公开(公告)号：US08354336B2

公开(公告)日：2013-01-15

申请号：US12820543

申请日：2010-06-22

申请人： Ali Afzali-Ardakani ,  Shafaat Ahmed ,  Hariklia Deligianni ,  Dario L. Goldfarb ,  Stefan Harrer ,  Binquan Luan ,  Glenn J. Martyna ,  Hongbo Peng ,  Stanislav Polonsky ,  Stephen Rossnagel ,  Xiaoyan Shao ,  Gustavo A. Stolovitzky

发明人： Ali Afzali-Ardakani ,  Shafaat Ahmed ,  Hariklia Deligianni ,  Dario L. Goldfarb ,  Stefan Harrer ,  Binquan Luan ,  Glenn J. Martyna ,  Hongbo Peng ,  Stanislav Polonsky ,  Stephen Rossnagel ,  Xiaoyan Shao ,  Gustavo A. Stolovitzky

IPC分类号： H01L21/28 ,  H01L21/3205

CPC分类号： B82Y10/00 ,  H01L21/76834 ,  H01L29/0665 ,  H01L51/0093 ,  H01L51/0504 ,  H01L51/102

摘要： Accordingly, the present invention provides a method of forming an electrode having reduced corrosion and water decomposition on a surface thereof. A substrate which has a conductive layer disposed thereon is provided and the conductive layer has an oxide layer with an exposed surface. The exposed surface of the oxide layer contacts a solution of an organic surface active compound in an organic solvent to form a protective layer of the organic surface active compound over the oxide layer. The protective layer has a thickness of from about 0.5 nm to about 5 nm and ranges therebetween depending on a chemical structure of the surface active compound.

摘要翻译： 因此，本发明提供一种在其表面上形成具有降低的腐蚀和水分解的电极的方法。 提供了具有设置在其上的导电层的衬底，并且导电层具有具有暴露表面的氧化物层。 氧化物层的暴露表面接触有机表面活性化合物在有机溶剂中的溶液，以在氧化物层上形成有机表面活性化合物的保护层。 根据表面活性化合物的化学结构，保护层的厚度为约0.5nm至约5nm，并且其范围。

公开(公告)号：US20130008798A1

公开(公告)日：2013-01-10

申请号：US13604054

申请日：2012-09-05

申请人： Shafaat Ahmed ,  Hariklia Deligianni ,  Qiang Huang ,  Kathleen B. Reuter ,  Lubomyr T. Romankiw ,  Raman Vaidyanathan

发明人： Shafaat Ahmed ,  Hariklia Deligianni ,  Qiang Huang ,  Kathleen B. Reuter ,  Lubomyr T. Romankiw ,  Raman Vaidyanathan

IPC分类号： C25D5/10 ,  C25D5/50 ,  C25D5/48

CPC分类号： H01L31/0322 ,  C25D3/38 ,  C25D3/54 ,  C25D3/58 ,  C25D5/10 ,  C25D5/56 ,  C25D7/126 ,  H01L21/02568 ,  H01L21/02628 ,  H01L23/3738 ,  H01L31/0749 ,  H01L2224/73253 ,  Y02E10/541

摘要： Photovoltaic devices and methods for preparing a p-type semiconductor generally include electroplating a layer of gallium or a gallium alloy onto a conductive layer by contacting the conductive layer with a plating bath free of complexing agents including a gallium salt, methane sulfonic acid or sodium sulfate and an organic additive comprising at least one nitrogen atom and/or at least one sulfur atom, and a solvent; adjusting a pH of the solution to be less than 2.6 or greater than 12.6. The photovoltaic device includes an impurity in the p-type semiconductor layer selected from the group consisting of arsenic, antimony, bismuth, and mixtures thereof. Various photovoltaic precursor layers for forming CIS, CGS and CIGS p-type semiconductor structures can be formed by electroplating the gallium or gallium alloys in this manner. Also disclosed are processes for forming a thermal interface of gallium or a gallium alloy.

摘要翻译： 用于制备p型半导体的光伏器件和方法通常包括通过使导电层与不含络合剂的镀浴接触将一层镓或镓合金电镀到导电层上，所述络合剂包括镓盐，甲磺酸或硫酸钠 和包含至少一个氮原子和/或至少一个硫原子的有机添加剂和溶剂; 调节溶液的pH值小于2.6或大于12.6。 光电器件包括选自砷，锑，铋及其混合物的p型半导体层中的杂质。 可以通过以这种方式电镀镓或镓合金来形成用于形成CIS，CGS和CIGS p型半导体结构的各种光伏前体层。 还公开了形成镓或镓合金的热界面的方法。

