ,  C23C16/30 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31633 ,  Y10S438/931 ,  Y10T428/31909

Abstract: A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas while applying RF power. The carbon content of the deposited film is between about 10 and about 30 atomic percent excluding hydrogen atoms, and is preferably between about 10 and about 20 atomic percent excluding hydrogen atoms.

Abstract translation: 提供了具有约3.0或更小，优选约2.5或更小的硅 - 碳键和介电常数的低介电常数膜。 通过使环状有机硅化合物和脂族有机硅化合物与氧化气体反应同时施加RF功率来沉积低介电常数膜。 沉积膜的碳含量除氢原子以外约为10至约30原子百分比，优选除氢原子之外约10至约20原子％。

公开(公告)号：US06709715B1

公开(公告)日：2004-03-23

申请号：US09336368

申请日：1999-06-17

Applicant: Chi-I Lang ,  Shin-Puu Jeng ,  Yeming Jim Ma ,  Fong Chang ,  Peter Wai-Man Lee ,  David W. Cheung

Inventor： Chi-I Lang ,  Shin-Puu Jeng ,  Yeming Jim Ma ,  Fong Chang ,  Peter Wai-Man Lee ,  David W. Cheung

IPC: H05H146

CPC classification number: H01L21/3122 ,  B05D1/62 ,  C08G61/025 ,  C08G61/12 ,  C08G2261/3424 ,  C09D4/00 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32522 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/76801 ,  H01L21/76807 ,  C08G77/00

Abstract: A method and apparatus for depositing a low dielectric constant film by plasma assisted copolymerization of p-xylylene and a comonomer having carbon-carbon double bonds at a constant RF power level from about 0W to about 100W or a pulsed RF power level from about 20W to about 160W. The copolymer film has a dielectric constant from about 2.2 to about 2.5. Preferred comonomers include tetravinyltetramethylcyclotetrasiloxane, tetraallyloxysilane, and trivinylmethylsilane. The copolymer films include at least 1% by weight of the comonomer.

Abstract translation: 一种用于通过等离子体辅助共聚对苯二甲烯和具有碳 - 碳双键的共聚单体在约0W至约100W的恒定RF功率水平或约20W至约20W的脉冲RF功率水平沉积低介电常数薄膜的方法和装置 约160W。 共聚物膜的介电常数为约2.2至约2.5。 优选的共聚单体包括四乙烯基四甲基环四硅氧烷，四烯丙氧基硅烷和三乙烯基甲基硅烷。 共聚物膜包括至少1重量％的共聚单体。

公开(公告)号：US06413583B1

公开(公告)日：2002-07-02

申请号：US09338470

申请日：1999-06-22

Applicant: Farhad K. Moghadam ,  David W. Cheung ,  Ellie Yieh ,  Li-Qun Xia ,  Wai-Fan Yau ,  Chi-I Lang ,  Shin-Puu Jeng ,  Frederic Gaillard ,  Shankar Venkataraman ,  Srinivas Nemani

Inventor： Farhad K. Moghadam ,  David W. Cheung ,  Ellie Yieh ,  Li-Qun Xia ,  Wai-Fan Yau ,  Chi-I Lang ,  Shin-Puu Jeng ,  Frederic Gaillard ,  Shankar Venkataraman ,  Srinivas Nemani

IPC: C23C1640

CPC classification number: H01L21/02126 ,  C23C16/401 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31053 ,  H01L21/3122 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/76828 ,  H01L21/76834

Abstract: A method for depositing silicon oxide layers having a low dielectric constant by reaction of an organosilicon compound and a hydroxyl forming compound at a substrate temperature less than about 400° C. The low dielectric constant films contain residual carbon and are useful for gap fill layers, pre-metal dielectric layers, inter-metal dielectric layers, and shallow trench isolation dielectric layers in sub-micron devices. The hydroxyl compound can be prepared prior to deposition from water or an organic compound. The silicon oxide layers are preferably deposited at a substrate temperature less than about 40° C. onto a liner layer produced from the organosilicon compound to provide gap fill layers having a dielectric constant less than about 3.0.

