公开(公告)号：US10256198B2

公开(公告)日：2019-04-09

申请号：US15468067

申请日：2017-03-23

Applicant: INTEL CORPORATION

Inventor： Eric J. Li ,  Guotao Wang ,  Huiyang Fei ,  Sairam Agraharam ,  Omkar G. Karhade ,  Nitin A. Deshpande

IPC: H01L23/12 ,  H01L23/053 ,  H01L23/00 ,  H01L23/498 ,  H01L23/31 ,  H05K3/30 ,  H05K3/34 ,  H01L21/48 ,  H05K1/18

Abstract: Techniques for reducing warpage for microelectronic packages are provided. A warpage control layer or stiffener can be attached to a bottom surface of a substrate or layer that is used to attach the microelectronics package to a motherboard. The warpage control layer can have a thickness approximately equal to a thickness of a die of the microelectronics package. A coefficient of thermal expansion of the warpage control layer can be selected to approximately match a CTE of the die. The warpage control layer can be formed from an insulating material or a metallic material. The warpage control layer can comprise multiple materials and can include copper pillar segments to adjust the effective CTE of the warpage control layer. The warpage control layer can be positioned between the microelectronics package and the motherboard, thereby providing warpage control without contributing to the z-height of the microelectronics package.

公开(公告)号：US20170330835A1

公开(公告)日：2017-11-16

申请号：US15668179

申请日：2017-08-03

Applicant: INTEL CORPORATION

Inventor： Nitin A. Deshpande ,  Omkar G. Karhade

IPC: H01L23/538 ,  H01L23/522

CPC classification number: H01L23/5383 ,  H01L21/486 ,  H01L23/13 ,  H01L23/522 ,  H01L23/5381 ,  H01L23/5384 ,  H01L23/5385 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/14 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/1703 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/15153 ,  H01L2924/15192

Abstract: A microelectronic structure includes a substrate having a first surface and a cavity extending into the substrate from the substrate first surface, a first microelectronic device and a second microelectronic device attached to the substrate first surface, and a bridge disposed within the substrate cavity and attached to the first microelectronic device and to the second microelectronic device. The bridge includes a plurality conductive vias extending from a first surface to an opposing second surface of the bridge, wherein the conductive vias are electrically coupled to deliver electrical signals from the substrate to the first microelectronic device and the second microelectronic device. The bridge further creates at least one electrical signal connection between the first microelectronic device and the second microelectronic device.

公开(公告)号：US20170290155A1

公开(公告)日：2017-10-05

申请号：US15628430

申请日：2017-06-20

Applicant: INTEL CORPORATION

Inventor： Adel A. Elsherbini ,  Ravindranath Mahajan ,  John S. Guzek ,  Nitin A. Deshpande

IPC: H05K1/14 ,  H01L25/00 ,  H05K1/02 ,  H01L23/498 ,  H01L23/552 ,  H01L25/065

CPC classification number: H05K1/147 ,  H01L23/13 ,  H01L23/49833 ,  H01L23/552 ,  H01L25/0655 ,  H01L25/50 ,  H01L2224/13025 ,  H01L2224/16225 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73253 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/3025 ,  H05K1/0218 ,  H05K3/361 ,  H05K2201/09245 ,  H05K2201/09681 ,  Y10T29/49126

Abstract: Embodiments of the present disclosure are directed towards electro-magnetic interference (EMI) shielding techniques and configurations. In one embodiment, an apparatus includes a first substrate, a die having interconnect structures coupled with the first substrate to route input/output (I/O) signals between the die and the first substrate and a second substrate coupled with the first substrate, wherein the die is disposed between the first substrate and the second substrate and at least one of the first substrate and the second substrate include traces configured to provide electro-magnetic interference (EMI) shielding for the die. Other embodiments may be described and/or claimed.