公开(公告)号：US20120325668A1

公开(公告)日：2012-12-27

申请号：US13604060

申请日：2012-09-05

申请人： Shafaat Ahmed ,  Hariklia Deligianni

发明人： Shafaat Ahmed ,  Hariklia Deligianni

IPC分类号： C25D3/56 ,  C25D5/54 ,  C25D3/54 ,  C25D21/00

CPC分类号： C25D3/54 ,  C25D3/56

摘要： Solutions and processes for electrodepositing gallium or gallium alloys includes a plating bath free of complexing agents including a gallium salt, an indium salt, a combination thereof, and a combination of any of the preceding salts with copper, an acid, and a solvent, wherein the pH of the solution is in a range selected from the group consisting of from about zero to about 2.6 and greater than about 12.6 to about 14. An optional metalloid may be included in the solution.

公开(公告)号：US20120048378A1

公开(公告)日：2012-03-01

申请号：US13222266

申请日：2011-08-31

申请人： Hariklia Deligianni ,  Lian Guo ,  Raman Vaidyanathan

发明人： Hariklia Deligianni ,  Lian Guo ,  Raman Vaidyanathan

IPC分类号： C25D5/10 ,  H01L31/0272 ,  H01L31/02

CPC分类号： C25D5/006 ,  C25D3/58 ,  C25D5/06 ,  C25D5/10 ,  C25D5/48 ,  C25D5/50 ,  C25D7/12 ,  H01L31/032 ,  H01L31/0326 ,  H01L31/18 ,  H01L31/1864 ,  Y02E10/50

摘要： A structure and method of making a thin-film solar cell. A thin-film solar cell includes a substrate, absorber layer and a buffer layer. The absorber layer is deposited by a single-step bulk electrochemical process, or a multi-layer electrochemical process. The buffer layer is deposited by an electrochemical deposition process such as a multi-layer deposition or an atomic layer deposition. The absorber and buffer layers are non-toxic materials which can include sulfur incorporated during the deposition process or incorporated after deposition by an anneal step.

摘要翻译： 制造薄膜太阳能电池的结构和方法。 薄膜太阳能电池包括基板，吸收层和缓冲层。 吸收层通过单步本体电化学方法或多层电化学方法沉积。 通过诸如多层沉积或原子层沉积的电化学沉积工艺沉积缓冲层。 吸收器和缓冲层是无毒材料，其可以包括在沉积过程中引入的硫或通过退火步骤沉积后结合的硫。

公开(公告)号：US20110308969A1

公开(公告)日：2011-12-22

申请号：US12820574

申请日：2010-06-22

申请人： Ali Afzali-Azdakani ,  Shafaat Ahmed ,  Hariklia Deligianni ,  Stefan Harrer ,  Binquan Luan ,  Glenn J. Martyna ,  Hongbo Peng ,  Stanislav Polonsky ,  Stephen Rossnagel ,  Xiaoyan Shao ,  Gustavo A. Stolovitzky

发明人： Ali Afzali-Azdakani ,  Shafaat Ahmed ,  Hariklia Deligianni ,  Stefan Harrer ,  Binquan Luan ,  Glenn J. Martyna ,  Hongbo Peng ,  Stanislav Polonsky ,  Stephen Rossnagel ,  Xiaoyan Shao ,  Gustavo A. Stolovitzky

IPC分类号： G01N17/04

CPC分类号： G01N17/04

摘要： The present invention provides a method of reducing corrosion and water decomposition on a surface of an electrode having a titanium nitride conductive layer disposed on a substrate and estimating extent of reduction thereof. The electrode is immersed into a solution containing a hydroxyl-functional compound. Thereafter, a voltage is applied to the titanium nitride conductive layer of the electrode. The extent of oxidation of the titanium nitride conductive layer is correlated with the extent of formation of oxide of titanium nitride and/or the extent of oxidation of the titanium nitride conductive layer is correlated with the increase of surface roughness. The extent of water decomposition is correlated with formation of hydrogen and oxygen bubbles.

摘要翻译： 本发明提供了在具有设置在基板上的具有氮化钛导电层的电极的表面上减少腐蚀和水分解的方法，并且估计其还原程度。 将电极浸入含有羟基官能化合物的溶液中。 然后，向电极的氮化钛导电层施加电压。 氮化钛导电层的氧化程度与氮化钛的氧化物的形成程度和/或氮化钛导电层的氧化程度与表面粗糙度的增加有关。 水分解的程度与氢气和氧气泡的形成有关。

公开(公告)号：US07868410B2

公开(公告)日：2011-01-11

申请号：US12040350

申请日：2008-02-29

申请人： Philippe M. Vereecken ,  Veeraraghavan S. Basker ,  Cyril Cabral, Jr. ,  Emanuel I. Cooper ,  Hariklia Deligianni ,  Martin M. Frank ,  Rajarao Jammy ,  Vamsi Krishna Paruchuri ,  Katherine L. Saenger ,  Xiaoyan Shao

