公开(公告)号：US09857027B2

公开(公告)日：2018-01-02

申请号：US14476215

申请日：2014-09-03

Applicant: APPLIED MATERIALS, INC.

Inventor： Martin Jeff Salinas ,  Youqun Dong ,  David Thompson ,  Mei Chang

IPC: C23C16/44 ,  G05D9/12 ,  F24F6/02 ,  F17C6/00 ,  C23C16/448 ,  G05D9/02

CPC classification number: F17C6/00 ,  C23C16/4481 ,  F24F6/025 ,  G05D9/02 ,  G05D9/12 ,  Y10T137/6416 ,  Y10T137/7306

Abstract: Methods and apparatus for chemical delivery are provided herein. In some embodiments, a first reservoir holds a first volume of fluid, receives a carrier gas, and outputs the carrier gas together with vapor derived from the first volume of fluid. A second reservoir holds a second volume of fluid and is capable of delivering a part of the second volume of fluid to the first reservoir. A self-regulating tube extends from the first reservoir to a region above the second volume of fluid in the second reservoir.

公开(公告)号：US09799533B2

公开(公告)日：2017-10-24

申请号：US15177726

申请日：2016-06-09

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  Benjamin Schmiege ,  David Thompson

IPC: H01L21/321 ,  H01L21/3213 ,  C23F1/00 ,  H01J37/32 ,  C23F1/12 ,  C23F4/00

CPC classification number: H01L21/32136 ,  C23F1/00 ,  C23F1/12 ,  C23F4/00 ,  H01J37/32715 ,  H01J37/32862 ,  H01L21/32135

Abstract: Provided are methods for etching films comprising transition metals. Certain methods involve activating a substrate surface comprising at least one transition metal, wherein activation of the substrate surface comprises exposing the substrate surface to heat, a plasma, an oxidizing environment, or a halide transfer agent to provide an activated substrate surface; and exposing the activated substrate surface to a reagent comprising a Lewis base or pi acid to provide a vapor phase coordination complex comprising one or more atoms of the transition metal coordinated to one or more ligands from the reagent. Certain other methods provide selective etching from a multi-layer substrate comprising two or more of a layer of Co, a layer of Cu and a layer of Ni.

公开(公告)号：US09683287B2

公开(公告)日：2017-06-20

申请号：US14058406

申请日：2013-10-21

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Srinivas Gandikota ,  Xinliang Lu ,  Wei Tang ,  Jing Zhou ,  Seshadri Ganguli ,  Jeffrey W. Anthis ,  Atif Noori ,  Faruk Gungor ,  Dien-Yeh Wu ,  Mei Chang ,  Shih Chung Chen

IPC: C23C16/12 ,  C23C16/30 ,  C23C16/455

CPC classification number: C23C16/30 ,  C23C16/45531 ,  C23C16/45534

Abstract: Films comprising Aluminum, carbon and a metal, wherein the aluminum is present in an amount greater than about 16% by elemental content and the film has less than about 50% carbon. Methods of forming the films comprise exposing a substrate to a metal halide precursor, purging the metal halide precursor from the processing chamber and then exposing the substrate to an alkyl aluminum precursor and an alane precursor, either sequentially or simultaneously. The alane precrursor comprises an amine-alane and a stabilizing amine selected from one or more of diemthylcyclohexylamine or dicyclomethylhexylamine.

公开(公告)号：US09580799B2

公开(公告)日：2017-02-28

申请号：US14134658

申请日：2013-12-19

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  David Thompson

IPC: C07F15/00 ,  C07D207/335 ,  C23C16/18 ,  C07D213/36 ,  C23C16/455 ,  C07D213/38 ,  C07F1/00 ,  C07F1/08 ,  C07F5/02 ,  C07F5/06 ,  C07F7/00 ,  C07F7/28 ,  C07F9/00 ,  C07F11/00 ,  C07F13/00

CPC classification number: C07D213/38 ,  C07C211/13 ,  C07C211/54 ,  C07D207/335 ,  C07D213/36 ,  C07F1/00 ,  C07F1/005 ,  C07F1/08 ,  C07F5/022 ,  C07F5/069 ,  C07F7/003 ,  C07F7/28 ,  C07F9/005 ,  C07F11/005 ,  C07F13/005 ,  C07F15/004 ,  C07F15/0053 ,  C07F15/0066 ,  C07F15/008 ,  C07F15/0093 ,  C23C16/18 ,  C23C16/45553 ,  C23C16/50

Abstract: Methods for deposition of elemental metal films on surfaces using metal coordination complexes comprising nitrogen-containing ligands are provided. Also provided are nitrogen-containing ligands useful in the methods of the invention and metal coordination complexes comprising these ligands.