公开(公告)号：US09685388B2

公开(公告)日：2017-06-20

申请号：US15296995

申请日：2016-10-18

Applicant: Intel Corporation

Inventor： Yoshihiro Tomita ,  Jiro Kubota ,  Omkar G. Karhade ,  Shawna M. Liff ,  Kinya Ichikawa ,  Nitin A. Deshpande

IPC: H01L23/18 ,  H01L21/56 ,  H01L25/10 ,  H01L23/538 ,  H01L23/498

CPC classification number: H01L23/18 ,  H01L21/566 ,  H01L21/568 ,  H01L23/16 ,  H01L23/3135 ,  H01L23/481 ,  H01L23/49805 ,  H01L23/49838 ,  H01L23/5226 ,  H01L23/5385 ,  H01L23/5389 ,  H01L24/17 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/73204 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2225/1023 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2225/107 ,  H01L2924/14 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/15192 ,  H01L2924/15313 ,  H01L2924/18161 ,  H01L2924/3511

Abstract: A microelectronic package may be formed with a picture frame stiffener surrounding a microelectronic die for reducing warpage of the microelectronic package. An embodiment for fabricating such a microelectronic package may include forming a microelectronic die having an active surface and an opposing back surface, wherein the microelectronic die active surface may be attached to a microelectronic substrate. A picture frame stiffener having an opening therethrough may be formed and placed on a release film, wherein a mold material may be deposited over the picture frame stiffener and the release film. The microelectronic die may be inserted into the mold material, wherein at least a portion of the microelectronic die extends into the picture frame opening. The release film may be removed and a portion of the mold material extending over the microelectronic die back surface may then be removed to form the microelectronic package.

公开(公告)号：US20160343666A1

公开(公告)日：2016-11-24

申请号：US15114036

申请日：2014-02-26

Applicant: INTEL CORPORATION

Inventor： Nitin A. Deshpande ,  Omkar G. Karhade

IPC: H01L23/538 ,  H01L21/48 ,  H01L23/00 ,  H01L23/13

CPC classification number: H01L23/5383 ,  H01L21/486 ,  H01L23/13 ,  H01L23/522 ,  H01L23/5381 ,  H01L23/5384 ,  H01L23/5385 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/14 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/1703 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/15153 ,  H01L2924/15192

Abstract: A microelectronic structure includes a substrate having a first surface and a cavity extending into the substrate from the substrate first surface, a first microelectronic device and a second microelectronic device attached to the substrate first surface, and a bridge disposed within the substrate cavity and attached to the first microelectronic device and to the second microelectronic device. The bridge includes a plurality conductive vias extending from a first surface to an opposing second surface of the bridge, wherein the conductive vias are electrically coupled to deliver electrical signals from the substrate to the first microelectronic device and the second microelectronic device. The bridge further creates at least one electrical signal connection between the first microelectronic device and the second microelectronic device.

Abstract translation: 微电子结构包括具有第一表面和从衬底第一表面延伸到衬底中的空腔的衬底，附接到衬底第一表面的第一微电子器件和第二微电子器件，以及设置在衬底腔内并附接到 第一微电子器件和第二微电子器件。 桥包括从桥的第一表面延伸到相对的第二表面的多个导电通孔，其中导电通孔电耦合以将电信号从基板传递到第一微电子器件和第二微电子器件。 该桥进一步在第一微电子器件和第二微电子器件之间产生至少一个电信号连接。

公开(公告)号：US09502368B2

公开(公告)日：2016-11-22

申请号：US14571623

申请日：2014-12-16

Applicant: Intel Corporation

Inventor： Yoshihiro Tomita ,  Jiro Kubota ,  Omkar G. Karhade ,  Shawna M. Liff ,  Kinya Ichikawa ,  Nitin A. Deshpande

IPC: H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L23/522 ,  H01L21/56 ,  H01L25/00 ,  H01L25/065 ,  H01L23/48

CPC classification number: H01L23/18 ,  H01L21/566 ,  H01L21/568 ,  H01L23/16 ,  H01L23/3135 ,  H01L23/481 ,  H01L23/49805 ,  H01L23/49838 ,  H01L23/5226 ,  H01L23/5385 ,  H01L23/5389 ,  H01L24/17 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/73204 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2225/1023 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2225/107 ,  H01L2924/14 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/15192 ,  H01L2924/15313 ,  H01L2924/18161 ,  H01L2924/3511

Abstract: A microelectronic package may be formed with a picture frame stiffener surrounding a microelectronic die for reducing warpage of the microelectronic package. An embodiment for fabricating such a microelectronic package may include forming a microelectronic die having an active surface and an opposing back surface, wherein the microelectronic die active surface may be attached to a microelectronic substrate. A picture frame stiffener having an opening therethrough may be formed and placed on a release film, wherein a mold material may be deposited over the picture frame stiffener and the release film. The microelectronic die may be inserted into the mold material, wherein at least a portion of the microelectronic die extends into the picture frame opening. The release film may be removed and a portion of the mold material extending over the microelectronic die back surface may then be removed to form the microelectronic package.