发明人： Philippe M. Vereecken ,  Veeraraghavan S. Basker ,  Cyril Cabral, Jr. ,  Emanuel I. Cooper ,  Hariklia Deligianni ,  Martin M. Frank ,  Rajarao Jammy ,  Vamsi Krishna Paruchuri ,  Katherine L. Saenger ,  Xiaoyan Shao

IPC分类号： H01L21/70

CPC分类号： H01L21/2885 ,  C25D3/50 ,  C25D5/02 ,  C25D5/024 ,  C25D5/54 ,  C25D7/123 ,  C25D9/04 ,  C25F3/14 ,  H01L21/28079 ,  H01L21/28114 ,  H01L21/76885 ,  H01L29/513 ,  H01L29/517 ,  H01L29/78648

摘要： A method is provided for electroplating a gate metal or other conducting or semiconducting material directly on a dielectric such as a gate dielectric. The method involves selecting a substrate, dielectric layer, and electrolyte solution or melt, wherein the combination of the substrate, dielectric layer, and electrolyte solution or melt allow an electrochemical current to be passed from the substrate through the dielectric layer into the electrolyte solution or melt. Methods are also provided for electrochemical modification of dielectrics utilizing through-dielectric current flow.

摘要翻译： 提供了一种用于将栅极金属或其它导电或半导体材料直接电镀在诸如栅极电介质的电介质上的方法。 该方法包括选择衬底，电介质层和电解质溶液或熔体，其中衬底，电介质层和电解质溶液或熔体的组合允许电化学电流从衬底通过电介质层进入电解质溶液或 熔化。 还提供了利用电介质电流流动的电介质电化学修饰方法。

公开(公告)号：US07659200B2

公开(公告)日：2010-02-09

申请号：US11620391

申请日：2007-01-05

申请人： Guy Cohen ,  Qiang Huang ,  Lubomyr T. Romankiw ,  Hariklia Deligianni

发明人： Guy Cohen ,  Qiang Huang ,  Lubomyr T. Romankiw ,  Hariklia Deligianni

IPC分类号： H01L21/302

CPC分类号： C25D3/54 ,  B82Y10/00 ,  C25D5/022 ,  C25D7/123 ,  H01L21/0237 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/02628 ,  H01L21/02639 ,  Y10S977/762

摘要： A nanostructure comprising germanium, including wires of less than 1 micron in diameter and walls of less than 1 micron in width, in contact with the substrate and extending outward from the substrate is provided along with a method of preparation.

摘要翻译： 提供包括锗的纳米结构，其包括直径小于1微米的导线和宽度小于1微米的与基底接触并从基底向外延伸的纳米结构以及制备方法。

公开(公告)号：US20090301890A1

公开(公告)日：2009-12-10

申请号：US12540710

申请日：2009-08-13

申请人： Hariklia Deligianni ,  Qiang Huang ,  Lubomyr T. Romankiw

发明人： Hariklia Deligianni ,  Qiang Huang ,  Lubomyr T. Romankiw

IPC分类号： C25D5/02 ,  C25D5/18

CPC分类号： C25D5/022 ,  B82Y25/00 ,  C25D3/562 ,  C25D5/10 ,  C25D5/18 ,  H01F1/0072 ,  H01F41/26 ,  Y10S977/762 ,  Y10S977/81 ,  Y10S977/838 ,  Y10T428/12028 ,  Y10T428/12465 ,  Y10T428/12493 ,  Y10T428/12931 ,  Y10T428/12944 ,  Y10T428/12951 ,  Y10T428/12986 ,  Y10T428/24967 ,  Y10T428/2982

摘要： The present invention is related to a method for forming a structure that contains alternating first and second ferromagnetic layers of different material compositions. A substrate containing a supporting matrix with at least one open pore and a conductive base layer is first formed. Electroplating of the substrate is then carried out in an electroplating solution that contains at least one ferromagnetic metal element and one or more additional, different metal elements. A pulsed current with alternating high and low potentials is applied to the conductive base layer of the substrate structure to thereby form alternating ferromagnetic layers of different material compositions in the open pore of the supporting matrix.