Abstract translation: 提供了使用包含含氮配体的金属配位络合物在表面上沉积元素金属膜的方法。 还提供了可用于本发明方法的含氮配体和包含这些配体的金属配位络合物。

公开(公告)号：US20150162214A1

公开(公告)日：2015-06-11

申请号：US14560525

申请日：2014-12-04

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Huixiong Dai ,  Patrick M. Martin ,  Timothy Michaelson ,  Kadthala R. Narendrnath ,  Robert Jan Visser ,  Jingjing Xu ,  Lin Zhang

IPC: H01L21/3213 ,  H01L21/3205

CPC classification number: H01L21/32051 ,  C23C16/04 ,  C23C16/18 ,  C23C16/45551 ,  C23C16/45553 ,  H01L21/28562 ,  H01L21/76849

Abstract: Provided are methods for selective deposition. Certain methods describe providing a first substrate surface; providing a second substrate surface; depositing a first layer of film over the first and second substrate surfaces, wherein the deposition has an incubation delay over the second substrate surface such that the first layer of film over the first substrate surface is thicker than the first layer of film deposited over the second substrate surface; and etching the first layer of film over the first and second substrate surfaces, wherein the first layer of film over the second substrate surface is at least substantially removed, but the first layer of film over the first substrate is only partially removed.

Abstract translation: 提供了选择性沉积的方法。 某些方法描述了提供第一衬底表面; 提供第二衬底表面; 在所述第一和第二衬底表面上沉积第一层膜，其中所述沉积在所述第二衬底表面上具有孵育延迟，使得所述第一衬底表面上的所述第一层膜比沉积在所述第二衬底表面上的所述第一层膜厚 基材表面; 并且在所述第一和第二衬底表面上蚀刻所述第一层膜，其中所述第二衬底表面上的所述第一层膜至少被基本上去除，但所述第一衬底上的所述第一层膜仅被部分地去除。

公开(公告)号：US20150147484A1

公开(公告)日：2015-05-28

申请号：US14533496

申请日：2014-11-05

Applicant: Applied Materials, Inc.

Inventor： Victor Nguyen ,  Ning Li ,  Mihaela Balseanu ,  Li-Qun Xia ,  Mark Saly ,  David Thompson

IPC: C23C16/455 ,  C23C16/34

CPC classification number: C23C16/45553 ,  C23C16/345 ,  C23C16/36 ,  C23C16/45536 ,  C23C16/4554 ,  C23C16/45542

Abstract: Provided are methods for the deposition of films comprising SiCN. Certain methods involve exposing a substrate surface to a silicon precursor, wherein the silicon precursor is halogenated with Cl, Br or I, and the silicon precursor comprises a halogenated silane, a halogenated carbosilane, an halogenated aminosilane or a halogenated carbo-sillyl amine. Then, the substrate surface can be exposed to a nitrogen-containing plasma or a nitrogen precursor and densification plasma.

Abstract translation: 提供沉积包含SiCN的膜的方法。 某些方法包括将衬底表面暴露于硅前体，其中硅前体用Cl，Br或I卤化，硅前体包含卤代硅烷，卤代碳硅烷，卤代氨基硅烷或卤代碳硅烷基胺。 然后，可以将衬底表面暴露于含氮等离子体或氮前体和致密化等离子体。

公开(公告)号：US08927059B2

公开(公告)日：2015-01-06

申请号：US13669571

申请日：2012-11-06

Applicant: Applied Materials, Inc.

