Voltage generating circuit for semiconductor memory sense amplifier
    63.
    发明授权
    Voltage generating circuit for semiconductor memory sense amplifier 有权
    半导体存储器读出放大器的电压产生电路

    公开(公告)号:US06169698A

    公开(公告)日:2001-01-02

    申请号:US09189076

    申请日:1998-11-09

    IPC分类号: G11C700

    摘要: Drop in the power supply level right after change can be suppressed greatly when changing the power to the internal power supply voltage from the external power supply voltage of an overdrive system. Voltage generating circuit VG0 is connected to the VDL line which raises the VDL line to a voltage higher than VDL beforehand prior to changing to internal power supply voltage VDL from external power supply voltage VDD, and restores the VDL line voltage which drops after the change to VDL. More specifically, there are detecting circuit part 40 which detects the VDL line potential, first switching element M1 connected between the VDL line and the VDD line and which operates according to the detected result of detecting circuit part 40, and second switching element M2 connected between common voltage VSS and connection node ND1 between first switching element M1 and detecting circuit part 40, which changes the potential of connection node ND1 by conducting according to input preliminary voltage step up signal MVDL, and by it conducts first switching element M1 for a fixed time.

    摘要翻译: 在从过驱动系统的外部电源电压改变内部电源电压的电源时,可以大幅度地抑制变更后的电源电平下降。 在从外部电源电压VDD变为内部电源电压VDL之前,将电压生成电路VG0与VDL线连接,将VDL线预先升压至高于VDL的电压,并且将变更后降低的VDL线电压恢复为 VDL。 更具体地,存在检测VDL线电位的检测电路部40,连接在VDL线与VDD线之间的第一开关元件M1,其根据检测电路部40的检测结果进行动作,第二开关元件M2连接在 第一开关元件M1和检测电路部分40之间的公共电压VSS和连接节点ND1,其通过根据输入的初步升压信号MVDL进行导通来改变连接节点ND1的电位,并且通过其将第一开关元件M1导通固定时间 。

    Dynamic memory
    64.
    发明授权
    Dynamic memory 失效
    动态内存

    公开(公告)号:US6031779A

    公开(公告)日:2000-02-29

    申请号:US058147

    申请日:1998-04-10

    摘要: Described herein is a dynamic memory. An N channel type voltage clamp MOSFET is provided which has a drain supplied with a supply voltage supplied from an external terminal, a gate to which a boosted constant voltage is applied, and a source which outputs a constant voltage. The clamp voltage outputted from the source of the voltage clamp MOSFET is supplied to a common source line for each of P channel type amplification MOSFETs constituting a sense amplifier via a P channel type first power MOSFET switch-controlled by a sense amplifier activation signal, as a voltage for operating the sense amplifier. Further, the constant voltage outputted from the source of the voltage clamp MOSFET is supplied to an N-well region in which the P channel type first power MOSFET and the P channel type MOSFETs constituting the sense amplifier are formed, as a bias voltage.

    摘要翻译: 这里描述的是动态存储器。 提供了一种N沟道型电压钳位MOSFET,其具有供给从外部端子提供的电源电压的漏极,施加升压恒定电压的栅极和输出恒定电压的源极。 从电压钳位MOSFET的源极输出的钳位电压通过由读出放大器激活信号开关控制的P沟道型第一功率MOSFET构成读出放大器的每个P沟道型放大器MOSFET,被提供给公共源极线,如 用于操作读出放大器的电压。 此外,从电压钳位MOSFET的源极输出的恒定电压被提供给形成P沟道型第一功率MOSFET和构成读出放大器的P沟道型MOSFET的N阱区域作为偏置电压。