Abstract translation: 一种通过在低于约400℃的衬底温度下通过有机硅化合物和羟基形成化合物的反应沉积低介电常数的氧化硅层的方法。低介电常数膜含有残余碳并可用于间隙填充层， 预金属介电层，金属间介电层和亚微米器件中的浅沟槽隔离电介质层。 羟基化合物可以在从水或有机化合物沉积之前制备。 氧化硅层优选在低于约40℃的衬底温度下沉积到由有机硅化合物制备的衬里层上，以提供介电常数小于约3.0的间隙填充层。

公开(公告)号：US6107184A

公开(公告)日：2000-08-22

申请号：US207791

申请日：1998-12-09

Applicant: Robert P. Mandal ,  David Cheung ,  Peter Wai-Man Lee ,  Chi-I Lang

Inventor： Robert P. Mandal ,  David Cheung ,  Peter Wai-Man Lee ,  Chi-I Lang

IPC: B05D7/24 ,  C08G61/02 ,  H01L21/283 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L21/4763

CPC classification number: B05D1/60 ,  C08G61/025 ,  H01L21/312 ,  C08G2261/3424 ,  H01L21/31695 ,  Y10S438/958

Abstract: A method and apparatus for forming thin copolymer layers having low dielectric constants on semiconductor substrates includes in situ formation of p-xylylenes, or derivatives thereof, from solid or liquid precursors such as cyclic p-xylylene dimer, p-xylene, 1,4-bis(formatomethyl)benzene, or 1,4-bis(N-methyl-aminomethyl)benzene. P-xylylene is copolymerized with a comonomer having labile groups that are converted to dispersed gas bubbles after the copolymer layer is deposited on the substrate. Preferred comonomers comprise diazocyclopentadienyl, diazoquinoyl, formyloxy, or glyoxyloyloxy groups.

Abstract translation: 用于在半导体衬底上形成具有低介电常数的薄共聚物层的方法和装置包括从固体或液体前体如环状对二甲苯二聚物，对二甲苯，1,4-二甲苯二异氰酸酯原位形成对二甲苯或其衍生物， 双（格式甲基）苯或1,4-双（N-甲基 - 氨基甲基）苯。 在共聚物层沉积在基材上之后，将对二甲苯与具有不稳定基团的共聚单体共聚，转化成分散的气泡。 优选的共聚单体包括重氮环戊二烯基，重氮醌基，甲酰氧基或乙酰氧基合氧基。

公开(公告)号：US08920618B2

公开(公告)日：2014-12-30

申请号：US13339648

申请日：2011-12-29

Applicant: Hong Sheng Yang ,  Zhendong Hong ,  Chi-I Lang

Inventor： Hong Sheng Yang ,  Zhendong Hong ,  Chi-I Lang

IPC: C23C14/54

CPC classification number: C23C14/044 ,  C23C14/3464

Abstract: Apparatuses and methods for high-deposition-rate sputtering for depositing layers onto a substrate are disclosed. The apparatuses generally comprise a process chamber; one or more sputtering sources disposed within the process chamber, wherein each sputtering source comprises a sputtering target; a substrate support disposed within the process chamber; a shield positioned between the sputtering sources and the substrate, the shield comprising an aperture positioned under each sputtering source; and a transport system connected to the substrate support capable of positioning the substrate such that one of a plurality of site-isolated regions on the substrate can be exposed to sputtered material through the aperture positioned under each of the sputtering sources; wherein the spacing between the sputtering target and the substrate is less than 100 mm. The apparatus enables high deposition rate sputtering onto site-isolated regions on the substrate.

Abstract translation: 公开了用于将沉积层沉积到基底上的高沉积速率溅射的装置和方法。 设备通常包括处理室; 设置在处理室内的一个或多个溅射源，其中每个溅射源包括溅射靶; 设置在所述处理室内的衬底支撑件; 位于所述溅射源和所述衬底之间的屏蔽罩，所述屏蔽件包括位于每个溅射源下方的孔; 以及连接到所述基板支撑件的输送系统，其能够定位所述基板，使得所述基板上的多个位置隔离区域中的一个可以通过位于每个所述溅射源下方的所述孔暴露于溅射材料; 其中溅射靶和衬底之间的间距小于100mm。 该装置能够在衬底上的位置分离区域上实现高沉积速率溅射。