Inventor： Xinliang Lu ,  David Thompson ,  Jeffrey W. Anthis ,  Mei Chang ,  Seshadri Ganguli ,  Wei Tang ,  Srinivas Gandikota ,  Atif Noori

IPC: C23C16/06 ,  C23C16/08 ,  C23C16/10 ,  C23C16/22 ,  C23C16/455 ,  H01L21/285 ,  H01L21/768

CPC classification number: C23C16/455 ,  C23C16/06 ,  C23C16/45525 ,  H01L21/28562 ,  H01L21/76841

Abstract: Methods of depositing pure metal and aluminum alloy metal films. Certain methods comprises contacting a substrate surface with first and second precursors, the first precursor comprising an aluminum precursor selected from dimethylaluminum hydride, alane coordinated to an amine, and a compound having a structure represented by: wherein R is a C1-C6 alkyl group, and the second precursor comprising a metal halide. Other methods relate to sequentially exposing a substrate to a first and second precursor, the first precursor comprising an aluminum precursor as described above, and the second precursor comprising Ti(NR′2)4 or Ta(NR′2)5, wherein R′ is an alkyl, alkenyl, alkynyl, keto or aldehyde group.

Abstract translation: 沉积纯金属和铝合金金属膜的方法。 某些方法包括使基材表面与第一和第二前体接触，第一前体包含选自二甲基氢化铝，与胺配位的烷烃的铝前驱物和具有下列结构的化合物：其中R是C1-C6烷基， 并且第二前体包含金属卤化物。 其它方法涉及将衬底顺序地暴露于第一和第二前体，第一前体包含如上所述的铝前体，第二前体包含Ti（NR'2）4或Ta（NR'2）5，其中R' 是烷基，烯基，炔基，酮基或醛基。

公开(公告)号：US12261049B2

公开(公告)日：2025-03-25

申请号：US17836562

申请日：2022-06-09

Applicant: APPLIED MATERIALS, INC.

Inventor： David Thompson ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Lisa Enman ,  Aaron Dangerfield ,  Jesus Candelario Mendoza ,  Jeffrey W. Anthis ,  Lakmal Kalutarage

IPC: H01L21/306 ,  H01L21/02 ,  H01L21/027 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213

Abstract: Described herein is a method for selectively cleaning and/or etching a sample. The method includes selectively forming a film in a trench of a substrate such that the trench may be selectively etched. A polymer film is deposited on the bottom surface of the trench without being deposited on the side wall. A second film is selectively formed in the trench without forming the second film on the polymer film. The polymer is then removed from the bottom surface of the trench and then etching is performed on the bottom surface of the trench using an etch chemistry, wherein the second film protects the side wall from being etched.

公开(公告)号：US20240425536A1

公开(公告)日：2024-12-26

申请号：US18209217

申请日：2023-06-13

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Mark J. Saly ,  David Thompson

IPC: C07F11/00 ,  C23C16/40 ,  H01L21/02 ,  H01L21/3105

Abstract: Exemplary methods of semiconductor processing, such as methods of depositing a molybdenum-containing material on a substrate, may include providing a molybdenum-containing precursor to a processing region of a semiconductor processing chamber in which the substrate is located. The molybdenum-containing precursor may include a molybdenum complex according to Compound I: R may be methyl or ethyl, R′ may be methyl or ethyl, R″ may be methyl, ethyl, or propyl, and n may be equal to 1 or 2. Contacting the substrate with the molybdenum-containing precursor may deposit the molybdenum-containing material on the substrate.

公开(公告)号：US12094766B2

公开(公告)日：2024-09-17

申请号：US17971212

申请日：2022-10-21

Applicant: Applied Materials, Inc.

Inventor： Michael L. McSwiney ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Drew Phillips ,  Aaron Dangerfield ,  David Thompson ,  Kevin Kashefi ,  Xiangjin Xie

IPC: H01L21/768 ,  B05D1/00 ,  H01L21/02

CPC classification number: H01L21/76829 ,  B05D1/60 ,  H01L21/02118 ,  H01L21/02205 ,  H01L21/76846 ,  H01L21/76877

Abstract: Methods for selectively depositing on metallic surfaces are disclosed. Some embodiments of the disclosure utilize a hydrocarbon having at least two functional groups selected from alkene, alkyne, ketone, hydroxyl, aldehyde, or combinations thereof to form a self-assembled monolayer (SAM) on metallic surfaces.