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公开(公告)号：US08080833B2
公开(公告)日：2011-12-20
申请号：US12764584
申请日：2010-04-21
IPC分类号： H01L33/00
CPC分类号： H01L21/0254 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0262 , H01L33/025 , H01L33/08 , H01L33/12 , H01L33/20 , H01L33/22 , H01L33/32
摘要： In various embodiments, a semiconductor device includes an aluminum nitride single-crystal substrate, a pseudomorphic strained layer disposed thereover that comprises at least one of AlN, GaN, InN, or an alloy thereof, and, disposed over the strained layer, a semiconductor layer that is lattice-mismatched to the substrate and substantially relaxed.
摘要翻译： 在各种实施例中，半导体器件包括氮化铝单晶衬底，设置在其上的假晶应变层，其包括AlN，GaN，InN或其合金中的至少一种，并且在应变层上设置半导体层 这与衬底晶格失配并基本上松弛。
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62.发明授权公开(公告)号：US07087112B1
公开(公告)日：2006-08-08
申请号：US10725869
申请日：2003-12-02
IPC分类号： C30B29/38
CPC分类号： C30B29/403 , C30B23/00
摘要： An apparatus and method for fabricating a mount for an aluminum nitride (AlN) seed for single crystal aluminum nitride growth is provided. A holder having a proximal base and wall portions extending therefrom is fabricated from crystal growth crucible material, and defines an internal cavity. An AlN seed is placed within the holder, and placed within a nitrogen atmosphere at a temperature at or exceeding the melting point of a suitable material capable of forming a nitride ceramic by nitridation, such as aluminum. Pellets fabricated from this material are dropped into the holder and onto the seed, so that they melt and react with the nitrogen atmosphere to form a nitride ceramic. The seed is effectively molded in-situ with the ceramic, so that the ceramic and holder forms a closely conforming holder for the seed, suitable for single crystal AlN growth.
摘要翻译： 提供了一种用于制造用于单晶氮化铝生长的氮化铝（AlN）种子的安装件的装置和方法。 具有近端基部和从其延伸的壁部分的保持器由晶体生长坩埚材料制成，并且限定内部空腔。 将AlN种子放置在保持器内，并且在氮气气氛中放置在能够通过氮化形成氮化物陶瓷的合适材料的熔点或超过其熔点的温度，例如铝。 将由该材料制成的颗粒滴入保持器和种子上，使其熔融并与氮气气氛反应形成氮化物陶瓷。 种子与陶瓷有效地原位成型，使得陶瓷和保持器形成适合于单晶AlN生长的种子的紧密配合的保持器。
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公开(公告)号：US11939700B2
公开(公告)日：2024-03-26
申请号：US17496867
申请日：2021-10-08
申请人： Robert T. Bondokov , James R. Grandusky , Jianfeng Chen , Shichao Wang , Toru Kimura , Thomas Miebach , Keisuke Yamaoka , Leo J. Schowalter
发明人： Robert T. Bondokov , James R. Grandusky , Jianfeng Chen , Shichao Wang , Toru Kimura , Thomas Miebach , Keisuke Yamaoka , Leo J. Schowalter
IPC分类号： C30B29/40 , C30B23/06 , C30B33/02 , H01L33/32 , C01B21/072
CPC分类号： C30B29/403 , C30B23/066 , C30B33/02 , H01L33/32 , C01B21/072 , C01P2006/60
摘要： In various embodiments, single-crystal aluminum nitride boules and substrates are formed from the vapor phase with controlled levels of impurities such as carbon. Single-crystal aluminum nitride may be heat treated via quasi-isothermal annealing and controlled cooling to improve its ultraviolet absorption coefficient and/or Urbach energy.
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公开(公告)号：US11515455B2
公开(公告)日：2022-11-29
申请号：US17083580
申请日：2020-10-29
申请人： Ken Kitamura , Masato Toita , Hironori Ishii , Yuting Wang , Leo J. Schowalter , Jianfeng Chen , James R. Grandusky
发明人： Ken Kitamura , Masato Toita , Hironori Ishii , Yuting Wang , Leo J. Schowalter , Jianfeng Chen , James R. Grandusky
摘要： In various embodiments, a layer of organic encapsulant is provided over a surface of an ultraviolet (UV) light-emitting semiconductor die, and at least a portion of the encapsulant is exposed to UV light to convert at least some of said portion of the encapsulant into non-stoichiometric silica material. The non-stoichiometric silica material includes silicon, oxygen, and carbon, and a carbon content of the non-stoichiometric silica material is greater than 1 ppm and less than 40 atomic percent.
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公开(公告)号：US10954608B2
公开(公告)日：2021-03-23
申请号：US16185830
申请日：2018-11-09
申请人： Robert T. Bondokov , Jianfeng Chen , Keisuke Yamaoka , Shichao Wang , Shailaja P. Rao , Takashi Suzuki , Leo J. Schowalter
发明人： Robert T. Bondokov , Jianfeng Chen , Keisuke Yamaoka , Shichao Wang , Shailaja P. Rao , Takashi Suzuki , Leo J. Schowalter
摘要： In various embodiments, single-crystal aluminum nitride boules and substrates having high transparency to ultraviolet light and low defect density are formed. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers.