公开(公告)号：US08728879B2

公开(公告)日：2014-05-20

申请号：US13547856

申请日：2012-07-12

Applicant: Bob Kong ,  Tony Chiang ,  Chi-I Lang ,  Zhi-Wen Wen Sun ,  Jinhong Tong

Inventor： Bob Kong ,  Tony Chiang ,  Chi-I Lang ,  Zhi-Wen Wen Sun ,  Jinhong Tong

IPC: H01L21/20

CPC classification number: H01L21/02068 ,  C23C18/1651 ,  C23C18/54 ,  H01L21/288 ,  H01L21/76852 ,  H01L21/76874

Abstract: Embodiments of the current invention describe methods of processing a semiconductor substrate that include applying a zincating solution to the semiconductor substrate to form a zinc passivation layer on the titanium-containing layer, the zincating solution comprising a zinc salt, FeCl3, and a pH adjuster.

公开(公告)号：US08580584B2

公开(公告)日：2013-11-12

申请号：US13624102

申请日：2012-09-21

Applicant: Yun Wang ,  Tony P. Chiang ,  Chi-I Lang

Inventor： Yun Wang ,  Tony P. Chiang ,  Chi-I Lang

IPC: H01L21/00

CPC classification number: H01L51/0031 ,  H01L51/56

Abstract: A system and method of increasing productivity of OLED material screening includes providing a substrate that includes an organic semiconductor, processing regions on the substrate by combinatorially varying parameters associated with the OLED device production on the substrate, performing a first characterization test on the processed regions on the substrate to generate first results, processing regions on the substrate in a combinatorial manner by varying parameters associated with the OLED device production on the substrate based on the first results of the first characterization test, performing a second characterization test on the processed regions on the substrate to generate second results, and determining whether the substrate meets a predetermined quality threshold based on the second results.

Abstract translation: 提高OLED材料筛选的生产率的系统和方法包括提供包括有机半导体的衬底，通过组合地改变与衬底上的OLED器件生产相关的参数来在衬底上处理区域，对处理的区域进行第一表征测试 所述衬底产生第一结果，基于所述第一表征测试的第一结果，通过改变与所述衬底上的OLED器件生产相关联的参数，以组合方式处理所述衬底上的区域，对所述衬底上的所述处理区域进行第二特性测试 衬底以产生第二结果，以及基于第二结果确定衬底是否满足预定质量阈值。

公开(公告)号：US20130167773A1

公开(公告)日：2013-07-04

申请号：US13339648

申请日：2011-12-29

Applicant: Hong Sheng Yang ,  Zhendong Hong ,  Chi-I Lang

Inventor： Hong Sheng Yang ,  Zhendong Hong ,  Chi-I Lang

IPC: C23C14/34

CPC classification number: C23C14/044 ,  C23C14/3464

Abstract: Apparatuses and methods for high-deposition-rate sputtering for depositing layers onto a substrate are disclosed. The apparatuses generally comprise a process chamber; one or more sputtering sources disposed within the process chamber, wherein each sputtering source comprises a sputtering target; a substrate support disposed within the process chamber; a shield positioned between the sputtering sources and the substrate, the shield comprising an aperture positioned under each sputtering source; and a transport system connected to the substrate support capable of positioning the substrate such that one of a plurality of site-isolated regions on the substrate can be exposed to sputtered material through the aperture positioned under each of the sputtering sources; wherein the spacing between the sputtering target and the substrate is less than 100 mm. The apparatus enables high deposition rate sputtering onto site-isolated regions on the substrate.

Abstract translation: 公开了用于将沉积层沉积到基底上的高沉积速率溅射的装置和方法。 设备通常包括处理室; 设置在处理室内的一个或多个溅射源，其中每个溅射源包括溅射靶; 设置在所述处理室内的衬底支撑件; 位于所述溅射源和所述衬底之间的屏蔽罩，所述屏蔽件包括位于每个溅射源下方的孔; 以及连接到所述基板支撑件的输送系统，其能够定位所述基板，使得所述基板上的多个位置隔离区域中的一个可以通过位于每个所述溅射源下方的所述孔暴露于溅射材料; 其中溅射靶和衬底之间的间距小于100mm。 该装置能够在衬底上的位置分离区域上实现高沉积速率溅射。