摘要翻译： 本发明涉及一种用于形成包含不同材料组成的交替的第一和第二铁磁层的结构的方法。 首先形成含有具有至少一个开放孔的支撑基体和导电性基底层的基板。 然后在含有至少一种铁磁金属元素和一种或多种另外不同的金属元素的电镀溶液中进行基底的电镀。 具有交替的高电位和低电位的脉冲电流被施加到衬底结构的导电基底层，从而在支撑矩阵的开孔中形成不同材料组成的交替铁磁层。

公开(公告)号：US07602265B2

公开(公告)日：2009-10-13

申请号：US11163485

申请日：2005-10-20

申请人： Hariklia Deligianni ,  Robert D. Edwards ,  Thomas J. Fleischman ,  Robert A. Groves ,  Charles J. Montrose ,  Richard P. Volant ,  Ping-Chuan Wang

发明人： Hariklia Deligianni ,  Robert D. Edwards ,  Thomas J. Fleischman ,  Robert A. Groves ,  Charles J. Montrose ,  Richard P. Volant ,  Ping-Chuan Wang

IPC分类号： H01H51/22

CPC分类号： H01H59/0009

摘要： The present invention provides multiple test structures for performing reliability and qualification tests on MEMS switch devices. A Test structure for contact and gap characteristic measurements is employed having a serpentine layout simulates rows of upper and lower actuation electrodes. A cascaded switch chain test is used to monitor process defects with large sample sizes. A ring oscillator is used to measure switch speed and switch lifetime. A resistor ladder test structure is configured having each resistor in series with a switch to be tested, and having each switch-resistor pair electrically connected in parallel. Serial/parallel test structures are proposed with MEMS switches working in tandem with switches of established technology. A shift register is used to monitor the open and close state of the MEMS switches. Pull-in voltage, drop-out voltage, activation leakage current, and switch lifetime measurements are performed using the shift register.

摘要翻译： 本发明提供用于在MEMS开关装置上执行可靠性和鉴定测试的多个测试结构。 采用具有蛇形布局的接触和间隙特性测量的测试结构来模拟上下驱动电极的行。 级联交换链测试用于监控大样本量的过程缺陷。 环形振荡器用于测量开关速度和开关寿命。 电阻梯形测试结构被配置为具有与要测试的开关串联的每个电阻器，并且每个开关电阻器对并联电连接。 提出了串联/并联测试结构，其中MEMS开关与成熟技术的开关串联工作。 移位寄存器用于监测MEMS开关的开启和关闭状态。 使用移位寄存器执行拉入电压，掉电电压，启动漏电流和开关寿命测量。

公开(公告)号：US07405154B2

公开(公告)日：2008-07-29

申请号：US11308433

申请日：2006-03-24

申请人： Cyril Cabral, Jr. ,  Hariklia Deligianni ,  Randolph F. Knarr ,  Sandra G. Malhotra ,  Stephen Rossnagel ,  Xiaoyan Shao ,  Anna Topol ,  Philippe M. Vereecken

发明人： Cyril Cabral, Jr. ,  Hariklia Deligianni ,  Randolph F. Knarr ,  Sandra G. Malhotra ,  Stephen Rossnagel ,  Xiaoyan Shao ,  Anna Topol ,  Philippe M. Vereecken

IPC分类号： H01L21/4763

CPC分类号： H01L23/485 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76877 ,  H01L23/53252 ,  H01L2924/0002 ,  H01L2924/00

摘要： A contact metallurgy structure comprising a patterned dielectric layer having cavities on a substrate; a silicide or germanide layer such as of cobalt and/or nickel located at the bottom of cavities; a contact layer comprising Ti or Ti/TiN located on top of the dielectric layer and inside the cavities and making contact to the silicide or germanide layer on the bottom; a diffusion barrier layer located on top of the contact layer and inside the cavities; optionally a seed layer for plating located on top of the barrier layer; a metal fill layer in vias is provided along with a method of fabrication. The metal fill layer is electrodeposited with at least one member selected from the group consisting of copper, rhodium, ruthenium, iridium, molybdenum, gold, silver, nickel, cobalt, silver, gold, cadmium and zinc and alloys thereof. When the metal fill layer is rhodium, ruthenium, or iridium, an effective diffusion barrier layer is not required between the fill metal and the dielectric. When the barrier layer is platable, such as ruthenium, rhodium, platinum, or iridium, the seed layer is not required.

摘要翻译： 一种接触式冶金结构，包括在基底上具有空腔的图案化电介质层; 位于空腔底部的硅化物或锗化物层，例如钴和/或镍; 接触层，其包含位于介电层顶部并且在空腔内并与底部的硅化物或锗化物层接触的Ti或Ti / TiN; 位于所述接触层顶部和所述空腔内的扩散阻挡层; 可选地，位于阻挡层顶部的用于电镀的种子层; 提供通孔中的金属填充层以及制造方法。 金属填充层用选自铜，铑，钌，铱，钼，金，银，镍，钴，银，金，镉和锌中的至少一种电池和其合金电沉积。 当金属填充层是铑，钌或铱时，在填充金属和电介质之间不需要有效的扩散阻挡层。 当阻挡层是可镀的，例如钌，铑，铂或铱时，不需要种子层。