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公开(公告)号：US10854797B2
公开(公告)日：2020-12-01
申请号：US16421716
申请日：2019-05-24
申请人： Ken Kitamura , Masato Toita , Hironori Ishii , Yuting Wang , Leo J. Schowalter , Jianfeng Chen , James R. Grandusky
发明人： Ken Kitamura , Masato Toita , Hironori Ishii , Yuting Wang , Leo J. Schowalter , Jianfeng Chen , James R. Grandusky
摘要： In various embodiments, a layer of organic encapsulant is provided over a surface of an ultraviolet (UV) light-emitting semiconductor die, and at least a portion of the encapsulant is exposed to UV light to convert at least some of said portion of the encapsulant into non-stoichiometric silica material. The non-stoichiometric silica material includes silicon, oxygen, and carbon, and a carbon content of the non-stoichiometric silica material is greater than 1 ppm and less than 40 atomic percent.
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公开(公告)号：US09620676B2
公开(公告)日：2017-04-11
申请号：US15046515
申请日：2016-02-18
IPC分类号： H01L33/00 , H01L33/06 , H01L33/12 , H01L33/32 , H01L33/40 , H01L33/46 , H01L33/14 , H01L33/22 , H01L33/04 , H01L33/38 , H01L33/42
CPC分类号： H01L33/0075 , H01L33/04 , H01L33/06 , H01L33/12 , H01L33/14 , H01L33/22 , H01L33/32 , H01L33/325 , H01L33/387 , H01L33/40 , H01L33/405 , H01L33/42 , H01L33/46 , H01L33/60 , H01L2933/0016 , H01L2933/0025 , H01L2933/0058
摘要： In various embodiments, light-emitting devices incorporate smooth contact layers and polarization doping (i.e., underlying layers substantially free of dopant impurities) and exhibit high photon extraction efficiencies.
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68.发明申请METHODS OF FORMING PLANAR CONTACTS TO PSEUDOMORPHIC ELECTRONIC AND OPTOELECTRONIC DEVICES 审中-公开形成与电子电子和光电器件平面接触的方法公开(公告)号：US20150280057A1
公开(公告)日：2015-10-01
申请号：US14208089
申请日：2014-03-13
CPC分类号： H01L33/0075 , H01L33/04 , H01L33/06 , H01L33/12 , H01L33/14 , H01L33/22 , H01L33/32 , H01L33/325 , H01L33/387 , H01L33/40 , H01L33/405 , H01L33/42 , H01L33/46 , H01L33/60 , H01L2933/0016 , H01L2933/0025 , H01L2933/0058
摘要： In various embodiments, smooth contact layers are formed on polarization-doped light-emitting devices to enable high photon extraction efficiencies.
摘要翻译： 在各种实施例中，在偏振掺杂的发光器件上形成平滑的接触层以实现高的光子提取效率。
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公开(公告)号：US20120104355A1
公开(公告)日：2012-05-03
申请号：US13298570
申请日：2011-11-17
IPC分类号： H01L33/06
CPC分类号： H01L21/0254 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0262 , H01L33/025 , H01L33/08 , H01L33/12 , H01L33/20 , H01L33/22 , H01L33/32
摘要： In various embodiments, a semiconductor device includes an aluminum nitride single-crystal substrate, a pseudomorphic strained layer disposed thereover that comprises at least one of AlN, GaN, InN, or an alloy thereof, and, disposed over the strained layer, a semiconductor layer that is lattice-mismatched to the substrate and substantially relaxed.
摘要翻译： 在各种实施例中，半导体器件包括氮化铝单晶衬底，设置在其上的假晶应变层，其包括AlN，GaN，InN或其合金中的至少一种，并且在应变层上设置半导体层 这与衬底晶格失配并基本上松弛。
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公开(公告)号：US07323414B2
公开(公告)日：2008-01-29
申请号：US11363816
申请日：2006-02-28
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/02024 , B24B37/0056 , B24B37/044 , B24B49/006 , H01L21/02052
摘要： According to one aspect of the invention, an improved process for preparing a surface of substrate is provided wherein the surface of the substrate is prepared for a chemical mechanical polishing (CMP) process, the CMP process is performed on the surface of the substrate, and the surface of the substrate is finished to clear the substrate surface of any active ingredients from the CMP process. Also, an improved substrate produced by the method is provided. According to one aspect of the invention, particular polishing materials and procedures may be used that allow for increased quality of AlN substrate surfaces.
摘要翻译： 根据本发明的一个方面，提供了一种用于制备衬底表面的改进方法，其中衬底的表面准备用于化学机械抛光（CMP）工艺，在衬底的表面上进行CMP工艺，以及 完成基材的表面以从CMP工艺中清除任何活性成分的基材表面。 此外，提供了通过该方法制备的改进的基板。 根据本发明的一个方面，可以使用允许增加AlN衬底表面质量的特定抛光材料和程序。
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