Abstract translation: 微电子封装可以形成有围绕微电子管芯的图框加强件，以减少微电子封装的翘曲。 用于制造这种微电子封装的实施例可以包括形成具有有源表面和相对背面的微电子管芯，其中微电子管芯有源表面可以附接到微电子衬底。 可以形成具有穿过其中的开口的相框加强件并将其放置在脱模膜上，其中模塑材料可以沉积在画框加强件和释放膜上。 微电子管芯可以插入模具材料中，其中微电子管芯的至少一部分延伸到相框开口中。 可以去除剥离膜，然后可以移除在微电子管芯背表面上延伸的一部分模具材料以形成微电子封装。

公开(公告)号：US20250079398A1

公开(公告)日：2025-03-06

申请号：US18460817

申请日：2023-09-05

Applicant: Intel Corporation

Inventor： Sagar Suthram ,  Wilfred Gomes ,  Ravindranath Vithal Mahajan ,  Debendra Mallik ,  Pushkar Sharad Ranade ,  Nitin A. Deshpande ,  Abhishek A. Sharma

IPC: H01L25/065 ,  H01L23/00 ,  H01L23/528 ,  H10B80/00

Abstract: Embodiments of a microelectronic assembly may include a first integrated circuit (IC) die having a first surface, a second surface opposite the first surface, and a third surface orthogonal to the first and second surfaces, the first IC die including conductive traces that are parallel to the first and second surfaces and exposed at the third surface; a second IC die having a fourth surface and including voltage regulator circuitry; and a third IC die having a fifth surface, wherein the third surface of the first IC die is electrically coupled to the fifth surface of the third IC die by first interconnects, the fourth surface of the second IC die is electrically coupled to the fifth surface of the third IC die by second interconnects, and the first IC die is electrically coupled to the second IC die by conductive pathways in the third IC die.

公开(公告)号：US20250079392A1

公开(公告)日：2025-03-06

申请号：US18458621

申请日：2023-08-30

Applicant: Intel Corporation

Inventor： Omkar G. Karhade ,  Nitin A. Deshpande ,  Mohammad Enamul Kabir ,  Debendra Mallik

IPC: H01L23/00 ,  H01L25/065

Abstract: Hybrid bonding interconnect (HBI) architectures for scalability. Embodiments implement a bonding layer on a semiconductor die that includes a thick oxide layer overlaid with a thin layer of a hermetic material including silicon and at least one of carbon and nitrogen. The conductive bonds of the semiconductor die are placed in the thick oxide layer and exposed at the surface of the hermetic material. Some embodiments implement a non-bonding moisture seal ring (MSR) structure.

公开(公告)号：US20250006652A1

公开(公告)日：2025-01-02

申请号：US18346098

申请日：2023-06-30

Applicant: Intel Corporation

Inventor： Omkar G. Karhade ,  Nitin A. Deshpande ,  Francisco Maya ,  Bhaskar Jyoti Krishnatreya ,  Tan Nguyen ,  Siyan Dong ,  Alveera Gill ,  Keith E. Zawadzki

IPC: H01L23/544 ,  H01L23/00 ,  H01L25/065

Abstract: An apparatus comprising a first integrated circuit device, the first integrated circuit device comprising a first layer with an area comprising metallization and metal-free slits; and a fiducial in a second layer above the first layer, the fiducial formed over the area comprising the metallization and metal-free slits.

公开(公告)号：US12183596B2

公开(公告)日：2024-12-31

申请号：US18226129

申请日：2023-07-25

Applicant: Intel Corporation

Inventor： Omkar G. Karhade ,  Nitin A. Deshpande ,  Debendra Mallik ,  Bassam M. Ziadeh ,  Yoshihiro Tomita

IPC: H01L21/56 ,  H01L23/00 ,  H01L23/16 ,  H01L25/00 ,  H01L25/065 ,  H01L25/18

Abstract: Embodiments of the invention include device packages and methods of forming such packages. In an embodiment, the method of forming a device package may comprise forming a reinforcement layer over a substrate. One or more openings may be formed through the reinforcement layer. In an embodiment, a device die may be placed into one of the openings. The device die may be bonded to the substrate by reflowing one or more solder bumps positioned between the device die and the substrate. Embodiments of the invention may include a molded reinforcement layer. Alternative embodiments include a reinforcement layer that is adhered to the surface of the substrate with an adhesive layer.